IRON NITRIDE PERMANENT MAGNET AND TECHNIQUE FOR FORMING IRON NITRIDE PERMANENT MAGNET
    32.
    发明申请
    IRON NITRIDE PERMANENT MAGNET AND TECHNIQUE FOR FORMING IRON NITRIDE PERMANENT MAGNET 有权
    硝酸铁永久磁铁和形成铁硝酸盐永磁体的技术

    公开(公告)号:US20150380135A1

    公开(公告)日:2015-12-31

    申请号:US14766101

    申请日:2014-02-06

    摘要: A bulk permanent magnetic material may include between about 5 volume percent and about 40 volume percent Fe16N2 phase domains, a plurality of nonmagnetic atoms or molecules forming domain wall pinning sites, and a balance soft magnetic material, wherein at least some of the soft magnetic material is magnetically coupled to the Fe16N2 phase domains via exchange spring coupling. In some examples, a bulk permanent magnetic material may be formed by implanting N+ ions in an iron workpiece using ion implantation to form an iron nitride workpiece, pre-annealing the iron nitride workpiece to attach the iron nitride workpiece to a substrate, and post-annealing the iron nitride workpiece to form Fe16N2 phase domains within the iron nitride workpiece.

    摘要翻译: 体积永久磁性材料可以包括约5体积%至约40体积%的Fe 16 N 2相域,形成畴壁钉扎位点的多个非磁性原子或分子,以及平衡软磁材料,其中至少一些软磁性材料 通过交换弹簧耦合与Fe16N2相域磁耦合。 在一些实例中,可以通过使用离子注入将N +离子注入到铁工件中以形成氮化铁工件,预氧化氮化物工件预氧化氮化物工件以将氮化铁工件附着到衬底上来形成块状永久磁性材料, 退火氮化铁工件以在氮化铁工件内形成Fe16N2相域。

    MULTI-SURFACE NANOPARTICLE SOURCES AND DEPOSITION SYSTEMS
    33.
    发明申请
    MULTI-SURFACE NANOPARTICLE SOURCES AND DEPOSITION SYSTEMS 审中-公开
    多表面纳米材料源和沉积系统

    公开(公告)号:US20150376772A1

    公开(公告)日:2015-12-31

    申请号:US14765284

    申请日:2014-01-31

    IPC分类号: C23C14/34 H01J37/34

    摘要: A multi-surface nanoparticle source includes a first end having an inlet configured to receive a flow of gas, a second end comprising an outlet through which nanoparticles exit the nanoparticle source, and two or more targets spaced apart and arranged about an axis extending from the first end to the second end. At least at least one of the targets is hollow, and the inlet is arranged to direct a flow of the gas through the hollow target, between at least two of the targets, or both. The gas impacts the targets, releasing atoms from the target and through the second end. The targets may be arranged lengthwise and concentrically about the axis. In some cases, a multi-surface nanoparticle source includes one or more magnets. Nanoparticles formed with a multi-surface nanoparticle deposition system may be homogeneous or have a core-shell structure.

    摘要翻译: 多表面纳米颗粒源包括第一端,其具有构造成接收气流的入口,第二端包括纳米颗粒离开纳米颗粒源的出口,以及间隔开并且围绕从 第一端到第二端。 目标中的至少一个目标是中空的,并且入口布置成引导气体流通过中空目标,至少两个目标之间或两者。 气体会影响目标,释放出原子,并通过第二端。 靶可以纵向地并且围绕轴线同心地布置。 在一些情况下,多表面纳米颗粒源包括一个或多个磁体。 用多表面纳米颗粒沉积系统形成的纳米颗粒可以是均匀的或具有核 - 壳结构。

    OPTICAL INTERCONNECT IN SPIN-BASED COMPUTATION AND COMMUNICATION SYSTEMS
    34.
    发明申请
    OPTICAL INTERCONNECT IN SPIN-BASED COMPUTATION AND COMMUNICATION SYSTEMS 有权
    基于旋转计算和通信系统的光学互连

    公开(公告)号:US20150333839A1

    公开(公告)日:2015-11-19

    申请号:US14279990

    申请日:2014-05-16

    发明人: Mo Li Jian-Ping Wang

    IPC分类号: H04B10/67 H04B10/532

    摘要: Techniques are described for data transfer in spin-based systems where digital bit values are represented by magnetization states of magnetoresistive devices rather than voltages or currents. For data transmission, a spin-based signal is converted to an optical signal and transmitted via an optical transport. For data reception, the optical signal is received via the optical transport and converted back to a spin-based signal. Such data transfer may not require an intervening conversion of the spin-based signal to charge-based signal that relies on voltages or currents to represent digital bit values. In addition, techniques are described to use magnetoresistive devices to control the amount of current or voltage that is delivered, where the magnetization state of the magnetoresistive device is set by an optical signal.

    摘要翻译: 描述了基于自旋系统中的数据传输的技术,其中数字位值由磁阻器件的磁化状态而不是电压或电流表示。 对于数据传输,基于自旋的信号被转换为光信号并通过光传输传输。 对于数据接收,光信号经由光传输接收并被转换回到基于自旋的信号。 这种数据传输可能不需要基于自旋的信号到基于电压或电流的基于电荷的信号的中间转换来表示数字位值。 此外,描述了技术来使用磁阻器件来控制所传送的电流或电压的量,其中磁阻器件的磁化状态由光信号设定。

    EMBEDDED MASK PATTERNING PROCESS FOR FABRICATING MAGNETIC MEDIA AND OTHER STRUCTURES
    35.
    发明申请
    EMBEDDED MASK PATTERNING PROCESS FOR FABRICATING MAGNETIC MEDIA AND OTHER STRUCTURES 有权
    用于制作磁性介质和其他结构的嵌入式掩模图案

    公开(公告)号:US20150221483A1

    公开(公告)日:2015-08-06

    申请号:US14422262

    申请日:2013-08-21

    IPC分类号: H01J37/32 C23C16/44

    摘要: In some examples, a method comprising depositing a functional layer (e.g., a magnetic layer) over a substrate; depositing a granular layer over the functional layer, the granular layer including a first material defining a plurality of grains separated by a second material defining grain boundaries of the plurality of grains; removing the second material from the granular layer such that the plurality of grains of the granular layer define a hard mask layer on the functional layer; and removing portions of the functional layer not masked by the hard mask layer, wherein the depositing of the functional layer, the depositing of the granular layer, removing the second material, and removing the portions of the functional layer are performed in a vacuum environment.

    摘要翻译: 在一些实例中,包括在衬底上沉积功能层(例如,磁性层)的方法; 在所述功能层上沉积颗粒层,所述颗粒层包括限定由限定所述多个颗粒的晶界的第二材料分开的多个晶粒的第一材料; 从所述颗粒层中去除所述第二材料,使得所述颗粒层的所述多个颗粒在所述功能层上限定硬掩模层; 并且去除未被硬掩模层掩蔽的功能层的部分,其中功能层的沉积,颗粒层的沉积,去除第二材料以及去除功能层的部分在真空环境中进行。

    STOCHASTIC COMPUTING USING LOGIC-MEMORY CELLS

    公开(公告)号:US20240071445A1

    公开(公告)日:2024-02-29

    申请号:US18454441

    申请日:2023-08-23

    IPC分类号: G11C7/22 G11C7/10

    摘要: A circuit includes a first two-state device, a second two-state device and a third two-state device, each two-state device having a first resistance in a first state and a second resistance in a second state. First control elements are configured to apply a first voltage to the first two-state device to stochastically place the first two-state device in either the first state or the second state. Second control elements are configured to apply a second voltage to the second two-state device to stochastically place the second two-state device in either the first state or the second state. Third control elements are configured to send respective currents through the first two-state device and the second two-state device so as to place the third two-state device in either the first state or the second state based on the state of the first two-state device and the state of the second two-state devices.