公开(公告)号：US11164715B2

公开(公告)日：2021-11-02

申请号：US17021724

申请日：2020-09-15

Applicant: Carl Zeiss MultiSEM GmbH

Inventor： Dirk Zeidler ,  Stefan Schubert ,  Ingo Mueller ,  Joerg Jacobi ,  Mario Muetzel ,  Antonio Casares ,  Christof Riedesel

IPC: H01J37/14 ,  H01J37/05 ,  H01J37/147 ,  H01J37/21 ,  H01J37/244 ,  H01J37/28 ,  H01J37/06

Abstract: A charged particle beam system includes a charged particle source that generates a first charged particle beam and a multi beam generator that generates a plurality of charged particle beamlets from an incoming first charged particle beam. Each individual beamlet is spatially separated from other beamlets. The charged particle beam system also includes an objective lens that focuses incoming charged particle beamlets in a first plane so that a first region in which a first individual beamlet impinges in the first plane is spatially separated from a second region in which a second individual beamlet impinges in the first plane. The charged particle beam system also includes a projection system and a detector system including a plurality of individual detectors. The projection system images interaction products leaving the first region within the first plane due to impinging charged particles onto a first detector and images interaction products leaving the second region in the first plane onto a second detector.

公开(公告)号：US11158482B2

公开(公告)日：2021-10-26

申请号：US16993392

申请日：2020-08-14

Applicant: Carl Zeiss MultiSEM GmbH

Inventor： Dirk Zeidler ,  Stefan Schubert

IPC: H01J37/09 ,  H01J37/05 ,  H01J37/10 ,  H01J37/244 ,  H01J37/28

Abstract: A multi-beam particle microscope includes a multi-beam particle source, an objective lens, a detector arrangement, and a multi-aperture plate with a multiplicity of openings. The multi-aperture plate is between the objective lens and the object plane. The multi-aperture plate includes a multiplicity of converters which convert backscattered electrons which are generated by primary particle beams at an object into electrons with a lower energy, which provide electrons that form electron beams detected by the detector arrangement.

公开(公告)号：US20210296075A1

公开(公告)日：2021-09-23

申请号：US17338933

申请日：2021-06-04

Applicant: mi2-factory GmbH

Inventor： Florian KRIPPENDORF ,  Constantin CSATO

IPC: H01J37/05 ,  C23C14/18 ,  C23C14/48 ,  H01J37/147 ,  H01J37/20 ,  H01J37/317 ,  H01L21/04 ,  H01L29/32

Abstract: A method comprising the irradiation of a wafer by an ion beam that passes through an implantation filter. The wafer is heated to a temperature of more than 200° C. The wafer is a semiconductor wafer including SiC, and the ion beam includes aluminum ions.

公开(公告)号：US11017974B2

公开(公告)日：2021-05-25

申请号：US15795586

申请日：2017-10-27

Applicant: Nissin Ion Equipment Co., Ltd.

Inventor： Sami K. Hahto ,  George Sacco

IPC: H01J37/08 ,  H01J37/317 ,  H01J27/02 ,  H01J37/05

Abstract: An ion source is provided that includes a gas source for supplying a gas, and an ionization chamber defining a longitudinal axis extending therethrough and including an exit aperture along a side wall of the ionization chamber. The ion source also includes one or more extraction electrodes at the exit aperture of the ionization chamber for extracting ions from the ionization chamber in the form of an ion beam. At least one of the extraction electrodes comprises a set of discrete rods forming a plurality of slits in the at least one extraction electrode for enabling at least one of increasing a current of the ion beam or controlling an angle of extraction of the ion beam from the ionization chamber. Each rod in the set of discrete rods is parallel to the longitudinal axis of the ionization chamber.

公开(公告)号：US11011343B2

公开(公告)日：2021-05-18

申请号：US16542731

申请日：2019-08-16

Applicant: APPLIED Materials, Inc.

Inventor： Alexandre Likhanskii ,  Shengwu Chang ,  Frank Sinclair ,  Antonella Cucchetti ,  Eric D Hermanson ,  Christopher Campbell

IPC: H01J37/12 ,  H01J37/317 ,  H01J37/05

Abstract: Provided herein are approaches for increasing operational range of an electrostatic lens. An electrostatic lens of an ion implantation system may receive an ion beam from an ion source, the electrostatic lens including a first plurality of conductive beam optics disposed along one side of an ion beam line and a second plurality of conductive beam optics disposed along a second side of the ion beam line. The ion implantation system may further include a power supply in communication with the electrostatic lens, the power supply operable to supply a voltage and a current to at least one of the first and second plurality of conductive beam optics, wherein the voltage and the current deflects the ion beam at a beam deflection angle, and wherein the ion beam is accelerated and then decelerated within the electrostatic lens.

公开(公告)号：US11004648B2

公开(公告)日：2021-05-11

申请号：US16290325

申请日：2019-03-01

Applicant: Applied Materials, Inc.

Inventor： Morgan Evans ,  Rutger Meyer Timmerman Thijssen

IPC: H01J37/05 ,  H01J37/317 ,  H01J37/147

Abstract: Embodiments herein provide systems and methods for multi-area selecting etching. In some embodiments, a system may include a plasma source delivering a plurality of angled ion beams to a substrate, the substrate including a plurality of devices. Each of the plurality of devices may include a first angled grating and a second angled grating. The system may further include a plurality of blocking masks positionable between the plasma source and the substrate. A first blocking mask of the plurality of blocking masks may include a first set of openings permitting the angled ion beams to pass therethrough to form the first angled gratings of each of the plurality of devices. A second blocking mask of the plurality of blocking masks may include a second set of openings permitting the angled ion beams to pass therethrough to form the second angled gratings of each of the plurality of devices.

公开(公告)号：US10964522B2

公开(公告)日：2021-03-30

申请号：US16298755

申请日：2019-03-11

Applicant: KLA-Tencor Corporation

Inventor： Xinrong Jiang ,  Christopher Sears ,  Nikolai Chubun

IPC: H01J37/05 ,  H01J49/48

Abstract: A high-resolution electron energy analyzer is disclosed. In one embodiment, the electron energy analyzer includes an electrostatic lens configured to generate an energy-analyzing field region, decelerate electrons of an electron beam generated by an electron source, and direct the decelerated electrons of the electron beam to the energy-analyzing field region. In another embodiment, the electron energy analyzer includes an electron detector configured to receive one or more electrons passed through the energy-analyzing field region. In another embodiment, the electron detector is further configured to generate one or more signals based on the one or more received electrons.

公开(公告)号：US20210005421A1

公开(公告)日：2021-01-07

申请号：US16459970

申请日：2019-07-02

Applicant: APPLIED Materials, Inc.

Inventor： Scott E. Peitzsch

IPC: H01J37/30 ,  H01J37/05 ,  H01J37/12 ,  H01J37/147

Abstract: Provided herein are approaches for reducing particles in an ion implanter. In some embodiments, an electrostatic filter of the ion implanter may include a housing and a plurality of conductive beam optics within the housing, the plurality of conductive beam optics arranged around an ion beam-line. At least one conductive beam optic of the plurality of conductive beam optics may include a conductive core element, a resistive material disposed around the conductive core, and a conductive layer disposed around the resistive material.

公开(公告)号：US10886098B2

公开(公告)日：2021-01-05

申请号：US16197251

申请日：2018-11-20

Applicant: APPLIED Materials, Inc.

Inventor： Alexandre Likhanskii ,  Frank Sinclair ,  Shengwu Chang ,  Eric D. Hermanson ,  Nevin H. Clay

IPC: H01J37/05 ,  H01J37/12 ,  H01J37/08 ,  H01J37/147 ,  H01J37/317

Abstract: An apparatus may include a main chamber, an entrance tunnel, having an entrance axis extending into the main chamber, and an exit tunnel, connected to the main chamber and defining an exit axis, wherein the entrance tunnel and the exit tunnel define a beam bend of less than 25 degrees therebetween. The apparatus may include an electrode assembly, disposed in the main chamber, on a lower side of the exit tunnel; and a catch assembly, disposed within the main chamber, in a line of sight from an exterior aperture of the exit tunnel.

公开(公告)号：US10854418B2

公开(公告)日：2020-12-01

申请号：US16197523

申请日：2018-11-21

Applicant: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.

Inventor： Haruka Sasaki

IPC: H01J37/05 ,  H01J37/317 ,  H01J37/147 ,  H01J37/08 ,  H01J37/141 ,  H01J49/30

Abstract: A mass analyzer includes a mass analyzing magnet that applies a magnetic field to ions extracted from an ion source to deflect the ions, a mass analyzing slit that is provided downstream of the mass analyzing magnet and allows an ion of a desired ion species among the deflected ions to selectively pass, and a lens device that is provided between the mass analyzing magnet and the mass analyzing slit and applies a magnetic field and/or an electric field to the ion beam to adjust the convergence or divergence of a ion beam. The mass analyzer changes a focal point of the ion beam in a predetermined adjustable range between an upstream side and a downstream side of the mass analyzing slit with the lens device to adjust mass resolution.