知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

18 条记录 (耗时 0.018 秒)

    Magnetoresistance effect element
    3.
    发明授权
    Magnetoresistance effect element 失效
    磁阻效应元件

    公开(公告)号：US5500633A

    公开(公告)日：1996-03-19

    申请号：US323809

    申请日：1994-10-17

    申请人： Yoshiaki Saito ,  Koichiro Inomata ,  Shiho Okuno ,  Yoshinori Takahashi

    发明人： Yoshiaki Saito ,  Koichiro Inomata ,  Shiho Okuno ,  Yoshinori Takahashi

    IPC分类号： H01L43/10 ,  H01L43/00

    CPC分类号： H01L43/10

    摘要： A magnetoresistance effect element includes a multilayer stack of alternating magnetic and nonmagnetic layers, and having a mixture layer constituted by a mixture of a ferromagnetic element and a non-ferromagnetic element interposed between adjacent stacked magnetic and non-magnetic layers so as to exhibit a magnetoresistance effect. The multilayered stack includes at least two magnetic layers, at least two mixture layers, and at least one non-magnetic layer. 2(X.sub.1 /X.sub.n)/n is larger than 1.1 where n is the number of atomic layers of the mixture layer, X.sub.1 is an atomic concentration (%) of the ferromagnetic element of an atomic layer closest to the magnetic layer, and X.sub.n is an atomic concentration (%) of the ferromagnetic element of the n-th atomic layer closest to the non-magnetic layer.

    摘要翻译： 磁阻效应元件包括交替的磁性和非磁性层的多层堆叠，并且具有由介于相邻的堆叠的磁性和非磁性层之间的铁磁性元件和非铁磁性元件的混合物构成的混合层，以便表现出磁阻 影响。 多层堆叠包括至少两个磁性层，至少两个混合层和至少一个非磁性层。 2（X1 / Xn）/ n大于1.1，其中n是混合层的原子层数，X1是最靠近磁层的原子层的铁磁元素的原子浓度（％），Xn是 最接近非磁性层的第n个原子层的铁磁性元素的原子浓度（％）。