MONOMER VAPORIZING DEVICE AND METHOD OF CONTROLLING THE SAME
    2.
    发明申请
    MONOMER VAPORIZING DEVICE AND METHOD OF CONTROLLING THE SAME 审中-公开
    单体蒸发装置及其控制方法

    公开(公告)号:US20140161966A1

    公开(公告)日:2014-06-12

    申请号:US14010769

    申请日:2013-08-27

    Abstract: A monomer vaporizing device and a method of controlling the same are disclosed. The monomer vaporizing device includes: a first vaporizer and a second vaporizer that receive a purge gas and vaporize a first monomer and a second monomer, respectively; a first flow pipe and a second flow pipe that are connected to the respective vaporizers and allow the first monomer and the second monomer, vaporized by the respective vaporizers, to flow therethrough; a transition tube that is connected to the first flow pipe and the second flow pipe and supplies at least one of the first monomer and the second monomer to a deposition chamber; and a control valve apparatus that regulates monomer flow into the deposition chamber. The device facilitates smooth and uninterrupted application of monomer to the interior of a deposition chamber.

    Abstract translation: 公开了一种单体蒸发装置及其控制方法。 单体蒸发装置包括:第一蒸发器和第二蒸发器,其分别接收吹扫气体并蒸发第一单体和第二单体; 第一流管和第二流管,其连接到相应的蒸发器并允许由各蒸发器蒸发的第一单体和第二单体流过其中; 过渡管,其连接到所述第一流管和所述第二流管,并且将至少一个所述第一单体和所述第二单体供应到沉积室; 以及调节单体流入沉积室的控制阀装置。 该装置有助于将单体平滑且不间断地应用于沉积室的内部。

    APPARATUS AND METHOD FOR MANUFACTURING THIN FILM ENCAPSULATION
    5.
    发明申请
    APPARATUS AND METHOD FOR MANUFACTURING THIN FILM ENCAPSULATION 有权
    制造薄膜封装的装置和方法

    公开(公告)号:US20140179041A1

    公开(公告)日:2014-06-26

    申请号:US13973954

    申请日:2013-08-22

    Abstract: An apparatus and method for manufacturing a thin film encapsulation includes: a first cluster configured to form a first inorganic layer on a display substrate using a sputtering process; a second cluster configured to form a first organic layer on the first inorganic layer on the display substrate using a monomer deposition process; and a third cluster configured to form a second inorganic layer on the first organic layer on the display substrate using a chemical vapor deposition (CVD) process or a plasma enhanced chemical vapor deposition (PECVD) process.

    Abstract translation: 一种用于制造薄膜封装的装置和方法包括:第一簇,其被配置为使用溅射工艺在显示基板上形成第一无机层; 第二簇,其被配置为使用单体沉积工艺在所述显示基板上的所述第一无机层上形成第一有机层; 以及第三簇,其被配置为使用化学气相沉积(CVD)工艺或等离子体增强化学气相沉积(PECVD)工艺在所述显示衬底上的所述第一有机层上形成第二无机层。

    Monomer vaporizing device and method of controlling the same

    公开(公告)号:US10266941B2

    公开(公告)日:2019-04-23

    申请号:US15261629

    申请日:2016-09-09

    Abstract: A monomer vaporizing device and a method of controlling the same are disclosed. The monomer vaporizing device includes: a first vaporizer and a second vaporizer that receive a purge gas and vaporize a first monomer and a second monomer, respectively; a first flow pipe and a second flow pipe that are connected to the respective vaporizers and allow the first monomer and the second monomer, vaporized by the respective vaporizers, to flow therethrough; a transition tube that is connected to the first flow pipe and the second flow pipe and supplies at least one of the first monomer and the second monomer to a deposition chamber; and a control valve apparatus that regulates monomer flow into the deposition chamber. The device facilitates smooth and uninterrupted application of monomer to the interior of a deposition chamber.

    Thin film encapsulation layer manufacturing apparatus and method of manufacturing display apparatus using the same

    公开(公告)号:US10202683B2

    公开(公告)日:2019-02-12

    申请号:US14296826

    申请日:2014-06-05

    Abstract: A thin film encapsulation layer manufacturing apparatus is provided that may include a transfer chamber, a sputtering chamber, a monomer deposition chamber, a chemical vapor deposition (CVD) chamber, and an atomic layer deposition (ALD) chamber. The transfer chamber may be connected to each of the other chambers, and may be configured to align a substrate. Each of the other chambers may be configured to receive from and transfer to the transfer chamber a substrate. The sputtering chamber may be configured to form a first inorganic layer on the substrate by a sputtering process. The monomer deposition chamber may be configured to deposit a first organic layer on the first inorganic layer. The CVD chamber may be configured to form a second inorganic layer on the first organic layer. The ALD chamber may be configured to form a third inorganic layer on the second inorganic layer.

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