公开(公告)号：US11728434B2

公开(公告)日：2023-08-15

申请号：US17011221

申请日：2020-09-03

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Seok Hoon Kim ,  Dong Myoung Kim ,  Dong Suk Shin ,  Seung Hun Lee ,  Cho Eun Lee ,  Hyun Jung Lee ,  Sung Uk Jang ,  Edward Nam Kyu Cho ,  Min-Hee Choi

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L21/8234 ,  H01L21/768 ,  H01L21/02 ,  H01L29/423 ,  H01L29/165 ,  H01L27/088 ,  H01L29/08 ,  H01L29/49 ,  H01L27/12

CPC分类号： H01L29/7855 ,  H01L21/02532 ,  H01L21/76871 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/4232 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/785 ,  H01L21/02645 ,  H01L27/1211 ,  H01L29/4966 ,  H01L29/66545

摘要： A semiconductor device includes a first fin type pattern on a substrate, a second fin type pattern, parallel to the first fin type pattern, on the substrate, and an epitaxial pattern on the first and second fin type patterns. The epitaxial pattern may include a shared semiconductor pattern on the first fin type pattern and the second fin type pattern. The shared semiconductor pattern may include a first sidewall adjacent to the first fin type pattern and a second sidewall adjacent to the second fin type pattern. The first sidewall may include a first lower facet, a first upper facet on the first lower facet and a first connecting curved surface connecting the first lower and upper facets. The second sidewall may include a second lower facet, a second upper facet on the second lower facet and a second connecting curved surface connecting the second lower and upper facets.

公开(公告)号：US20230249230A1

公开(公告)日：2023-08-10

申请号：US18299279

申请日：2023-04-12

申请人： Samsung Electronics Co., Ltd.

发明人： Seung Min SHIN ,  Hun Jae Jang ,  Seok Hoon Kim ,  Young-Hoo Kim ,  In Gi Kim ,  Tae-Hong Kim ,  Kun Tack Lee ,  Ji Hoon Cha ,  Yong Jun Choi

IPC分类号： B08B7/00 ,  B08B3/10 ,  H01L21/67 ,  H01L21/687 ,  H01L21/311

CPC分类号： B08B7/0042 ,  B08B3/10 ,  B08B7/0064 ,  H01L21/67051 ,  H01L21/67075 ,  H01L21/67248 ,  H01L21/68764 ,  H01L21/31111 ,  H01L21/67098

摘要： A wafer cleaning apparatus is provided. The wafer cleaning apparatus includes comprising a chamber configured to be loaded with a wafer, a nozzle on the wafer and configured to provide liquid chemicals on an upper surface of the wafer, a housing under the wafer, a laser module configured to irradiate laser on the wafer, a transparent window disposed between the wafer and the laser module, and a controller configured to control on/off of the laser module, wherein the controller is configured to control repetition of turning the laser module on and off, and retain temperature of the wafer within a temperature range, and a ratio of time when the laser module is on in one cycle including on/off of the laser module is 30% to 50%.

公开(公告)号：US20220190168A1

公开(公告)日：2022-06-16

申请号：US17519967

申请日：2021-11-05

申请人： Samsung Electronics Co., Ltd.

发明人： Jung Taek Kim ,  Seok Hoon Kim ,  Pan Kwi Park ,  Moon Seung Yang ,  Seo Jin Jeong ,  Min-Hee Choi ,  Ryong Ha

IPC分类号： H01L29/786 ,  H01L29/06 ,  H01L29/423

摘要： A semiconductor device includes a multi-channel active pattern, a plurality of gate structures on the multi-channel active pattern and spaced apart from each other in a first direction, the plurality of gate structures including a gate electrode that extends in a second direction different from the first direction, a source/drain recess between the adjacent gate structures, and a source/drain pattern on the multi-channel active pattern in the source/drain recess, wherein the source/drain pattern includes: a semiconductor liner layer including silicon-germanium and extending along the source/drain recess, a semiconductor filling layer including silicon-germanium on the semiconductor liner layer, and at least one or more semiconductor insertion layers between the semiconductor liner layer and the semiconductor filling layer, and wherein the at least one or more semiconductor insertion layers have a saddle structure.

公开(公告)号：US20220181500A1

公开(公告)日：2022-06-09

申请号：US17533719

申请日：2021-11-23

申请人： Samsung Electronics Co., Ltd.

发明人： Ryong Ha ,  Seok Hoon Kim ,  Jung Taek Kim ,  Pan Kwi Park ,  Moon Seung Yang ,  Seo Jin Jeong

IPC分类号： H01L29/786 ,  H01L29/66

摘要： A semiconductor device includes an active pattern which includes a lower pattern, and a sheet pattern that is spaced apart from the lower pattern in a first direction, a gate structure on the lower pattern that includes a gate electrode that surrounds the sheet pattern, the gate electrode extending in a second direction that is perpendicular to the first direction, and a source/drain pattern on the lower pattern and in contact with the sheet pattern. A contact surface between the sheet pattern and the source/drain pattern has a first width in the second direction, and the sheet pattern has a second width in the second direction that is greater than the first width.

公开(公告)号：US09582935B2

公开(公告)日：2017-02-28

申请号：US14321217

申请日：2014-07-01

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Seok Hoon Kim ,  Chang Hyo Yu

IPC分类号： G06T15/30 ,  G06T17/20 ,  G06T1/60

CPC分类号： G06T17/20 ,  G06T1/60

摘要： A tessellation method includes determining whether a previous tag the same as a current tag of a current patch is stored in a cache, and transmitting a previous tessellation pattern corresponding to the previous tag stored in the cache to a domain shader when a cache hit occurs. The method may further include, when a cache miss occurs, generating a current tessellation pattern corresponding to the current patch using a tessellator and transmitting the generated current tessellation pattern to the domain shader, and storing the generated current tessellation pattern in the cache.

摘要翻译： 细分方法包括确定与当前片段的当前标签相同的先前标签是否存储在高速缓存中，以及当发生高速缓存命中时将与存储在高速缓存中的先前标签相对应的先前细分图案发送到域着色器。 该方法可以进一步包括：当发生高速缓存未命中时，使用镶嵌器生成与当前贴片相对应的当前镶嵌图案，并将生成的当前镶嵌图案发送到域着色器，以及将生成的当前镶嵌图案存储在高速缓存中。