摘要:
An improved electrical circuit for logic output level shifting using SiC JFETs with resistors on the input, inverting, stage and using diode degenerated JFET sources in the output stage.
摘要:
A semiconductor device having a plurality of constituent components within a semiconductor body such that the device in combination with one of a plurality of different possible metallization patterns of conductors forms a desired circuit arrangement, is provided in a semiconductor body having an epitaxial layer of one conductivity type on a substrate of the same conductivity type and suitable to be employed as a conductive plane, and is manufactured by a method which includes the diffusion step of providing simultaneously within the epitaxial layer regions of opposite conductivity type of the constituent components of the device and a network of conductive tracks, it being possible, for example, for the device to include bipolar transistors of the so-called collector-diffusion-isolation construction or isoplanar construction.
摘要:
A semiconductor device having a plurality of constituent components within a semiconductor body such that the device in combination with one of a plurality of different possible metallisation patterns of conductors forms a desired circuit arrangement, is provided in a semiconductor body having a epitaxial layer of one conductivity type on a substrate of the same conductivity type and suitable to be employed as a conductive plane, and is manufactured by a method which includes the diffusion step of providing simultaneously within the epitaxial layer regions of opposite conductivity type of the constituent components of the device and a network of conductive tracks, it being possible, for example, for the device to include bipolar transistors of the so-called collector-diffusion-isolation construction or isoplanar construction.