-
公开(公告)号：US20230253449A1
公开(公告)日：2023-08-10
申请号：US17935528
申请日：2022-09-26
发明人： Dong Suk Shin , Hyun-Kwan Yu , Seok Hoon Kim , Pan Kwi Park , Yong Seung Kim , Jung Taek Kim
IPC分类号： H01L29/06 , H01L29/423 , H01L29/66 , H01L21/762
CPC分类号： H01L29/0653 , H01L21/76224 , H01L29/4232 , H01L29/66553
摘要： A semiconductor device includes a lower pattern extending in a first direction and sheet patterns spaced apart therefrom in a second direction, a gate structure on the lower pattern and including a gate insulating layer, a gate spacer, and a gate electrode, a source/drain pattern on the lower pattern and in contact with the sheet patterns and the gate insulating layer, and a first etch blocking pattern between the gate spacer and the source/drain pattern. The gate spacer includes an inner sidewall extending in the third direction, and a connection sidewall extending from the inner sidewall in the first direction. The source/drain pattern includes a semiconductor filling layer on a semiconductor liner layer that is in contact with the sheet pattern and includes a facet surface extending from the connection sidewall. The first etch blocking pattern is in contact with the facet surface and the connection sidewall.
-
公开(公告)号：US12021131B2
公开(公告)日：2024-06-25
申请号：US17460446
申请日：2021-08-30
发明人： Seo Jin Jeong , Do Hyun Go , Seok Hoon Kim , Jung Taek Kim , Pan Kwi Park , Moon Seung Yang , Min-Hee Choi , Ryong Ha
IPC分类号： H01L29/423 , H01L29/06 , H01L29/08 , H01L29/417 , H01L29/786
CPC分类号： H01L29/42392 , H01L29/0665 , H01L29/0847 , H01L29/41775 , H01L29/78696
摘要： A semiconductor device includes an active pattern including a lower pattern and a plurality of sheet patterns; a gate structure disposed on the lower pattern and surrounding the plurality of sheet patterns; and a source/drain pattern filling a source/drain recess formed on one side of the gate structure. The source/drain pattern includes a first semiconductor pattern extending along the source/drain recess and contacting the lower pattern, a second and third semiconductor patterns sequentially disposed on the first semiconductor pattern, a lower surface of the third semiconductor pattern is disposed below a lower surface of a lowermost sheet pattern, a side surface of the third semiconductor pattern includes a planar portion, and a thickness of the second semiconductor pattern on the lower surface of the third semiconductor pattern is different from a thickness of the second semiconductor pattern on the planar portion of the side surface of the third semiconductor pattern.
-
公开(公告)号：US11942551B2
公开(公告)日：2024-03-26
申请号：US17519967
申请日：2021-11-05
发明人： Jung Taek Kim , Seok Hoon Kim , Pan Kwi Park , Moon Seung Yang , Seo Jin Jeong , Min-Hee Choi , Ryong Ha
IPC分类号： H01L29/786 , H01L29/06 , H01L29/423
CPC分类号： H01L29/78618 , H01L29/0665 , H01L29/42392 , H01L29/78696
摘要： A semiconductor device includes a multi-channel active pattern, a plurality of gate structures on the multi-channel active pattern and spaced apart from each other in a first direction, the plurality of gate structures including a gate electrode that extends in a second direction different from the first direction, a source/drain recess between the adjacent gate structures, and a source/drain pattern on the multi-channel active pattern in the source/drain recess, wherein the source/drain pattern includes: a semiconductor liner layer including silicon-germanium and extending along the source/drain recess, a semiconductor filling layer including silicon-germanium on the semiconductor liner layer, and at least one or more semiconductor insertion layers between the semiconductor liner layer and the semiconductor filling layer, and wherein the at least one or more semiconductor insertion layers have a saddle structure.
-
公开(公告)号：US11133421B2
公开(公告)日：2021-09-28
申请号：US16808857
申请日：2020-03-04
发明人： Moon Seung Yang , Eun Hye Choi , Seung Mo Kang , Yong Seung Kim , Jung Taek Kim , Min-Hee Choi
IPC分类号： H01L29/786 , H01L29/06 , H01L29/66 , H01L21/02 , H01L29/423
摘要： A semiconductor device includes a fin-type pattern on a substrate, the fin-type pattern extending in a first direction and protruding from the substrate in a third direction, a first wire pattern on the fin-type pattern, the first wire pattern being spaced apart from the fin-type pattern in the third direction, and a gate electrode extending in a second direction, which is perpendicular to the first and third directions, and surrounding the first wire pattern, the gate electrode including a first portion that overlaps with the fin-type pattern in the second direction and a second portion corresponding to a remainder of the gate electrode except for the first portion.
-
公开(公告)号：US20240194789A1
公开(公告)日：2024-06-13
申请号：US18588163
申请日：2024-02-27
发明人： Jung Taek Kim , Seok Hoon Kim , Pan Kwi Park , Moon Seung Yang , Seo Jin Jeong , Min-Hee Choi , Ryong Ha
IPC分类号： H01L29/786 , H01L29/06 , H01L29/423
CPC分类号： H01L29/78618 , H01L29/0665 , H01L29/42392 , H01L29/78696
摘要： A semiconductor device includes a multi-channel active pattern, a plurality of gate structures on the multi-channel active pattern and spaced apart from each other in a first direction, the plurality of gate structures including a gate electrode that extends in a second direction different from the first direction, a source/drain recess between the adjacent gate structures, and a source/drain pattern on the multi-channel active pattern in the source/drain recess, wherein the source/drain pattern includes: a semiconductor liner layer including silicon-germanium and extending along the source/drain recess, a semiconductor filling layer including silicon-germanium on the semiconductor liner layer, and at least one or more semiconductor insertion layers between the semiconductor liner layer and the semiconductor filling layer, and wherein the at least one or more semiconductor insertion layers have a saddle structure.
-
公开(公告)号：US11990552B2
公开(公告)日：2024-05-21
申请号：US17533719
申请日：2021-11-23
发明人： Ryong Ha , Seok Hoon Kim , Jung Taek Kim , Pan Kwi Park , Moon Seung Yang , Seo Jin Jeong
IPC分类号： H01L29/786 , H01L29/66 , H01L29/423
CPC分类号： H01L29/78618 , H01L29/6653 , H01L29/66742 , H01L29/78696 , H01L29/42392
摘要： A semiconductor device includes an active pattern which includes a lower pattern, and a sheet pattern that is spaced apart from the lower pattern in a first direction, a gate structure on the lower pattern that includes a gate electrode that surrounds the sheet pattern, the gate electrode extending in a second direction that is perpendicular to the first direction, and a source/drain pattern on the lower pattern and in contact with the sheet pattern. A contact surface between the sheet pattern and the source/drain pattern has a first width in the second direction, and the sheet pattern has a second width in the second direction that is greater than the first width.
-
公开(公告)号：US20220190168A1
公开(公告)日：2022-06-16
申请号：US17519967
申请日：2021-11-05
发明人： Jung Taek Kim , Seok Hoon Kim , Pan Kwi Park , Moon Seung Yang , Seo Jin Jeong , Min-Hee Choi , Ryong Ha
IPC分类号： H01L29/786 , H01L29/06 , H01L29/423
摘要： A semiconductor device includes a multi-channel active pattern, a plurality of gate structures on the multi-channel active pattern and spaced apart from each other in a first direction, the plurality of gate structures including a gate electrode that extends in a second direction different from the first direction, a source/drain recess between the adjacent gate structures, and a source/drain pattern on the multi-channel active pattern in the source/drain recess, wherein the source/drain pattern includes: a semiconductor liner layer including silicon-germanium and extending along the source/drain recess, a semiconductor filling layer including silicon-germanium on the semiconductor liner layer, and at least one or more semiconductor insertion layers between the semiconductor liner layer and the semiconductor filling layer, and wherein the at least one or more semiconductor insertion layers have a saddle structure.
-
公开(公告)号：US20220181500A1
公开(公告)日：2022-06-09
申请号：US17533719
申请日：2021-11-23
发明人： Ryong Ha , Seok Hoon Kim , Jung Taek Kim , Pan Kwi Park , Moon Seung Yang , Seo Jin Jeong
IPC分类号： H01L29/786 , H01L29/66
摘要： A semiconductor device includes an active pattern which includes a lower pattern, and a sheet pattern that is spaced apart from the lower pattern in a first direction, a gate structure on the lower pattern that includes a gate electrode that surrounds the sheet pattern, the gate electrode extending in a second direction that is perpendicular to the first direction, and a source/drain pattern on the lower pattern and in contact with the sheet pattern. A contact surface between the sheet pattern and the source/drain pattern has a first width in the second direction, and the sheet pattern has a second width in the second direction that is greater than the first width.
-
公开(公告)号：US11569389B2
公开(公告)日：2023-01-31
申请号：US17470341
申请日：2021-09-09
发明人： Moon Seung Yang , Eun Hye Choi , Seung Mo Kang , Yong Seung Kim , Jung Taek Kim , Min-Hee Choi
IPC分类号： H01L29/786 , H01L29/06 , H01L29/423
摘要： A semiconductor device includes a fin-type pattern on a substrate, the fin-type pattern extending in a first direction and protruding from the substrate in a third direction, a first wire pattern on the fin-type pattern, the first wire pattern being spaced apart from the fin-type pattern in the third direction, and a gate electrode extending in a second direction, which is perpendicular to the first and third directions, and surrounding the first wire pattern, the gate electrode including a first portion that overlaps with the fin-type pattern in the second direction and a second portion corresponding to a remainder of the gate electrode except for the first portion.
-
-
-
-
-
-
-
-
搜索结果
9 条记录 (耗时 0.017 秒)
