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公开(公告)号:US08889609B2
公开(公告)日:2014-11-18
申请号:US13414339
申请日:2012-03-07
申请人: Aiping Wu , Yi-Chia Lee , Wen Dar Liu , Machukar Bhaskara Rao , Gautam Banerjee
发明人: Aiping Wu , Yi-Chia Lee , Wen Dar Liu , Machukar Bhaskara Rao , Gautam Banerjee
IPC分类号: C11D7/50 , C11D3/20 , C11D11/00 , C11D3/00 , C11D3/30 , C11D7/26 , C11D3/43 , C11D7/06 , C11D7/32 , C11D3/28 , C11D3/04
CPC分类号: C11D11/0047 , C11D3/0073 , C11D3/044 , C11D3/2034 , C11D3/2058 , C11D3/2086 , C11D3/28 , C11D3/30 , C11D3/43 , C11D7/06 , C11D7/261 , C11D7/265 , C11D7/3218 , C11D7/3281 , C11D7/5004 , C23G1/22
摘要: A water-rich hydroxylamine formulation for photoresist and post-etch/post-ash residue removal in applications wherein a semiconductor substrate comprises aluminum. The cleaning composition comprises from about 2 to about 15% by wt. of hydroxylamine; from about 50 to about 80% by wt. of water; from about 0.01 to about 5.0% by wt. of a corrosion inhibitor; from about 5 to about 45% by wt. of a component selected from the group consisting of: an alkanolamine having a pKa
摘要翻译: 在半导体衬底包括铝的应用中,用于光致抗蚀剂和后蚀刻/后灰渣残留物去除的富水羟胺制剂。 清洁组合物包含约2至约15重量% 的羟胺; 约50至约80重量%。 的水; 约0.01至约5.0重量%。 的腐蚀抑制剂; 约5至约45重量%。 选自:具有pKa <9.0的链烷醇胺,水混溶性溶剂及其混合物的组分。 这种组合物的使用对于Al基材显示出有效的清洁能力,最小的硅蚀刻,同时保护包含这两种材料的基材的铝。
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公开(公告)号:US20130061882A1
公开(公告)日:2013-03-14
申请号:US13414339
申请日:2012-03-07
申请人: Aiping Wu , Yi-Chia Lee , Wen Dar Liu , Machukar Bhaskara Rao , Gautam Banerjee
发明人: Aiping Wu , Yi-Chia Lee , Wen Dar Liu , Machukar Bhaskara Rao , Gautam Banerjee
CPC分类号: C11D11/0047 , C11D3/0073 , C11D3/044 , C11D3/2034 , C11D3/2058 , C11D3/2086 , C11D3/28 , C11D3/30 , C11D3/43 , C11D7/06 , C11D7/261 , C11D7/265 , C11D7/3218 , C11D7/3281 , C11D7/5004 , C23G1/22
摘要: A water-rich hydroxylamine formulation for photoresist and post-etch/post-ash residue removal in applications wherein a semiconductor substrate comprises aluminum. The cleaning composition comprises from about 2 to about 15% by wt. of hydroxylamine; from about 50 to about 80% by wt. of water; from about 0.01 to about 5.0% by wt. of a corrosion inhibitor; from about 5 to about 45% by wt. of a component selected from the group consisting of: an alkanolamine having a pKa
摘要翻译: 在半导体衬底包括铝的应用中,用于光致抗蚀剂和后蚀刻/后灰渣残留物去除的富水羟胺制剂。 清洁组合物包含约2至约15重量% 的羟胺; 约50至约80重量%。 的水; 约0.01至约5.0重量%。 的腐蚀抑制剂; 约5至约45重量%。 选自:具有pKa <9.0的链烷醇胺,水混溶性溶剂及其混合物的组分。 这种组合物的使用对于Al基材显示出有效的清洁能力,最小的硅蚀刻,同时保护包含这两种材料的基材的铝。
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