公开(公告)号：US20050276613A1

公开(公告)日：2005-12-15

申请号：US11135705

申请日：2005-05-24

申请人： David Welch ,  Fred Kish ,  Vincent Dominic ,  Ting-Kuang Chiang

发明人： David Welch ,  Fred Kish ,  Vincent Dominic ,  Ting-Kuang Chiang

IPC分类号： G02B6/12 ,  G02B6/34 ,  G02F1/017 ,  H01S5/026 ,  H01S5/0625 ,  H01S5/0683 ,  H01S5/12 ,  H01S5/20 ,  H01S5/22 ,  H01S5/34 ,  H01S5/40 ,  H01S5/50 ,  H04B10/12 ,  H04B10/145 ,  H04B10/158 ,  H04B10/17 ,  H04J14/02 ,  H04B10/00

CPC分类号： H04B10/2914 ,  B82Y20/00 ,  G02B6/12004 ,  G02B6/12007 ,  G02B6/12011 ,  G02B6/12019 ,  G02B6/12023 ,  G02B6/12026 ,  G02B6/12028 ,  G02B6/1203 ,  G02B6/12033 ,  G02B6/4249 ,  G02F1/01725 ,  G02F2001/0175 ,  G02F2001/01758 ,  H01S5/026 ,  H01S5/0264 ,  H01S5/0265 ,  H01S5/0268 ,  H01S5/0425 ,  H01S5/06256 ,  H01S5/06258 ,  H01S5/0683 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/12 ,  H01S5/1228 ,  H01S5/183 ,  H01S5/2077 ,  H01S5/22 ,  H01S5/2224 ,  H01S5/227 ,  H01S5/3404 ,  H01S5/3408 ,  H01S5/34306 ,  H01S5/4025 ,  H01S5/4031 ,  H01S5/4087 ,  H01S5/50 ,  H01S5/5072 ,  H04B10/25 ,  H04B10/50 ,  H04B10/675 ,  H04J14/02

摘要： A FEC enhanced system for an optical transport or communication network that includes an optical transmitter that has a transmitter photonic integrated circuit (TxPIC) chip having an integrated circuit comprising an array of modulated sources providing a plurality of optical modulated channel signals comprising digital bit data streams where each signal is at a wavelength on a wavelength grid. The modulated channel signal outputs from the modulated sources are provided to an integrated multiplexer in the circuit to provide a WDM output signal at a circuit output. At least one FEC encoder is coupled to the modulated sources to encode error-correcting code containing redundant information of the data bit stream for each channel signal. An optical receiver in the network includes a receiver photonic integrated circuit (RxPIC) chip having an integrated circuit comprising an input to a demultiplexer and an array of photodetectors coupled to outputs of the demultiplexer. At least one FEC decoder is coupled to the photodetectors to provide decoded data relating to the bit error rate (BER). Information relating to the BER is provided by a controller at the optical receiver to provide real-time information to the optical transmitter relating to optical characteristics of the modulated sources based upon the BER data.

摘要翻译： 一种用于光传输或通信网络的FEC增强系统，其包括具有发射机光子集成电路（TxPIC）芯片的光发射机，所述发射机光子集成电路（TxPIC）芯片具有集成电路，该集成电路包括调制源阵列，其提供多个光调制信道信号， 其中每个信号处于波长网格上的波长。 来自调制源的调制信道信号输出被提供给电路中的集成多路复用器，以在电路输出端提供WDM输出信号。 至少一个FEC编码器耦合到调制源以对每个信道信号编码包含数据比特流的冗余信息的纠错码。 网络中的光接收器包括具有集成电路的接收器光子集成电路（RxPIC）芯片，该集成电路包括到解复用器的输入和耦合到解复用器的输出的光电检测器阵列。 至少一个FEC解码器耦合到光电检测器以提供与误码率（BER）有关的解码数据。 与BER相关的信息由光接收器处的控制器提供，以基于BER数据向与光发射机相关的调制源的光学特性提供实时信息。

公开(公告)号：US20050135729A1

公开(公告)日：2005-06-23

申请号：US11030466

申请日：2005-01-06

申请人： David Welch ,  Radhakrishnan Nagarajan ,  Fred Kish ,  Mark Missey ,  Vincent Dominic ,  Atul Mathur ,  Frank Peters ,  Charles Joyner ,  Richard Schneider ,  Ting-Kuang Chiang

发明人： David Welch ,  Radhakrishnan Nagarajan ,  Fred Kish ,  Mark Missey ,  Vincent Dominic ,  Atul Mathur ,  Frank Peters ,  Charles Joyner ,  Richard Schneider ,  Ting-Kuang Chiang

IPC分类号： G02B6/12 ,  G02B6/34 ,  G02F1/017 ,  H01S5/026 ,  H01S5/0625 ,  H01S5/0683 ,  H01S5/12 ,  H01S5/20 ,  H01S5/22 ,  H01S5/34 ,  H01S5/40 ,  H01S5/50 ,  H04B10/12 ,  H04B10/145 ,  H04B10/158 ,  H04B10/17 ,  H04J14/02

CPC分类号： H04B10/2914 ,  B82Y20/00 ,  G02B6/12004 ,  G02B6/12007 ,  G02B6/12011 ,  G02B6/12019 ,  G02B6/12023 ,  G02B6/12026 ,  G02B6/12028 ,  G02B6/1203 ,  G02B6/12033 ,  G02B6/4249 ,  G02F1/01725 ,  G02F2001/0175 ,  G02F2001/01758 ,  H01S5/026 ,  H01S5/0264 ,  H01S5/0265 ,  H01S5/0268 ,  H01S5/0425 ,  H01S5/06256 ,  H01S5/06258 ,  H01S5/0683 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/12 ,  H01S5/1228 ,  H01S5/183 ,  H01S5/2077 ,  H01S5/22 ,  H01S5/2224 ,  H01S5/227 ,  H01S5/3404 ,  H01S5/3408 ,  H01S5/34306 ,  H01S5/4025 ,  H01S5/4031 ,  H01S5/4087 ,  H01S5/50 ,  H01S5/5072 ,  H04B10/25 ,  H04B10/50 ,  H04B10/675 ,  H04J14/02

摘要： An optical receiver photonic integrated circuit (RxPIC) comprises a semiconductor monolithic chip having an input to receive from an optical transmission link a combined channel signal originating from an optical transmitter source and comprising a plurality of channel signals having different wavelengths forming a wavelength grid. An optical decombiner is integrated in the chip and optically coupled to the input to receive the multiplexed channel signal and provide a decombined individual channel signal on an output waveguide of a plurality of such output waveguides provided from the optical decombiner. A plurality of photodetectors are also integrated in the chip and each photodetector is optically coupled to one of the output waveguides to receive a decombined channel signal and convert the channel signal to an electrical signal. A controller is coupled to receive a portion of the converted signals to determine at least one performance property of the signals and provide service channel signal as feedback about that property via the semiconductor monolithic chip to the optical transmitter source. The controller is coupled to an integrated optical service channel (OSC) on the chip that has a light source which is modulated by the service channel signal. The light source may be integrated on the chip. The optical service channel (OSC) is coupled as an input to the decombiner for transport off the chip to optical transmitter source. If there is an optical amplifier at the input of the chip, the service channel signai will be amplified by that amplifier. Such an optical amplifier may be an off-chip rare earth doped amplifier or an on-chip semiconductor optical amplifier.

摘要翻译： 光接收器光子集成电路（RxPIC）包括半导体单片芯片，其具有从光传输链路接收源自光发射机源的组合信道信号的输入，并且包括具有形成波长网格的不同波长的多个信道信号。 光学分解器集成在芯片中并且光耦合到输入端以接收多路复用的信道信号，并且在由光学分解器提供的多个这样的输出波导的输出波导上提供去重组的单独信道信号。 多个光电检测器也集成在芯片中，并且每个光电检测器光耦合到输出波导中的一个，以接收解复用通道信号并将通道信号转换为电信号。 控制器被耦合以接收转换信号的一部分以确定信号的至少一个性能特性，并且将服务信道信号作为关于经由半导体单芯片到光发射机源的属性的反馈提供。 控制器耦合到芯片上的集成光学服务信道（OSC），其具有由服务信道信号调制的光源。 光源可以集成在芯片上。 光服务信道（OSC）作为输入端耦合到分解器，用于从芯片传输到光发射机源。 如果在芯片输入端有一个光放大器，则该放大器将放大服务通道信号。 这种光放大器可以是片外稀土掺杂放大器或片上半导体光放大器。

公开(公告)号：US06785318B1

公开(公告)日：2004-08-31

申请号：US10294160

申请日：2002-11-14

申请人： Yasuhiro Matsui ,  Daryoosh Vakhshoori ,  Peidong Wang

发明人： Yasuhiro Matsui ,  Daryoosh Vakhshoori ,  Peidong Wang

IPC分类号： H01S308

CPC分类号： B82Y20/00 ,  H01S5/041 ,  H01S5/0607 ,  H01S5/18355 ,  H01S5/18366 ,  H01S5/18388 ,  H01S5/3202 ,  H01S5/3404

摘要： Described is a semiconductor laser for generating an optical beam having a stable polarization mode. The laser includes a semiconductor structure having an active layer and a stressor disposed on the surface of the semiconductor structure. Birefringence and gain anisotropy are induced in the semiconductor structure in response to the stress applied by the stressor. The active layer includes one or more quantum wells fabricated to generate an interfacial strain and a desired gain anisotropy. By fabricating the active layer away from the stressor, the gain anisotropy induced by the stressor is substantially reduced. Consequently, the gain anisotropy from the interfacial stress is greater than the gain anisotropy induced by the stressor. The resulting semiconductor structure has a maximum refractive index direction that is parallel to the direction of maximum gain, thus enabling a stable polarization mode for the laser.

摘要翻译： 描述了用于产生具有稳定偏振模式的光束的半导体激光器。 激光器包括具有设置在半导体结构的表面上的有源层和应力器的半导体结构。 响应于应力源施加的应力，在半导体结构中诱发双折射和增益各向异性。 有源层包括一个或多个量子阱，其被制造成产生界面应变和期望的增益各向异性。 通过制造有源层远离应力源，应力源引起的增益各向异性显着降低。 因此，来自界面应力的增益各向异性大于由应力源引起的增益各向异性。 所得到的半导体结构具有平行于最大增益方向的最大折射率方向，从而能够实现激光器的稳定的偏振模式。

公开(公告)号：US06175446B1

公开(公告)日：2001-01-16

申请号：US09159141

申请日：1998-09-23

申请人： Gerard A. Alphonse

发明人： Gerard A. Alphonse

IPC分类号： H01S0300

CPC分类号： B82Y20/00 ,  H01S5/3404 ,  H01S5/4043 ,  H01S5/5009 ,  H01S5/5018

摘要： A semiconductor optical amplifier having various ratios of TE/TM polarization in a multiple quantum well structure on a substrate formed by growing a certain number of quantum wells under compressive strain and others under tensile strain, as well as buffers. The gain coefficients of the respective well layers are chosen such that the overall TE and TM gains are matched over the whole spontaneous emission spectrum so that the semiconductor optical amplifier is polarization-independent.

摘要翻译： 在通过在压缩应变下生长一定数量的量子阱并且在拉伸应变下生长一定数量的量子阱，以及缓冲器，在通过在一定数量的量子阱上形成的多个量子阱结构中的TE / TM偏振的各种比率的半导体光放大器。 选择各个阱层的增益系数使得整个TE和TM增益在整个自发发射光谱上匹配，使得半导体光放大器是偏振无关的。

公开(公告)号：US5953362A

公开(公告)日：1999-09-14

申请号：US990874

申请日：1997-12-15

申请人： Jagadeesh Pamulapati ,  Paul H. Shen

发明人： Jagadeesh Pamulapati ,  Paul H. Shen

IPC分类号： H01S5/02 ,  H01S5/183 ,  H01S5/32 ,  H01S5/42 ,  H01S3/08 ,  H01L21/20 ,  H01L33/00

CPC分类号： H01S5/18355 ,  B82Y20/00 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/18352 ,  H01S5/3201 ,  H01S5/3404

摘要： A vertical cavity surface emitting laser is formed by eutectically bonding a laser cavity, defined by an active layer disposed between first and second, stacked mirror assemblies, to a host substrate which has a predetermined anisotropic coefficient of thermal expansion. During the forming process, a uniaxial strain is induced within the laser cavity. With this arrangement, large arrays of vertical cavity surface emitting lasers can be formed with predetermined polarization states that are based on the selected anisotropic host substrate.

摘要翻译： 垂直腔表面发射激光器通过将由设置在第一和第二堆叠反射镜组件之间的有源层限定的激光腔共晶地结合到具有预定的各向异性热膨胀系数的主体衬底而形成。 在成形过程中，在激光腔内引起单轴应变。 利用这种布置，可以形成具有基于所选择的各向异性主体衬底的预定极化状态的大阵列垂直腔表面发射激光器。

公开(公告)号：US5850411A

公开(公告)日：1998-12-15

申请号：US713892

申请日：1996-09-17

申请人： Jo S. Major, Jr. ,  Randall S. Geels

发明人： Jo S. Major, Jr. ,  Randall S. Geels

IPC分类号： H01S5/065 ,  H01S5/223 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/34326 ,  H01S2301/14 ,  H01S5/0658 ,  H01S5/2022 ,  H01S5/2231 ,  H01S5/3404

摘要： An AlGaInP/GaAs laser diode is disclosed in which the active region is made up of quantum wells that are sufficiently thin (less than 5 nm thick) that the transition energy increase due to quantum confinement of the carriers becomes significant. This allows the quantum well material composition to be selected for compressive strain so that the laser operates in the TE polarization mode, while still obtaining a transition energy of from 1.9-2.0 eV for 620-650 nm laser emission. Quantum barriers have sufficient thickness to confine carriers to the quantum wells. Self-pulsation may be obtained in a heterostructure that also includes a saturable absorption layer proximate to the active region and a ridge structure transversely confining absorption produced carriers in the central section of the absorber layer, while allowing lateral carrier diffusion to side regions where carriers are allowed to leave the absorber layer.

公开(公告)号：US5790581A

公开(公告)日：1998-08-04

申请号：US833994

申请日：1997-04-09

申请人： Jun Nitta

发明人： Jun Nitta

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/06 ,  H01S5/062 ,  H01S5/0625 ,  H01S5/065 ,  H01S5/12 ,  H01S5/34 ,  H01S5/343 ,  H01S3/18

CPC分类号： B82Y20/00 ,  H01S5/0625 ,  H01S2301/14 ,  H01S5/06236 ,  H01S5/06258 ,  H01S5/1243 ,  H01S5/3404

摘要： An oscillation polarization mode selective semiconductor laser for selectively performing one of oscillations in different polarization modes, is provided. The semiconductor laser includes a substrate, a laser structure formed on the substrate, and a phase shift region formed in the laser structure. The laser structure includes an active region in which population inversion is established by a current injection thereinto. At least a portion of the phase shift region has a strained quantum well structure in which degrees of a change in refractive index for internal light in different polarization modes due to a current injection thereinto are different from each other. The polarization mode of a light output from the laser can be changed by a small amount of current injected into the phase shift region, and fluctuation in the output intensity can be suppressed during a transition operation in polarization mode.

摘要翻译： 提供了用于选择性地执行不同偏振模式的振荡之一的振荡偏振模式选择半导体激光器。 半导体激光器包括衬底，形成在衬底上的激光器结构以及形成在激光器结构中的相移区域。 激光器结构包括其中通过电流注入建立体积反转的有源区域。 相移区域的至少一部分具有应变量子阱结构，其中由于电流注入而导致的不同偏振模式中的内部光的折射率变化的程度彼此不同。 可以通过注入到相移区域中的少量电流来改变从激光器输出的光的偏振模式，并且可以在偏振模式的转变操作期间抑制输出强度的波动。

公开(公告)号：US5757023A

公开(公告)日：1998-05-26

申请号：US787958

申请日：1997-01-23

申请人： Emil S. Koteles ,  Jian Jun He ,  Sylvain Charbonneau ,  Philip J. Poole

发明人： Emil S. Koteles ,  Jian Jun He ,  Sylvain Charbonneau ,  Philip J. Poole

IPC分类号： G02F1/017 ,  H01S5/34 ,  H01S5/50 ,  H01L29/06

CPC分类号： B82Y20/00 ,  G02F1/017 ,  H01S5/5009 ,  G02F2001/01766 ,  G02F2203/06 ,  H01S5/3404 ,  H01S5/3413 ,  H01S5/3414

摘要： An active semiconductor device that performs in a substantially polarization independent manner. A quantum well waveguide is intermixed by intermixing atoms across an interface between well and barrier layers. The atoms include at least 2 groups wherein intermixing of one group is at a substantially greater rate than another group. Cations are interdiffused at a greater rate than said anions across interfaces between well and barrier layers. The intermixing must be sufficient to provide strain within layers of the waveguide and sufficient to at least partially degenerate light hole and heavy hole bands of the structure. Preferably intermixing is sufficient to completely degenerate light hole and heavy hold bands to essentially produce a device that is completely polarization independent.

摘要翻译： 一种以基本上极化独立的方式执行的有源半导体器件。 量子阱波导通过在阱和阻挡层之间的界面上混合原子而混合。 这些原子包括至少2个基团，其中一个基团的混合速率比另一个基本上更大的速率。 阳离子在井和阻隔层之间的界面上以比所述阴离子更大的速率相互扩散。 混合必须足以在波导的层内提供应变，并且足以使结构的光孔和重孔带至少部分地退化。 优选地，混合足以使光孔和重保持带完全退化以基本上产生完全极化独立的装置。

公开(公告)号：US5465263A

公开(公告)日：1995-11-07

申请号：US332989

申请日：1994-11-04

申请人： David P. Bour ,  Thomas L. Paoli

发明人： David P. Bour ,  Thomas L. Paoli

IPC分类号： B41J2/45 ,  H01S5/34 ,  H01S5/343 ,  H01S5/40 ,  H01S3/10

CPC分类号： B82Y20/00 ,  B41J2/45 ,  H01S5/4025 ,  H01S2301/14 ,  H01S5/3404 ,  H01S5/34326 ,  H01S5/4043 ,  H01S5/4087

摘要： Structures and fabrication methods for achieving multiple wavelength, dual polarization laser diode arrays using single or multiple quantum well (QW) active regions that are able to support either TE-or TM-mode operation are described. Multiple wavelengths are obtained from either separate active regions, or by forcing a long-wavelength structure to oscillate at a short wavelength through bandfilling of the QW active region. By using tensile-strained QW active regions with or without separate confinement structures, multiple-wavelength dual-polarization lasers and laser arrays can be formed from a single active region.

摘要翻译： 描述了使用能够支持TE或TM模式操作的单个或多个量子阱（QW）有源区域来实现多波长双极化激光二极管阵列的结构和制造方法。 从单独的有源区域获得多个波长，或者通过迫使长波长结构通过QW有源区域的填充在短波长振荡。 通过使用具有或不具有单独约束结构的拉伸应变QW有源区，可以从单个有源区域形成多波长双极化激光器和激光阵列。

公开(公告)号：US5383211A

公开(公告)日：1995-01-17

申请号：US146758

申请日：1993-11-02

申请人： Chris Van de Walle ,  David P. Bour

发明人： Chris Van de Walle ,  David P. Bour

IPC分类号： H01S5/00 ,  H01S5/32 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343 ,  H01S3/10 ,  H01S3/18

CPC分类号： H01S5/3235 ,  B82Y20/00 ,  H01S5/32 ,  H01S2301/14 ,  H01S2301/145 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/32366 ,  H01S5/3404 ,  H01S5/34306

摘要： A semiconductor laser source using a strained active layer of InGaAsN, introduced by the addition of N in the alloy, to obtain semiconductor laser sources that emit TM-polarized light in the wavelength range above 850 nm. The presence of N in the alloy reduces the lattice constant and produces the desired strain effect, i.e., biaxial tension which raises the light hole band (yielding TM polarization) and produces a narrowing of the band gap. Adding In can reduce the strain in the alloy while maintaining the desired band gap and light-hole/heavy-hole ordering.

摘要翻译： 使用通过在合金中添加N引入的InGaAsN的应变有源层的半导体激光源，以获得在850nm以上的波长范围内发射TM偏振光的半导体激光源。 合金中的N的存在会降低晶格常数并产生所需的应变效应，即提高光空穴带（产生TM偏振）并产生带隙变窄的双轴张力。 添加In可以减少合金中的应变，同时保持所需的带隙和光孔/重孔排序。