Electron beam apparatus, and inspection instrument and inspection process thereof
    31.
    发明申请
    Electron beam apparatus, and inspection instrument and inspection process thereof 有权
    电子束装置及检验仪器及其检查过程

    公开(公告)号:US20030085355A1

    公开(公告)日:2003-05-08

    申请号:US10329409

    申请日:2002-12-27

    Inventor: Yoshiaki Kohama

    Abstract: An electron beam apparatus prevents a rapid increase of dosage caused by stoppage or deceleration of movement and protects the specimen when the specimen is irradiated with the electron beam while the specimen and the electron beam are being relatively moved. An electron beam source outputs the electron beam. The dosage of electron beam irradiated per unit area of the specimen is measured. A storage section stores a predetermined dosage per unit area in memory for the specimen. A detector detects over exposure of the electron beam when the measured dosage per unit area is greater than the dosage per unit area stored in the storage section. A controller controls the electron beam source to reduce the dosage per unit area of the electron beam lower than the dosage per unit area stored in the storage section.

    Abstract translation: 电子束装置防止运动停止或减速引起的剂量快速增加,并且当样本和电子束相对移动时,在用电子束照射样本时保护样本。 电子束源输出电子束。 测量每单位面积照射的电子束的剂量。 存储部分将每单位面积的预定剂量存储在样品的存储器中。 当每单位面积的测量剂量大于存储部分中存储的每单位面积的剂量时,检测器检测电子束的过度曝光。 控制器控制电子束源以减少电子束单位面积的剂量低于存储部分中存储的每单位面积的剂量。

    Deflection noise reduction in charged particle beam lithography
    32.
    发明授权
    Deflection noise reduction in charged particle beam lithography 失效
    带电粒子束光刻中的偏转噪声降低

    公开(公告)号:US06521903B1

    公开(公告)日:2003-02-18

    申请号:US09348481

    申请日:1999-07-07

    CPC classification number: H01J37/1474 H01J2237/1504 H01J2237/3175

    Abstract: A common deflection signal is provided, simultaneously, to individual yokes in an electron beam (e-beam) deflection apparatus of an electron beam projection lithography system. A single digital-to-analog converter (DAC) generates the common deflection signal. The common deflection signal is provided to individual programmable attenuators to adjust the signal for each individual yoke. The adjusted individual signal is amplified and passed to one of the individual yokes. The yokes are controlled to provide a curvilinear variable axis lens (CVAL) deflection that is adjusted to attenuate most of the noise from the common deflection signal that would have been present in a typical CVAL e-beam system.

    Abstract translation: 公共偏转信号同时被提供给电子束投影光刻系统的电子束(e-beam)偏转装置中的各个轭。 单个数模转换器(DAC)产生公共偏转信号。 公共偏转信号被提供给单独的可编程衰减器以调整每个单独磁轭的信号。 经调整的单独信号被放大并传递到单独的轭中的一个。 磁轭被控制以提供曲线可变轴透镜(CVAL)偏转,其被调节以衰减来自常见的偏转信号的大部分噪声,这将会存在于典型的CVAL电子束系统中。

    Charged particle beam exposure apparatus control system and a method of
operation for providing a drawing start signal
    34.
    发明授权
    Charged particle beam exposure apparatus control system and a method of operation for providing a drawing start signal 失效
    带电粒子束曝光装置控制系统和提供绘图开始信号的操作方法

    公开(公告)号:US5225684A

    公开(公告)日:1993-07-06

    申请号:US948475

    申请日:1992-09-22

    Abstract: A charged particle beam exposure system emits and deflects an electron beam (11a) toward a continuously moving exposure object (18) and draws semiconductor integrated circuit patterns on the object. The system comprises a charged particle beam generating unit (11), first and second deflectors (12 and 13) for deflecting the electron beam (11a), first and second deflector drivers (14 and 15) for controlling outputs of the first and second deflectors (12 and 13), a stage driving and controlling unit (16) for controlling the movement of the object (18), and a controller (17) for controlling the inputs and outputs of the respective components. The second deflector driver (15) comprises at least a data correction unit (15A) for receiving main deflector data (MD1) and stage position data (STD) and providing corrected main deflector data (MD2), a deflection signal output unit (15B) for providing a main deflector set signal (S1) according to the main deflector data (MD2), a first wait time generator (15C) for generating a first pulse signal (PS1) according to the main deflector data (MD2), a second wait time generator (15D) for generating a second pulse signal (PS2) in synchronism with the first pulse signal (PS1), and a comparator (15E) for comparing the first and second pulse signals (PS1 and PS2) with each other and providing a drawing start signal (S3).

    Abstract translation: 带电粒子束曝光系统朝向连续移动的曝光物体(18)发射并偏转电子束(11a),并将半导体集成电路图案拉到物体上。 该系统包括带电粒子束产生单元(11),用于偏转电子束(11a)的第一和第二偏转器(12和13),第一和第二偏转器驱动器(14和15),用于控制第一和第二偏转器 (12和13),用于控制物体(18)的移动的平台驱动和控制单元(16),以及用于控制各个部件的输入和输出的控制器(17)。 第二偏转器驱动器(15)至少包括用于接收主偏转器数据(MD1)和平台位置数据(STD)并提供校正的主偏转器数据(MD2)的数据校正单元(15A),偏转信号输出单元(15B) 用于根据主偏转器数据(MD2)提供主偏转器设定信号(S1),用于根据主偏转器数据(MD2)产生第一脉冲信号(PS1)的第一等待时间发生器(15C),第二等待 用于与第一脉冲信号(PS1)同步地产生第二脉冲信号(PS2)的时间发生器(15D)和用于将第一和第二脉冲信号(PS1和PS2)彼此比较的比较器(15E) 绘图开始信号(S3)。

    AN APPARATUS USING ENHANCED DEFLECTORS TO MANIPULATE CHARGED PARTICLE BEAMS

    公开(公告)号:US20230178328A1

    公开(公告)日:2023-06-08

    申请号:US17913141

    申请日:2021-03-18

    CPC classification number: H01J37/1474 H01J2237/1504

    Abstract: An apparatus includes a first charged particle beam manipulator positioned in a first layer configured to influence a charged particle beam and a second charged particle beam manipulator positioned in a second layer configured to influence the charged particle beam. The first and second charged particle beam manipulators may each include a plurality of electrodes having a first set of opposing electrodes and a second set of opposing electrodes. A first driver system electrically connected to the first set may be configured to provide a plurality of discrete output states to the first set. A second driver system electrically connected to the second set may be configured to provide a plurality of discrete output states to the second set. The first and second charged-particle beam manipulators may each comprise a plurality of segments; and a controller having circuitry configured to individually control operation of each of the plurality of segments.

    Charged particle beam writing apparatus and charged particle beam writing method
    37.
    发明授权
    Charged particle beam writing apparatus and charged particle beam writing method 有权
    带电粒子束写入装置和带电粒子束写入方法

    公开(公告)号:US09478391B2

    公开(公告)日:2016-10-25

    申请号:US14620402

    申请日:2015-02-12

    Abstract: A charged particle beam writing apparatus includes plural conversion processing units to perform data conversion processing in parallel for writing data of each processing region obtained by virtually dividing the writing region of a target object into plural processing regions, a transmission unit to input a part of processing data of one of the plural processing regions for which data conversion processing has been performed, one part at a time, totally as n divided processing data, and sequentially transmit the n divided processing data such that the (n−1) th divided processing data is transmitted while the n-th divided processing data is being input, a deflection control circuit to control a deflection amount for deflecting a charged particle beam, based on one of the n divided processing data transmitted sequentially, and a writing unit to write a pattern by deflecting the charged particle beam based on the deflection amount.

    Abstract translation: 带电粒子束写入装置包括多个转换处理单元,用于并行地执行数据转换处理,以将通过将目标对象的写入区域虚拟地分割成多个处理区域而获得的每个处理区域的数据进行写入;传输单元,用于输入处理的一部分 已经执行数据转换处理的多个处理区域之一的数据一次一个地完全分配为n个分割处理数据,并且顺序地发送n个分割的处理数据,使得第(n-1)个划分的处理数据 在输入第n个分割处理数据的同时发送偏转控制电路,根据顺序发送的n个分割处理数据之一来控制用于偏转带电粒子束的偏转量的偏转控制电路和写入图案的写入单元 通过基于偏转量偏转带电粒子束。

    CHARGED PARTICLE BEAM TREATMENT APPARATUS AND METHOD OF ADJUSTING PATH LENGTH OF CHARGED PARTICLE BEAM
    38.
    发明申请
    CHARGED PARTICLE BEAM TREATMENT APPARATUS AND METHOD OF ADJUSTING PATH LENGTH OF CHARGED PARTICLE BEAM 有权
    充电颗粒光束处理装置和调整充电颗粒光束路径长度的方法

    公开(公告)号:US20150270098A1

    公开(公告)日:2015-09-24

    申请号:US14658309

    申请日:2015-03-16

    Inventor: Shinji IWANAGA

    Abstract: A charged particle beam treatment apparatus includes: an accelerator configured to emit a charged particle beam by accelerating charged particles; an irradiation portion configured to irradiate an irradiation object with the charged particle beam through a scanning method; a transport line configured to transport the charged particle beam emitted from the accelerator to the irradiation portion; an energy adjusting portion configured to adjust energy of the charged particle beam; an electromagnet which is provided in the irradiation portion or the transport line; an electromagnet power source which is connected to the electromagnet; and a control portion. Semiconductors are connected between the electromagnet power source and the electromagnet in series. When switching a layer of the irradiation object to be irradiated with the charged particle beam, the control portion reduces the energy of the charged particle beam by controlling the energy adjusting portion and increases a resistance of the semiconductors.

    Abstract translation: 带电粒子束处理装置包括:加速器,被配置为通过加速带电粒子来发射带电粒子束; 照射部,被配置为通过扫描方法对带电粒子束照射被照射物体; 输送线,被配置为将从所述加速器发射的带电粒子束传送到所述照射部; 能量调节部,被配置为调整带电粒子束的能量; 设置在照射部或输送线上的电磁体; 连接到电磁体的电磁体电源; 和控制部。 半导体串联连接在电磁铁和电磁铁之间。 当通过控制能量调节部分切换要照射的照射物体的层时,控制部分减小带电粒子束的能量并增加半导体的电阻。

    Pattern modification schemes for improved FIB patterning
    39.
    发明授权
    Pattern modification schemes for improved FIB patterning 有权
    用于改进FIB图案化的图案修改方案

    公开(公告)号:US08624206B2

    公开(公告)日:2014-01-07

    申请号:US13655129

    申请日:2012-10-18

    Applicant: FEI Company

    Abstract: An improved method of directing a charged particle beam that compensates for the time required for the charged particles to traverse the system by altering one or more of the deflector signals. According to one embodiment of the invention, a digital filter is applied to the scan pattern prior to digital-to-analog (D/A) conversion in order to reduce or eliminate over-shoot effects that can result from TOF errors. In other embodiments, analog filters or the use of signal amplifiers with a lower bandwidth can also be used to compensate for TOF errors. By altering the scan pattern, over-shoot effects can be significantly reduced or eliminated.

    Abstract translation: 引导带电粒子束的改进方法,其补偿带电粒子通过改变一个或多个偏转器信号而穿过系统所需要的时间。 根据本发明的一个实施例,在数模(D / A)转换之前,将数字滤波器应用于扫描图案,以便减少或消除可能由TOF误差引起的过拍影响。 在其他实施例中,也可以使用模拟滤波器或具有较低带宽的信号放大器的使用来补偿TOF误差。 通过改变扫描图案,可以显着减少或消除超拍效果。

    Beamlet blanker arrangement
    40.
    发明授权
    Beamlet blanker arrangement 有权
    Beamlet消除器布置

    公开(公告)号:US08258484B2

    公开(公告)日:2012-09-04

    申请号:US12905131

    申请日:2010-10-15

    Abstract: The invention relates to a charged particle multi-beamlet lithography system for exposing a target using a plurality of beamlets. The system has a beam generator, a beamlet blanker, and a beamlet projector. The beam generator is configured to generate a plurality of charged particle beamlets. The beamlet blanker is configured to pattern the beamlets. The beamlet projector is configured to project the patterned beamlets onto the target surface. The system further has a deflection device. The deflection device has a plurality of memory cells. Each memory cell is provided with a storage element and is connected to a switching electrode of a deflector.

    Abstract translation: 本发明涉及一种用于使用多个子束曝光靶的带电粒子多子束光刻系统。 该系统具有光束发生器,子束遮挡器和小射束投影仪。 束发生器被配置为产生多个带电粒子子束。 子束消除器被配置为对子束进行图案化。 子束投影仪被配置为将图案化的子束投影到目标表面上。 该系统还具有偏转装置。 偏转装置具有多个存储单元。 每个存储单元设置有存储元件,并连接到偏转器的开关电极。

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