公开(公告)号：US20050052795A1

公开(公告)日：2005-03-10

申请号：US10968983

申请日：2004-10-21

Applicant: Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Yuzo Kamiguchi ,  Hiromi Yuasa

Inventor： Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Yuzo Kamiguchi ,  Hiromi Yuasa

IPC: G11B5/39 ,  G11B5/33 ,  G11B5/127

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/1278 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3954 ,  G11B2005/0029 ,  G11B2005/3996

Abstract: A magnetoresistive head has a magnetoresistive film including first and second magnetization free layers, an intermediate layer sandwiched between the first and second magnetization free layers, an underlayer and a protective layer, which are stacked in the order of the underlayer, the first magnetization free layer, the intermediate layer, the second magnetization free layer and the protective layer and arranged to be substantially perpendicular to the air-bearing surface, and a first electrode connected with the underlayer and a second electrode connected with the protective layer, the electrodes allowing a current to flow in a direction substantially perpendicular to the plane. Each magnetization direction of the first and second magnetization free layers is allowed to vary independently in response to a signal magnetic flux from a medium. The first and second magnetization free layers produce a magnetoresistance effect in accordance with the magnetization directions thereof.

公开(公告)号：US20050052788A1

公开(公告)日：2005-03-10

申请号：US10970278

申请日：2004-10-22

Applicant: Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda

Inventor： Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda

IPC: G01R33/09 ,  G11B5/39 ,  G11C11/15 ,  H01F10/32 ,  H01L43/08 ,  G11B5/33 ,  G11B5/127

CPC classification number: B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B2005/3996 ,  G11C11/15

Abstract: There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, if a pinned layer and a free layer have a stacked construction of a magnetic layer and a non-magnetic layer or a stacked construction of a magnetic layer and a magnetic layer, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.

Abstract translation: 提供了一种具有适当的电阻值的实用磁阻效应元件，其可以被敏化并且具有少量的要控制的磁性层，以及使用该电阻的磁头和磁记录和/或再现系统。 在其中使感应电流在垂直于膜的平面的方向上流动的磁阻效应元件中，如果被钉扎层和自由层具有磁性层和非磁性层的层叠结构或堆叠结构 的磁性层和磁性层，可以提供具有适当的电阻值的实用的磁阻效应元件，其可以被敏化并且具有少量的磁性层，同时有效地利用依赖于旋转的散射效应 。

公开(公告)号：US20050047026A1

公开(公告)日：2005-03-03

申请号：US10967262

申请日：2004-10-19

Applicant: Hiromi Yuasa ,  Hiroaki Yoda ,  Yuzo Kamiguchi ,  Tomohiko Nagata

Inventor： Hiromi Yuasa ,  Hiroaki Yoda ,  Yuzo Kamiguchi ,  Tomohiko Nagata

IPC: G01R33/09 ,  G11B5/00 ,  G11B5/39 ,  H01F10/32 ,  H01L43/08 ,  G11B5/33 ,  G11B5/127

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/3912 ,  G11B5/3919 ,  G11B5/3922 ,  G11B5/3929 ,  G11B5/398 ,  H01F10/324 ,  H01L43/08

Abstract: There is provided a magnetoresistance effect element capable of precisely defining the active region in a CPP type MR element and of effectively suppressing and eliminating the influence of a magnetic field due to current from an electrode, and a magnetic head and magnetic reproducing system using the same. The active region of the MR element is defined by the area of a portion through which a sense current flows. Moreover, the shape of the cross section of a pillar electrode or pillar non-magnetic material for defining the active region of the element is designed to extend along the flow of a magnetic flux so as to efficiently read only a signal from a track directly below the active region. When the magnetic field due to current from the pillar electrode can not be ignored, the magnetic flux from a recording medium asymmetrically enters yokes and the magnetization free layer of the MR element to some extent. In expectation of this, if the cross section of the pillar electrode is designed to be asymmetric so as to extend along the flow of the magnetic flux, the regenerative efficiency is improved.

公开(公告)号：US06754053B2

公开(公告)日：2004-06-22

申请号：US10108472

申请日：2002-03-29

Applicant: Masatoshi Yoshikawa ,  Masashi Sahashi ,  Katsuhiko Koi ,  Hitoshi Iwasaki ,  Hiromi Yuasa ,  Hideaki Fukuzawa

Inventor： Masatoshi Yoshikawa ,  Masashi Sahashi ,  Katsuhiko Koi ,  Hitoshi Iwasaki ,  Hiromi Yuasa ,  Hideaki Fukuzawa

IPC: G11B5127

CPC classification number: H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3143 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3254 ,  H01F41/325

Abstract: A magnetoresistance effect film including a magnetically pinned layer, a non-magnetic intermediate layer and a magnetically free layer has sidewall layers covering at least side surfaces of the magnetically pinned layer and the non-magnetic intermediate layer. The sidewall layers are made of a high-resistance oxide, nitride, fluoride, boride, sulfide or carbide having a specular reflection effect against conduction electrons, thereby to prevent non-elastic scattering of electrons and missing of spin information on side surfaces of the magnetoresistance effect film.

Abstract translation: 包括磁性钉扎层，非磁性中间层和无磁性层的磁阻效应膜具有覆盖磁性被钉扎层和非磁性中间层的至少侧面的侧壁层。 侧壁层由具有对传导电子的镜面反射效应的高电阻氧化物，氮化物，氟化物，硼化物，硫化物或碳化物制成，从而防止电子的非弹性散射和在磁阻的侧表面上缺少自旋信息 效果片。

公开(公告)号：US06348274B1

公开(公告)日：2002-02-19

申请号：US09472144

申请日：1999-12-27

Applicant: Yuzo Kamiguchi ,  Hiromi Yuasa ,  Masashi Sahashi ,  Hitoshi Iwasaki

Inventor： Yuzo Kamiguchi ,  Hiromi Yuasa ,  Masashi Sahashi ,  Hitoshi Iwasaki

IPC: G11B566

CPC classification number: H01F10/3263 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/66 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F41/325 ,  Y10S428/90 ,  Y10T428/1107 ,  Y10T428/1171

Abstract: A magnetoresistive element includes a pinned layer, free layer and non-magnetic spacer film between them. The pinned layer is made up of a first ferromagnetic metal layer, first non-metal layer on the first ferromagnetic metal layer, second non-metal layer on the first non-metal layer and different in composition from the first non-metal layer, and second ferromagnetic metal layer on the second non-metal layer. Thus, the magnetoresistive element, which may be used in a magnetic head of a magnetic recording apparatus, ensures a good bias property of the pinned film while maintaining a large MR changing rate of a specular spin valve structure, and it is simultaneously improved in soft magnetic property.

Abstract translation: 磁阻元件包括它们之间的钉扎层，自由层和非磁性间隔膜。 被钉扎层由第一强磁性金属层，第一铁磁金属层上的第一非金属层，第一非金属层上的第二非金属层和第一非金属层的组成不同而构成，以及 第二非铁金属层上的第二铁磁金属层。 因此，可以用于磁记录装置的磁头中的磁阻元件确保了被钉扎膜的良好的偏置特性，同时保持了镜面自旋阀结构的大的MR变化率，同时在软的 磁性。

公开(公告)号：US09032808B2

公开(公告)日：2015-05-19

申请号：US13246069

申请日：2011-09-27

Applicant: Devin Giddings ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Michiko Hara ,  Hiromi Yuasa

Inventor： Devin Giddings ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Michiko Hara ,  Hiromi Yuasa

IPC: G01L1/22 ,  G11B5/127 ,  G11B5/39 ,  G01R33/09 ,  H01L43/08 ,  H01F10/30 ,  A61B5/021 ,  A61B5/022 ,  H01F10/32

CPC classification number: G01R33/091 ,  A61B5/02108 ,  A61B5/022 ,  A61B2562/0247 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/399 ,  G11B2005/3996 ,  H01F10/30 ,  H01F10/325 ,  H01F10/3254 ,  H01F10/3259 ,  H01L43/08

Abstract: According to one embodiment, a magneto-resistive effect device, includes a stacked body stacked on a substrate, a pair of first electrodes that feeds current to the stacked body, a strain introduction member, and a second electrode for applying a voltage to the strain introduction member. The stacked body includes a first magnetic layer that includes one or more metals selected from the group consisting of iron, cobalt, and nickel, a second magnetic layer stacked on the first magnetic layer, having a composition that is different from the first magnetic layer, and a spacer layer disposed between the first magnetic layer and the second magnetic layer.

Abstract translation: 根据一个实施例，磁阻效应装置包括堆叠在基板上的堆叠体，将一个电流馈送到堆叠体的一对第一电极，应变引入部件和用于向该应变施加电压的第二电极 介绍会员。 层叠体包括：第一磁性层，其包含选自铁，钴和镍的一种或多种金属，堆叠在第一磁性层上的具有与第一磁性层不同的组成的第二磁性层， 以及设置在第一磁性层和第二磁性层之间的间隔层。

公开(公告)号：US08671554B2

公开(公告)日：2014-03-18

申请号：US13419198

申请日：2012-03-13

Applicant: Hideaki Fukuzawa ,  Hiromi Yuasa ,  Yoshihiko Fuji

Inventor： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Yoshihiko Fuji

IPC: G11B5/17 ,  H04R31/00

CPC classification number: B25G1/102

Abstract: An example method for manufacturing a magneto-resistance effect element having a magnetic layer, a free magnetization layer, and a spacer layer includes forming a first metallic layer and forming, on the first metallic layer, a second metallic layer. A first conversion treatment is performed to convert the second metallic layer into a first insulating layer and to form a first metallic portion penetrating through the first insulating layer. A third metallic layer is formed on the first insulating layer and the first metallic portion. A second conversion treatment is performed to convert the third metallic layer into a second insulating layer and to form a second metallic portion penetrating through the second insulating layer.

Abstract translation: 用于制造具有磁性层，自由磁化层和间隔层的磁阻效应元件的示例性方法包括形成第一金属层，并在第一金属层上形成第二金属层。 执行第一转换处理以将第二金属层转换成第一绝缘层并形成贯穿第一绝缘层的第一金属部分。 在第一绝缘层和第一金属部分上形成第三金属层。 执行第二转换处理以将第三金属层转换成第二绝缘层并形成贯穿第二绝缘层的第二金属部分。

公开(公告)号：US20130242435A1

公开(公告)日：2013-09-19

申请号：US13728281

申请日：2012-12-27

Applicant: Yoshihiko FUJI ,  Michiko Hara ,  Hideaki Fukuzawa ,  Hiromi Yuasa

Inventor： Yoshihiko FUJI ,  Michiko Hara ,  Hideaki Fukuzawa ,  Hiromi Yuasa

IPC: G11B5/127 ,  H01L43/10

CPC classification number: G11B5/1274 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3983 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

Abstract: According to one embodiment, a magneto-resistance effect element includes: a first electrode; a second electrode; a first magnetic layer provided between the first and the second electrodes; a second magnetic layer provided between the first magnetic layer and the second electrode; and an oxide layer of a metal oxide provided between the first magnetic layer and the second magnetic layer. The oxide layer includes wustite crystal grains of a wustite structure with a (1 1 1) plane orientation containing iron. A lattice spacing of a (1 1 1) plane of the wustite crystal grains is not less than 0.253 nanometers and not more than 0.275 nanometers.

Abstract translation: 根据一个实施例，磁阻效应元件包括：第一电极; 第二电极; 设置在第一和第二电极之间的第一磁性层; 设置在所述第一磁性层和所述第二电极之间的第二磁性层; 以及设置在第一磁性层和第二磁性层之间的金属氧化物的氧化物层。 氧化物层包括具有含（111）面取向的方铁矿结构的方铁矿晶粒含铁。 方铁矿晶粒的（111）面的晶格间距不小于0.253纳米，不大于0.275纳米。

公开(公告)号：US20120308728A1

公开(公告)日：2012-12-06

申请号：US13584293

申请日：2012-08-13

Applicant: Hideaki FUKUZAWA ,  Shuichi Murakami ,  Hiromi Yuasa ,  Yoshihiko Fuji

Inventor： Hideaki FUKUZAWA ,  Shuichi Murakami ,  Hiromi Yuasa ,  Yoshihiko Fuji

IPC: B05D1/38

CPC classification number: H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/04 ,  G01R33/093 ,  G11B5/3906 ,  G11B2005/3996 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetoresistive element includes a magnetoresistive film including a magnetization pinned layer, a magnetization free layer, an intermediate layer arranged between the magnetization pinned layer and the magnetization free layer, a cap layer arranged on the magnetization pinned layer or on the magnetization free layer, and a functional layer arranged in the magnetization pinned layer, in the magnetization free layer, in the interface between the magnetization pinned layer and the intermediate layer, in the interface between the intermediate layer and the magnetization free layer, or in the interface between the magnetization pinned layer or the magnetization free layer and the cap layer, and a pair of electrodes which pass a current perpendicularly to a plane of the magnetoresistive film, in which the functional layer is formed of a layer including nitrogen and a metal material containing 5 atomic % or more of Fe.

Abstract translation: 磁阻元件包括磁阻膜，其包括磁化被钉扎层，磁化自由层，布置在磁化钉扎层和磁化自由层之间的中间层，布置在磁化钉扎层或磁化自由层上的盖层，以及 功能层，布置在磁化固定层中，在磁化自由层中，在磁化被钉扎层和中间层之间的界面中，在中间层和磁化自由层之间的界面中，或者在磁化固定 层或磁化自由层和盖层，以及一对电极，其垂直于磁阻膜的平面通过电流，其中功能层由包含氮的层和含有5原子％的金属材料形成，或 更多的铁。

公开(公告)号：US20120206838A1

公开(公告)日：2012-08-16

申请号：US13454846

申请日：2012-04-24

Applicant: Yoshihiko FUJI ,  Hideaki FUKUZAWA ,  Hiromi YUASA

Inventor： Yoshihiko FUJI ,  Hideaki FUKUZAWA ,  Hiromi YUASA

IPC: G11B5/39 ,  G11C11/16

CPC classification number: G11B5/3983 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/398 ,  G11C11/161 ,  H01F10/187 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3263 ,  H01F10/3272 ,  Y10T428/1121

Abstract: An example magnetoresistive element includes a first magnetic layer whose magnetization direction is substantially pinned toward one direction; a second magnetic layer whose magnetization direction is changed in response to an external magnetic field; and a spacer layer. At least one of the first magnetic layer and the second magnetic layer includes a magnetic compound layer including a magnetic compound that is expressed by M1aM2bOc (where 5≦a≦68, 10≦b≦73, and 22≦c≦85). M1 is at least one element selected from the group consisting of Co, Fe, and Ni. M2 is at least one element selected from the group consisting of Ti, V, and Cr.

Abstract translation: 示例性磁阻元件包括其磁化方向基本上朝向一个方向固定的第一磁性层; 其磁化方向响应于外部磁场而改变的第二磁性层; 和间隔层。 第一磁性层和第二磁性层中的至少一个包括由M1aM2bOc（其中5和nlE; a＆nlE; 68,10和nlE; b＆nlE; 73和22＆nlE; c＆nlE; 85）表示的磁性化合物的磁性化合物层。 M1是选自Co，Fe和Ni中的至少一种元素。 M2是选自Ti，V和Cr中的至少一种元素。