知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

96 条记录 (耗时 0.03 秒)

    Fast Release Granules
    36.
    发明申请
    Fast Release Granules 审中-公开
    快速释放颗粒

    公开(公告)号：US20090137441A1

    公开(公告)日：2009-05-28

    申请号：US12225015

    申请日：2007-02-16

    申请人： Andrew Paul Chapple ,  Stephen Thomas Keningley

    发明人： Andrew Paul Chapple ,  Stephen Thomas Keningley

    IPC分类号： C11D1/66 ,  C11D11/00 ,  C11D3/20

    CPC分类号： C11D1/72 ,  C11D1/40 ,  C11D1/42 ,  C11D1/525 ,  C11D1/662 ,  C11D1/667 ,  C11D1/75 ,  C11D3/0084 ,  C11D3/2034 ,  C11D3/2058 ,  C11D11/0082 ,  C11D17/06

    摘要： The present invention provides a granule that releases antioxidants rapidly and a method of preparing an antioxidant granule comprising the steps of: (i) melting a non-ionic surfactant the nonionic surfactant having a starting melting point of 40° C. or above as measured by differential scanning calorimetry; (ii) dissolving an antioxidant in the melted non-ionic surfactant with mixing to form a antioxidant/non-ionic solution; (iii) cooling the antioxidant/non-ionic solution to form a solid whilst forming a particulate matter.

    摘要翻译： 本发明提供了快速释放抗氧化剂的颗粒和一种制备抗氧化剂颗粒的方法，包括以下步骤：（i）将起始熔点为40℃或更高的非离子表面活性剂溶解在非离子表面活性剂中， 差示扫描量热法 （ii）将混合的抗氧化剂溶解在熔融的非离子表面活性剂中以形成抗氧化剂/非离子溶液; （iii）冷却抗氧化剂/非离子溶液以形成固体，同时形成颗粒物质。

    Solutions for cleaning silicon semiconductors or silicon oxides
    40.
    发明申请
    Solutions for cleaning silicon semiconductors or silicon oxides 审中-公开
    清洗硅半导体或硅氧化物的解决方案

    公开(公告)号：US20060073997A1

    公开(公告)日：2006-04-06

    申请号：US10955810

    申请日：2004-09-30

    申请人： Oana Leonte ,  Robert Chebi

    发明人： Oana Leonte ,  Robert Chebi

    IPC分类号： C23G1/00 ,  C11D7/32

    CPC分类号： C11D3/044 ,  C11D1/523 ,  C11D1/90 ,  C11D3/2058 ,  C11D3/2079 ,  C11D3/30 ,  C11D3/33 ,  C11D3/3947 ,  C11D7/06 ,  C11D7/261 ,  C11D7/265 ,  C11D7/3218 ,  C11D7/3245 ,  C11D11/0047 ,  H01L21/02052 ,  H01L21/0206

    摘要： A solution for cleaning silicon semiconductors or silicon oxides, and methods for cleaning silicon semiconductors or silicon oxides using the solution, is disclosed. The solution includes hydrogen peroxide, ammonium hydroxide, an alkanolamine, and at least one of a tetraalkylammonium hydroxide, an alkanolamide, an amido-betaine, an α,α-dihydroxyphenol, a carboxylic acid, a phosphonic acid, a chelating agent or a surfactant. The weight ratio of ammonium hydroxide to peroxide to water is between about 1:1:5 and 1:1-4:50, the weight ratio of ammonium hydroxide to water is between 1:5 and 1:50, and the molar ratio of component A to ammonium hydroxide is between 1:10 and 1:5000 is disclosed. The solution can achieve the efficiency equivalent to that of the conventional RCA two-step cleaning solution within a shorter time by one step preserving the silicon and silicon oxide substrate integrity and effectively remove contaminants such as organics, particles and metals from the surfaces of silicon semiconductors and silicon oxides without using strong acids such as HCl and sulfuric acid.

    摘要翻译： 公开了一种用于清洁硅半导体或硅氧化物的解决方案，以及使用该溶液来清洗硅半导体或氧化硅的方法。 溶液包括过氧化氢，氢氧化铵，链烷醇胺，以及四烷基氢氧化铵，链烷醇酰胺，酰氨基 - 甜菜碱，α，α-二羟基苯酚，羧酸，膦酸，螯合剂或表面活性剂中的至少一种 。 氢氧化铵与过氧化氢与水的重量比约为1:1:5:1:1-4:50，氢氧化铵与水的重量比为1:5至1:50，摩尔比 组分A与氢氧化铵的摩尔比为1:10至1:5000。 该解决方案可以在较短时间内实现与传统RCA两步清洗溶液相当的效率，通过一步保持硅和氧化硅底物的完整性，并有效地从硅半导体表面去除有机物，颗粒和金属等污染物 和氧化硅，而不使用强酸如HCl和硫酸。