摘要:
A technique for generating a carry, AND, OR, NAND, NOR, INVERTING logic and sum and carry: operation in a one or at most two device delay by employing negative differential resistance devices. Circuits implemented with this technique are not only extremely fast, but use a small number of active devices as well. This technique could be implemented in building circuits using any transistor Bipolar Transistors, Field Effect Transistors (FETs), High Electron Mobility Transistors (HEMTs), Hetero-junction Bipolar Transistors (HBTs), etc. The negative differential resistance characteristics of the resonant tunneling transistor can be exploited to increase the noise margin. Resonant tunneling devices have the added advantage of working at very high speeds, and could yield propagation delays less than 5ps.
摘要:
A mute drive circuit includes a micro-controller including an I/O port; a mute circuit; and an npn transistor. When an electronic device using the mute circuit is plugged into an AC power source, the I/O port is set to the logic low, the mute circuit performs the mute mode. When the electronic device is turned on, the I/O port is controlled set to the logic low for a period and then be pulled up to the logic high, the mute circuit performs the mute mode for the period and then enters into the normal mode. When the electronic device is turned off, the I/O port is controlled to set to the logic low, the mute circuit performs the mute mode. When the electronic device is unplugged from the AC power source, the I/O port is pulled down to the logic low, the mute circuit performs the mute mode.