公开(公告)号：US20140256122A1

公开(公告)日：2014-09-11

申请号：US13790783

申请日：2013-03-08

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Yi-Jiun Lee ,  Cheng-Hung Hu ,  Yh-Hsiu Hsiao ,  Kan Hwa Chang ,  Ming-Te Chen

IPC: H01J37/08 ,  H01L21/265 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01L21/26506

Abstract: Methods and apparatus for a carbon ion source head. An ionization chamber is configured to receive a process gas containing carbon and a noble carrier gas; a cathode is disposed in the ionization chamber and configured to emit electrons in thermionic emission; a graphite coating is provided on at least a portion of the cathode; and an outlet on the ionization chamber is configured to output carbon ions. A method for ion implantation of carbon is disclosed. Additional alternative embodiments are disclosed.

Abstract translation: 碳离子源头的方法和装置。 电离室构造成​​接收含有碳和贵重载气的工艺气体; 阴极设置在电离室中并且被配置为以热电子发射发射电子; 在阴极的至少一部分上提供石墨涂层; 并且电离室上的出口构造成输出碳离子。 公开了一种离子注入碳的方法。 公开了另外的替代实施例。

公开(公告)号：US12170327B2

公开(公告)日：2024-12-17

申请号：US17398668

申请日：2021-08-10

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Ming-Te Chen ,  Hui-Ting Tsai ,  Jun He ,  Kuo-Feng Yu ,  Chun Hsiung Tsai

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/78

Abstract: A semiconductor structure, a method for manufacturing a FinFET structure and a method for manufacturing a semiconductor structure are provided. The method for forming a FinFET structure includes: providing a FinFET precursor including a plurality of fins and a plurality of gate trenches between the fins; forming a first portion of the trench dummy of a dummy gate within the plurality of gate trenches; removing at least a part of the first portion of the trench dummy; forming a second portion of the trench dummy over the first portion of the trench dummy; performing a first thermal treatment to the first and second portions of the trench dummy; and forming a blanket dummy of the dummy gate over the second portion of the trench dummy. The present disclosure further provides a FinFET structure with an improved metal gate.

公开(公告)号：US11978675B2

公开(公告)日：2024-05-07

申请号：US17532852

申请日：2021-11-22

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chandrashekhar Prakash Savant ,  Chia-Ming Tsai ,  Ming-Te Chen ,  Tien-Wei Yu

IPC: H01L21/8234 ,  H01L21/8238 ,  H01L27/092

CPC classification number: H01L21/823842 ,  H01L21/823807 ,  H01L27/092

Abstract: A semiconductor device includes a gate structure disposed over a channel region, and a source/drain region. The gate structure includes a gate dielectric layer over the channel region, a first work function adjustment layer, over the gate dielectric layer, a first shield layer over the first work function adjustment layer, a first barrier layer, and a metal gate electrode layer. The first work function adjustment layer is made up of n-type work function adjustment layer and includes aluminum. The first shield layer is made of at least one selected from the group consisting of metal, metal nitride, metal carbide, silicide, a layer containing one or more of F, Ga, In, Zr, Mn and Sn, and an aluminum containing layer having a lower aluminum concentration than the first work function adjustment layer.

公开(公告)号：US20170247790A1

公开(公告)日：2017-08-31

申请号：US15597377

申请日：2017-05-17

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Tsun-Jen Chan ,  Cheng-Hung Hu ,  Yi-Hann Chen ,  Kang Hua Chang ,  Ming-Te Chen

IPC: C23C14/54 ,  H01J37/317 ,  H01L21/265 ,  H01L21/677 ,  H01L21/67

CPC classification number: C23C14/54 ,  H01J37/3171 ,  H01J2237/31701 ,  H01L21/265 ,  H01L21/26593 ,  H01L21/67115 ,  H01L21/67201 ,  H01L21/67213 ,  H01L21/67745

Abstract: A system includes an implantation chamber; a warming chamber, wherein the warming chamber is outside of the implantation chamber and has a sidewall shared with the implantation chamber; a first robotic arm configured to move a first wafer from the implantation chamber into the warming chamber; and a second robotic arm configured to move a second wafer into the implantation chamber.

公开(公告)号：US09663854B2

公开(公告)日：2017-05-30

申请号：US14205299

申请日：2014-03-11

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Tsun-Jen Chan ,  Cheng-Hung Hu ,  Yi-Hann Chen ,  Kang Hua Chang ,  Ming-Te Chen

IPC: H01L21/265 ,  C23C14/54 ,  H01J37/317 ,  H01L21/67 ,  H01L21/677

CPC classification number: C23C14/54 ,  H01J37/3171 ,  H01J2237/31701 ,  H01L21/265 ,  H01L21/26593 ,  H01L21/67115 ,  H01L21/67201 ,  H01L21/67213 ,  H01L21/67745

Abstract: A high throughput system for warming a wafer to a desired temperature after undergoing a low-temperature implantation process includes an implantation chamber, a wafer warming chamber configured to uniformly warm a single wafer, and a plurality of robotic arms to transfer wafers throughout the system. At each stage in the fabrication process, the robotic arms simultaneously work with multiple wafers and, therefore, the system provides a high throughput process. Also, the warming chamber may be a vacuum environment, thus eliminating the mist-condensation problem that results in wafer spotting.

公开(公告)号：US09512519B2

公开(公告)日：2016-12-06

申请号：US13692972

申请日：2012-12-03

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chia-Yi Chuang ,  Hsing-Jui Lee ,  Ming-Te Chen

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C30B25/14 ,  C30B31/16 ,  H01J37/32 ,  H01L21/02 ,  H01L21/314

CPC classification number: C23C16/45527 ,  C23C16/455 ,  C23C16/45544 ,  C23C16/45546 ,  C23C16/45548 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/4583 ,  C23C16/46 ,  C30B25/14 ,  C30B31/16 ,  H01J37/3244 ,  H01L21/0228 ,  H01L21/3141

Abstract: An atomic layer deposition apparatus includes a chamber including a plurality of regions; and a heating device respectively providing specific temperature ranges for the plurality of regions.

Abstract translation: 原子层沉积装置包括具有多个区域的室; 以及分别为多个区域提供特定温度范围的加热装置。

公开(公告)号：US20150155352A1

公开(公告)日：2015-06-04

申请号：US14621245

申请日：2015-02-12

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chia-Yi Chuang ,  Ta-Hsiang Kung ,  Hsing-Jui Lee ,  Ming-Te Chen

IPC: H01L29/06

CPC classification number: H01L29/0649 ,  H01L21/76224

Abstract: Embodiments of the disclosure include a shallow trench isolation (STI) structure and a method of forming the same. A trench is formed in a substrate. A silicon oxide and a silicon liner layer are formed on sidewalls and a bottom surface of the trench. A flowable silicon oxide material fills in the trench, is cured, and then is partially removed. Another silicon oxide is deposited in the trench to fill the trench. The STI structure in a fabricated device includes a bottom portion having silicon oxide and a top portion having additionally a silicon oxide liner and a silicon liner on the sidewalls.