公开(公告)号：US11898244B2

公开(公告)日：2024-02-13

申请号：US17497523

申请日：2021-10-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jooho Lee ,  Yongsung Kim ,  Sanghoon Song ,  Wooyoung Yang ,  Changseung Lee ,  Sungjin Lim ,  Junsik Hwang

IPC: C23C16/34 ,  C23C16/50 ,  C23C16/06 ,  C23C16/44 ,  H01M4/04 ,  H01M10/052 ,  H01J37/32 ,  H01M16/00 ,  C23C16/00

CPC classification number: C23C16/34 ,  C23C16/00 ,  C23C16/06 ,  C23C16/4408 ,  C23C16/50 ,  H01J37/32 ,  H01J37/3244 ,  H01M4/0428 ,  H01M10/052 ,  H01M16/00 ,  H01J2237/3321 ,  H01M2220/30 ,  H01M2300/0068

Abstract: A method of forming a lithium (Li)-based film, may include: supplying a Li source material into a reaction chamber in which a substrate is disposed; supplying phosphor (P) and oxygen (O) source materials and a nitrogen (N) source material into the reaction chamber; and generating plasma in the reaction chamber to form a Li-based film on the substrate from the Li, P, O, and N source materials, wherein the supplying of the Li source material into the reaction chamber and the supplying of the P and O source materials and the N source material into the reaction chamber are performed with a time interval, and wherein the Li source material supplied into the reaction chamber is deposited on the substrate, and the P and O source materials supplied into the reaction chamber are adsorbed on the Li source material.

公开(公告)号：US11658024B2

公开(公告)日：2023-05-23

申请号：US17071310

申请日：2020-10-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggyu Song ,  Kyooho Jung ,  Yongsung Kim ,  Jeongil Bang ,  Jooho Lee ,  Junghwa Kim ,  Haeryong Kim ,  Myoungho Jeong

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L21/768

CPC classification number: H01L21/02181 ,  H01L21/0245 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/02403 ,  H01L21/02472 ,  H01L21/02667 ,  H01L21/76871 ,  H01L29/66969 ,  H01L29/7869

Abstract: A semiconductor device and a method of manufacturing the semiconductor device are included. The method of manufacturing the semiconductor device includes forming a hafnium oxide layer on a substrate and crystallizing the hafnium oxide layer by using a hafnium cobalt oxide layer as a seed layer. According to the method of manufacturing the semiconductor device, a thin-film hafnium oxide layer may be easily crystallized.

公开(公告)号：US11650597B2

公开(公告)日：2023-05-16

申请号：US16922655

申请日：2020-07-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Daehyun Ban ,  Yongsung Kim ,  Chanju Park ,  Chanwon Seo ,  Hongpyo Lee

IPC: G05D1/02 ,  G05D1/00 ,  G06T3/00 ,  G06T7/73 ,  G06V20/10

CPC classification number: G05D1/0246 ,  G05D1/0088 ,  G06T3/0093 ,  G06T7/74 ,  G06V20/10 ,  G05D2201/0203 ,  G06T2207/20081

Abstract: An electronic apparatus is provided. The electronic apparatus includes: a sensor; a camera; a memory; and a processor configured to be connected to the sensor, the camera, and the memory. The memory includes an artificial intelligence model trained to identify at least one object. The processor is further configured to: detect an object based on sensing data received from the sensor; based on the detected object being identified as having a height less than a predetermined threshold value, warp an object region, including the detected object, in an image acquired through the camera based on distance information of the object region; and identify the detected object by inputting the warped object region into the artificial intelligence model.

公开(公告)号：US11514650B2

公开(公告)日：2022-11-29

申请号：US17080296

申请日：2020-10-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongsung Kim ,  Daehyun Ban ,  Dongwan Lee ,  Hongpyo Lee ,  Lei Zhang

IPC: G06T19/00 ,  G06K9/00 ,  G06T7/50 ,  G06K9/62 ,  G06T7/70 ,  G06N3/08 ,  G06V40/10

Abstract: An electronic apparatus is provided. The electronic apparatus includes a display, a camera configured to capture a rear of the electronic apparatus facing a front of the electronic apparatus in which the display displays an image, and a processor configured to render a virtual object based on the image captured by the camera, based on a user body being detected from the captured image, estimate a plurality of joint coordinates with respect to the detected user body using a pre-trained learning model, generate an augmented reality image using the estimated plurality of joint coordinates, the rendered virtual object, and the captured image, and control the display to display the generated augmented reality image, wherein the processor is configured to identify whether the user body touches the virtual object based on the plurality of estimated joint coordinates, and change a transmittance of the virtual object based on the touch being identified.

公开(公告)号：US11257899B2

公开(公告)日：2022-02-22

申请号：US16895362

申请日：2020-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Haeryong Kim ,  Jungmin Park ,  Yongsung Kim ,  Jooho Lee

IPC: H01L49/02 ,  H01L29/78 ,  H01L21/02 ,  H01L27/108 ,  H01L29/51

Abstract: Provided are a film structure including hafnium oxide, an electronic device including the same, and a method of manufacturing the same. The film structure including hafnium oxide includes a hafnium oxide layer including hafnium oxide crystallized in a tetragonal phase, and first and second stressor layers apart from each other with the hafnium oxide layer therebetween and applying compressive stress to the hafnium oxide layer.

公开(公告)号：US20210043749A1

公开(公告)日：2021-02-11

申请号：US16779863

申请日：2020-02-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woojin Lee ,  Kiyoung Lee ,  Yongsung Kim ,  Eunsun Kim

IPC: H01L29/51 ,  H01L27/11585 ,  H01L27/11502 ,  C01G23/00 ,  C01G35/00

Abstract: A thin film structure including a dielectric material layer and an electronic device to which the thin film structure is applied are provided. The dielectric material layer includes a compound expressed by ABO3, wherein at least one of A and B in ABO3 is substituted and doped with another atom having a larger atom radius, and ABO3 becomes A1−xA′xB1−yB′yO3 (where x>=0, y>=0, at least one of x and y≠0, a dopant A′ has an atom radius greater than A and/or a dopant B′ has an atom radius greater than B) through substitution and doping. A dielectric material property of the dielectric material layer varies according to a type of a substituted and doped dopant and a substitution doping concentration.

公开(公告)号：US09722068B2

公开(公告)日：2017-08-01

申请号：US15026681

申请日：2014-09-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Xianyu Wenxu ,  Yongsung Kim ,  Changyoul Moon ,  Yongyoung Park ,  Wooyoung Yang ,  Jeongyub Lee ,  Jooho Lee

IPC: H01L29/78 ,  H01L29/45 ,  H01L29/66 ,  H01L29/778 ,  H01L29/06 ,  H01L29/16 ,  H01L21/306 ,  H01L21/3105 ,  H01L29/08 ,  H01L29/10 ,  H01L29/24 ,  H01L29/423 ,  H01L29/47

CPC classification number: H01L29/78 ,  H01L21/30625 ,  H01L21/31051 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/42364 ,  H01L29/4238 ,  H01L29/45 ,  H01L29/47 ,  H01L29/66045 ,  H01L29/7781

Abstract: Provided are semiconductor devices and methods of manufacturing the same. A semiconductor device may include a source, a drain, a semiconductor element between the source and the drain, and a graphene layer that is provided on the source and the semiconductor element and is spaced apart from the drain. Surfaces of the source and the drain are substantially co-planar with a surface of the semiconductor element. The semiconductor element may be spaced apart from the source and may contact the drain. The graphene layer may have a planar structure. A gate insulating layer and a gate may be provided on the graphene layer. The semiconductor device may be a transistor. The semiconductor device may have a barristor structure. The semiconductor device may be a planar type graphene barristor.

公开(公告)号：US20170207275A1

公开(公告)日：2017-07-20

申请号：US15409656

申请日：2017-01-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Heo ,  Kyu Sik Kim ,  Nam Jeong Kim ,  Seong Heon KIM ,  Yongsung Kim ,  Eunae Cho ,  Takkyun Ro ,  Dongjin Yun ,  Yongsu Kim ,  Wenxu Xianyu ,  Yong-Young Park ,  Kyung Bae Park

IPC: H01L27/30 ,  H01L51/56 ,  H01L51/52 ,  H01L27/146 ,  H01L51/44 ,  H01L51/50

CPC classification number: H01L27/307 ,  H01L27/14621 ,  H01L27/14643 ,  H01L27/14665 ,  H01L27/301 ,  H01L51/42 ,  H01L51/441 ,  H01L51/448 ,  H01L51/5088 ,  H01L51/5092 ,  H01L51/5096 ,  H01L51/5203 ,  H01L51/56 ,  H01L2251/301 ,  H01L2251/552 ,  Y02E10/549

Abstract: An optoelectronic device includes a first electrode and a second electrode facing each other a photoelectric conversion layer between the first electrode and the second electrode and a buffer layer between the photoelectric conversion layer and the second electrode. The buffer layer includes a nitride. The nitride includes one of silicon nitride (SiNx, 0

公开(公告)号：US12215853B2

公开(公告)日：2025-02-04

申请号：US18597336

申请日：2024-03-06

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Yeoreum Yoon ,  Byoungho Lee ,  Hanjin Cho ,  Yongsung Kim ,  Taeeun Kim ,  Siwoo Lee ,  Jiyong Jang

IPC: F21V5/00 ,  F21V19/00 ,  F21Y115/10 ,  G01B11/24

Abstract: A method of designing an optical system including a dome light and coaxial light, includes: determining a distance between the dome light and the coaxial light based on a radius reduction according to a hole of the dome light; determining a size of the coaxial light based on an optical path of a light ray emitted from the coaxial light; and determining a structure of a printed circuit board (PCB) in the dome light based on an optical path through which the light ray emitted from the coaxial light is reflected by an object.

公开(公告)号：US12071690B2

公开(公告)日：2024-08-27

申请号：US16827895

申请日：2020-03-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Narae Han ,  Jeonggyu Song ,  Yongsung Kim ,  Jooho Lee

IPC: C23C16/56 ,  C01F7/02 ,  C01G15/00 ,  C01G25/02 ,  C01G27/02 ,  C23C14/08 ,  C23C14/58 ,  C23C16/40 ,  C23C16/455 ,  H10B12/00 ,  H10B53/00

CPC classification number: C23C16/56 ,  C01F7/02 ,  C01G15/00 ,  C01G25/02 ,  C01G27/02 ,  C23C14/08 ,  C23C14/081 ,  C23C14/5806 ,  C23C16/40 ,  C23C16/403 ,  C23C16/45525 ,  H10B12/00 ,  H10B53/00 ,  C01P2006/40

Abstract: A thin film structure including a dielectric material layer, a method of manufacturing the same, and an electronic device employing the same are disclosed. The disclosed thin film structure includes a first conductive layer; a first dielectric material layer on the first conductive layer, the first dielectric material layer having a crystal phase and including a metal oxide; an InxOy-based seed material layer formed on the first dielectric material layer and having a thickness less than a thickness of the first dielectric material layer; and a second conductive layer formed on the seed material layer.