Canister
    1.
    发明授权
    Canister 有权

    公开(公告)号:US09057125B2

    公开(公告)日:2015-06-16

    申请号:US13710310

    申请日:2012-12-10

    CPC classification number: C23C16/00 B01F3/04 C23C16/4481 C23C16/4482

    Abstract: A canister includes an accommodation portion for accommodating a liquid material; an outlet pipe that is connected to the accommodation portion so as to discharge a gas material obtained by vaporizing the liquid material; a blocking cover that is connected to an upper surface of the accommodation portion; and a plurality of baffle plates that are disposed in the accommodation portion and are spaced apart from each other. The canister further includes a restrictor including a main body member that is disposed between the plurality of baffle plates and the blocking cover and is connected to an internal surface of the accommodation portion, an extension member extending from the main body member, and a through portion that is formed through the main body member and the extension member. A deposition procedure using the canister is efficiently performed and characteristics of a deposition layer are easily improved.

    Abstract translation: 罐包括用于容纳液体材料的容纳部分; 出口管,其连接到容纳部分,以排出通过汽化液体材料获得的气体材料; 阻挡盖,其连接到所述容纳部的上表面; 以及设置在容纳部分中并彼此间隔开的多个挡板。 所述罐还包括限制器,所述限制器包括主体部件,所述主体部件设置在所述多个挡板和所述阻挡盖之间,并且连接到所述容纳部的内表面,从所述主体部件延伸的延伸部件, 其通过主体构件和延伸构件形成。 可以有效地进行使用罐的沉积工序,容易地提高沉积层的特性。

    Vapor deposition apparatus, vapor deposition method and method of manufacturing organic light emitting display apparatus
    3.
    发明授权
    Vapor deposition apparatus, vapor deposition method and method of manufacturing organic light emitting display apparatus 有权
    蒸镀装置,蒸镀法及制造有机发光显示装置的方法

    公开(公告)号:US09481929B2

    公开(公告)日:2016-11-01

    申请号:US14177180

    申请日:2014-02-10

    CPC classification number: C23C16/45551

    Abstract: A vapor deposition apparatus for depositing thin films on a substrate includes a supply unit including a plurality of linear supply members configured to supply at least one gas; and a nozzle unit including a plurality of nozzle members connected to the plurality of supply members and configured to supply the at least one gas toward the substrate, wherein two adjacent nozzle members of the plurality of nozzle members are connected to at least one common supply member of the plurality of supply members.

    Abstract translation: 一种用于在衬底上沉积薄膜的气相沉积设备包括:供给单元,包括多个线性供应构件,其被构造成供应至少一种气体; 以及喷嘴单元,其包括连接到所述多个供应构件并被配置为朝向所述基板供应所述至少一种气体的多个喷嘴构件,其中所述多个喷嘴构件中的两个相邻的喷嘴构件连接到至少一个共同的供应构件 的多个供应构件。

    VAPOR DEPOSITION APPARATUS
    5.
    发明申请
    VAPOR DEPOSITION APPARATUS 审中-公开
    蒸气沉积装置

    公开(公告)号:US20150101535A1

    公开(公告)日:2015-04-16

    申请号:US14188017

    申请日:2014-02-24

    CPC classification number: C23C16/45563 C23C16/452 C23C16/45536 C23C16/45551

    Abstract: A vapor deposition apparatus includes a substrate mount unit on which a substrate is mounted, a plurality of first nozzle units which injects a first raw material in a direction of the substrate mount unit, a plurality of second nozzle units which is alternately disposed with the plurality of first nozzle units and injects a second raw material in the direction of the substrate mount unit, and a plasma module unit which supplies the second raw material to the plurality of second nozzle units. The second raw material is a radical, and the substrate mount unit includes an electrostatic generation part.

    Abstract translation: 一种气相沉积设备,包括:基板安装单元,其上安装有基板;多个第一喷嘴单元,其在所述基板安装单元的方向上注入第一原料;多个第二喷嘴单元,其与所述多个第一喷嘴单元交替布置; 的第一喷嘴单元,并且在所述基板安装单元的方向上注入第二原料;以及等离子体模块单元,其将所述第二原料供给到所述多个第二喷嘴单元。 第二原料是自由基,基板安装单元包括静电发生部。

    VAPOR DEPOSITION APPARATUS, VAPOR DEPOSITION METHOD AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY APPARATUS
    6.
    发明申请
    VAPOR DEPOSITION APPARATUS, VAPOR DEPOSITION METHOD AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY APPARATUS 有权
    蒸气沉积装置,蒸气沉积方法及制造有机发光显示装置的方法

    公开(公告)号:US20150072453A1

    公开(公告)日:2015-03-12

    申请号:US14177180

    申请日:2014-02-10

    CPC classification number: C23C16/45551

    Abstract: A vapor deposition apparatus for depositing thin films on a substrate includes a supply unit including a plurality of linear supply members configured to supply at least one gas; and a nozzle unit including a plurality of nozzle members connected to the plurality of supply members and configured to supply the at least one gas toward the substrate, wherein two adjacent nozzle members of the plurality of nozzle members are connected to at least one common supply member of the plurality of supply members.

    Abstract translation: 一种用于在衬底上沉积薄膜的气相沉积设备包括:供给单元,包括多个线性供应构件,其被构造成供应至少一种气体; 以及喷嘴单元,其包括连接到所述多个供应构件并被配置为朝向所述基板供应所述至少一种气体的多个喷嘴构件,其中所述多个喷嘴构件中的两个相邻的喷嘴构件连接到至少一个共同的供应构件 的多个供应构件。

    Vapor deposition apparatus
    8.
    发明授权

    公开(公告)号:US10944082B2

    公开(公告)日:2021-03-09

    申请号:US16045909

    申请日:2018-07-26

    Abstract: A vapor deposition apparatus for forming a deposition layer on a substrate, the vapor deposition apparatus includes a supply unit configured to receive a first source gas, a reaction space connected to the supply unit, a plasma generator in the reaction space, a first injection unit configured to inject a deposition source material to the substrate, the deposition source material including the first source gas, and a filament unit in the reaction space, the filament unit being connected to a power source.

    Method of depositing an atomic layer
    9.
    发明授权
    Method of depositing an atomic layer 有权
    沉积原子层的方法

    公开(公告)号:US09556520B2

    公开(公告)日:2017-01-31

    申请号:US14296029

    申请日:2014-06-04

    CPC classification number: C23C16/45574 C23C16/45551 C23C16/458

    Abstract: A method of depositing a layer includes spraying a source gas and a reactant gas onto a substrate disposed on a susceptor unit using at least one source gas spray nozzle and at least one reactant gas nozzle to form a first source gas region and a first reactant gas region on the substrate, respectively, moving the susceptor unit by a distance corresponding to a width of the source gas spray nozzle or a width of the reactant gas spray nozzle in a first direction, and spraying the source gas and the reactant gas onto the first reactant gas region and the first source gas region using the source gas spray nozzle and the reactant gas nozzle, respectively, to form a first monolayer.

    Abstract translation: 沉积层的方法包括使用至少一个源气体喷嘴和至少一个反应气体喷嘴将源气体和反应气体喷射到设置在基座单元上的基板上,以形成第一源气体区域和第一反应气体 区域,分别使基座单元沿着第一方向移动对应于源气体喷嘴的宽度的距离或反应气体喷嘴的宽度,并将源气体和反应气体喷射到第一方向上 反应气体区域和第一源气体区域分别使用源气体喷嘴和反应气体喷嘴形成第一单层。

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