-
公开(公告)号：US20240014019A1
公开(公告)日：2024-01-11
申请号：US18472556
申请日：2023-09-22
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chia-Hsi WANG , Yen-Yu CHEN
CPC classification number: H01J37/3417 , C23C14/3407 , H01J37/3423 , C23C14/3414 , H01L21/0337
Abstract: A deposition apparatus includes a process chamber, a wafer support in the process chamber, a backplane structure having a first surface in the process chamber facing the wafer support, a target having a second surface facing the first surface and a third surface facing the wafer support, and an adhesion structure in physical contact with the backplane structure and the target. The adhesion structure has an adhesion material layer, and a spacer embedded in the adhesion material layer.
-
公开(公告)号：US20230386942A1
公开(公告)日：2023-11-30
申请号：US18361729
申请日：2023-07-28
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Wen-Hao CHENG , Yen-Yu CHEN , Yi-Ming DAI
IPC: H01L21/66 , C23C14/34 , C23C14/54 , G01N23/223 , H01J37/34 , H01L21/285 , H01L21/67
CPC classification number: H01L22/26 , C23C14/34 , C23C14/547 , G01N23/223 , H01J37/347 , H01L21/2855 , H01L21/67253 , G01N2223/076 , G01N2223/61 , G01N2223/633 , H01J2237/24585 , H01J2237/332
Abstract: A deposition system is provided capable of measuring at least one of the film characteristics (e.g., thickness, resistance, and composition) in the deposition system. The deposition system in accordance with the present disclosure includes a substrate process chamber. The deposition system in accordance with the present disclosure includes a substrate pedestal in the substrate process chamber, the substrate pedestal configured to support a substrate, and a target enclosing the substrate process chamber. A shutter disk including an in-situ measuring device is provided.
-
公开(公告)号：US20230383400A1
公开(公告)日：2023-11-30
申请号：US18447911
申请日：2023-08-10
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Wen-Hao CHENG , Hsuan-Chih CHU , Yen-Yu CHEN
CPC classification number: C23C14/564 , B08B7/028 , B08B5/02 , B08B7/04 , B08B9/00 , C23C14/34 , C23C14/50 , B08B13/00 , B08B2209/005
Abstract: A deposition system is provided capable of cleaning itself by removing a target material deposited on a surface of a collimator. The deposition system in accordance with the present disclosure includes a substrate process chamber. The deposition includes a substrate pedestal in the substrate process chamber, the substrate pedestal configured to support a substrate, a target enclosing the substrate process chamber, and a collimator having a plurality of hollow structures disposed between the target and the substrate, a vibration generating unit, and cleaning gas outlet.
-
公开(公告)号：US20230307218A1
公开(公告)日：2023-09-28
申请号：US18317009
申请日：2023-05-12
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Chia-Hsi WANG , Kun-Che HO , Yen-Yu CHEN
CPC classification number: H01J37/3455 , H01L21/02631 , C23C14/3407 , C23C14/3442 , H01J37/3461 , H01J37/3435 , H01J37/3414 , H01J37/3405 , H01J37/3452 , C23C14/351
Abstract: A method includes loading a wafer into a sputtering chamber, followed by depositing a film over the wafer by performing a sputtering process in the sputtering chamber. In the sputtering process, a target is bombarded by ions that are applied with a magnetic field using a magnetron. The magnetron includes a magnetic element over the target, an arm assembly connected to the magnetic element, a hinge mechanism connecting the arm assembly and a rotational shaft. The arm assembly includes a first prong and a second prong at opposite sides of the hinge mechanism. The magnetron further includes a controller that controls motion of the first arm assembly, enabling the first prong to revolve in an orbital motion path about the first hinge mechanism while the second prong remains stationary.
-
公开(公告)号：US20230275048A1
公开(公告)日：2023-08-31
申请号：US18312325
申请日：2023-05-04
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Wen-Hao CHENG , Yen-Yu CHEN , Chih-Wei LIN , Yi-Ming DAI
IPC: H01L23/00 , H01L23/31 , H01L21/56 , H01L21/768 , H01L23/522
CPC classification number: H01L24/03 , H01L24/08 , H01L23/3171 , H01L21/56 , H01L21/76888 , H01L21/76802 , H01L23/5226
Abstract: A method is provided. The method includes forming an interconnect structure electrically connected to a semiconductor device; forming a tantalum-based barrier layer over the interconnect structure; oxidizing the tantalum-based barrier layer to form a tantalum oxide over the tantalum-based barrier layer; and forming a metal layer over the tantalum oxide.
-
Patent Agency Ranking
公开(公告)号：US20230253309A1
公开(公告)日：2023-08-10
申请号：US18133970
申请日：2023-04-12
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chung-Liang CHENG , Shih Wei BIH , Yen-Yu CHEN
IPC: H01L23/522 , H01L21/768 , H01L21/311 , H01L21/3105
CPC classification number: H01L23/5226 , H01L21/3105 , H01L21/31105 , H01L21/76802 , H01L21/76831 , H01L21/02164 , H01L21/76843
Abstract: A semiconductor device includes: a first conductive structure having sidewalls and a bottom surface, the first conductive structure extending through one or more isolation layers formed on a substrate; and an insulation layer disposed between at least one of the sidewalls of the first conductive structure and respective sidewalls of the one or more isolation layers, wherein the first conductive structure is electrically coupled to a second conductive structure through at least the bottom surface.
-
公开(公告)号：US20230178415A1
公开(公告)日：2023-06-08
申请号：US18160957
申请日：2023-01-27
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Wen-Hao CHENG , Yen-Yu CHEN
IPC: H01L21/687 , B25J11/00 , B25J13/08 , H01L21/68 , H01L21/683
CPC classification number: H01L21/68707 , B25J11/0095 , B25J13/089 , H01L21/68 , H01L21/6833 , H01L21/6838
Abstract: A robot for transferring a wafer is disclosed. A blade of the robot includes a first sensor on an upper surface of the blade and the second sensor on a back surface of the blade. The first sensor is operable to align the blade with a wafer. The second sensor is operable to align the blade with a holder that holds the wafer.
-
公开(公告)号：US20230069264A1
公开(公告)日：2023-03-02
申请号：US17461742
申请日：2021-08-30
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chia-Hsi WANG , Yen-Yu CHEN
Abstract: A deposition apparatus includes a process chamber, a wafer support in the process chamber, a backplane structure having a first surface in the process chamber facing the wafer support, a target having a second surface facing the first surface and a third surface facing the wafer support, and an adhesion structure in physical contact with the backplane structure and the target. The adhesion structure has an adhesion material layer, and a spacer embedded in the adhesion material layer.
-
公开(公告)号：US20220367161A1
公开(公告)日：2022-11-17
申请号：US17876489
申请日：2022-07-28
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Chia-Hsi WANG , Kun-Che HO , Yen-Yu CHEN
Abstract: A an apparatus includes a processing chamber configured to house a workpiece, a target holder in the processing chamber, a first magnetic element positioned over a backside of the target holder, a first arm assembly connected to the first magnetic element, a rotational shaft, and a first hinge mechanism connecting the rotational shaft and the first arm assembly.
-
公开(公告)号：US20220356578A1
公开(公告)日：2022-11-10
申请号：US17872945
申请日：2022-07-25
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Wen-Hao CHENG , Yi-Ming DAI , Yen-Yu CHEN , Hsuan-Chih CHU
IPC: C23C16/455 , C23C16/458 , C23C16/52 , C23C16/44
Abstract: A thin film deposition system deposits a thin film on a substrate in a thin film deposition chamber. The thin film deposition system deposits the thin film by flowing a fluid into the thin film deposition chamber. The thin film deposition system includes a byproducts sensor that senses byproducts of the fluid in an exhaust fluid. The thin film deposition system adjusts the flow rate of the fluid based on the byproducts.
-
-
-
-
-
-
-
-
-
Search Results
79
records
(took 0.026 seconds)
