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    DEPOSITION SYSTEM AND METHOD
    1.
    发明申请
    DEPOSITION SYSTEM AND METHOD 有权

    公开(公告)号：US20250087536A1

    公开(公告)日：2025-03-13

    申请号：US18957378

    申请日：2024-11-22

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Wen-Hao CHENG ,  Hsuan-Chih CHU ,  Yen-Yu CHEN ,  Yi-Ming DAI

    IPC: H01L21/66 ,  C23C14/35 ,  C23C14/54 ,  H01J37/32 ,  H01J37/34

    Abstract: A deposition system provides a feature that may reduce costs of the sputtering process by increasing a target change interval. The deposition system provides an array of magnet members which generate a magnetic field and redirect the magnetic field based on target thickness measurement data. To adjust or redirect the magnetic field, at least one of the magnet members in the array tilts to focus on an area of the target where more target material remains than other areas. As a result, more ion, e.g., argon ion bombardment occurs on the area, creating more uniform erosion on the target surface.

    SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
    2.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME 有权

    公开(公告)号：US20210351143A1

    公开(公告)日：2021-11-11

    申请号：US17383215

    申请日：2021-07-22

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Wen-Hao CHENG ,  Yen-Yu CHEN ,  Chih-Wei LIN ,  Yi-Ming DAI

    IPC: H01L23/00 ,  H01L23/31 ,  H01L21/56 ,  H01L21/768 ,  H01L23/522

    Abstract: A device includes an interconnect structure, a barrier multi-layer structure, an oxide layer, a pad metal layer, and a passivation layer. The barrier multi-layer structure is over the interconnect structure, the barrier multi-layer structure includes a first metal nitride layer and a second metal nitride layer over the first metal nitride layer. The oxide layer is over the barrier multi-layer structure, in which the oxide layer is an oxide of the second metal nitride layer of the barrier multi-layer structure. The pad metal layer is over the oxide layer. The passivation layer is in contact with the barrier multi-layer structure, the oxide layer, and the pad metal layer.

    METHOD AND SYSTEM FOR DETECTING HOTSPOTS IN SEMICONDUCTOR WAFER
    3.
    发明申请
    METHOD AND SYSTEM FOR DETECTING HOTSPOTS IN SEMICONDUCTOR WAFER 审中-公开

    公开(公告)号：US20180165803A1

    公开(公告)日：2018-06-14

    申请号：US15378482

    申请日：2016-12-14

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Wen-Hao CHENG ,  Peng-Ren CHEN ,  Chih-Chiang TU

    IPC: G06T7/00

    CPC classification number: G06T7/0004 ,  G06T2207/30148

    Abstract: Methods and system for detecting hotspots in semiconductor wafer are provided. At least one semiconductor wafer is inspected to detect a plurality of hotspots of each die in the semiconductor wafer, wherein each of the hotspots has defect coordinates in a layout of the die. The hotspots of the dies are stacked in the layout according to the defect coordinates of the hotspots. A common pattern is obtained according to the stacked hotspots corresponding to a location with specific coordinates in the layout. It is determined whether the common pattern is a known pattern having an individual identification (ID) code. A new ID code is assigned to the common pattern when the common pattern is an unknown pattern.

    DEPOSITION SYSTEM AND METHOD
    6.
    发明申请
    DEPOSITION SYSTEM AND METHOD 有权

    公开(公告)号：US20220406583A1

    公开(公告)日：2022-12-22

    申请号：US17352133

    申请日：2021-06-18

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Wen-Hao CHENG ,  Hsuan-Chih CHU ,  Yen-Yu CHEN

    IPC: H01J37/34 ,  C23C14/54 ,  C23C14/34

    Abstract: A deposition system is provided capable of controlling an amount of a target material deposited on a substrate and/or direction of the target material that is deposited on the substrate. The deposition system in accordance with the present disclosure includes a substrate process chamber. The deposition includes a substrate pedestal in the substrate process chamber, the substrate pedestal configured to support a substrate, a target enclosing the substrate process chamber, and a collimator having a plurality of hollow structures disposed between the target and the substrate, wherein a length of at least one of the plurality of hollow structures is adjustable.

    METHOD AND SYSTEM OF MASK DATA PREPARATION FOR CURVILINEAR MASK PATTERNS FOR A DEVICE
    8.
    发明申请
    METHOD AND SYSTEM OF MASK DATA PREPARATION FOR CURVILINEAR MASK PATTERNS FOR A DEVICE 有权
    用于设备的CURVILINEAR掩模图案的掩模数据准备的方法和系统

    公开(公告)号：US20140189614A1

    公开(公告)日：2014-07-03

    申请号：US13732469

    申请日：2013-01-02

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Ru-Gun LIU ,  Wen-Hao CHENG ,  Chih-Chiang TU ,  Shuo-Yen CHOU

    IPC: G06F17/50

    CPC classification number: G03F1/70 ,  G03F1/36

    Abstract: A method comprises: (a) transforming a layout of a layer of an integrated circuit (IC) or micro electro-mechanical system (MEMS) to a curvilinear mask layout; (b) replacing at least one pattern of the curvilinear mask layout with a previously stored fracturing template having approximately the same shape as the pattern, to form a fractured IC or MEMS layout; and (c) storing, in a non-transitory storage medium, an e-beam generation file including a representation of the fractured IC or MEMS layout, to be used for fabricating a photomask.

    Abstract translation: 一种方法包括：（a）将集成电路（IC）或微机电系统（MEMS）的层的布局变换为曲线掩模布局; （b）用具有与图案大致相同形状的先前存储的压裂模板代替曲线掩模布局的至少一个图案，以形成断裂的IC或MEMS布局; 以及（c）在非暂时性存储介质中存储用于制造光掩模的电子束生成文件，其包括断裂的IC或MEMS布局的表示。

    DEPOSITION SYSTEM AND METHOD
    9.
    发明申请
    DEPOSITION SYSTEM AND METHOD 有权

    公开(公告)号：US20240387156A1

    公开(公告)日：2024-11-21

    申请号：US18789253

    申请日：2024-07-30

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Wen-Hao CHENG ,  Hsuan-Chih CHU ,  Yen-Yu CHEN

    IPC: H01J37/34 ,  C23C14/34 ,  C23C14/54

    Abstract: A deposition system is provided capable of controlling an amount of a target material deposited on a substrate and/or direction of the target material that is deposited on the substrate. The deposition system in accordance with the present disclosure includes a substrate process chamber. The deposition includes a substrate pedestal in the substrate process chamber, the substrate pedestal configured to support a substrate, a target enclosing the substrate process chamber, and a collimator having a plurality of hollow structures disposed between the target and the substrate, wherein a length of at least one of the plurality of hollow structures is adjustable.

    WORKPIECE PLATING AND RINSE APPARATUS AND METHOD
    10.
    发明公开
    WORKPIECE PLATING AND RINSE APPARATUS AND METHOD 审中-公开

    公开(公告)号：US20240271314A1

    公开(公告)日：2024-08-15

    申请号：US18167755

    申请日：2023-02-10

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Wen-Hao CHENG ,  Hsuan-Chih CHU ,  Yen-Yu CHEN ,  Zong-Kun LIN

    IPC: C25D21/08 ,  C25D17/02

    CPC classification number: C25D21/08 ,  C25D17/02

    Abstract: The present disclosure is directed to a fluid head that is configured to eject a first fluid (e.g., a liquid state fluid) and a second fluid (e.g., a gaseous state fluid). The fluid head is movable in a rotatable-fashion and a translatable-fashion such that the fluid head may be utilized to increase a speed and decrease a period of time for cleaning and drying a workpiece after an electro-chemical polishing (ECP) process or step. The fluid head may also be utilized to increase a speed and decrease a period of time for beveling an edge of a conductive layer on the workpiece. The present disclosure is also directed to methods for cleaning and drying the workpiece as well as beveling the conductive layer of the workpiece utilizing the fluid head.

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