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    Method of fabricating an integrated circuit device
    21.
    发明授权
    Method of fabricating an integrated circuit device 有权
    制造集成电路器件的方法

    公开(公告)号：US09564509B2

    公开(公告)日：2017-02-07

    申请号：US14552630

    申请日：2014-11-25

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

    Inventor： Ming-Hsi Yeh ,  Hsien-Hsin Lin ,  Ying-Hsueh Chang Chien ,  Yi-Fang Pai ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    IPC: H01L29/66 ,  H01L21/8238

    CPC classification number: H01L29/665 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  Y10S438/976

    Abstract: A method of fabricating an integrated circuit device includes forming a first gate structure in a first region of a substrate and a second gate structure in a second region of the substrate. The method includes forming a protective layer overlying the first and the second gate structures. The method includes removing a portion of the protective layer over the second gate structure. The method includes forming features adjacent to the second gate structure. The method further includes forming a spacer over at least a portion of the features adjacent to the second gate structure, wherein the features separate the spacer from the substrate adjacent to the second gate structure. The method includes removing the second portion of the protective layer. Removing the second portion of the protective layer includes forming a protector over the second gate structure; and performing an etching process using a chemical comprising hydrofluoric acid (HF).

    Abstract translation: 一种制造集成电路器件的方法包括在衬底的第一区域中形成第一栅极结构，在衬底的第二区域中形成第二栅极结构。 该方法包括形成覆盖第一和第二栅极结构的保护层。 该方法包括在第二栅极结构上去除保护层的一部分。 该方法包括形成与第二栅极结构相邻的特征。 该方法还包括在与第二栅极结构相邻的特征的至少一部分上形成间隔物，其中特征将间隔物与邻近第二栅极结构的衬底分开。 该方法包括去除保护层的第二部分。 去除保护层的第二部分包括在第二栅极结构上形成保护器; 以及使用包含氢氟酸（HF）的化学品进行蚀刻工艺。

    Beam Monitoring Device, Method, and System
    22.
    发明申请
    Beam Monitoring Device, Method, and System 有权
    光束监测装置，方法和系统

    公开(公告)号：US20140306119A1

    公开(公告)日：2014-10-16

    申请号：US14317650

    申请日：2014-06-27

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

    Inventor： Chih-Hong Hwang ,  Chun-Lin Chang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    IPC: H01J37/244

    CPC classification number: H01J37/244 ,  H01J37/3171 ,  H01J2237/024 ,  H01J2237/24405 ,  H01J2237/24528 ,  H01J2237/24542

    Abstract: A beam monitoring device, method, and system is disclosed. An exemplary beam monitoring device includes a one dimensional (1D) profiler. The 1D profiler includes a Faraday having an insulation material and a conductive material. The beam monitoring device further includes a two dimensional (2D) profiler. The 2D profiler includes a plurality of Faraday having an insulation material and a conductive material. The plurality of Faraday of the 2D profiler are arranged in a pattern that is offset in a direction. The 1D profiler is coupled to a first end of the 2D profiler and extends beyond two adjacent outer edges of the 2D profiler. The beam monitoring device further includes a control arm. The control arm is operable to facilitate movement of the beam monitoring device in the direction.

    Abstract translation: 公开了一种光束监测装置，方法和系统。 示例性束监测装置包括一维（1D）轮廓仪。 1D轮廓仪包括具有绝缘材料和导电材料的法拉第。 光束监测装置还包括二维（2D）轮廓仪。 2D轮廓仪包括具有绝缘材料和导电材料的多个法拉第。 2D轮廓仪的多个法拉第以一个方向偏移的图案排列。 1D轮廓仪耦合到2D轮廓仪的第一端并延伸超过2D轮廓仪的两个相邻的外边缘。 光束监视装置还包括控制臂。 控制臂可操作以便于沿着该方向的光束监视装置的移动。

    FINLIKE STRUCTURES AND METHODS OF MAKING SAME
    23.
    发明申请
    FINLIKE STRUCTURES AND METHODS OF MAKING SAME 有权
    FINLIKE结构及其制造方法

    公开(公告)号：US20140024187A1

    公开(公告)日：2014-01-23

    申请号：US14030518

    申请日：2013-09-18

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Ming-Hsi Yeh ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    IPC: H01L29/66

    CPC classification number: H01L29/66818 ,  H01L29/66795

    Abstract: Semiconductor materials, particularly III-V materials used to form, e.g., a finlike structure can suffer structural damage during chemical mechanical polishing steps. This damage can be reduced or eliminated by oxidizing the damaged surface of the material and then etching away the oxidized material. The etching step can be accomplished simultaneously with a step of etching back a patterned oxide layers, such as a shallow trench isolation layer.

    Abstract translation: 用于形成例如鳍状结构的半导体材料，特别是III-V材料可能在化学机械抛光步骤期间遭受结构损坏。 可以通过氧化材料损坏的表面，然后蚀刻掉氧化的材料来减少或消除这种损伤。 蚀刻步骤可以与蚀刻回图案化氧化物层（例如浅沟槽隔离层）的步骤同时完成。

    Apparatus for Monitoring Ion Implantation
    24.
    发明申请
    Apparatus for Monitoring Ion Implantation 审中-公开
    监测离子注入的装置

    公开(公告)号：US20130280823A1

    公开(公告)日：2013-10-24

    申请号：US13918731

    申请日：2013-06-14

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Chun-Lin Chang ,  Chih-Hong Hwang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    IPC: H01L21/66

    CPC classification number: H01L22/10 ,  H01J37/244 ,  H01J37/3171 ,  H01J2237/24542 ,  H01J2237/30455 ,  H01J2237/31703 ,  H01L21/265

    Abstract: An apparatus for monitoring an ion distribution of a wafer comprises a first sensor and a sensor. The first sensor, the second senor and the wafer are placed in an effective range of a uniform ion implantation current profile. A controller determines the ion dose of each region of the wafer based upon the detected signal from the first sensor and the second senor. In addition, the controller adjusts the scanning frequency of an ion beam or the movement speed of the wafer to achieve a uniform ion distribution on the wafer.

    Abstract translation: 用于监测晶片的离子分布的装置包括第一传感器和传感器。 将第一传感器，第二传感器和晶片放置在均匀离子注入电流分布的有效范围内。 控制器基于来自第一传感器和第二传感器的检测信号确定晶片的每个区域的离子剂量。 此外，控制器调节离子束的扫描频率或晶片的移动速度，以在晶片上实现均匀的离子分布。

    PELLICLE AND METHOD FOR MANUFACTURING THE SAME
    30.
    发明申请
    PELLICLE AND METHOD FOR MANUFACTURING THE SAME 有权

    公开(公告)号：US20170205705A1

    公开(公告)日：2017-07-20

    申请号：US14996966

    申请日：2016-01-15

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

    Inventor： Jeng-Shin Ma ,  Tsiao-Chen Wu ,  Chi-Ming Yang ,  Chyi Shyuan Chern ,  Chih-Cheng Lin ,  Yun-Yue Lin

    IPC: G03F1/64

    CPC classification number: G03F1/64 ,  G03F1/62

    Abstract: A method for manufacturing a pellicle includes: providing a supporting substrate; forming an oxide layer over the supporting substrate; forming a metal layer over the oxide layer; forming a graphene layer over the metal layer; and removing at least a portion of the supporting substrate and the oxide layer. An associated method includes: providing a supporting substrate; forming a first silicon carbide (SiC) layer or a diamond layer over the supporting substrate; forming a graphene layer over the SiC layer or the diamond layer; and removing at least a portion of the supporting substrate and the first silicon carbide (SiC) layer or the diamond layer; wherein the pellicle is at least partially transparent to extreme ultraviolet (EUV) radiation. An associated pellicle is also disclosed.

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