Abstract:
An electron beam apparatus prevents a rapid increase of dosage caused by stoppage or deceleration of movement and protects the specimen when the specimen is irradiated with the electron beam while the specimen and the electron beam are being relatively moved. An electron beam source outputs the electron beam. The dosage of electron beam irradiated per unit area of the specimen is measured. A storage section stores a predetermined dosage per unit area in memory for the specimen. A detector detects over exposure of the electron beam when the measured dosage per unit area is greater than the dosage per unit area stored in the storage section. A controller controls the electron beam source to reduce the dosage per unit area of the electron beam lower than the dosage per unit area stored in the storage section.
Abstract:
A common deflection signal is provided, simultaneously, to individual yokes in an electron beam (e-beam) deflection apparatus of an electron beam projection lithography system. A single digital-to-analog converter (DAC) generates the common deflection signal. The common deflection signal is provided to individual programmable attenuators to adjust the signal for each individual yoke. The adjusted individual signal is amplified and passed to one of the individual yokes. The yokes are controlled to provide a curvilinear variable axis lens (CVAL) deflection that is adjusted to attenuate most of the noise from the common deflection signal that would have been present in a typical CVAL e-beam system.
Abstract:
To improve the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and a deflector. A glitch waveform generated during a step change in the output of a D/A converter at the preceding stage of the amplifier is anticipated and is cancelled out with a correction waveform. After the output of the D/A converter has settled, this output is sample-held and the step change is interpolated with a smoothing circuit. The deflection area is increased by positioning an electrostatic deflector offset around the optical axis relative to another electrostatic deflector, and the response speed of the main deflection is improved by adding auxiliary deflection coils of one or two turns. The alignment time is reduced by combining the coordinate conversion in the wafer area and in the chip area. In order to correct the astigmatism of the electromagnetic lens, two stages of coils are provided and an electric current corresponding to the quantity of deflection is supplied to the coils.
Abstract:
A charged particle beam exposure system emits and deflects an electron beam (11a) toward a continuously moving exposure object (18) and draws semiconductor integrated circuit patterns on the object. The system comprises a charged particle beam generating unit (11), first and second deflectors (12 and 13) for deflecting the electron beam (11a), first and second deflector drivers (14 and 15) for controlling outputs of the first and second deflectors (12 and 13), a stage driving and controlling unit (16) for controlling the movement of the object (18), and a controller (17) for controlling the inputs and outputs of the respective components. The second deflector driver (15) comprises at least a data correction unit (15A) for receiving main deflector data (MD1) and stage position data (STD) and providing corrected main deflector data (MD2), a deflection signal output unit (15B) for providing a main deflector set signal (S1) according to the main deflector data (MD2), a first wait time generator (15C) for generating a first pulse signal (PS1) according to the main deflector data (MD2), a second wait time generator (15D) for generating a second pulse signal (PS2) in synchronism with the first pulse signal (PS1), and a comparator (15E) for comparing the first and second pulse signals (PS1 and PS2) with each other and providing a drawing start signal (S3).
Abstract:
An apparatus includes a first charged particle beam manipulator positioned in a first layer configured to influence a charged particle beam and a second charged particle beam manipulator positioned in a second layer configured to influence the charged particle beam. The first and second charged particle beam manipulators may each include a plurality of electrodes having a first set of opposing electrodes and a second set of opposing electrodes. A first driver system electrically connected to the first set may be configured to provide a plurality of discrete output states to the first set. A second driver system electrically connected to the second set may be configured to provide a plurality of discrete output states to the second set. The first and second charged-particle beam manipulators may each comprise a plurality of segments; and a controller having circuitry configured to individually control operation of each of the plurality of segments.
Abstract:
A multicolumn charged particle beam exposure apparatus includes a plurality of column cells which generate charged particle beams, and the column cell includes a yoke which is made of a magnetic material and generates a magnetic field of a predetermined intensity distribution around an optical axis of the column, and a coil which is wound around the yoke. The coil includes a plurality of divided windings, which are driven by different power sources.
Abstract:
A charged particle beam writing apparatus includes plural conversion processing units to perform data conversion processing in parallel for writing data of each processing region obtained by virtually dividing the writing region of a target object into plural processing regions, a transmission unit to input a part of processing data of one of the plural processing regions for which data conversion processing has been performed, one part at a time, totally as n divided processing data, and sequentially transmit the n divided processing data such that the (n−1) th divided processing data is transmitted while the n-th divided processing data is being input, a deflection control circuit to control a deflection amount for deflecting a charged particle beam, based on one of the n divided processing data transmitted sequentially, and a writing unit to write a pattern by deflecting the charged particle beam based on the deflection amount.
Abstract:
A charged particle beam treatment apparatus includes: an accelerator configured to emit a charged particle beam by accelerating charged particles; an irradiation portion configured to irradiate an irradiation object with the charged particle beam through a scanning method; a transport line configured to transport the charged particle beam emitted from the accelerator to the irradiation portion; an energy adjusting portion configured to adjust energy of the charged particle beam; an electromagnet which is provided in the irradiation portion or the transport line; an electromagnet power source which is connected to the electromagnet; and a control portion. Semiconductors are connected between the electromagnet power source and the electromagnet in series. When switching a layer of the irradiation object to be irradiated with the charged particle beam, the control portion reduces the energy of the charged particle beam by controlling the energy adjusting portion and increases a resistance of the semiconductors.
Abstract:
An improved method of directing a charged particle beam that compensates for the time required for the charged particles to traverse the system by altering one or more of the deflector signals. According to one embodiment of the invention, a digital filter is applied to the scan pattern prior to digital-to-analog (D/A) conversion in order to reduce or eliminate over-shoot effects that can result from TOF errors. In other embodiments, analog filters or the use of signal amplifiers with a lower bandwidth can also be used to compensate for TOF errors. By altering the scan pattern, over-shoot effects can be significantly reduced or eliminated.
Abstract:
The invention relates to a charged particle multi-beamlet lithography system for exposing a target using a plurality of beamlets. The system has a beam generator, a beamlet blanker, and a beamlet projector. The beam generator is configured to generate a plurality of charged particle beamlets. The beamlet blanker is configured to pattern the beamlets. The beamlet projector is configured to project the patterned beamlets onto the target surface. The system further has a deflection device. The deflection device has a plurality of memory cells. Each memory cell is provided with a storage element and is connected to a switching electrode of a deflector.