公开(公告)号：US10121961B2

公开(公告)日：2018-11-06

申请号：US15479653

申请日：2017-04-05

Applicant: Samsung Electronics Co., LTD.

Inventor： Dmytro Apalkov ,  Xueti Tang ,  Hong-Sik Jung ,  Roman Chepulskyy

IPC: H01L21/00 ,  H01L43/08 ,  H01F10/32 ,  H01F10/12 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic memory including a plurality of magnetic junctions and at least one spin-orbit interaction (SO) active layer is described. Each of the magnetic junctions includes a pinned layer, a free layer and a nonmagnetic spacer layer between reference and free layers. The free layer has at least one of a tilted easy axis and a high damping constant. The tilted easy axis is at a nonzero acute angle from a direction perpendicular-to-plane. The high damping constant is at least 0.02. The at least one SO active layer is adjacent to the free layer and carries a current in-plane. The at least one SO active layer exerts a SO torque on the free layer due to the current. The free layer is switchable using the SO torque.

公开(公告)号：US10431275B2

公开(公告)日：2019-10-01

申请号：US15979311

申请日：2018-05-14

Applicant: Samsung Electronics Co., LTD.

Inventor： Hong-Sik Jung ,  Xueti Tang

IPC: G11C11/00 ,  G11C11/16 ,  H01L43/12 ,  H01L27/22 ,  H01L43/10 ,  H01L43/02

Abstract: A magnetic apparatus, a memory using the magnetic apparatus and method for providing the magnetic apparatus are described. The magnetic apparatus includes a magnetic junction and a hybrid capping layer adjacent to the magnetic junction. The hybrid capping layer includes an insulating layer, a discontinuous oxide layer, and a noble metal layer. The discontinuous oxide layer is between the insulating layer and the noble metal layer. The insulating layer is between the magnetic junction and the noble metal layer. In one aspect, the magnetic junction includes a reference layer, a nonmagnetic spacer layer that may be a tunneling barrier layer and a free layer.

公开(公告)号：US20190272863A1

公开(公告)日：2019-09-05

申请号：US15979311

申请日：2018-05-14

Applicant: Samsung Electronics Co., LTD.

Inventor： Hong-Sik Jung ,  Xueti Tang

IPC: G11C11/16 ,  H01L43/12 ,  H01L43/02 ,  H01L43/10 ,  H01L27/22

Abstract: A magnetic apparatus, a memory using the magnetic apparatus and method for providing the magnetic apparatus are described. The magnetic apparatus includes a magnetic junction and a hybrid capping layer adjacent to the magnetic junction. The hybrid capping layer includes an insulating layer, a discontinuous oxide layer, and a noble metal layer. The discontinuous oxide layer is between the insulating layer and the noble metal layer. The insulating layer is between the magnetic junction and the noble metal layer. In one aspect, the magnetic junction includes a reference layer, a nonmagnetic spacer layer that may be a tunneling barrier layer and a free layer.

公开(公告)号：US20180219152A1

公开(公告)日：2018-08-02

申请号：US15479653

申请日：2017-04-05

Applicant: Samsung Electronics Co., LTD.

Inventor： Dmytro Apalkov ,  Xueti Tang ,  Hong-Sik Jung ,  Roman Chepulskyy

IPC: H01L43/08 ,  H01F10/32 ,  H01F10/12 ,  H01L43/10 ,  H01L43/12

CPC classification number: H01L43/08 ,  H01F10/123 ,  H01F10/126 ,  H01F10/324 ,  H01F10/3286 ,  H01F10/329 ,  H01F41/303 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic memory including a plurality of magnetic junctions and at least one spin-orbit interaction (SO) active layer is described. Each of the magnetic junctions includes a pinned layer, a free layer and a nonmagnetic spacer layer between reference and free layers. The free layer has at least one of a tilted easy axis and a high damping constant. The tilted easy axis is at a nonzero acute angle from a direction perpendicular-to-plane. The high damping constant is at least 0.02. The at least one SO active layer is adjacent to the free layer and carries a current in-plane. The at least one SO active layer exerts a SO torque on the free layer due to the current. The free layer is switchable using the SO torque.