公开(公告)号：US20230349045A1

公开(公告)日：2023-11-02

申请号：US18214798

申请日：2023-06-27

申请人： NIPPON TECHNO-CARBON CO., LTD.

发明人： Shuichi Okubo ,  Hikari Takahashi ,  Toshiya Suzuki ,  Hidehiko Usuba

IPC分类号： C23C16/46 ,  C01B32/21 ,  C23C16/32 ,  C23C16/34 ,  C23C16/458 ,  C30B25/12 ,  C30B29/40 ,  H01L21/67 ,  H01L21/687

CPC分类号： C23C16/46 ,  C01B32/21 ,  C23C16/325 ,  C23C16/342 ,  C23C16/4583 ,  C30B25/12 ,  C30B29/403 ,  H01L21/67103 ,  H01L21/68757 ,  C01P2006/32 ,  C01P2006/40

摘要： The present invention provides a susceptor with improved responsiveness of temperature control, and an object thereof is to obtain a high-quality wafer product without impairing productivity. Provided is a susceptor that generates heat by induction heating, the susceptor including a graphite base material and a ceramic coating layer. The graphite base material exhibits a variation (ρmax/ρmin) of an in-plane electrical resistivity distribution of the graphite base material at room temperature of 1.00 to 1.05 and a rate of high-temperature change (ρ1600/ρ800) of electrical resistivity at 1600° C. to that at 800° C. of 1.14 to 1.30.

公开(公告)号：US20230317455A1

公开(公告)日：2023-10-05

申请号：US18206514

申请日：2023-06-06

申请人： Applied Materials, Inc.

发明人： Prashant Kumar KULSHRESHTHA ,  Ziqing DUAN ,  Karthik Thimmavajjula NARASIMHA ,  Kwangduk Douglas LEE ,  Bok Hoen KIM

IPC分类号： H01L21/033 ,  H01L21/3065 ,  C23C16/505 ,  H01L21/02 ,  C23C16/32

CPC分类号： H01L21/0338 ,  H01L21/3065 ,  C23C16/505 ,  H01L21/02112 ,  H01L21/02274 ,  C23C16/32 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337

摘要： Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-carbon films on a substrate. In one implementation, a method of processing a substrate is provided. The method comprises flowing a hydrocarbon-containing gas mixture into a processing volume of a processing chamber having a substrate positioned therein, wherein the substrate is heated to a substrate temperature from about 400 degrees Celsius to about 700 degrees Celsius, flowing a boron-containing gas mixture into the processing volume and generating an RF plasma in the processing volume to deposit a boron-carbon film on the heated substrate, wherein the boron-carbon film has an elastic modulus of from about 200 to about 400 GPa and a stress from about −100 MPa to about 100 MPa.

公开(公告)号：US20230295796A1

公开(公告)日：2023-09-21

申请号：US18157248

申请日：2023-01-20

申请人： X-ENERGY, LLC

发明人： Howard Taery Kim

IPC分类号： C23C16/32 ,  C23C16/448 ,  C23C16/442 ,  G21C3/62

CPC分类号： C23C16/32 ,  C23C16/442 ,  C23C16/4481 ,  G21C3/626

摘要： A metal or ceramic layer may be deposited on nuclear materials by chemical vapor deposition using a non-halogenated liquid organometallic metal precursor. The chemical vapor deposition is carried out by a method including steps of introducing nuclear fuel particles into a fluidized bed reactor, and heating the fluidized bed reactor to a desired operating temperature T1. A flow of a carrier- gas is initiated through a vaporizer, and the non-halogenated liquid organometallic metal precursor is injected into the vaporizer and vaporized. A first mixture of the carrier gas and the vaporized non-halogenated liquid organometallic metal precursor may be mixed with a gaseous carbon source, a gaseous nitrogen source, a gaseous oxygen source, or a mixture thereof to produce a second mixture; and the second mixture flows into the fluidized bed reactor at operating temperature T1, allowing deposition of a desired ceramic coating on the particles. The non-halogenated liquid organometallic metal precursor may be a compound of Zr, Hf, Nb, Ta, W, V, Ti, or a mixture thereof.

公开(公告)号：US20230279539A1

公开(公告)日：2023-09-07

申请号：US18142283

申请日：2023-05-02

申请人： ASM IP Holding B.V.

发明人： Paul Ma ,  Roghayyeh Lotfi ,  Jaebeom Lee ,  Eric Christopher Stevens ,  Amit Mishra

IPC分类号： C23C16/06 ,  C23C16/455 ,  C23C28/00 ,  C23C16/30 ,  C23C16/32

CPC分类号： C23C16/06 ,  C23C16/45527 ,  C23C28/341 ,  C23C16/303 ,  C23C16/305 ,  C23C16/32

摘要： Methods and systems for forming molybdenum layers on a surface of a substrate and structures and devices formed using the methods are disclosed. Exemplary methods include forming an underlayer prior to forming the molybdenum layer. The underlayer can be used to manipulate stress in the molybdenum layer and/or reduce a nucleation temperature and/or deposition temperature of a step of forming the molybdenum layer.

公开(公告)号：US11749525B2

公开(公告)日：2023-09-05

申请号：US17690604

申请日：2022-03-09

申请人： NuFlare Technology, Inc.

发明人： Yoshiaki Daigo ,  Akio Ishiguro ,  Hideki Ito

IPC分类号： C30B25/12 ,  C23C16/32 ,  C23C16/458 ,  C23C16/46 ,  C23C28/04 ,  C30B25/10 ,  C30B25/14 ,  C30B29/36 ,  C30B29/68 ,  H01L21/02 ,  H01L29/16 ,  H01L29/167 ,  C30B25/16 ,  C23C16/455

CPC分类号： C30B25/12 ,  C23C16/325 ,  C23C16/4584 ,  C23C16/46 ,  C23C28/04 ,  C30B25/10 ,  C30B25/14 ,  C30B29/36 ,  C30B29/68 ,  H01L21/0262 ,  H01L21/02529 ,  H01L21/02576 ,  H01L29/167 ,  H01L29/1608 ,  C23C16/455 ,  C30B25/165

摘要： A vapor phase growth apparatus according to an embodiment includes a reaction chamber; a substrate holder having a holding wall capable holding an outer periphery of the substrate; a process gas supply part provided above the reaction chamber, the process gas supply part having a first region supplying a first process gas and a second region around the first region supplying a second process gas having a carbon/silicon atomic ratio higher than that of the first process gas, an inner peripheral diameter of the second region being 75% or more and 130% or less of a diameter of the holding wall; a sidewall provided between the process gas supply part and the substrate holder, an inner peripheral diameter of the sidewall being 110% or more and 200% or less of an outer peripheral diameter of the second region; a first heater; a second heater; and a rotation driver.

公开(公告)号：US20230268177A1

公开(公告)日：2023-08-24

申请号：US18309111

申请日：2023-04-28

申请人： SHOWA DENKO K.K.

发明人： Koji KAMEI

IPC分类号： H01L21/02 ,  C23C16/32 ,  C30B25/20 ,  C30B29/36 ,  H01L29/04 ,  H01L29/16 ,  H01L29/34 ,  C01B32/956

CPC分类号： H01L21/02529 ,  C23C16/325 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02428 ,  H01L21/02634 ,  H01L29/04 ,  H01L29/1608 ,  H01L29/34 ,  C01B32/956 ,  C01B32/90

摘要： According to the present invention, there is provided a SiC epitaxial wafer including: a 4H-SiC single crystal substrate which has a surface with an off angle with respect to a c-plane as a main surface and a bevel part on a peripheral part; and a SiC epitaxial layer having a film thickness of 20 μm or more, which is formed on the 4H-SiC single crystal substrate, in which a density of an interface dislocation extending from an outer peripheral edge of the SiC epitaxial layer is 10 lines/cm or less.

公开(公告)号：US11735415B2

公开(公告)日：2023-08-22

申请号：US17267768

申请日：2019-06-28

申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

发明人： Takaya Miyase ,  Keiji Wada

IPC分类号： H01L21/02 ,  C23C16/32 ,  C23C16/455

CPC分类号： H01L21/02378 ,  C23C16/325 ,  C23C16/45502 ,  H01L21/02271 ,  H01L21/02433

摘要： A first main surface is a (000-1) plane or a plane inclined by an angle of less than or equal to 8° relative to the (000-1) plane. A reaction chamber has a cross-sectional area of more than or equal to 132 cm2 and less than or equal to 220 cm2 in a plane perpendicular to a direction of movement of a mixed gas. When an X axis indicates a first value and a Y axis indicates a second value, the first value and the second value fall within a hexagonal region surrounded by first coordinates, second coordinates, third coordinates, fourth coordinates, fifth coordinates and sixth coordinates in XY plane coordinates, where the first coordinates are (0.038, 0.0019), the second coordinates are (0.069, 0.0028), the third coordinates are (0.177, 0.0032), the fourth coordinates are (0.038, 0.0573), the fifth coordinates are (0.069, 0.0849), and the sixth coordinates are (0.177, 0.0964).

公开(公告)号：US11724310B2

公开(公告)日：2023-08-15

申请号：US15883416

申请日：2018-01-30

申请人： Consolidated Nuclear Security, LLC ,  UT-Battelle, LLC

发明人： Paul A. Menchhofer ,  Roland D. Seals ,  James O. Kiggans, Jr.

IPC分类号： B22F1/00 ,  C23C16/02 ,  B22F1/16 ,  H01B1/02 ,  C23C16/32 ,  C22C32/00 ,  C01B32/914 ,  C30B29/62 ,  C30B25/00 ,  C22C47/00 ,  C22C49/14 ,  C30B29/36 ,  C23C16/44 ,  C01B32/921 ,  C22C49/04 ,  B22F1/054

CPC分类号： B22F1/16 ,  C01B32/914 ,  C01B32/921 ,  C22C32/0052 ,  C22C47/00 ,  C22C49/04 ,  C22C49/14 ,  C23C16/0218 ,  C23C16/32 ,  C23C16/4417 ,  C30B25/005 ,  C30B29/36 ,  C30B29/62 ,  H01B1/02 ,  B22F1/054 ,  B22F2301/205 ,  B22F2302/10

摘要： Disclosed herein are structures comprising a titanium, zirconium, or hafnium powder particle with titanium carbide, zirconium carbide, or hafnium carbide (respectively) nano-whiskers grown directly from and anchored to the powder particle. Also disclosed are methods for fabrication of such structures, involving heating the powder particles and exposing the particles to an organic gas.

公开(公告)号：US20230242453A1

公开(公告)日：2023-08-03

申请号：US18042174

申请日：2021-08-11

申请人： SAFRAN CERAMICS ,  CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE ,  UNIVERSITE DE BORDEAUX

发明人： Arnaud DELEHOUZE ,  Pierre FENETAUD ,  Sylvain Lucien JACQUES

IPC分类号： C04B35/628 ,  C04B35/80 ,  C23C16/04 ,  C23C16/511 ,  C23C16/32 ,  C23C16/34 ,  C23C16/56 ,  C23C16/448 ,  C23C16/54

CPC分类号： C04B35/62884 ,  C04B35/80 ,  C04B35/62863 ,  C04B35/62868 ,  C23C16/045 ,  C23C16/511 ,  C23C16/325 ,  C23C16/342 ,  C23C16/345 ,  C23C16/56 ,  C23C16/4482 ,  C23C16/545 ,  C04B2235/5252 ,  C04B2235/5248 ,  C04B2235/3826 ,  C04B2235/386 ,  C04B2235/614

摘要： A method for treating a carbon or ceramic yarn includes forming a coating on the yarn in a reaction zone of a reactor by heating a segment of the yarn in the presence of a gas phase in a microwave field, wherein the gas phase includes a mixture of a diluent gas and a coating precursor in the vapor state, and wherein the gas phase is formed at least by introducing the diluent gas into the reactor and mixing the introduced diluent gas with the coating precursor in the reactor before the reaction zone.

公开(公告)号：US11708634B2

公开(公告)日：2023-07-25

申请号：US17704582

申请日：2022-03-25

申请人： Novellus Systems, Inc.

发明人： Bhadri N. Varadarajan

IPC分类号： C23C16/452 ,  C23C16/32 ,  C23C16/505 ,  H01L21/02 ,  C23C16/50 ,  C23C16/52

CPC分类号： C23C16/325 ,  C23C16/452 ,  C23C16/50 ,  C23C16/505 ,  C23C16/52 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02274

摘要： Provided are methods and systems for providing silicon-containing films. The composition of the silicon-containing film can be controlled by the choice of the combination of precursors and the ratio of flow rates between the precursors. The silicon-containing films can be deposited on a substrate by flowing two different organo-silicon precursors to mix together in a reaction chamber. The organo-silicon precursors react with one or more radicals in a substantially low energy state to form the silicon-containing film. The one or more radicals can be formed in a remote plasma source.