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    FLEXIBLE DISPLAY APPARATUS AND METHOD OF MANUFACTURING SAME
    31.
    发明申请
    FLEXIBLE DISPLAY APPARATUS AND METHOD OF MANUFACTURING SAME 有权
    柔性显示装置及其制造方法

    公开(公告)号：US20150021631A1

    公开(公告)日：2015-01-22

    申请号：US14162465

    申请日：2014-01-23

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Myung-Soo Huh ,  Sung-Chul Kim ,  Suk-Won Jung

    IPC: H01L27/12

    CPC classification number: H01L27/1218 ,  H01L27/1266 ,  H01L29/78603 ,  H01L29/78684

    Abstract: A method of manufacturing a flexible display apparatus includes: preparing a support substrate; forming a first graphene oxide layer having a first electrical charge on the support substrate; forming a second graphene oxide layer having a second electrical charge on the first graphene oxide layer; forming a flexible substrate on the second graphene oxide layer; forming a display unit on the flexible substrate; and separating the support substrate and the flexible substrate from each other.

    Abstract translation: 柔性显示装置的制造方法包括：准备支撑基板; 在所述支撑基板上形成具有第一电荷的第一石墨烯氧化物层; 在所述第一石墨烯氧化物层上形成具有第二电荷的第二石墨烯氧化物层; 在第二石墨烯氧化物层上形成柔性基板; 在柔性基板上形成显示单元; 以及将所述支撑基板和所述柔性基板彼此分离。

    MONOMER VAPORIZING DEVICE AND METHOD OF CONTROLLING THE SAME
    32.
    发明申请
    MONOMER VAPORIZING DEVICE AND METHOD OF CONTROLLING THE SAME 审中-公开
    单体蒸发装置及其控制方法

    公开(公告)号：US20140161966A1

    公开(公告)日：2014-06-12

    申请号：US14010769

    申请日：2013-08-27

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Yong-Suk Lee ,  Myung-Soo Huh ,  Suk-Won Jung ,  Jeong-Ho Yi ,  Mi-Ra An

    IPC: C23C16/52

    CPC classification number: C23C14/543 ,  B05D1/60 ,  C23C14/12 ,  C23C14/246 ,  C23C14/544 ,  C23C16/4481

    Abstract: A monomer vaporizing device and a method of controlling the same are disclosed. The monomer vaporizing device includes: a first vaporizer and a second vaporizer that receive a purge gas and vaporize a first monomer and a second monomer, respectively; a first flow pipe and a second flow pipe that are connected to the respective vaporizers and allow the first monomer and the second monomer, vaporized by the respective vaporizers, to flow therethrough; a transition tube that is connected to the first flow pipe and the second flow pipe and supplies at least one of the first monomer and the second monomer to a deposition chamber; and a control valve apparatus that regulates monomer flow into the deposition chamber. The device facilitates smooth and uninterrupted application of monomer to the interior of a deposition chamber.

    Abstract translation: 公开了一种单体蒸发装置及其控制方法。 单体蒸发装置包括：第一蒸发器和第二蒸发器，其分别接收吹扫气体并蒸发第一单体和第二单体; 第一流管和第二流管，其连接到相应的蒸发器并允许由各蒸发器蒸发的第一单体和第二单体流过其中; 过渡管，其连接到所述第一流管和所述第二流管，并且将至少一个所述第一单体和所述第二单体供应到沉积室; 以及调节单体流入沉积室的控制阀装置。 该装置有助于将单体平滑且不间断地应用于沉积室的内部。

    Vapor deposition apparatus
    33.
    发明授权
    Vapor deposition apparatus 有权

    公开(公告)号：US10944082B2

    公开(公告)日：2021-03-09

    申请号：US16045909

    申请日：2018-07-26

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Myung-Soo Huh ,  Suk-Won Jung ,  Jin-Kwang Kim ,  In-Kyo Kim ,  Choel-Min Jang

    IPC: H01L51/56 ,  H01J37/32 ,  C23C16/452

    Abstract: A vapor deposition apparatus for forming a deposition layer on a substrate, the vapor deposition apparatus includes a supply unit configured to receive a first source gas, a reaction space connected to the supply unit, a plasma generator in the reaction space, a first injection unit configured to inject a deposition source material to the substrate, the deposition source material including the first source gas, and a filament unit in the reaction space, the filament unit being connected to a power source.

    Monomer vaporizing device and method of controlling the same
    34.
    发明授权
    Monomer vaporizing device and method of controlling the same 有权

    公开(公告)号：US10266941B2

    公开(公告)日：2019-04-23

    申请号：US15261629

    申请日：2016-09-09

    Applicant: Samsung Display Co., Ltd.

    Inventor： Yong-Suk Lee ,  Myung-Soo Huh ,  Suk-Won Jung ,  Jeong-Ho Yi ,  Mi-Ra An

    IPC: C23C16/00 ,  C23C14/54 ,  C23C14/24 ,  C23C16/448 ,  C23C14/12 ,  B05D1/00

    Abstract: A monomer vaporizing device and a method of controlling the same are disclosed. The monomer vaporizing device includes: a first vaporizer and a second vaporizer that receive a purge gas and vaporize a first monomer and a second monomer, respectively; a first flow pipe and a second flow pipe that are connected to the respective vaporizers and allow the first monomer and the second monomer, vaporized by the respective vaporizers, to flow therethrough; a transition tube that is connected to the first flow pipe and the second flow pipe and supplies at least one of the first monomer and the second monomer to a deposition chamber; and a control valve apparatus that regulates monomer flow into the deposition chamber. The device facilitates smooth and uninterrupted application of monomer to the interior of a deposition chamber.

    Method of depositing an atomic layer
    35.
    发明授权
    Method of depositing an atomic layer 有权
    沉积原子层的方法

    公开(公告)号：US09556520B2

    公开(公告)日：2017-01-31

    申请号：US14296029

    申请日：2014-06-04

    Applicant: Samsung Display Co., Ltd.

    Inventor： Choel-Min Jang ,  Sung-Hun Key ,  In-Kyo Kim ,  Suk-Won Jung ,  Myung-Soo Huh

    IPC: C23C16/455 ,  C23C16/458

    CPC classification number: C23C16/45574 ,  C23C16/45551 ,  C23C16/458

    Abstract: A method of depositing a layer includes spraying a source gas and a reactant gas onto a substrate disposed on a susceptor unit using at least one source gas spray nozzle and at least one reactant gas nozzle to form a first source gas region and a first reactant gas region on the substrate, respectively, moving the susceptor unit by a distance corresponding to a width of the source gas spray nozzle or a width of the reactant gas spray nozzle in a first direction, and spraying the source gas and the reactant gas onto the first reactant gas region and the first source gas region using the source gas spray nozzle and the reactant gas nozzle, respectively, to form a first monolayer.

    Abstract translation: 沉积层的方法包括使用至少一个源气体喷嘴和至少一个反应气体喷嘴将源气体和反应气体喷射到设置在基座单元上的基板上，以形成第一源气体区域和第一反应气体 区域，分别使基座单元沿着第一方向移动对应于源气体喷嘴的宽度的距离或反应气体喷嘴的宽度，并将源气体和反应气体喷射到第一方向上 反应气体区域和第一源气体区域分别使用源气体喷嘴和反应气体喷嘴形成第一单层。

    Organic light-emitting apparatus and method of manufacturing the same
    37.
    发明授权
    Organic light-emitting apparatus and method of manufacturing the same 有权
    有机发光装置及其制造方法

    公开(公告)号：US09450206B2

    公开(公告)日：2016-09-20

    申请号：US15046024

    申请日：2016-02-17

    Applicant: Samsung Display Co., Ltd.

    Inventor： Myung-Soo Huh ,  Jae-Hyun Kim ,  Jin-Kwang Kim ,  Cheol-Lae Roh ,  Suk-Won Jung ,  Cheol-Min Jang

    IPC: H01L29/08 ,  H01L35/24 ,  H01L51/00 ,  H01L51/52

    CPC classification number: H01L51/5256 ,  H01L51/5253

    Abstract: An organic light-emitting apparatus including: a substrate; an organic light-emitting device disposed on the substrate and including a first electrode, a second electrode, and an intermediate layer disposed between the first electrode and the second electrode; and an encapsulation layer provided to cover the organic light-emitting device. The encapsulation layer includes a first inorganic layer including a first fracture point, and a first fracture control layer provided on the first inorganic layer to seal the first fracture point.

    Abstract translation: 一种有机发光装置，包括：基板; 设置在所述基板上并且包括设置在所述第一电极和所述第二电极之间的第一电极，第二电极和中间层的有机发光器件; 以及设置成覆盖有机发光器件的封装层。 封装层包括包含第一断裂点的第一无机层和设置在第一无机层上以密封第一断裂点的第一断裂控制层。

    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
    40.
    发明申请
    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
    等离子体加工设备和等离子体处理方法

    公开(公告)号：US20150110974A1

    公开(公告)日：2015-04-23

    申请号：US14445951

    申请日：2014-07-29

    Applicant: Samsung Display Co., Ltd.

    Inventor： Yong-Suk LEE ,  Suk-Won Jung ,  Myung-Soo Huh ,  Mi-Ra An

    IPC: C23C16/46 ,  C23C16/455 ,  C23C16/34 ,  C23C16/52 ,  C23C16/509 ,  C23C16/40

    CPC classification number: C23C16/46 ,  C23C16/345 ,  C23C16/401 ,  C23C16/4586 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32091 ,  H01J37/32165 ,  H01L21/67109 ,  H01L21/67248

    Abstract: A plasma processing apparatus including: a chamber configured to provide a space for processing a substrate; a substrate stage configured to support the substrate within the chamber and including a first electrode, the first electrode configured to receive a first radio frequency signal; a second electrode disposed on an upper portion of the chamber to face the first electrode, the second electrode configured to receive a second radio frequency signal; a gas supply unit configured to supply a process gas onto the substrate within the chamber; and a thermal control unit configured to circulate a heat transfer medium through a first fluid passage provided in the first electrode and a second fluid passage provided in the second electrode to maintain the first and second electrodes at the same temperature.

    Abstract translation: 一种等离子体处理装置，包括：室，被配置为提供用于处理基板的空间; 衬底台，被配置为在所述腔室内支撑所述衬底并且包括第一电极，所述第一电极被配置为接收第一射频信号; 第二电极，设置在所述室的上部以面对所述第一电极，所述第二电极被配置为接收第二射频信号; 气体供给单元，其构造成将处理气体供给到所述室内的所述基板上; 以及热控制单元，其被配置为使传热介质循环通过设置在第一电极中的第一流体通道和设置在第二电极中的第二流体通道，以将第一和第二电极保持在相同的温度。

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