公开(公告)号：US20190352188A1

公开(公告)日：2019-11-21

申请号：US16476966

申请日：2018-08-23

申请人： NIPPON TECHNO-CARBON CO., LTD.

发明人： Hidehiko Usuba ,  Toshiya Suzuki

IPC分类号： C01B32/20 ,  H05B3/14

摘要： Provided is a metallic impurity-free graphite material utilizing Joule heat generation with well-balanced resistances at room temperature and at high temperatures. The graphite material has a specific resistance at 25° C. (ρ25) of 10.0 μΩ·m or more and 12.0 μΩ·m or less; a specific resistance at 1600° C. (ρ1600) of 9.5 μΩ·m or more and 11.0 μΩ·m or less; a ratio (ρ1600/ρ25) of specific resistance at 1600° C. to that at 25° C. of 0.85 or more and 1.00 or less; a temperature at which the minimum specific resistance (ρmin) appears of 500° C. or higher and 800° C. or lower; a ratio (ρmin/ρ25) of the minimum specific resistance to the specific resistance at 25° C. of 0.70 or more and 0.80 or less; and a bulk density of 1.69 g/cm3 or more and 1.80 g/cm3 or less.

公开(公告)号：US20230349045A1

公开(公告)日：2023-11-02

申请号：US18214798

申请日：2023-06-27

申请人： NIPPON TECHNO-CARBON CO., LTD.

发明人： Shuichi Okubo ,  Hikari Takahashi ,  Toshiya Suzuki ,  Hidehiko Usuba

IPC分类号： C23C16/46 ,  C01B32/21 ,  C23C16/32 ,  C23C16/34 ,  C23C16/458 ,  C30B25/12 ,  C30B29/40 ,  H01L21/67 ,  H01L21/687

CPC分类号： C23C16/46 ,  C01B32/21 ,  C23C16/325 ,  C23C16/342 ,  C23C16/4583 ,  C30B25/12 ,  C30B29/403 ,  H01L21/67103 ,  H01L21/68757 ,  C01P2006/32 ,  C01P2006/40

摘要： The present invention provides a susceptor with improved responsiveness of temperature control, and an object thereof is to obtain a high-quality wafer product without impairing productivity. Provided is a susceptor that generates heat by induction heating, the susceptor including a graphite base material and a ceramic coating layer. The graphite base material exhibits a variation (ρmax/ρmin) of an in-plane electrical resistivity distribution of the graphite base material at room temperature of 1.00 to 1.05 and a rate of high-temperature change (ρ1600/ρ800) of electrical resistivity at 1600° C. to that at 800° C. of 1.14 to 1.30.

公开(公告)号：US10550001B2

公开(公告)日：2020-02-04

申请号：US16476966

申请日：2018-08-23

申请人： NIPPON TECHNO-CARBON CO., LTD.

发明人： Hidehiko Usuba ,  Toshiya Suzuki

IPC分类号： C01B32/20 ,  H05B3/14

摘要： Provided is a metallic impurity-free graphite material utilizing Joule heat generation with well-balanced resistances at room temperature and at high temperatures. The graphite material has a specific resistance at 25° C. (ρ25) of 10.0 μΩ·m or more and 12.0 μΩ·m or less; a specific resistance at 1600° C. (ρ1600) of 9.5 μΩ·m or more and 11.0 μΩ·m or less; a ratio (ρ1600/ρ25) of specific resistance at 1600° C. to that at 25° C. of 0.85 or more and 1.00 or less; a temperature at which the minimum specific resistance (ρmin) appears of 500° C. or higher and 800° C. or lower; a ratio (ρmin/ρ25) of the minimum specific resistance to the specific resistance at 25° C. of 0.70 or more and 0.80 or less; and a bulk density of 1.69 g/cm3 or more and 1.80 g/cm3 or less.