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公开(公告)号：US20170300419A1
公开(公告)日：2017-10-19
申请号：US15638582
申请日：2017-06-30
Applicant: HUAWEI TECHNOLOGIES CO.,LTD. , Fudan University
Inventor： RenHua Yang , Junfeng Zhao , Wei Yang , Yuangang Wang , Yinyin Lin
IPC: G06F12/08 , G11C11/406 , G06F12/10 , G06F12/02 , G06F11/14
CPC classification number: G06F12/0868 , G06F11/14 , G06F12/0246 , G06F12/0802 , G06F12/109 , G06F13/28 , G11C11/40615 , G11C11/40622 , Y02D10/13 , Y02D10/14 , Y02D10/151
Abstract: A memory access method, a storage-class memory, and a computer system are provided. The computer system includes a memory controller and a hybrid memory, and the hybrid memory includes a dynamic random access memory (DRAM) and a storage-class memory (SCM). The memory controller sends a first access instruction to the DRAM and the SCM. When determining that a first memory cell set that is of the DRAM and to which a first address in the received first access instruction points includes a memory cell whose retention time is shorter than a refresh cycle of the DRAM, the SCM may obtain a second address having a mapping relationship with the first address. Further, the SCM converts, according to the second address, the first access instruction into a second access instruction for accessing the SCM, to implement access to the SCM.
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公开(公告)号：US09741418B2
公开(公告)日：2017-08-22
申请号：US15333235
申请日：2016-10-25
Applicant: Huawei Technologies Co., Ltd.
Inventor： Yarong Fu , Junfeng Zhao , Yuangang Wang , Wei Yang , Yinyin Lin , Kai Yang
CPC classification number: G11C11/1675 , G11B5/012 , G11B5/653 , G11B5/656 , G11C11/16 , G11C19/0841
Abstract: A write apparatus and a magnetic memory, where the write apparatus includes a first drive port, a second drive port, a first information storage area, a second information storage area, and an information buffer. A first area locates between the first information storage area and the information buffer. A second area locates between the second information storage area and the information buffer. The first information storage area, the second information storage area, and the information buffer are made of a first magnetic material. The first area and the second area are made of a second magnetic material. Magnetic energy of the first magnetic material is higher than magnetic energy of the second magnetic material. The write apparatus can ensure write stability of the magnetic memory.
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公开(公告)号：US20170133074A1
公开(公告)日：2017-05-11
申请号：US15406209
申请日：2017-01-13
Applicant: Huawei Technologies Co., Ltd.
Inventor： Kai Yang , Junfeng Zhao , Yuangang Wang , Wei Yang , Yinyin Lin , Yarong Fu
IPC: G11C11/16
CPC classification number: G11C11/1675 , G11C11/161 , G11C11/1673 , G11C11/5607 , G11C19/0808 , G11C19/0841 , G11C19/0866
Abstract: A magnetic storage apparatus is disclosed, and is configured to access data. The magnetic storage apparatus includes a magnetic storage track, a first write apparatus, a second write apparatus, and a drive apparatus. The first write apparatus and the second write apparatus are located at different positions on the magnetic storage track. The first write apparatus is configured to write first data “0” or second data “1”. The second write apparatus is configured to write third data “2” and fourth data “3”.
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公开(公告)号：US20160203835A1
公开(公告)日：2016-07-14
申请号：US15078594
申请日：2016-03-23
Applicant: Huawei Technologies Co., Ltd.
Inventor： Yinyin Lin , Yarong Fu , Kai Yang , Wei Yang , Yuangang Wang , Junfeng Zhao
IPC: G11B5/09
CPC classification number: G11B5/09 , G11B5/02 , G11B2005/0002 , G11C11/02 , G11C11/15 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/5607 , G11C19/0808 , G11C19/0841
Abstract: An information storage apparatus includes a magnetic track, a writer, and a reader, where the magnetic track includes a number of magnetic domains. Each magnetic domain is divided into at least two magnetic regions, and the writer is disposed on the magnetic track, and configured to write information to the at least two magnetic regions of each magnetic domain. The reader, disposed on the magnetic track, is configured to read the written information from the at least two magnetic regions. Therefore, multiple pieces of valid information are written to one magnetic domain of the magnetic track, thereby increasing storage density of the magnetic track, and expanding a storage capacity of the storage apparatus.
Abstract translation: 信息存储装置包括磁道，写入器和读取器，其中磁道包括多个磁畴。 每个磁畴被分成至少两个磁性区域，并且写入器设置在磁道上，并被配置为将信息写入每个磁畴的至少两个磁性区域。 设置在磁道上的读取器被配置为从至少两个磁性区域读取写入的信息。 因此，将多条有效信息写入磁道的一个磁畴，从而增加磁道的存储密度，并扩大存储装置的存储容量。
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公开(公告)号：US20220208182A1
公开(公告)日：2022-06-30
申请号：US17607657
申请日：2020-04-22
Applicant: Huawei Technologies Co., Ltd.
Inventor： Qing Zhang , Wei Yang , Lianghe Zhang , Yibo Zhang
Abstract: A semantic parsing method includes extracting, by a first server, a first entity of a first slot from a first user sentence, modifying the first entity to a second entity of a second slot when the first entity is a pronoun, sending a first server request to a second server, and obtaining a first service result from the second server in response to the first service request. The first service request includes indication information of a first intention and the first entity, the second server is an application server that provides a first skill, and the first service result is based on the first intention and the first entity. The first server returns the first service result to a device to output by the device.
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Patent Agency Ranking
公开(公告)号：US20220188037A1
公开(公告)日：2022-06-16
申请号：US17559478
申请日：2021-12-22
Applicant: Huawei Technologies Co., Ltd.
Inventor： Florian Longnos , Feng Yang , Wei Yang
Abstract: An information writing method is applied to an non-volatile dual in-line memory module (NVDIMM), the NVDIMM includes an NVDIMM controller and a non-volatile memory (NVM), and the method includes receiving, by the NVDIMM controller, a sanitize command from a host, where the sanitize command is used to instruct the NVDIMM controller to sanitize data in the NVM using a first write pattern, and the first write pattern is one of at least two patterns of writing information into the NVM, and writing, by the NVDIMM controller, information into the NVM according to the sanitize command.
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公开(公告)号：US11210020B2
公开(公告)日：2021-12-28
申请号：US16414383
申请日：2019-05-16
Applicant: Huawei Technologies Co., Ltd.
Inventor： Shihai Xioa , Qiaosha Zou , Wei Yang
IPC: G06F3/06 , G06F12/0891 , G06F12/0888 , G06F12/08 , G06F12/0879 , G06F12/0895
Abstract: A memory access technology applied to a computer system includes a first-level memory, a second-level memory, and a memory controller. The first-level memory is configured to cache data in the second-level memory. A plurality of access requests for accessing different memory blocks has a mapping relationship with a first cache line in the first-level memory, and the memory controller compares tags of the plurality of access requests with a tag of the first cache line in a centralized manner to determine whether the plurality of access requests hit the first-level memory.
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公开(公告)号：US20200257620A1
公开(公告)日：2020-08-13
申请号：US16863440
申请日：2020-04-30
Applicant: Huawei Technologies Co., Ltd.
Inventor： Florian Longnos , Wei Yang
Abstract: A memory block reclamation method and apparatus are provided. According to the method, after receiving an unmap command sent by a memory controller, a medium controller reclaims one or more memory blocks in a non-volatile memory connected to the medium controller based on memory logical address information in the unmap command. The one or more reclaimed memory blocks are available memory blocks.
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公开(公告)号：US20180321942A1
公开(公告)日：2018-11-08
申请号：US16037767
申请日：2018-07-17
Inventor： Hao Yu , Yuhao Wang , Junfeng Zhao , Wei Yang , Shihai Xiao , Leibin Ni
CPC classification number: G06F9/30036 , G06F7/00 , G06F9/3001 , G06F9/30025 , G06F13/00 , G06F17/16 , G06J1/00 , G06N3/0635 , G11C5/02 , G11C7/1006 , G11C13/0023 , G11C13/003 , G11C13/004 , G11C2213/71 , G11C2213/77
Abstract: Embodiments of the present disclosure provide a memory device. The memory device includes an RRAM crossbar array that is configured to perform a logic operation, and resistance values of resistors in the RRAM crossbar array are all set to Ron or Roff to indicate a value 1 or 0. Based on the foregoing setting, an operation is implemented using the RRAM crossbar array, so that reliability of a logic operation of the RRAM crossbar array can be improved.
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公开(公告)号：US09740418B2
公开(公告)日：2017-08-22
申请号：US15133897
申请日：2016-04-20
Applicant: Huawei Technologies Co., Ltd.
Inventor： Yinyin Lin , Zhulin Wei , Junfeng Zhao , Wei Yang , Yarong Fu , Kai Yang
CPC classification number: G06F3/0625 , G06F3/0658 , G06F3/0676 , G11C8/16 , G11C11/161 , G11C11/1675 , G11C19/0808 , G11C19/0841
Abstract: A storage unit includes a U-shaped magnetic track, a first drive circuit, a second drive circuit, a first drive port, and a second drive port. The U-shaped magnetic track includes a first port, a second port, a first storage area, and a second storage area. By controlling input voltages of the first port, the second port, the first drive port, and the second drive port and driving the first drive circuit, a current pulse is generated in the first storage area, and a magnetic domain wall in the first storage area is driven to move. By controlling the input voltages of the first port, the second port, the first drive port, and the second drive port and driving the second drive circuit, a current pulse is generated in the second storage area, and a magnetic domain in the second storage area is driven to move.
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