公开(公告)号：US10410935B1

公开(公告)日：2019-09-10

申请号：US15428835

申请日：2017-02-09

Applicant: KLA-Tencor Corporation

Inventor： Natalia Malkova ,  Leonid Poslavsky ,  Ming Di ,  Qiang Zhao ,  Dawei Hu

IPC: H01L21/66 ,  G01N21/27 ,  G01R31/28 ,  G01R31/308

Abstract: Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical models of semiconductor structures capable of accurate characterization of defects in high-K dielectric layers and embedded nanostructures are presented. In one example, the optical dispersion model includes a continuous Cody-Lorentz model having continuous first derivatives that is sensitive to a band gap of a layer of the unfinished, multi-layer semiconductor wafer. These models quickly and accurately represent experimental results in a physically meaningful manner. The model parameter values can be subsequently used to gain insight and control over a manufacturing process.

公开(公告)号：US10190868B2

公开(公告)日：2019-01-29

申请号：US14826079

申请日：2015-08-13

Applicant: KLA-Tencor Corporation

Inventor： Liequan Lee ,  Raphael Jean Michel Marie Getin ,  Meng Cao ,  Leonid Poslavsky ,  Torsten Rudolf Kaack ,  Hong Qiu

IPC: G01B11/02 ,  G06N5/02 ,  G03F7/20

Abstract: A metrology system, method, and computer program product that employ automatic transitioning between utilizing a library and utilizing regression for measurement processing are provided. In use, it is determined, by the metrology system, that a predetermined condition has been met. In response to determining that the predetermined condition has been met, the metrology system automatically transitions between utilizing a library and utilizing regression for measurement processing.

公开(公告)号：US10006865B1

公开(公告)日：2018-06-26

申请号：US15640961

申请日：2017-07-03

Applicant: KLA-Tencor Corporation

Inventor： Derrick Shaughnessy ,  Michael S. Bakeman ,  Guorong V. Zhuang ,  Andrei V. Shchegrov ,  Leonid Poslavsky

IPC: G01N21/55 ,  G01N21/67 ,  H01S3/0915 ,  G01N21/95

CPC classification number: G01N21/9501 ,  G01N2201/061 ,  G03F7/70616 ,  H01L22/12

Abstract: Methods and systems are described herein for producing high radiance illumination light for use in semiconductor metrology based on a confined, sustained plasma. One or more plasma confining circuits introduce an electric field, a magnetic field, or a combination thereof to spatially confine a sustained plasma. The confinement of the sustained plasma decreases the size of the induced plasma resulting in increased radiance. In addition, plasma confinement may be utilized to shape the plasma to improve light collection and imaging onto the specimen. The induced fields may be static or dynamic. In some embodiments, additional energy is coupled into the confined, sustained plasma to further increase radiance. In some embodiments, the pump energy source employed to sustained the plasma is modulated in combination with the plasma confining circuit to reduce plasma emission noise.

公开(公告)号：US09664734B2

公开(公告)日：2017-05-30

申请号：US15158883

申请日：2016-05-19

Applicant: KLA-Tencor Corporation

Inventor： Natalia Malkova ,  Leonid Poslavsky

IPC: G01B11/02 ,  G01B7/02 ,  G01N21/21 ,  G01N21/95 ,  H01L21/36 ,  H01L21/66 ,  G01R31/308 ,  G01N21/84

CPC classification number: G01R31/308 ,  G01N21/211 ,  G01N21/8422 ,  G01N21/9501 ,  G01N2021/213 ,  G01N2201/12 ,  G01R31/44 ,  H01L22/12 ,  H01L22/20

Abstract: Methods and systems for monitoring band structure characteristics and predicting electrical characteristics of a sample early in a semiconductor manufacturing process flow are presented herein. High throughput spectrometers generate spectral response data from semiconductor wafers. In one example, the measured optical dispersion is characterized by a Gaussian oscillator, continuous Cody-Lorentz model. The measurement results are used to monitor band structure characteristics, including band gap and defects such as charge trapping centers, exciton states, and phonon modes in high-K dielectric layers and embedded nanostructures. The Gaussian oscillator, continuous Cody-Lorentz model can be generalized to include any number of defect levels. In addition, the shapes of absorption defect peaks may be represented by Lorentz functions, Gaussian functions, or both. These models quickly and accurately represent experimental results in a physically meaningful manner. The model parameter values can be subsequently used to gain insight and control over a manufacturing process.

公开(公告)号：US09559019B2

公开(公告)日：2017-01-31

申请号：US14588055

申请日：2014-12-31

Applicant: KLA-Tencor Corporation

Inventor： Michael Adel ,  Leonid Poslavsky ,  John Fielden ,  John Madsen ,  Robert Peters

IPC: H01L21/66

CPC classification number: H01L22/12 ,  H01L22/20 ,  H01L22/30 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Metrology may be implemented during semiconductor device fabrication by a) modeling a first measurement on a first test cell formed in a layer of a partially fabricated device; b) performing a second measurement on a second test cell in the layer; c) feeding information from the second measurement into the modeling of the first measurement; and after a lithography pattern has been formed on the layer including the first and second test cells, d) modeling a third and a fourth measurement on the first and second test cells respectively using information from a) and b) respectively.

Abstract translation: 可以在半导体器件制造期间通过以下步骤来实现计量：a）对形成在部分制造的器件的层中的第一测试单元上的第一测量进行建模; b）对所述层中的第二测试单元执行第二测量; c）将第二测量中的信息馈送到第一测量的建模中; 并且在包括第一和第二测试单元的层上形成光刻图案之后，d）分别使用来自a）和b）的信息对第一和第二测试单元上的第三和第四测量进行建模。

公开(公告)号：US20160003609A1

公开(公告)日：2016-01-07

申请号：US14790793

申请日：2015-07-02

Applicant: KLA-Tencor Corporation

Inventor： Andrei V. Shchegrov ,  Thaddeus Gerard Dziura ,  Stilian Ivanov Pandev ,  Leonid Poslavsky

IPC: G01B11/14 ,  G01B11/06

CPC classification number: G03F7/7065 ,  G03F7/705 ,  H01L22/12

Abstract: Methods and systems for estimating values of parameters of interest of actual device structures based on optical measurements of nearby metrology targets are presented herein. High throughput, inline metrology techniques are employed to measure metrology targets located near actual device structures. Measurement data collected from the metrology targets is provided to a trained signal response metrology (SRM) model. The trained SRM model estimates the value of one or more parameters of interest of the actual device structure based on the measurements of the metrology target. The SRM model is trained to establish a functional relationship between actual device parameters measured by a reference metrology system and corresponding optical measurements of at least one nearby metrology target. In a further aspect, the trained SRM is employed to determine corrections of process parameters to bring measured device parameter values within specification.

Abstract translation: 本文介绍了基于邻近度量目标的光学测量来估计实际设备结构感兴趣参数值的方法和系统。 采用高吞吐量的在线测量技术来测量位于实际设备结构附近的测量目标。 从测量目标收集的测量数据提供给训练有素的信号响应计量（SRM）模型。 经过训练的SRM模型基于测量目标的测量值来估计实际设备结构的一个或多个感兴趣的参数的值。 训练SRM模型以建立由参考测量系统测量的实际设备参数与至少一个附近度量目标的对应光学测量之间的功能关系。 在另一方面，采用经过训练的SRM来确定过程参数的校正，以将测量的设备参数值置于规定范围内。

公开(公告)号：US08797534B2

公开(公告)日：2014-08-05

申请号：US14034869

申请日：2013-09-24

Applicant: KLA-Tencor Corporation

Inventor： Johannes D. de Veer ,  Leonid Poslavsky ,  G. Vera Zhuang ,  Shankar Krishnan

IPC: G01J4/00

CPC classification number: G01N21/21 ,  G01J3/504 ,  G01N21/274

Abstract: An apparatus to calibrate a polarizer in a polarized optical system at any angle of incidence. The apparatus decouples the polarization effect of the system from the polarization effect of the sample. The apparatus includes a substrate with a polarizer disposed on the surface. An indicator on the substrate indicates the polarization orientation of the polarizer, which is in a predetermined orientation with respect to the substrate.

Abstract translation: 一种在任何入射角度校准偏振光学系统中的偏振器的装置。 该装置将系统的极化效应与样品的极化效应分离。 该装置包括具有设置在表面上的偏振器的基板。 衬底上的指示器指示偏振器的偏振取向，其偏离相对于衬底的预定取向。

公开(公告)号：US08711349B2

公开(公告)日：2014-04-29

申请号：US13626023

申请日：2012-09-25

Applicant: KLA-Tencor Corporation

Inventor： Xiang Gao ,  Philip D. Flanner, III ,  Leonid Poslavsky ,  Zhiming Jiang ,  Jun-Jie Ye ,  Torsten Kaack ,  Qiang Zhao

IPC: G01N21/95

CPC classification number: G01N21/9501 ,  G01N21/211 ,  G01N21/8422 ,  G01N21/8851 ,  H01L22/12

Abstract: Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical dispersion metrics are determined based on the spectral data. Band structure characteristics such as band gap, band edge, and defects are determined based on optical dispersion metric values. In some embodiments a band structure characteristic is determined by curve fitting and interpolation of dispersion metric values. In some other embodiments, band structure characteristics are determined by regression of a selected dispersion model. In some examples, band structure characteristics indicative of band broadening of high-k dielectric films are also determined. The electrical performance of finished wafers is estimated based on the band structure characteristics identified early in the manufacturing process.

Abstract translation: 提出了基于光谱响应数据确定沉积在衬底上的高k电介质膜的带结构特性的方法和系统。 高产量光谱仪用于在制造过程早期快速测量半导体晶圆。 基于光谱数据确定光色散度量。 基于光学色散度量值来确定带隙，带边缘和缺陷之类的带结构特性。 在一些实施例中，通过曲线拟合和色散度量值的插值来确定带结构特征。 在一些其它实施例中，通过所选色散模型的回归来确定带结构特征。 在一些实例中，还确定了指示高k电介质膜的带宽变宽的带结构特性。 基于在制造过程早期确定的带结构特性来估计成品晶圆的电性能。

公开(公告)号：US20140043608A1

公开(公告)日：2014-02-13

申请号：US14034869

申请日：2013-09-24

Applicant: KLA-Tencor Corporation

Inventor： Johannes D. de Veer ,  Leonid Poslavsky ,  G. Vera Zhuang ,  Shankar Krishnan

IPC: G01N21/21

CPC classification number: G01N21/21 ,  G01J3/504 ,  G01N21/274

Abstract: An apparatus to calibrate a polarizer in a polarized optical system at any angle of incidence. The apparatus decouples the polarization effect of the system from the polarization effect of the sample. The apparatus includes a substrate with a polarizer disposed on the surface. An indicator on the substrate indicates the polarization orientation of the polarizer, which is in a predetermined orientation with respect to the substrate.

Abstract translation: 一种在任何入射角度校准偏振光学系统中的偏振器的装置。 该装置将系统的极化效应与样品的极化效应分离。 该装置包括具有设置在表面上的偏振器的基板。 衬底上的指示器指示偏振器的偏振取向，其偏离相对于衬底的预定取向。

公开(公告)号：US20130083320A1

公开(公告)日：2013-04-04

申请号：US13626023

申请日：2012-09-25

Applicant: KLA-TENCOR CORPORATION

Inventor： Xiang Gao ,  Philip D. Flanner, III ,  Leonid Poslavsky ,  Zhiming Jiang ,  Jun-Jie (Julien) Ye ,  Torsten Kaack ,  Qiang Zhao

IPC: G01N21/95

CPC classification number: G01N21/9501 ,  G01N21/211 ,  G01N21/8422 ,  G01N21/8851 ,  H01L22/12

Abstract: Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical dispersion metrics are determined based on the spectral data. Band structure characteristics such as band gap, band edge, and defects are determined based on optical dispersion metric values. In some embodiments a band structure characteristic is determined by curve fitting and interpolation of dispersion metric values. In some other embodiments, band structure characteristics are determined by regression of a selected dispersion model. In some examples, band structure characteristics indicative of band broadening of high-k dielectric films are also determined. The electrical performance of finished wafers is estimated based on the band structure characteristics identified early in the manufacturing process.

Abstract translation: 提出了基于光谱响应数据确定沉积在衬底上的高k电介质膜的带结构特性的方法和系统。 高产量光谱仪用于在制造过程早期快速测量半导体晶圆。 基于光谱数据确定光色散度量。 基于光学色散度量值来确定带隙，带边缘和缺陷之类的带结构特性。 在一些实施例中，通过曲线拟合和色散度量值的插值来确定带结构特征。 在一些其它实施例中，通过所选色散模型的回归来确定带结构特征。 在一些实例中，还确定了指示高k电介质膜的带宽变宽的带结构特性。 基于在制造过程早期确定的带结构特性来估计成品晶圆的电性能。