公开(公告)号：US20130316543A1

公开(公告)日：2013-11-28

申请号：US13480831

申请日：2012-05-25

Applicant: DAVID J. ALTKNECHT ,  ROBERT E. ERICKSON ,  STUART STEPHEN PAPWORTH PARKIN ,  CHRISTOPHER O. LADA ,  MAHESH G. SAMANT

Inventor： DAVID J. ALTKNECHT ,  ROBERT E. ERICKSON ,  STUART STEPHEN PAPWORTH PARKIN ,  CHRISTOPHER O. LADA ,  MAHESH G. SAMANT

IPC: H01L21/02

CPC classification number: C23C14/042 ,  H01L21/02636

Abstract: A shadow masking device for use in the semiconductor industry includes self-aligning mechanical components that permit shadow masks to be exchanged while maintaining precise alignment with the target substrate. The misregistration between any two of the various layers in the formed structure can be kept to less than 40 microns.

Abstract translation: 用于半导体工业的阴影掩蔽装置包括自对准机械部件，其允许在保持与目标基板的精确对准的同时更换荫罩。 形成的结构中的各层之间的任何两个之间的对准可以保持在小于40微米。

公开(公告)号：US08227896B2

公开(公告)日：2012-07-24

申请号：US12636588

申请日：2009-12-11

Applicant: Xin Jiang ,  Stuart Stephen Papworth Parkin ,  Mahesh Govind Samant ,  Cheng-Han Yang

Inventor： Xin Jiang ,  Stuart Stephen Papworth Parkin ,  Mahesh Govind Samant ,  Cheng-Han Yang

IPC: H01L29/00

CPC classification number: G11C11/5685 ,  C23C14/081 ,  C23C14/35 ,  G11C11/5671 ,  G11C13/0007 ,  G11C13/003 ,  G11C13/0069 ,  G11C17/16 ,  G11C17/165 ,  G11C2013/0073 ,  G11C2013/009 ,  G11C2213/76 ,  G11C2213/79 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/165

Abstract: Nitrogen-doped MgO insulating layers exhibit voltage controlled resistance states, e.g., a high resistance and a low resistance state. Patterned nano-devices on the 100 nm scale show highly reproducible switching characteristics. The voltage levels at which such devices are switched between the two resistance levels can be systematically lowered by increasing the nitrogen concentration. Similarly, the resistance of the high resistance state can be varied by varying the nitrogen concentration, and decreases by orders of magnitude by varying the nitrogen concentrations by a few percent. On the other hand, the resistance of the low resistance state is nearly insensitive to the nitrogen doping level. The resistance of single Mg50O50-xNx layer devices can be varied over a wide range by limiting the current that can be passed during the SET process. Associated data storage devices can be constructed.

Abstract translation: 氮掺杂的MgO绝缘层表现出电压控制的电阻状态，例如高电阻和低电阻状态。 100 nm刻度的图案化纳米器件显示出高度可重现的开关特性。 通过增加氮浓度可以使这些装置在两个电阻水平之间切换的电压水平被系统地降低。 类似地，可以通过改变氮浓度来改变高电阻状态的电阻，并且通过将氮浓度改变几个百分比来降低数量级。 另一方面，低电阻状态的电阻对氮掺杂水平几乎不敏感。 单个Mg50O50-xNx层器件的电阻可以通过限制在SET过程中可以通过的电流在宽范围内变化。 可以构建相关的数据存储设备。

公开(公告)号：US20100330707A1

公开(公告)日：2010-12-30

申请号：US11627824

申请日：2007-01-26

Applicant: Xin Jiang ,  Stuart Stephen Papworth Parkin ,  Jonathan Sun

Inventor： Xin Jiang ,  Stuart Stephen Papworth Parkin ,  Jonathan Sun

IPC: H01L43/12 ,  C23F4/00

CPC classification number: H01L43/12

Abstract: A method for fabricating a device includes forming a first insulation layer to cover a removable mask and a device structure that has been defined by the mask. The device structure is below the mask. The mask is lifted off to expose a top portion of the device structure. A conductive island structure is formed over the first insulation layer and the exposed top portion of the device structure. The first insulation layer and the conductive island structure are covered with a second insulation layer. A contact is formed through the second insulation layer to the conductive island structure.

Abstract translation: 一种用于制造器件的方法包括形成第一绝缘层以覆盖可去除的掩模和由掩模限定的器件结构。 器件结构在掩模之下。 提起面罩以露出装置结构的顶部。 在第一绝缘层和器件结构的暴露顶部上形成导电岛结构。 第一绝缘层和导电岛结构被第二绝缘层覆盖。 通过第二绝缘层向导电岛结构形成接触。

公开(公告)号：US07551469B1

公开(公告)日：2009-06-23

申请号：US12348779

申请日：2009-01-05

Applicant: Stuart Stephen Papworth Parkin

Inventor： Stuart Stephen Papworth Parkin

IPC: G11C19/00

CPC classification number: G11C19/0841 ,  G11C11/14 ,  G11C19/0808 ,  Y10S977/933

Abstract: A racetrack memory storage device moves domain walls along the racetrack in one direction only. The reading element can be positioned at one end of the racetrack (rather than in the middle of the racetrack). The domain walls are annihilated upon moving them across the reading element but their corresponding information is read into one or more memory devices (e.g., built-in CMOS circuits). The information can then be processed in circuits for computational needs and written back into the racetrack either in its original form (as it was read out of the racetrack) or in a different form after some computation, using a writing element positioned at the end of the racetrack opposite to the reading element. Such a racetrack can be built more simply and has greater reliability of operation than previous racetrack memory devices.

Abstract translation: 赛道记忆体存储装置仅沿一个方向沿着跑道移动畴壁。 阅读元素可以位于跑道的一端（而不是在赛道的中间）。 移动它们横跨读取元件时，域壁被消灭，但它们的相应信息被读入一个或多个存储器件（例如，内置的CMOS电路）。 然后可以在电路中处理信息以用于计算需要，并以其原始形式（如从赛道中读出）或以一种不同的形式将其写回到赛道中，在一些计算之后，使用位于 赛马场与阅读元素相对。 这样的赛道可以更简单地构建，并且具有比以前的赛道记忆装置更高的操作可靠性。

公开(公告)号：US07531830B2

公开(公告)日：2009-05-12

申请号：US11739051

申请日：2007-04-23

Applicant: Christian Kaiser ,  Stuart Stephen Papworth Parkin

Inventor： Christian Kaiser ,  Stuart Stephen Papworth Parkin

IPC: H01L29/06 ,  H01L29/08 ,  H01L39/00

CPC classification number: H01L43/10 ,  H01L43/08

Abstract: A tunnel barrier in proximity with a layer of a rare earth element-transition metal (RE-TM) alloy forms a device that passes negatively spin-polarized current. The rare earth element includes at least one element selected from the group consisting of Gd, Tb, Dy, Ho, Er, Tm, and Yb. The RE and TM have respective sub-network moments such that the absolute magnitude of the RE sub-network moment is greater than the absolute magnitude of the TM sub-network moment. An additional layer of magnetic material may be used in combination with the tunnel barrier and the RE-TM alloy layer to form a magnetic tunnel junction. Still other layers of tunnel barrier and magnetic material may be used in combination with the foregoing to form a flux-closed double tunnel junction device.

Abstract translation: 靠近稀土元素 - 过渡金属（RE-TM）合金层的隧道势垒形成通过负自旋极化电流的装置。 稀土元素包括选自Gd，Tb，Dy，Ho，Er，Tm和Yb中的至少一种元素。 RE和TM具有相应的子网络时刻，使得RE子网络时刻的绝对幅度大于TM子网络时刻的绝对幅度。 可以与隧道势垒和RE-TM合金层结合使用附加的磁性材料层以形成磁性隧道结。 隧道势垒和磁性材料的其它层可以与前述结合使用以形成通量封闭双隧道结装置。

公开(公告)号：US20090046493A1

公开(公告)日：2009-02-19

申请号：US11838663

申请日：2007-08-14

Applicant: SOLOMON ASSEFA ,  Michael C. Gaidis ,  Eric A. Joseph ,  Stuart Stephen Papworth Parkin ,  Christy S. Tyberg

Inventor： SOLOMON ASSEFA ,  Michael C. Gaidis ,  Eric A. Joseph ,  Stuart Stephen Papworth Parkin ,  Christy S. Tyberg

IPC: G11C19/08 ,  H01L21/00

CPC classification number: H01L27/222 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C19/0808 ,  H01L21/76816 ,  H01L43/08

Abstract: In one embodiment, the invention is a method and apparatus for fabricating sub-lithography data tracks for use in magnetic shift register memory devices. One embodiment of a memory device includes a first stack of dielectric material formed of a first dielectric material, a second stack of dielectric material surrounding the first stack of dielectric material and formed of at least a second dielectric material, and at least one data track for storing information, positioned between the first stack of dielectric material and the second stack of dielectric material, the data track having a high aspect ratio and a substantially rectangular cross section.

Abstract translation: 在一个实施例中，本发明是用于制造用于磁移位寄存器存储器件的子光刻数据磁道的方法和装置。 存储器件的一个实施例包括由第一电介质材料形成的介电材料的第一叠层，围绕第一电介质材料堆叠并由至少第二电介质材料形成的第二电介质材料叠层，以及至少一个用于 存储位于所述第一电介质材料堆叠和所述第二电介质材料堆之间的信息，所述数据轨道具有高纵横比和基本上矩形的横截面。

公开(公告)号：US07443639B2

公开(公告)日：2008-10-28

申请号：US11099184

申请日：2005-04-04

Applicant: Stuart Stephen Papworth Parkin

Inventor： Stuart Stephen Papworth Parkin

IPC: G11B5/39

CPC classification number: G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/06 ,  G11B5/3903 ,  G11C11/16 ,  H01L43/08

Abstract: Magnetic tunnel junctions are disclosed that include ferromagnetic (or ferrimagnetic) materials and a bilayer tunnel barrier structure. The bilayer includes a crystalline material, such as MgO or Mg—ZnO, and Al2O3, which may be amorphous. If MgO is used, then it is preferably (100) oriented. The magnetic tunnel junctions so formed enjoy high tunneling magnetoresistance, e.g., greater than 100% at room temperature.

Abstract translation: 公开了包括铁磁（或亚铁磁）材料和双层隧道势垒结构的磁隧道结。 双层包括可以是无定形的结晶材料，例如MgO或Mg-ZnO，以及Al 2 O 3 O 3。 如果使用MgO，则优选（100）取向。 如此形成的磁隧道结在室温下享有高隧道磁阻，例如大于100％。

公开(公告)号：US20080182015A1

公开(公告)日：2008-07-31

申请号：US11928602

申请日：2007-10-30

Applicant: Stuart Stephen Papworth Parkin

Inventor： Stuart Stephen Papworth Parkin

IPC: B05D5/12

CPC classification number: H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3909 ,  H01L43/12 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/115 ,  Y10T428/1193

Abstract: Magnetic tunnel junctions are constructed from a MgO or Mg—ZnO tunnel barrier and amorphous magnetic layers in proximity with, and on respective sides of, the tunnel barrier. The amorphous magnetic layer preferably includes Co and at least one additional element selected to make the layer amorphous, such as boron. Magnetic tunnel junctions formed from the amorphous magnetic layers and the tunnel barrier have tunneling magnetoresistance values of up to 200% or more.

Abstract translation: 磁隧道结由MgO或Mg-ZnO隧道势垒和隧道势垒附近和相应侧面的非晶磁性层构成。 非晶磁性层优选包括Co和至少一种选择以使层非晶化的附加元素，例如硼。 由非晶磁性层和隧道势垒形成的磁隧道结的隧道磁阻值高达200％以上。

公开(公告)号：US20080145952A1

公开(公告)日：2008-06-19

申请号：US11835037

申请日：2007-08-07

Applicant: Stuart Stephen Papworth Parkin

Inventor： Stuart Stephen Papworth Parkin

IPC: H01L21/02

CPC classification number: H01L29/66984 ,  Y10S977/933

Abstract: A MgO tunnel barrier is sandwiched between semiconductor material on one side and a ferri- and/or ferromagnetic material on the other side to form a spintronic element. The semiconductor material may include GaAs, for example. The spintronic element may be used as a spin injection device by injecting charge carriers from the magnetic material into the MgO tunnel barrier and then into the semiconductor. Similarly, the spintronic element may be used as a detector or analyzer of spin-polarized charge carriers by flowing charge carriers from the surface of the semiconducting layer through the MgO tunnel barrier and into the (ferri- or ferro-) magnetic material, which then acts as a detector. The MgO tunnel barrier is preferably formed by forming a Mg layer on an underlayer (e.g., a ferromagnetic layer), and then directing additional Mg, in the presence of oxygen, towards the underlayer.

Abstract translation: MgO隧道势垒夹在一侧的半导体材料和另一侧的铁和/或铁磁材料之间以形成自旋电子元件。 半导体材料可以包括例如GaAs。 自旋电子元件可以通过将电荷载体从磁性材料注入到MgO隧道势垒中，然后进入半导体中而用作自旋注入装置。 类似地，自旋电子元件可以用作自旋极化电荷载流子的检测器或分析器，这是通过将载流子从半导体层的表面流过MgO隧道屏障并进入（铁或铁）磁性材料 作为检测器。 MgO隧道势垒优选通过在底层（例如铁磁性层）上形成Mg层，然后在氧的存在下将另外的Mg引向底层来形成。

公开(公告)号：US07357995B2

公开(公告)日：2008-04-15

申请号：US10884696

申请日：2004-07-02

Applicant: Stuart Stephen Papworth Parkin

Inventor： Stuart Stephen Papworth Parkin

IPC: G11B5/39 ,  G11B5/127

CPC classification number: G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295 ,  H01L43/08 ,  Y10T428/1107 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/115 ,  Y10T428/1193

Abstract: Magnetic tunneling devices are formed from a first body centered cubic (bcc) magnetic layer and a second bcc magnetic layer. At least one spacer layer of bcc material between these magnetic layers exchange couples the first and second bcc magnetic layers. A tunnel barrier in proximity with the second magnetic layer permits spin-polarized current to pass between the tunnel barrier and the second layer; the tunnel barrier may be either MgO and Mg—ZnO. The first magnetic layer, the spacer layer, the second magnetic layer, and the tunnel barrier are all preferably (100) oriented. The MgO and Mg—ZnO tunnel barriers are prepared by first depositing a metallic layer on the second magnetic layer (e.g., a Mg layer), thereby substantially reducing the oxygen content in this magnetic layer, which improves the performance of the tunnel barriers.

Abstract translation: 磁隧道器件由第一体心立方（bcc）磁性层和第二bcc磁性层形成。 这些磁性层之间的至少一个bcc材料间隔层交换耦合第一和第二bcc磁性层。 靠近第二磁性层的隧道势垒允许自旋极化电流在隧道势垒和第二层之间通过; 隧道势垒可以是MgO和Mg-ZnO。 第一磁性层，间隔层，第二磁性层和隧道势垒都优选为（100）取向。 通过首先在第二磁性层（例如，Mg层）上沉积金属层来制备MgO和Mg-ZnO隧道势垒，从而大大降低该磁性层中的氧含量，这改善了隧道势垒的性能。