公开(公告)号：US07336454B2

公开(公告)日：2008-02-26

申请号：US11417195

申请日：2006-05-04

申请人： Hideaki Fukuzawa ,  Shin-ichi Nakamura ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki ,  Akio Hori ,  Susumu Hashimoto

发明人： Hideaki Fukuzawa ,  Shin-ichi Nakamura ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki ,  Akio Hori ,  Susumu Hashimoto

IPC分类号： G11B5/33

CPC分类号： G11B5/3932 ,  B82Y25/00 ,  H01F10/132 ,  H01F10/16 ,  H01F10/3281 ,  H01L43/08

摘要： A base film of a hard magnetic film containing Co as a structural element has a crystal metal base film such as a Cr film formed on the main surface of a substrate and a reactive base film (mixing layer) formed between the substrate and the crystal metal base film and having a reactive amorphous layer containing a structural element of the substrate and a structural element of the crystal metal base film. A hard magnetic film containing Co as a structural element is formed on the crystal metal base film. With the crystal metal base film such as the Cr film formed on an amorphous layer, a hard magnetic film with a bi-crystal structure can be obtained with high reproducibility. With the hard magnetic film, magnetic characteristics such as coercive force Hc, residual magnetization Mr, saturated magnetization Ms, and square ratio S can be improved without need to use a thick base film. The hard magnetic film containing Co as a structural element is applied to a bias magnetic field applying film of a magnetoresistance effect device and a record layer of a magnetic record medium.

摘要翻译： 含有Co作为结构元件的硬磁性膜的基膜具有形成在基板的主表面上的Cr膜等晶体金属基膜和在基板和结晶金属之间形成的反应性基膜（混合层） 并且具有包含基板的结构元件的反应性非晶层和晶体金属基膜的结构元件。 在晶体金属基膜上形成含有Co作为结构元素的硬磁性膜。 利用在非晶层上形成的Cr膜等晶体金属基膜，可以以高再现性获得具有双晶结构的硬磁性膜。 对于硬磁性膜，可以提高矫顽力Hc，剩余磁化强度Mr，饱和磁化强度Ms和平方比S等磁特性，而无需使用厚基膜。 含有Co作为结构元件的硬磁性膜被施加到磁阻效应装置的偏磁场施加膜和磁记录介质的记录层。

公开(公告)号：US20080013222A1

公开(公告)日：2008-01-17

申请号：US11773294

申请日：2007-07-03

申请人： Shiho OKUNO ,  Yuichi Ohsawa ,  Shigeru Haneda ,  Yuzo Kamiguchi ,  Tatsuya Kishi

发明人： Shiho OKUNO ,  Yuichi Ohsawa ,  Shigeru Haneda ,  Yuzo Kamiguchi ,  Tatsuya Kishi

IPC分类号： G11B5/39

CPC分类号： H01L43/08 ,  B32B7/02 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/39 ,  G11B5/3929 ,  G11B2005/3996 ,  G11C11/16 ,  H01L43/12 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T428/1114 ,  Y10T428/1143 ,  Y10T428/12465 ,  Y10T428/12931 ,  Y10T428/12986 ,  Y10T428/325

摘要： A method of manufacturing a magnetoresistance effect element includes forming an insulating layer on a first ferromagnetic layer, forming an aperture reaching the first ferromagnetic layer by thrusting a needle from the top surface of the insulating layer, and depositing a ferromagnetic material to form a second ferromagnetic layer overlying the insulating layer which buries the aperture. The aperture can have an opening width not larger than 20 nm. A current flowing between the first ferromagnetic layer and the needle can be monitored, and thrusting of the needle an be interrupted when the current reaches a predetermined value.

摘要翻译： 一种制造磁阻效应元件的方法包括：在第一铁磁层上形成绝缘层，通过从绝缘层的顶表面推出针而形成到达第一铁磁层的孔，以及沉积铁磁材料以形成第二铁磁体 覆盖掩埋孔的绝缘层的层。 孔径可以具有不大于20nm的开口宽度。 可以监测在第一铁磁层和针之间流动的电流，并且当电流达到预定值时针头的推压被中断。

公开(公告)号：US07265950B2

公开(公告)日：2007-09-04

申请号：US10935578

申请日：2004-09-08

申请人： Shiho Okuno ,  Yuichi Ohsawa ,  Shigeru Haneda ,  Yuzo Kamiguchi ,  Tatsuya Kishi

发明人： Shiho Okuno ,  Yuichi Ohsawa ,  Shigeru Haneda ,  Yuzo Kamiguchi ,  Tatsuya Kishi

IPC分类号： G11B5/39 ,  G11B5/127

CPC分类号： H01L43/08 ,  B32B7/02 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/39 ,  G11B5/3929 ,  G11B2005/3996 ,  G11C11/16 ,  H01L43/12 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T428/1114 ,  Y10T428/1143 ,  Y10T428/12465 ,  Y10T428/12931 ,  Y10T428/12986 ,  Y10T428/325

摘要： A magnetoresistance effect element includes a first ferromagnetic layer (1), insulating layer (3) overlying the first ferromagnetic layer, and second ferromagnetic layer (2) overlying the insulating layer. The insulating layer has formed a through hole (A) having an opening width not larger than 20 nm, and the first and second ferromagnetic layers are connected to each other via the through hole.

摘要翻译： 磁阻效应元件包括第一铁磁层（1），覆盖第一铁磁层的绝缘层（3）和覆盖绝缘层的第二铁磁层（2）。 绝缘层形成了具有不大于20nm的开口宽度的通孔（A），并且第一和第二铁磁层经由通孔相互连接。

公开(公告)号：US07248448B2

公开(公告)日：2007-07-24

申请号：US10937652

申请日：2004-09-10

申请人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Katsuhiko Koui ,  Shin-ichi Nakamura ,  Hitoshi Iwasaki ,  Kazuhiro Saito ,  Hiromi Fuke ,  Masatoshi Yoshikawa ,  Susumu Hashimoto ,  Masashi Sahashi

发明人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Katsuhiko Koui ,  Shin-ichi Nakamura ,  Hitoshi Iwasaki ,  Kazuhiro Saito ,  Hiromi Fuke ,  Masatoshi Yoshikawa ,  Susumu Hashimoto ,  Masashi Sahashi

IPC分类号： G11B5/39

CPC分类号： H01F10/30 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3932 ,  G11B5/66 ,  G11B2005/3996 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/325 ,  Y10S428/90 ,  Y10T428/1107 ,  Y10T428/1121 ,  Y10T428/1143 ,  Y10T428/115 ,  Y10T428/1171 ,  Y10T428/1193 ,  Y10T428/12326 ,  Y10T428/12465 ,  Y10T428/12986 ,  Y10T428/265

摘要： Disclosed are a high-sensitivity and high-reliability magnetoresistance effect device (MR device) in which bias point designing is easy, and also a magnetic head, a magnetic head assembly and a magnetic recording/reproducing system incorporating the MR device. In the MR device incorporating a spin valve film, the magnetization direction of the free layer is at a certain angle to the magnetization direction of a second ferromagnetic layer therein when the applied magnetic field is zero. In this, the pinned magnetic layer comprises a pair of ferromagnetic films as antiferromagnetically coupled to each other via a coupling film existing therebetween. The device is provided with a means of keeping the magnetization direction of either one of the pair of ferromagnetic films constituting the pinned magnetic layer, and with a nonmagnetic high-conductivity layer as disposed adjacent to a first ferromagnetic layer on the side opposite to the side on which the first ferromagnetic layer is contacted with a nonmagnetic spacer layer. With that constitution, the device has extremely high sensitivity, and the bias point in the device is well controlled.

摘要翻译： 公开了一种容易进行偏置设计的高灵敏度和高可靠性磁阻效应器件（MR器件），以及包含MR器件的磁头，磁头组件和磁记录/再现系统。 在包含自旋阀膜的MR装置中，当施加的磁场为零时，自由层的磁化方向与其中第二铁磁性层的磁化方向成一定角度。 在此，被钉扎的磁性层包括通过其间存在的耦合膜彼此反铁磁耦合的一对铁磁膜。 该装置设置有保持构成被钉扎磁性层的一对铁磁膜中的任一个的磁化方向以及与侧面相反侧的第一铁磁性层附近设置的非磁性高导电性层 第一铁磁层与非磁性间隔层接触。 利用该结构，该器件具有极高的灵敏度，并且器件中的偏置点被良好地控制。

公开(公告)号：US20070154740A1

公开(公告)日：2007-07-05

申请号：US11685490

申请日：2007-03-13

申请人： Hiromi Yuasa ,  Masatoshi Yoshikawa ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki ,  Masashi Sahashi

发明人： Hiromi Yuasa ,  Masatoshi Yoshikawa ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki ,  Masashi Sahashi

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/012 ,  G11B5/3903 ,  G11B5/3906 ,  G11C11/16 ,  H01F10/324 ,  H01F10/3268 ,  H01L43/10 ,  Y10T428/1107 ,  Y10T428/1121 ,  Y10T428/1129 ,  Y10T428/1143 ,  Y10T428/115 ,  Y10T428/1171 ,  Y10T428/1193 ,  Y10T428/12465 ,  Y10T428/12868 ,  Y10T428/12917 ,  Y10T428/12951 ,  Y10T428/265 ,  Y10T428/32

摘要： A magnetoresistive device includes a magnetization pinned layer, a magnetization free layer, a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer, and electrodes allowing a sense current to flow in a direction substantially perpendicular to the plane of the stack including the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer. At least one of the magnetization pinned layer and the magnetization free layer is substantially formed of a binary or ternary alloy represented by the formula FeaCobNic (where a+b+c=100 at %, and a≦75 at %, b≦75 at %, and c≦63 at %), or formed of an alloy having a body-centered cubic crystal structure.

摘要翻译： 磁阻装置包括磁化固定层，磁化自由层，形成在磁化固定层和磁化自由层之间的非磁性中间层，以及允许感测电流在基本垂直于堆叠平面的方向上流动的电极，包括 磁化钉扎层，非磁性中间层和无磁化层。 磁化固定层和无磁化层中的至少一个基本上由二元或三元合金形成，由二元或三元合金表示，其由式Fe / SUB>（其中a + b + c = 100at％，a≤75at％，b <= 75at％，c <= 63at％），或者由具有体心立方 晶体结构。

公开(公告)号：US07116527B1

公开(公告)日：2006-10-03

申请号：US08940020

申请日：1997-09-29

申请人： Hideaki Fukuzawa ,  Shin-ichi Nakamura ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki ,  Akio Hori ,  Susumu Hashimoto

发明人： Hideaki Fukuzawa ,  Shin-ichi Nakamura ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki ,  Akio Hori ,  Susumu Hashimoto

IPC分类号： G11B5/33

CPC分类号： G11B5/3932 ,  B82Y25/00 ,  H01F10/132 ,  H01F10/16 ,  H01F10/3281 ,  H01L43/08

摘要： A base film of a hard magnetic film containing Co as a structural element has a crystal metal base film such as a Cr film formed on the main surface of a substrate and a reactive base film (mixing layer) formed between the substrate and the crystal metal base film and having a reactive amorphous layer containing a structural element of the substrate and a structural element of the crystal metal base film. A hard magnetic film containing Co as a structural element is formed on the crystal metal base film. With the crystal metal base film such as the Cr film formed on an amorphous layer, a hard magnetic film with a bi-crystal structure can be obtained with high reproducibility. With the hard magnetic film, magnetic characteristics such as coercive force Hc, residual magnetization Mr, saturated magnetization Ms, and square ratio S can be improved without need to use a thick base film. The hard magnetic film containing Co as a structural element is applied to a bias magnetic field applying film of a magnetoresistance effect device and a record layer of a magnetic record medium.

摘要翻译： 含有Co作为结构元件的硬磁性膜的基膜具有形成在基板的主表面上的Cr膜等晶体金属基膜和在基板和结晶金属之间形成的反应性基膜（混合层） 并且具有包含基板的结构元件的反应性非晶层和晶体金属基膜的结构元件。 在晶体金属基膜上形成含有Co作为结构元素的硬磁性膜。 利用在非晶层上形成的Cr膜等晶体金属基膜，可以以高再现性获得具有双晶结构的硬磁性膜。 对于硬磁性膜，可以提高矫顽力Hc，剩余磁化强度Mr，饱和磁化强度Ms和平方比S等磁特性，而无需使用厚基膜。 含有Co作为结构元件的硬磁性膜被施加到磁阻效应装置的偏磁场施加膜和磁记录介质的记录层。

公开(公告)号：US07072152B2

公开(公告)日：2006-07-04

申请号：US11078439

申请日：2005-03-14

申请人： Hiromi Yuasa ,  Hiroaki Yoda ,  Yuzo Kamiguchi ,  Tomohiko Nagata

发明人： Hiromi Yuasa ,  Hiroaki Yoda ,  Yuzo Kamiguchi ,  Tomohiko Nagata

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/3912 ,  G11B5/3919 ,  G11B5/3922 ,  G11B5/3929 ,  G11B5/398 ,  H01F10/324 ,  H01L43/08

摘要： There is provided a magnetoresistance effect element capable of precisely defining the active region in a CPP type MR element and of effectively suppressing and eliminating the influence of a magnetic field due to current from an electrode, and a magnetic head and magnetic reproducing system using the same. The active region of the MR element is defined by the area of a portion through which a sense current flows. Moreover, the shape of the cross section of a pillar electrode or pillar non-magnetic material for defining the active region of the element is designed to extend along the flow of a magnetic flux so as to efficiently read only a signal from a track directly below the active region. When the magnetic field due to current from the pillar electrode can not be ignored, the magnetic flux from a recording medium asymmetrically enters yokes and the magnetization free layer of the MR element to some extent. In expectation of this, if the cross section of the pillar electrode is designed to be asymmetric so as to extend along the flow of the magnetic flux, the regenerative efficiency is improved.

摘要翻译： 提供了能够精确地限定CPP型MR元件中的有源区域并且有效地抑制和消除由于来自电极的电流引起的磁场的影响的磁阻效应元件，以及使用其的磁头和磁性再现系统 。 MR元件的有源区域由感测电流流过的部分的面积定义。 此外，用于限定元件的有源区域的柱状电极或柱状非磁性材料的横截面的形状被设计成沿着磁通量的流动延伸，以便有效地只从来自直接下方的轨道的信号 活跃区域。 当不能忽略由于来自柱电极的电流引起的磁场时，来自记录介质的磁通量在一定程度上不对称地进入MR元件的磁轭和磁化自由层。 期望的是，如果柱状电极的截面被设计为沿着磁通量的流动而不对称，则再生效率得到改善。

公开(公告)号：US07071522B2

公开(公告)日：2006-07-04

申请号：US10887080

申请日：2004-07-09

申请人： Hiromi Yuasa ,  Yuzo Kamiguchi ,  Masatoshi Yoshikawa ,  Katsuhiko Koui ,  Hitoshi Iwasaki ,  Tomohiko Nagata ,  Takeo Sakakubo ,  Masashi Sahashi

发明人： Hiromi Yuasa ,  Yuzo Kamiguchi ,  Masatoshi Yoshikawa ,  Katsuhiko Koui ,  Hitoshi Iwasaki ,  Tomohiko Nagata ,  Takeo Sakakubo ,  Masashi Sahashi

IPC分类号： H01L29/82 ,  H01L43/00

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/30 ,  H01F10/3227 ,  H01F10/3272 ,  H01F10/3295 ,  H01L43/08 ,  H01L43/10

摘要： In a spin valve type element, an interface insertion layer (32, 34) of a material exhibiting large spin-dependent interface scattering is inserted in a location of a magnetically pinned layer (16) or a magnetically free layer (20) closer to a nonmagnetic intermediate layer (18). A nonmagnetic back layer (36) may be additionally inserted as an interface not in contact with the nonmagnetic intermediate layer to increase the output by making use of spin-dependent interface scattering along the interface between the pinned layer and the nonmagnetic back layer or between the free layer and the nonmagnetic back layer.

公开(公告)号：US07016169B2

公开(公告)日：2006-03-21

申请号：US10968958

申请日：2004-10-21

申请人： Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Yuzo Kamiguchi ,  Hiromi Yuasa

发明人： Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Yuzo Kamiguchi ,  Hiromi Yuasa

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/1278 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3954 ,  G11B2005/0029 ,  G11B2005/3996

摘要： A magnetoresistive head has a magnetoresistive film including first and second magnetization free layers, an intermediate layer sandwiched between the first and second magnetization free layers, an underlayer and a protective layer, a first electrode, a second electrode, a pair of first antiferromagnetic films, and a pair of second antiferromagnetic films. The first electrode is connected with the underlayer and the second electrode is connected with the protective layer, the electrodes allowing a current to flow in a direction substantially perpendicular to the plane of the magnetoresistive film. The pair of first antiferromagnetic films imparts a magnetic bias to the first magnetization free layer in a predetermined direction, and the pair of second antiferromagnetic films imparts a magnetic bias to the second magnetization free layer in a predetermined direction.

摘要翻译： 磁阻头具有包括第一和第二磁化自由层的磁阻膜，夹在第一和第二磁化自由层之间的中间层，底层和保护层，第一电极，第二电极，一对第一反铁磁膜， 和一对第二反铁磁膜。 第一电极与底层连接，第二电极与保护层连接，电极允许电流在基本垂直于磁阻膜的平面的方向上流动。 一对第一反铁磁膜在预定方向上向第一磁化自由层施加磁偏压，并且该对第二反铁磁膜在预定方向上给予第二磁化自由层的磁偏置。

公开(公告)号：US07008702B2

公开(公告)日：2006-03-07

申请号：US09973235

申请日：2001-10-10

申请人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Katsuhiko Koui ,  Shin-ichi Nakamura ,  Hitoshi Iwasaki ,  Kazuhiro Saito ,  Hiromi Fuke ,  Masatoshi Yoshikawa ,  Susumu Hashimoto ,  Masashi Sahashi

发明人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Katsuhiko Koui ,  Shin-ichi Nakamura ,  Hitoshi Iwasaki ,  Kazuhiro Saito ,  Hiromi Fuke ,  Masatoshi Yoshikawa ,  Susumu Hashimoto ,  Masashi Sahashi

IPC分类号： G11B5/127

CPC分类号： H01F10/30 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3932 ,  G11B5/66 ,  G11B2005/3996 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/325 ,  Y10S428/90 ,  Y10T428/1107 ,  Y10T428/1121 ,  Y10T428/1143 ,  Y10T428/115 ,  Y10T428/1171 ,  Y10T428/1193 ,  Y10T428/12326 ,  Y10T428/12465 ,  Y10T428/12986 ,  Y10T428/265

摘要： A magnetoresistance effect element includes a nonmagnetic spacer layer, first and second ferromagnetic layer separated by the nonmagnetic spacer layer, and a nonmagnetic conductivity layer. The first ferromagnetic layer has a magnetization direction at an angle relative to a magnetization direction of the second ferromagnetic layer at zero applied magnetic field. The second ferromagnetic layer has first and second ferromagnetic films antiferromagnetically coupled to one another and an antiferromagnetically coupling film located between and in contact with the first and second ferromagnetic films. The magnetization of the first ferromagnetic layer freely rotates in a magnetic field signal. The nonmagnetic conductivity layer is disposed in contact with the first ferromagnetic layer so that the first ferromagnetic layer is disposed between the nonmagnetic high-conductivity layer and the nonmagnetic spacer layer. The first ferromagnetic layer has a film thickness between 0.5 nanometers and 4.5 nanometers.

摘要翻译： 磁阻效应元件包括非磁性间隔层，由非磁性间隔层隔开的第一和第二铁磁层和非磁性导电层。 第一铁磁层在零施加磁场下具有相对于第二铁磁层的磁化方向成一定角度的磁化方向。 第二铁磁层具有彼此反铁磁耦合的第一和第二铁磁膜和位于第一和第二铁磁膜之间并与其接触的反铁磁耦合膜。 第一铁磁层的磁化在磁场信号中自由旋转。 非磁性导电层设置成与第一铁磁层接触，使得第一铁磁层设置在非磁性高导电层和非磁性间隔层之间。 第一铁磁层的膜厚度在0.5纳米到4.5纳米之间。