Dynamically adjustable semiconductor metrology system
    1.
    发明授权
    Dynamically adjustable semiconductor metrology system 有权
    动态可调半导体计量系统

    公开(公告)号:US09228943B2

    公开(公告)日:2016-01-05

    申请号:US13661752

    申请日:2012-10-26

    CPC classification number: G01N21/55 G01N21/211 G01N2021/213 G01N2021/556

    Abstract: The present invention may include an illumination source, a detector, a selectably adjustable optical system including a dynamically adjustable illumination pupil of the illumination arm, a dynamically adjustable collection pupil of the collection arm, a dynamically adjustable illumination field stop of the illumination arm, a dynamically adjustable collection field stop of the collection arm, a sensor configured to measure one or more optical characteristics of one or more components of the optical system, and a control system configured to selectably dynamically adjust at least one of the illumination pupil, the collection pupil, the illumination field stop, the collection field stop, and a spectral radiance of the illumination source.

    Abstract translation: 本发明可以包括照明源,检测器,可选择地调节的光学系统,其包括照明臂的动态可调节照明光瞳,收集臂的动态可调收集光瞳,照明臂的动态可调照明场停止, 收集臂的可动态调整的收集场停止,被配置为测量所述光学系统的一个或多个部件的一个或多个光学特性的传感器,以及被配置为可选择地动态地调整所述照明瞳孔,所述收集瞳孔 照明场停止,收集场停止以及照明源的光谱。

    CARBON AS GRAZING INCIDENCE EUV MIRROR AND SPECTRAL PURITY FILTER
    2.
    发明申请
    CARBON AS GRAZING INCIDENCE EUV MIRROR AND SPECTRAL PURITY FILTER 审中-公开
    碳化物作为激光发射EUV镜像和光谱滤光片

    公开(公告)号:US20140168758A1

    公开(公告)日:2014-06-19

    申请号:US13839570

    申请日:2013-03-15

    CPC classification number: G02B5/0891 G21K1/062 G21K1/067

    Abstract: A mirror for reflecting extreme ultraviolet light (EUV) comprising: a substrate layer; and an upper layer above the substrate layer, that reflects EUV wavelengths and refracts longer wavelengths, said upper layer being dense and hard carbon having an Sp2 to Sp3 carbon bond ratio of 0 to about 3 and a normal incidence EUV mirror comprising an optical coating on an uppermost surface which permits transmission of EUV and protects the surface from environmental degradation, said coating being dense and hard and having an Sp2 carbon bond ratio of 0 to about 3 and a thickness of 0.1 to about 5 nanometers. The invention also includes EUV mirror systems protected by a dense carbon layer and includes a multilayer EUV reflecting system having an out of band absorbing layer.

    Abstract translation: 一种用于反射极紫外光(EUV)的反射镜,包括:基底层; 以及反射EUV波长并折射较长波长的上层,所述上层是具有0至约3的Sp2至Sp3碳键比的致密和硬碳,以及包含光学涂层的法向入射EUV镜 允许EUV传播并保护表面免受环境恶化的最上表面,所述涂层致密且硬,并且具有0至约3的Sp 2碳键比和0.1至约5纳米的厚度。 本发明还包括由致密碳层保护的EUV反射镜系统,并且包括具有带外吸收层的多层EUV反射系统。

    Dynamically Adjustable Semiconductor Metrology System
    3.
    发明申请
    Dynamically Adjustable Semiconductor Metrology System 有权
    动态可调半导体计量系统

    公开(公告)号:US20130114085A1

    公开(公告)日:2013-05-09

    申请号:US13661752

    申请日:2012-10-26

    CPC classification number: G01N21/55 G01N21/211 G01N2021/213 G01N2021/556

    Abstract: The present invention may include an illumination source, a detector, a selectably adjustable optical system including a dynamically adjustable illumination pupil of the illumination arm, a dynamically adjustable collection pupil of the collection arm, a dynamically adjustable illumination field stop of the illumination arm, a dynamically adjustable collection field stop of the collection arm, a sensor configured to measure one or more optical characteristics of one or more components of the optical system, and a control system configured to selectably dynamically adjust at least one of the illumination pupil, the collection pupil, the illumination field stop, the collection field stop, and a spectral radiance of the illumination source.

    Abstract translation: 本发明可以包括照明源,检测器,可选择地调节的光学系统,其包括照明臂的动态可调节照明光瞳,收集臂的动态可调收集光瞳,照明臂的动态可调照明场停止, 收集臂的可动态调整的收集场停止,被配置为测量所述光学系统的一个或多个部件的一个或多个光学特性的传感器,以及被配置为可选择地动态地调整所述照明瞳孔,所述收集瞳孔 照明场停止,收集场停止以及照明源的光谱。

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