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    Electron flood apparatus for neutralizing charge build up on a substrate during ion implantation
    31.
    发明授权
    Electron flood apparatus for neutralizing charge build up on a substrate during ion implantation 有权
    用于在离子注入期间在衬底上中和电荷的电子泛滥装置

    公开(公告)号：US06501081B1

    公开(公告)日：2002-12-31

    申请号：US09462173

    申请日：2000-05-08

    Applicant: Majeed Foad ,  Yashuhiko Matsunaga

    Inventor： Majeed Foad ,  Yashuhiko Matsunaga

    IPC: H01J3702

    CPC classification number: H01J37/026 ,  H01J37/3171 ,  H01J2237/0041

    Abstract: An electron flood apparatus for neutralizing positive charge build up on a substrate during ion implantation comprises a tube through which the ion beam passes to the substrate. Inert gas is supplied to the plasma chamber and a cathode in the plasma chamber is heated to emit electrons. An accelerating electrical supply is connected between a cathode and an accelerating electrode in the plasma chamber to accelerate electrons emitted by the cathode to produce a plasma in the chamber. A separate cathode bias electrical supply is connected directly between the cathode and the substrate common terminal to set a desired bias potential on the cathode relative to the substrate independently of the acceleration potential.

    Abstract translation: 在离子注入期间用于中和在基板上积累的正电荷的电子泛滥装置包括离子束通过其穿过衬底的管。 将惰性气体供应到等离子体室，并且等离子体室中的阴极被加热以发射电子。 加速电源连接在等离子体室中的阴极和加速电极之间，以加速由阴极发射的电子，以在腔室中产生等离子体。 单独的阴极偏置电源直接连接在阴极和衬底公共端之间，以独立于加速电位在阴极上相对于衬底设置期望的偏置电位。

    Ion implantation apparatus and method of implanting ions to prevent charge build up on a substrate
    32.
    发明授权
    Ion implantation apparatus and method of implanting ions to prevent charge build up on a substrate 有权
    离子注入装置和注入离子的方法以防止电荷在基片上积聚

    公开(公告)号：US06452197B1

    公开(公告)日：2002-09-17

    申请号：US09530801

    申请日：2000-08-18

    Applicant: Hiroyuki Ito

    Inventor： Hiroyuki Ito

    IPC: G21K510

    CPC classification number: H01J37/026 ,  H01J2237/0041 ,  H01J2237/31701

    Abstract: In ion implantation processes, secondary electrons are emitted from a substrate in an ion implanter during ion implantation and have the effect of producing excessive negative charge build up on the substrate damaging the substrate. An apparatus and a method is provided in which the negative charge build up on the substrate is restricted by extending a magnetic filter across the ion beam between a substrate holder and a plasma flood source of the ion implanter to deflect the secondary electrons with higher energies above about 15 eV out of the ion beam to be absorbed by a conductive element, preventing re-attachment of the high energy secondary electrons to the substrate and allowing lower energy electrons below about 15 eV, which are necessary for neutralising positive charge build up on the substrate caused by the ion beam, to diffuse across the magnetic filter without being deflected out of the ion beam.

    Abstract translation: 在离子注入过程中，在离子注入期间从离子注入机中的衬底发射二次电子，并且具有在损伤衬底的衬底上产生过量的负电荷的作用。 提供了一种装置和方法，其中通过在离子注入机的衬底保持器和等离子体洪泛源之间的离子束之间延伸磁性过滤器来限制在衬底上积聚的负电荷，以使高于上述能量的二次电子偏转 大约15eV的离子束被导电元件吸收，防止高能二次电子重新附着到衬底上，并允许低于约15eV的较低能量电子，这是中和正电荷所必需的 由离子束引起的衬底，扩散到磁过滤器上而不会偏离离子束。

    Apparatus and method for reducing space charge of ion beams and wafer charging
    34.
    发明授权
    Apparatus and method for reducing space charge of ion beams and wafer charging 失效
    用于减少离子束和晶圆充电的空间电荷的装置和方法

    公开(公告)号：US06313428B1

    公开(公告)日：2001-11-06

    申请号：US09416574

    申请日：1999-10-12

    Applicant: Jin-Liang Chen ,  Linuan Chen

    Inventor： Jin-Liang Chen ,  Linuan Chen

    IPC: B23K1000

    CPC classification number: H01J37/026 ,  H01J2237/0041 ,  H01J2237/31701

    Abstract: An apparatus for ion beam neutralization is disclosed in this invention. The apparatus is a plasma flood source with an arc discharge chamber enclosed in a source housing with sufficient cooling so that the housing temperature is near room temperature. Arc discharge between a filament and the arc chamber ionizes the bleeding gas atoms or molecules in the arc chamber and produces plasma. The low energy electrons together with ions in the plasma drift out of the arc chamber and neutralize the passing ion beam. The sufficiently cooled source housing prevents radiation to the processed wafers, reduces metal particle concentration in the plasma and therefore metal contamination on the wafers, and keeps beamline pressure low while more electrons are extracted from the flood source through the apertures with larger area.

    Abstract translation: 在本发明中公开了一种用于离子束中和的装置。 该装置是具有电弧放电室的等离子体洪水源，其包围在具有足够冷却的源壳体中，使得壳体温度接近室温。 灯丝与电弧室之间的电弧放电使电弧室中的渗出气体原子或分子电离，产生等离子体。 等离子体中的低能电子与离子一起漂移到电弧室外并中和通过的离子束。 充分冷却的源壳体防止辐射到经处理的晶片，减少了等离子体中的金属颗粒浓度，并因此降低了晶片上的金属污染，并且将束线压力保持在较低水平，同时通过具有较大面积的孔径从洪水源中提取更多的电子。

    Neutral particle beam irradiation apparatus
    35.
    发明授权
    Neutral particle beam irradiation apparatus 失效
    中性粒子束照射装置

    公开(公告)号：US5818040A

    公开(公告)日：1998-10-06

    申请号：US748994

    申请日：1996-11-14

    Applicant: Keizo Kinoshita ,  Seiji Samukawa

    Inventor： Keizo Kinoshita ,  Seiji Samukawa

    IPC: C23F4/00 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  H05H3/02 ,  H05H3/00

    CPC classification number: H05H3/02 ,  H01J2237/0041 ,  H01J2237/3151

    Abstract: The present invention provides a neutral particle beam treatment apparatus which includes the following elements. A plasma generator is provided for generating a plasma from a treatment gas by alternation of application and discontinuation of a high frequency field. A negative ion accelerator is also provided for fetching negative ions from the plasma generated by the plasma generator and acceleration thereof to cause a negative ion beam. A neutralizer is further provided for neutralizing the negative ion beam to cause a neutral particle beam. A holder is still further provided for holding a sample at a position at which the neutral particle beam is irradiated.

    Abstract translation: 本发明提供一种中性粒子束处理装置，其包括以下元件。 提供了一种等离子体发生器，用于通过应用的交替和高频场的停止从处理气体产生等离子体。 还提供负离子加速器用于从由等离子体发生器产生的等离子体中提取负离子并加速其产生负离子束。 进一步提供中和剂用于中和负离子束以引起中性粒子束。 另外还设置有用于将样品保持在照射中性粒子束的位置的保持器。

    Scan type electron microscope
    36.
    发明授权
    Scan type electron microscope 失效
    扫描型电子显微镜

    公开(公告)号：US5396067A

    公开(公告)日：1995-03-07

    申请号：US071268

    申请日：1993-06-04

    Applicant: Shohei Suzuki ,  Shintaro Kawata ,  Keitaro Hara

    Inventor： Shohei Suzuki ,  Shintaro Kawata ,  Keitaro Hara

    IPC: H01J37/28 ,  H01J37/252

    CPC classification number: H01J37/28 ,  H01J2237/0041 ,  H01J2237/2003

    Abstract: A scan type electron microscope has an electron beam generating source for generating an electron beam with which a sample is irradiated; a sample chamber, supplied with a gas for effecting a gas amplification, for housing the sample; a secondary electron detecting means, installed in the sample chamber, for detecting secondary electrons gas-amplified by the gas after being generated from the sample with the irradiation of the electron beam; and an electrode, disposed between the sample and the secondary electron detecting means, for absorbing positive ions produced when the secondary electrons are gasamplified by the gas. The electrode may be constituted by a further fine tube extended from a pressure limiting aperture to a position just above the sample and formed with a path of the electron beam. The absorption of the positive ions prevents a positive charge-up of the sample, whereby a voltage between the sample and the secondary electron detecting means can be kept at a fixed level. A scatter of the primary electron beam can also be remarkably reduced so as to eliminate scattered electrons which cause noise.

    Abstract translation: 扫描型电子显微镜具有用于产生照射样品的电子束的电子束发生源; 提供有用于进行气体放大的气体的样品室，用于容纳样品; 安装在样品室中的二次电子检测装置，用于检测通过电子束的照射从样品产生之后被气体气体放大的二次电子; 以及设置在样品和二次电子检测装置之间的电极，用于吸收当二次电子被气体气化扩大时产生的正离子。 电极可以由从压力限制孔延伸到恰好在样品上方的位置的另外的细管构成，并且形成有电子束的路径。 正离子的吸收防止样品的正电荷，由此可以将样品和二次电子检测装置之间的电压保持在固定水平。 也可以显着降低一次电子束的散射，以消除引起噪声的散射电子。

    Low energy, steered ion beam deposition system having high current at low pressure
    37.
    发明授权
    Low energy, steered ion beam deposition system having high current at low pressure 失效
    在低压下具有高电流的低能量，转向离子束沉积系统

    公开(公告)号：US5206516A

    公开(公告)日：1993-04-27

    申请号：US692589

    申请日：1991-04-29

    Applicant: John H. Keller ,  Dennis K. Coultas

    Inventor： John H. Keller ,  Dennis K. Coultas

    IPC: H01J37/141 ,  H01J37/05 ,  H01J37/317 ,  H01L21/265 ,  H01L21/268

    CPC classification number: H01J37/05 ,  H01J37/3178 ,  H01J2237/0041 ,  H01J2237/055

    Abstract: An ion beam deposition system in which ions of different masses and from different sources are independently steered into different parts of an analyzer magnet to be converged into a single wide beam which maintains a perpendicular relationship between the beam and the target. The beam is decelerated by a slit type deceleration lens to an energy suitable for deposition. The target is then scanned across the decelerated beam. The beam is maintained at high current and low pressure by confining electrons away from the magnet and/or adding energy to the low pressure atmosphere inside the analyzer magnet to produce a plasma of electrons and charged particles in order to provide adequate neutralizing of the space charge of the beam.

    Abstract translation: 一种离子束沉积系统，其中不同质量和不同源的离子被独立地转导到分析器磁体的不同部分中，以被聚集成单个宽光束，其维持光束和目标之间的垂直关系。 光束通过狭缝式减速透镜减速到适于沉积的能量。 然后将目标扫描在减速梁上。 通过将电子限制在远离磁体的位置和/或向分析器磁体内部的低压气氛中增加能量，将光束保持在高电流和低压，以产生电子和带电粒子的等离子体，以便提供足够的中和空间电荷 的梁。

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