Abstract:
An imaging system utilizing atomic atoms is provided. The system may include a neutral atom source configured to generate a beam of neutral atoms. The system may also include an ionizer configured to collect neutral atoms scattered from the surface of a sample. The ionizer may also be configured to ionize the collected neutral atoms. The system may also include a selector configured to receive ions from the ionizer and selectively filter received ions. The system may also include one or more optical elements configured to direct selected ions to a detector. The detector may be configured to generate one or more images of the surface of the sample based on the received ions.
Abstract:
An inspection system including an optical system (optics) to direct light from an illumination source to a sample, and to direct light reflected/scattered from the sample to one or more image sensors. At least one image sensor of the system is formed on a semiconductor membrane including an epitaxial layer having opposing surfaces, with circuit elements formed on one surface of the epitaxial layer, and a pure boron layer and a doped layer on the other surface of the epitaxial layer. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor. The image sensor can be included in an electron-bombarded image sensor and/or in an inspection system.
Abstract:
A system for cleaning or suppressing contamination or oxidation in a EUV optical setting includes an illumination source, a detector, a first set of optical elements to direct light from the illumination source to a specimen and a second set of optical elements to receive illumination from the specimen and direct the illumination to the detector. The system also includes one or more vacuum chambers for containing the first and second set of optical elements and containing a selected purge gas ionizable by the light emitted by the illumination source. The first or second set of optical elements includes an electrically biased optical element having at least one electrically biased surface. The electrically biased optical element has a bias configuration suitable to attract one or more ionic species of the selected purge gas to the electrically biased surface in order to clean contaminants from the electrically biased surface.
Abstract:
An open plasma lamp includes a cavity section. A gas input and gas output of the cavity section are arranged to flow gas through the cavity section. The plasma lamp also includes a gas supply assembly fluidically coupled to the gas input of the cavity section and configured to supply gas to an internal volume of the cavity section. The plasma lamp also includes a nozzle assembly fluidically coupled to the gas output of the cavity section. The nozzle assembly and cavity section are arranged such that a volume of the gas receives pumping illumination from a pump source, where a sustained plasma emits broadband radiation. The nozzle assembly is configured to establish a convective gas flow from within the cavity section to a region external to the cavity section such that a portion of the sustained plasma is removed from the cavity section by the gas flow.
Abstract:
An optical component includes a substrate and a fluorine-doped thin film formed on the substrate. This fluorine-doped thin film is dense, and thus very low absorbing and insensitive to various vacuum, temperature, and humidity conditions. This dense film has a high refractive index, which remains stable irrespective of environmental conditions. The fluorine-doped thin film can advantageously ensure low scattering, low reflectance, and high transmittance. Moreover, the fluorine-doped thin film is damage resistant to incident radiation density. The fluorine-doped thin film may be a fluorine-doped silicon oxide film having a thickness of approximately 1-10 nm and a fluorine concentration of 0.1% to 5%.
Abstract:
A system for cleaning or suppressing contamination or oxidation in a EUV optical setting includes an illumination source, a detector, a first set of optical elements to direct light from the illumination source to a specimen and a second set of optical elements to receive illumination from the specimen and direct the illumination to the detector. The system also includes one or more vacuum chambers for containing the first and second set of optical elements and containing a selected purge gas ionizable by the light emitted by the illumination source. The first or second set of optical elements includes an electrically biased optical element having at least one electrically biased surface. The electrically biased optical element has a bias configuration suitable to attract one or more ionic species of the selected purge gas to the electrically biased surface in order to clean contaminants from the electrically biased surface.
Abstract:
A mirror for reflecting extreme ultraviolet light (EUV) comprising: a substrate layer; and an upper layer above the substrate layer, that reflects EUV wavelengths and refracts longer wavelengths, said upper layer being dense and hard carbon having an Sp2 to Sp3 carbon bond ratio of 0 to about 3 and a normal incidence EUV mirror comprising an optical coating on an uppermost surface which permits transmission of EUV and protects the surface from environmental degradation, said coating being dense and hard and having an Sp2 carbon bond ratio of 0 to about 3 and a thickness of 0.1 to about 5 nanometers. The invention also includes EUV mirror systems protected by a dense carbon layer and includes a multilayer EUV reflecting system having an out of band absorbing layer.
Abstract:
An optical component arranged for use in a low pressure environment including: a surface arranged to receive extreme ultra-violet (EUV) light and a coating, on the surface, arranged to block at least one contaminant in the low pressure environment from binding to the surface. A method of mitigating contamination of a surface of an optical component, including: inserting the optical component into a chamber for a semi-conductor inspection system, controlling a temperature and a pressure within the chamber, introducing a blocking material, in a gaseous state, into the chamber, coating a surface of the optical component with the blocking material, and preventing, using the coating, a contaminant in the chamber from binding to the optical component.
Abstract:
An apparatus for cross-flow purging for optical components in a chamber, including: a housing with first and second axial ends, a side wall extending in an axial direction and connecting the first and second axial ends, and the chamber formed by the first and second axial ends and the side wall; an optical component disposed within the chamber and fixed with respect to the housing via at least one connecting point on the optical component; an inlet port aligned with the side wall, between the first and second axial ends in the axial direction, in a radial direction orthogonal to the axial direction and arranged to inject a purge gas into the chamber and across the optical component in a radial direction orthogonal to the axial direction; and an exhaust port aligned with the side wall in the radial direction and arranged to exhaust the purge gas from the chamber.
Abstract:
An apparatus for actinic extreme ultra-violet (EUV) reticle inspection including at least one shape memory metal actuator adapted to displace an inspection component in an EUV inspection tool. An apparatus for actinic EUV reticle inspection including a tilt mechanism including at least one shape memory metal actuator adapted to angularly displace an inspection component in an EUV inspection tool. An apparatus for actinic EUV reticle inspection, including a translation stage adapted to fixedly connect to an inspection component, at least one flexure stage, and at least one shape memory metal actuator adapted to displace the translation stage.