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    METHOD AND SYSTEM FOR PROVIDING MAGNETIC TUNNELING JUNCTION ELEMENTS HAVING IMPROVED PERFORMANCE THROUGH CAPPING LAYER INDUCED PERPENDICULAR ANISOTROPY AND MEMORIES USING SUCH MAGNETIC ELEMENTS
    21.
    发明申请
    METHOD AND SYSTEM FOR PROVIDING MAGNETIC TUNNELING JUNCTION ELEMENTS HAVING IMPROVED PERFORMANCE THROUGH CAPPING LAYER INDUCED PERPENDICULAR ANISOTROPY AND MEMORIES USING SUCH MAGNETIC ELEMENTS 有权
    用于提供具有通过覆盖层改善的性能的磁性隧道结构元件的方法和系统使用这种磁性元件诱导的各向异性和记忆

    公开(公告)号：US20140151829A1

    公开(公告)日：2014-06-05

    申请号：US14176310

    申请日：2014-02-10

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Steven M. Watts ,  Zhitao Diao ,  Xueti Tang

    IPC: H01L27/22 ,  H01L43/12

    CPC classification number: H01L27/224 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/5607 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/307 ,  H01F41/34 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

    Abstract: A magnetic element and a magnetic memory utilizing the magnetic element are described. A contact is electrically coupled to the magnetic element. The magnetic element includes pinned, nonmagnetic spacer, and free layers and a perpendicular capping layer adjoining the free layer and the contact. The free layer has an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy corresponding to a perpendicular anisotropy energy that is less than the out-of-plane demagnetization energy. The nonmagnetic spacer layer is between the pinned and free layers. The perpendicular capping layer induces at least part of the perpendicular magnetic anisotropy. The free layer is switchable between magnetic states when a write current is passed through the magnetic element. The free layer includes ferromagnetic layers interleaved with capping layer(s) such that a ferromagnetic layer resides at an edge of the free layer. The capping layer(s) are configured such that the ferromagnetic layers are ferromagnetically coupled.

    Abstract translation: 描述了利用磁性元件的磁性元件和磁性存储器。 触点电耦合到磁性元件。 磁性元件包括固定的，非磁性的间隔物，以及与自由层和触点相邻的自由层和垂直的覆盖层。 自由层具有对应于小于面外去磁能的垂直各向异性能的平面退磁能和垂直磁各向异性。 非磁性间隔层位于被钉扎层和自由层之间。 垂直覆盖层引起至少部分垂直磁各向异性。 当写入电流通过磁性元件时，自由层可以在磁状态之间切换。 自由层包括与封盖层交错的铁磁层，使得铁磁层位于自由层的边缘。 覆盖层被构造成使得铁磁层被铁磁耦合。

    Method and system for providing magnetic junctions utilizing oxygen blocking, oxygen adsorber and tuning layer(s)
    22.
    发明授权
    Method and system for providing magnetic junctions utilizing oxygen blocking, oxygen adsorber and tuning layer(s) 有权

    公开(公告)号：US11063209B2

    公开(公告)日：2021-07-13

    申请号：US15659605

    申请日：2017-07-25

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Xueti Tang ,  Gen Feng ,  Mohamad Towfik Krounbi

    IPC: H01L43/08 ,  H01L43/02 ,  H01L27/22 ,  H01L43/12

    Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction resides on a substrate and is usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, a free layer, an oxide layer and at least one oxygen blocking layer. The free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. The nonmagnetic spacer layer is between the pinned layer and the free layer. The oxide layer is adjacent to the free layer. The free layer is between the nonmagnetic spacer layer and the oxide layer. The oxygen blocking layer(s) has a position selected from adjacent to the oxide layer and adjacent to the pinned layer. In some aspects, the magnetic junction may also include an oxygen adsorber layer and/or a tuning layer.

    Method and system for providing magnetic junctions including free layers that are cobalt-free
    28.
    发明授权
    Method and system for providing magnetic junctions including free layers that are cobalt-free 有权
    提供包括无钴的自由层的磁连接的方法和系统

    公开(公告)号：US09559143B2

    公开(公告)日：2017-01-31

    申请号：US14977094

    申请日：2015-12-21

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Xueti Tang ,  Jang-Eun Lee ,  Gen Feng ,  Dustin William Erickson

    IPC: H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L27/22 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

    CPC classification number: H01L27/222 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a nonmagnetic spacer layer, and a reference layer. The free layer includes at least one of Fe and at least one Fe alloy. Furthermore, the free layer excludes Co. The nonmagnetic spacer layer adjoins the free layer. The nonmagnetic spacer layer residing between reference layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

    Abstract translation: 描述了可用于磁性装置的磁结和提供磁结的方法。 磁结包括自由层，非磁性间隔层和参考层。 自由层包括Fe和至少一种Fe合金中的至少一种。 此外，自由层不包括Co.非磁性间隔层邻接自由层。 位于参考层和自由层之间的非磁性间隔层。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。

    METHOD AND SYSTEM FOR PROVIDING A BOTTOM PINNED LAYER IN A PERPENDICULAR MAGNETIC JUNCTION USABLE IN SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY APPLICATIONS
    29.
    发明申请
    METHOD AND SYSTEM FOR PROVIDING A BOTTOM PINNED LAYER IN A PERPENDICULAR MAGNETIC JUNCTION USABLE IN SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY APPLICATIONS 有权
    用于在旋转传动扭矩磁性随机存取存储器应用中可用的全能磁性接头中提供底部引线层的方法和系统

    公开(公告)号：US20160197267A1

    公开(公告)日：2016-07-07

    申请号：US14977145

    申请日：2015-12-21

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Xueti Tang ,  Dustin William Erickson ,  Jang-Eun Lee

    IPC: H01L43/08 ,  H01L27/22 ,  G11C11/16 ,  H01L43/10 ,  H01L43/12 ,  H01L43/02

    CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/222 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

    Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The pinned layer has a perpendicular magnetic anisotropy (PMA) energy greater than its out-of-plane demagnetization energy. Providing the pinned layer includes providing a bulk PMA (B-PMA) layer, providing an interfacial PMA (I-PMA) layer on the B-PMA layer and then providing a sacrificial layer that is a sink for a constituent of the first I-PMA layer. An anneal is then performed. The sacrificial layer and part of the first I-PMA layer are removed after the anneal. Additional I-PMA layer(s) are provided after the removing. A remaining part of the first I-PMA layer and the additional I-PMA layer(s) have a thickness of not more than twenty Angstroms.

    Abstract translation: 描述了用于提供磁结的磁结和方法。 磁结包括由非磁性间隔层隔开的自由和固定层。 当写入电流通过磁结时，自由层可在稳定的磁状态之间切换。 钉扎层具有大于其平面外退磁能的垂直磁各向异性（PMA）能量。 提供被钉扎层包括提供大块PMA（B-PMA）层，在B-PMA层上提供界面PMA（I-PMA）层，然后提供牺牲层，其为第一I- PMA层。 然后进行退火。 在退火之后去除牺牲层和第一I-PMA层的一部分。 在除去后提供额外的I-PMA层。 第一I-PMA层和附加的I-PMA层的剩余部分的厚度不超过二十埃。

    Dual perpendicular magnetic anisotropy magnetic junction usable in spin transfer torque magnetic random access memory applications
    30.
    发明授权
    Dual perpendicular magnetic anisotropy magnetic junction usable in spin transfer torque magnetic random access memory applications 有权
    双垂直磁各向异性磁结可用于自旋转移磁性随机存取存储器应用

    公开(公告)号：US09373781B2

    公开(公告)日：2016-06-21

    申请号：US14184684

    申请日：2014-02-19

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Xueti Tang ,  Jang Eun Lee

    IPC: H01L43/12 ,  H01L43/08 ,  H01L27/22 ,  G11C11/16 ,  G11B5/39

    CPC classification number: H01L43/12 ,  G11B2005/3996 ,  G11C11/16 ,  G11C11/161 ,  H01L27/226 ,  H01L43/08 ,  Y10T29/49034

    Abstract: A method for providing a dual magnetic junction usable in a magnetic device and the dual magnetic junction are described. First and second nonmagnetic spacer layers, a free layer and pinned are provided. The first pinned layer, free layer and nonmagnetic spacer layer may be annealed at an anneal temperature of at least three hundred fifty degrees Celsius before a second pinned layer is provided. The second pinned layer may include Co, Fe and Tb. The nonmagnetic spacer layers are between the pinned layers and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

    Abstract translation: 描述了一种用于提供可用于磁性装置和双重磁性结的双重磁性结的方法。 第一和第二非磁性间隔层，提供自由层和钉扎。 在提供第二被钉扎层之前，可以在至少三百五十摄氏度的退火温度下退火第一被钉扎层，自由层和非磁性间隔层。 第二被钉扎层可以包括Co，Fe和Tb。 非磁性间隔层位于钉扎层和自由层之间。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。

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