知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

74 records (took 0.028 seconds)

    Quantum well intermixing
    33.
    发明授权
    Quantum well intermixing 失效

    公开(公告)号：US06617188B2

    公开(公告)日：2003-09-09

    申请号：US09802071

    申请日：2001-03-08

    Applicant: Boon Siew Ooi ,  Yee Loy Lam ,  Yuen Chuen Chan ,  Yan Zhou ,  Siu Chung Tam

    Inventor： Boon Siew Ooi ,  Yee Loy Lam ,  Yuen Chuen Chan ,  Yan Zhou ,  Siu Chung Tam

    IPC: H01L2100

    CPC classification number: B82Y20/00 ,  G02B2006/12128 ,  H01L21/182 ,  H01S5/026 ,  H01S5/2063 ,  H01S5/2068 ,  H01S5/3413 ,  H01S5/3414

    Abstract: The present invention provides a novel technique based on gray scale mask patterning (110), which requires only a single lithography and etching step (110, 120) to produce different thickness of SiO2 implantation mask (13) in selected regions followed by a one step IID (130) to achieve selective area intermixing. This novel, low cost, and simple technique can be applied for the fabrication of PICs in general, and WDM sources in particular. By applying a gray scale mask technique in IID in accordance with the present invention, the bandgap energy of a QW material can be tuned to different degrees across a wafer (14). This enables not only the integration of monolithic multiple-wavelength lasers but further extends to integrate with modulators and couplers on a single chip. This technique can also be applied to ease the fabrication and design process of superluminescent diodes (SLDs) by expanding the gain spectrum to a maximum after epitaxial growth.

    Integrated optical device
    34.
    发明申请
    Integrated optical device 失效
    集成光器件

    公开(公告)号：US20030141511A1

    公开(公告)日：2003-07-31

    申请号：US10203241

    申请日：2002-12-09

    Inventor： John Haig Marsh ,  Simon Eric Hicks ,  James Stewart Aitchison ,  Stewart Duncan McDougall ,  Bo Cang Qiu

    IPC: H01L029/06 ,  H01L031/0328

    CPC classification number: B82Y20/00 ,  G02B6/12004 ,  G02B6/42 ,  G02B2006/12119 ,  G02B2006/12121 ,  G02B2006/12123 ,  G02B2006/12128 ,  H01S5/026 ,  H01S5/1014 ,  H01S5/1064 ,  H01S5/3414

    Abstract: An improved integrated optical device (5a-5g) is disclosed containing first and second devices (10a-10g; 15a, 15e), optically coupled to each other and formed in first and second different material systems. One of the first or second devices (10a-10g, 15a, 15e) has a Quantum Well Intermixed (QWI) region (20a, 20g) at or adjacent a coupling region between the first and second devices (10a-10g; 15a, 15e). The first material system may be a Ill-V semiconductor based on Gallium Arsenide (GaAs) or Indium Phosphide (InP), while the second material may be Silica (SiO2), Silicon (Si), Lithium Niobate (LiNbO3), a polymer, or glass.

    Abstract translation: 公开了一种改进的集成光学器件（5a-5g），其包含彼此光学耦合并形成在第一和第二不同材料系统中的第一和第二器件（10a-10g; 15a，15e）。 第一或第二装置（10a-10g，15a，15e）中的一个在第一和第二装置（10a-10g; 15a，15e）之间或之间的耦合区域处具有量子阱混合（QWI）区域（20a，20g） ）。 第一材料系统可以是基于砷化镓（GaAs）或磷化铟（InP）的III-V半导体，而第二材料可以是二氧化硅（SiO 2），硅（Si），铌酸锂（LiNbO 3），聚合物， 或玻璃。

    Planar-type polarization independent optical isolator
    35.
    发明授权
    Planar-type polarization independent optical isolator 失效
    平面型偏振无关光隔离器

    公开(公告)号：US06535656B1

    公开(公告)日：2003-03-18

    申请号：US09982572

    申请日：2001-10-17

    Applicant: Hiroshi Noge ,  Hiroki Takahashi

    Inventor： Hiroshi Noge ,  Hiroki Takahashi

    IPC: G02B600

    CPC classification number: G02B6/2746 ,  G02B6/12002 ,  G02B6/125 ,  G02B6/126 ,  G02B6/136 ,  G02B2006/12128 ,  Y10S372/703

    Abstract: A planar-type optical isolator includes a substrate, a first mode splitter, a second mode splitter and a phase shift region formed on the substrate between the first mode splitter and the second mode splitter. The first mode splitter is formed on the substrate and receives an incident optical signal through an input port and splits the incident optical signal into a first incident mode and a second incident mode. The second optical splitter is formed on the substrate and combines a first rotated incident mode and a second rotated incident mode to reform the incident optical signal at an output port. The second mode splitter receives a reflected optical signal on the output port and splits the reflected optical signal into a first reflected mode and a second reflected mode. The phase shift region is formed on the substrate between the first mode splitter and the second mode splitter and includes a nonreciprocal phase shift section and reciprocal phase shift section.

    Abstract translation: 平面型光隔离器包括基板，第一模式分离器，第二模式分离器和形成在第一模式分离器和第二模式分离器之间的基板上的相移区域。 第一模式分离器形成在基板上，并通过输入端口接收入射光信号，并将入射光信号分解为第一入射模式和第二入射模式。 第二光分路器形成在基板上，并且组合第一旋转入射模式和第二旋转入射模式以在输出端口处改变入射光信号。 第二模式分离器在输出端口上接收反射光信号，并将反射光信号分解为第一反射模式和第二反射模式。 相移区域形成在第一模式分离器和第二模式分离器之间的基板上，并且包括非互易相移部分和往复相移部分。

    Monolithically integrated photonic circuit
    36.
    发明申请
    Monolithically integrated photonic circuit 失效
    单片集成光子电路

    公开(公告)号：US20020146191A1

    公开(公告)日：2002-10-10

    申请号：US10153490

    申请日：2002-05-20

    Inventor： Mark J. Bloemer ,  Krishna Myneni

    IPC: G02B006/12 ,  G02B006/10 ,  G02B006/26

    CPC classification number: G02B6/12004 ,  G02B2006/12123 ,  G02B2006/12128 ,  G02B2006/12142 ,  H01S5/026 ,  H01S5/0262 ,  H01S5/0265

    Abstract: In the monolithically integrated photonic circuit, light travels through multiple quantum well channel waveguides and is coupled into and out of the devices that reside in common on a single semiconductor substrate. Each device, which is co-planar with any other device on the substrate, is comprised of a quantum well channel waveguide of a pre-determined length and an electrical contact pad mounted on the waveguide that facilitates the application of electric field to the device. The function of any particular device as an optical source, an optical modulator or a photo-detector is determined by the bias mode of electric field applied to that particular device. The circuit is comprised of multiple rows of such devices. Each of these rows contains at least three devices which function as an optical source, an optical modulator and a photo-detector, respectively, and are separated from each other by electrical isolation gaps.

    Abstract translation: 在单片集成光子电路中，光通过多个量子阱沟道波导，并且耦合到共同驻留在单个半导体衬底上的器件中。 与衬底上的任何其它器件共平面的每个器件由预定长度的量子阱沟道波导和安装在波导上的电接触焊盘构成，其有助于将电场施加到器件。 作为光源，光调制器或光检测器的任何特定装置的功能由施加到该特定装置的电场的偏置模式确定。 该电路由多行此类设备组成。 这些行中的每一行分别包含用作光源的至少三个装置，光学调制器和光电检测器，并且通过电隔离间隙彼此分离。

    Nanometer-scale silicon-on-insulator photonic componets
    37.
    发明授权
    Nanometer-scale silicon-on-insulator photonic componets 失效
    纳米级绝缘子上的硅光子件

    公开(公告)号：US5838870A

    公开(公告)日：1998-11-17

    申请号：US808924

    申请日：1997-02-28

    Applicant: Richard A. Soref

    Inventor： Richard A. Soref

    IPC: G02B6/12 ,  G02B6/122 ,  G02B6/30 ,  G02F1/015 ,  H01S5/026 ,  G02B6/10

    CPC classification number: G02B6/12004 ,  G02B6/122 ,  G02B2006/12061 ,  G02B2006/12121 ,  G02B2006/12128 ,  G02B2006/12195 ,  G02B6/305 ,  G02B6/34 ,  G02F2001/0152 ,  H01S5/026

    Abstract: Nanometer scale silicon-on-insulator (SOI) guided-wave optical components in the near infra-red employ an SOI platform for optical isolation, and single mode silicon strip etched into the buried oxide. A multi-layer core for the strip consistes of several 1-3 nanometer crystal silicon multiple quantum wells confined by wide bandgap epitaxial barriers. The MQW region of the strip employs intersubband or band-to-band photonic effects. Active strip microcavities use a photonic bandgap resonator of etched air cylinders, or two sets of etched slot Bragg grating reflectors. Many thousands of these components can be integrated on a Si chip.

    Abstract translation: 近红外线的纳米尺度绝缘体上硅（SOI）导波光学元件采用SOI平台进行光学隔离，并将单模硅带蚀刻到埋入氧化物中。 用于条带的多层芯由多个由宽带隙外延栅限制的1-3个纳米晶体硅多量子阱组成。 带的MQW区域采用带间或带对光子效应。 有源带状微腔使用蚀刻气缸的光子带隙谐振器或两组蚀刻槽布拉格光栅反射器。 许多这些组件可以集成在Si芯片上。

    Semiconductor lasers and methods for fabricating semiconductor lasers
    38.
    发明授权
    Semiconductor lasers and methods for fabricating semiconductor lasers 失效
    半导体激光器和制造半导体激光器的方法

    公开(公告)号：US5539763A

    公开(公告)日：1996-07-23

    申请号：US302488

    申请日：1994-09-12

    Applicant: Masayoshi Takemi ,  Hirotaka Kizuki

    Inventor： Masayoshi Takemi ,  Hirotaka Kizuki

    IPC: H01S5/00 ,  B82Y20/00 ,  G02B6/12 ,  G02B6/124 ,  H01L27/15 ,  H01S5/026 ,  H01S5/06 ,  H01S3/18

    CPC classification number: G02B6/124 ,  H01L27/15 ,  H01L33/0062 ,  H01S5/0265 ,  G02B2006/12128

    Abstract: An integrated semiconductor laser and light modulator includes a semiconductor laser disposed at a first region on a semiconductor substrate, a light modulator of an electric field absorbing type disposed at a second region on the semiconductor substrate adjacent to the first region for outputting a modulated light by transmitting or absorbing the laser light generated in the semiconductor laser, a semiconductor laminated layer structure including a quantum well structure layer disposed in the first region and the second region on the semiconductor substrate, and a lattice mismatched layer having a lattice constant smaller than that of the semiconductor substrate, disposed on a part of the semiconductor laminated layer structure, in the second region. It is possible to enhance the transmission efficiency of the laser light to the light modulator and the quality of the active layer of the semiconductor laser and the light absorption layer of the light modulator. Thus, an integrated semiconductor laser and light modulator that has a high reliability and long lifetime is obtained.

    Abstract translation: 集成半导体激光器和光调制器包括设置在半导体衬底上的第一区域的半导体激光器，设置在与第一区域相邻的半导体衬底上的第二区域处的电场吸收型光调制器，用于通过 透射或吸收在半导体激光器中产生的激光，包括设置在半导体衬底的第一区域和第二区域中的量子阱结构层的半导体层叠层结构，以及晶格常数小于 设置在半导体叠层结构的一部分上的半导体衬底在第二区域中。 可以提高激光对光调制器的传输效率以及半导体激光器的有源层和光调制器的光吸收层的质量。 因此，获得了具有高可靠性和长寿命的集成半导体激光器和光调制器。

    Polarization-independent optical wavelength filter for channel dropping applications
    39.
    发明授权
    Polarization-independent optical wavelength filter for channel dropping applications 失效
    用于信道丢弃应用的偏振无关光波长滤波器

    公开(公告)号：US5515461A

    公开(公告)日：1996-05-07

    申请号：US262716

    申请日：1994-06-20

    Applicant: Robert J. Deri ,  Frank Patterson

    Inventor： Robert J. Deri ,  Frank Patterson

    IPC: G02B6/34 ,  G02B6/26

    CPC classification number: G02B6/12007 ,  G02B6/105 ,  G02B2006/12128 ,  G02B6/29332 ,  G02B6/29395

    Abstract: The polarization dependence of optical wavelength filters is eliminated by using waveguide directional couplers. Material birefringence is used to compensate for the waveguide (electromagnetic) birefringence which is the original cause of the polarization dependence. Material birefringence is introduced in a controllable fashion by replacing bulk waveguide layers by finely layered composites, such as multiple quantum wells using III-V semiconductor materials. The filter has use in wavelength-division-multiplexed fiber optic communication systems. This filter has broad application for wavelength-tunable receivers in fiber optic communication links, which may be used for telecommunications, optical computer interconnect links, or fiber optic sensor systems. Since multiple-wavelength systems are increasingly being used for all of these applications, the filter is useable whenever a rapidly tunable, wavelength-filtering receiver is required.

    Abstract translation: 通过使用波导定向耦合器消除了光学波长滤波器的偏振依赖性。 材料双折射用于补偿作为偏振相关性的原始原因的波导（电磁）双折射。 通过使用III-V半导体材料的诸如多个量子阱的细分层复合材料代替体波导层，以可控的方式引入材料双折射。 该滤波器用于波分复用光纤通信系统。 该滤波器对于光纤通信链路中的波长可调接收机具有广泛的应用，其可以用于电信，光学计算机互连链路或光纤传感器系统。 由于多波长系统越来越多地用于所有这些应用，所以每当需要快速可调谐的波长滤波接收器时，滤波器就可以使用。

Patent Agency Ranking