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公开(公告)号：US11810754B2
公开(公告)日：2023-11-07
申请号：US17546667
申请日：2021-12-09
发明人： Eric D. Hermanson , Nevin Clay , Antonella Cucchetti , Philip Layne , Sudhakar Mahalingam , Michael Simmons
IPC分类号： H01J37/304
CPC分类号： H01J37/3045 , H01J2237/2446 , H01J2237/24578
摘要： A system and method for optimizing a ribbon ion beam in a beam line implantation system is disclosed. The system includes a calibration sensor disposed in the beam line after the mass analyzer. The calibration sensor is able to measure both the total current of the ribbon ion beam, as well as provide information about its vertical position. Information from the calibration sensor can then be utilized by a controller to adjust various parameters to improve the density as well as the vertical position. In some embodiments, the calibration sensor may include a plurality of Faraday sensors, where, both the total current and the vertical position of the ion beam can be determined. Furthermore, the focus of the ion beam can be estimated based on the distribution of the current in the height direction.
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公开(公告)号：US20230187171A1
公开(公告)日：2023-06-15
申请号：US17546667
申请日：2021-12-09
发明人： Eric D. Hermanson , Nevin Clay , Antonella Cucchetti , Philip Layne , Sudhakar Mahalingam , Michael Simmons
IPC分类号： H01J37/304
CPC分类号： H01J37/3045 , H01J2237/2446 , H01J2237/24578
摘要： A system and method for optimizing a ribbon ion beam in a beam line implantation system is disclosed. The system includes a calibration sensor disposed in the beam line after the mass analyzer. The calibration sensor is able to measure both the total current of the ribbon ion beam, as well as provide information about its vertical position. Information from the calibration sensor can then be utilized by a controller to adjust various parameters to improve the density as well as the vertical position. In some embodiments, the calibration sensor may include a plurality of Faraday sensors, where, both the total current and the vertical position of the ion beam can be determined. Furthermore, the focus of the ion beam can be estimated based on the distribution of the current in the height direction.
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公开(公告)号：US20210183609A1
公开(公告)日：2021-06-17
申请号：US16714097
申请日：2019-12-13
发明人： Alexandre Likhanskii , Antonella Cucchetti , Eric D. Hermanson , Frank Sinclair , Jay T. Scheuer , Robert C. Lindberg
IPC分类号： H01J37/12 , H01J37/24 , H01J37/32 , H01J37/30 , H01L21/425
摘要： Provided herein are approaches for decreasing particle generation in an electrostatic lens. In some embodiments, an ion implantation system may include an electrostatic lens including an entrance for receiving an ion beam and an exit for delivering the ion beam towards a target, the electrostatic lens including a first terminal electrode, a first suppression electrode, and a first ground electrode disposed along a first side of an ion beamline, wherein the first ground electrode is grounded and positioned adjacent the exit. The electrostatic lens may further include a second terminal electrode, a second suppression electrode, and a second ground electrode disposed along a second side of the ion beamline, wherein the second ground electrode is grounded and positioned adjacent the exit. The implantation system may further include a power supply operable to supply a voltage and a current to the electrostatic lens for controlling the ion beam.
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公开(公告)号：US10886098B2
公开(公告)日：2021-01-05
申请号：US16197251
申请日：2018-11-20
IPC分类号： H01J37/05 , H01J37/12 , H01J37/08 , H01J37/147 , H01J37/317
摘要： An apparatus may include a main chamber, an entrance tunnel, having an entrance axis extending into the main chamber, and an exit tunnel, connected to the main chamber and defining an exit axis, wherein the entrance tunnel and the exit tunnel define a beam bend of less than 25 degrees therebetween. The apparatus may include an electrode assembly, disposed in the main chamber, on a lower side of the exit tunnel; and a catch assembly, disposed within the main chamber, in a line of sight from an exterior aperture of the exit tunnel.
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公开(公告)号：US20240087839A1
公开(公告)日：2024-03-14
申请号：US17943753
申请日：2022-09-13
CPC分类号： H01J37/20 , G02F1/163 , H01J37/023 , H05B1/0233 , H01J37/3171 , H01J2237/2007
摘要： A workpiece mounting system comprising a chuck and a base is disclosed. The emissivity of the base is increased to allow more heat transfer from the chuck to the base. In some embodiments, the emissivity of the base may be controllable so that for ion beams with lower power levels, the emissivity remains low, enabling the chuck to reach the desired temperature quickly. For ion beams with higher power levels, the emissivity may increase to allow more heat transfer to the base, allowing the chuck to maintain the desired temperature. High emissivity coatings may be applied to the top surface of the base. In other embodiments, a set of movable shields may be disposed between the chuck and the base. The position of the shields may be a function of the power level of the incoming ion beam.
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公开(公告)号：US20230282451A1
公开(公告)日：2023-09-07
申请号：US17687620
申请日：2022-03-05
发明人： Vikram M. Bhosle , Timothy J. Miller , Eric D. Hermanson , Christopher J. Leavitt , Jordan B. Tye
IPC分类号： H01J37/32
CPC分类号： H01J37/32642 , H01J37/32651 , H01J37/32412 , H01J37/32935
摘要： A plasma doping system including a plasma doping chamber, a platen mounted in the plasma doping chamber for supporting a workpiece, a source of ionizable gas coupled to the chamber, the ionizable gas containing a desired dopant for implantation into the workpiece, a plasma source for producing a plasma having a plasma sheath in a vicinity of the workpiece, the plasma containing positive ions of the ionizable gas, and accelerating said positive ions across the plasma sheath toward the platen for implantation into the workpiece, a shield ring surrounding the platen and adapted to extend the plasma sheath beyond an edge of the workpiece, and a cover ring disposed on top of the shield ring and adapted to mitigate sputtering of the shield ring, wherein the cover ring comprises a crystalline base layer and a non-crystalline top layer.
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公开(公告)号：US11562885B2
公开(公告)日：2023-01-24
申请号：US17351842
申请日：2021-06-18
IPC分类号： H01J37/05 , H01J37/301 , H01J37/317
摘要： A beamline ion implanter and a method of operating a beamline ion implanter. A method may include performing an ion implantation procedure during a first time period on a first set of substrates, in a process chamber of the ion implanter, and performing a first pressure-control routine during a second time period by: introducing a predetermined gas to reach a predetermined pressure into at least a downstream portion of the beam-line for a second time period. The method may include, after completion of the first pressure-control routine, performing the ion implantation procedure on a second set of substrates during a third time period.
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公开(公告)号：US11437215B2
公开(公告)日：2022-09-06
申请号：US16714097
申请日：2019-12-13
发明人： Alexandre Likhanskii , Antonella Cucchetti , Eric D. Hermanson , Frank Sinclair , Jay T. Scheuer , Robert C. Lindberg
摘要： Provided herein are approaches for decreasing particle generation in an electrostatic lens. In some embodiments, an ion implantation system may include an electrostatic lens including an entrance for receiving an ion beam and an exit for delivering the ion beam towards a target, the electrostatic lens including a first terminal electrode, a first suppression electrode, and a first ground electrode disposed along a first side of an ion beamline, wherein the first ground electrode is grounded and positioned adjacent the exit. The electrostatic lens may further include a second terminal electrode, a second suppression electrode, and a second ground electrode disposed along a second side of the ion beamline, wherein the second ground electrode is grounded and positioned adjacent the exit. The implantation system may further include a power supply operable to supply a voltage and a current to the electrostatic lens for controlling the ion beam.
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公开(公告)号：US20220037114A1
公开(公告)日：2022-02-03
申请号：US17351842
申请日：2021-06-18
IPC分类号： H01J37/301 , H01J37/317 , H01J37/05
摘要： A beamline ion implanter and a method of operating a beamline ion implanter. A method may include performing an ion implantation procedure during a first time period on a first set of substrates, in a process chamber of the ion implanter, and performing a first pressure-control routine during a second time period by: introducing a predetermined gas to reach a predetermined pressure into at least a downstream portion of the beam-line for a second time period. The method may include, after completion of the first pressure-control routine, performing the ion implantation procedure on a second set of substrates during a third time period.
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公开(公告)号：US20200161077A1
公开(公告)日：2020-05-21
申请号：US16197251
申请日：2018-11-20
IPC分类号： H01J37/05 , H01J37/12 , H01J37/08 , H01J37/317 , H01J37/147
摘要： An apparatus may include a main chamber, an entrance tunnel, having an entrance axis extending into the main chamber, and an exit tunnel, connected to the main chamber and defining an exit axis, wherein the entrance tunnel and the exit tunnel define a beam bend of less than 25 degrees therebetween. The apparatus may include an electrode assembly, disposed in the main chamber, on a lower side of the exit tunnel; and a catch assembly, disposed within the main chamber, in a line of sight from an exterior aperture of the exit tunnel.
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