公开(公告)号：US20180197589A1

公开(公告)日：2018-07-12

申请号：US15903926

申请日：2018-02-23

Applicant: Samsung Electronics Co., LTD.

Inventor： Xueti Tang ,  Dmytro Apalkov ,  Gen Feng ,  Mohamad Towfik Krounbi

IPC: G11C11/16 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12

CPC classification number: G11C11/161 ,  G11C11/1675 ,  H01L27/222 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic device and method for providing the magnetic device are described. The magnetic device includes magnetic junctions and spin-orbit interaction (SO) active layer(s). Each magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The pinned layer has a perpendicular magnetic anisotropy (PMA) energy greater than an out-of-plane demagnetization energy. The pinned layer includes a magnetic barrier layer between a magnetic layer and a high PMA layer including at least one nonmagnetic component. The magnetic barrier layer includes Co and at least one of Ta, W and Mo. The magnetic barrier layer is for blocking diffusion of the nonmagnetic component. The SO active layer(s) are adjacent to the free layer. The SO active layer(s) carry a current in-plane and exert a SO torque on the free layer due to the current. The free layer is switchable between stable magnetic states using the SO torque.

公开(公告)号：US09917249B2

公开(公告)日：2018-03-13

申请号：US15177138

申请日：2016-06-08

Applicant: Samsung Electronics Co., LTD.

Inventor： Xueti Tang ,  Dmytro Apalkov ,  Gen Feng ,  Mohamad Towfik Krounbi

IPC: H01L27/22 ,  H01L43/10 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12 ,  G11C11/16

CPC classification number: H01L43/10 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction resides on a substrate and is usable in a magnetic device. The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The pinned layer has a pinned layer perpendicular magnetic anisotropy energy greater than a pinned layer out-of-plane demagnetization energy. The pinned layer includes a high perpendicular magnetic anisotropy (PMA) layer including at least one nonmagnetic component, a magnetic layer and a magnetic barrier layer between the high PMA layer and the magnetic layer. The magnetic barrier layer includes Co and at least one of Ta, W and Mo. The magnetic barrier layer is for blocking diffusion of the nonmagnetic component of the high PMA layer.

公开(公告)号：US20160197119A1

公开(公告)日：2016-07-07

申请号：US14977094

申请日：2015-12-21

Applicant: Samsung Electronics Co., LTD.

Inventor： Xueti Tang ,  Jang-Eun Lee ,  Gen Feng ,  Dustin William Erickson

IPC: H01L27/22 ,  H01L43/10 ,  H01L43/12 ,  H01L43/02

CPC classification number: H01L27/222 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a nonmagnetic spacer layer, and a reference layer. The free layer includes at least one of Fe and at least one Fe alloy. Furthermore, the free layer excludes Co. The nonmagnetic spacer layer adjoins the free layer. The nonmagnetic spacer layer residing between reference layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

Abstract translation: 描述了可用于磁性装置的磁结和提供磁结的方法。 磁结包括自由层，非磁性间隔层和参考层。 自由层包括Fe和至少一种Fe合金中的至少一种。 此外，自由层不包括Co.非磁性间隔层邻接自由层。 位于参考层和自由层之间的非磁性间隔层。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。

公开(公告)号：US10553642B2

公开(公告)日：2020-02-04

申请号：US15787524

申请日：2017-10-18

Applicant: Samsung Electronics Co., LTD.

Inventor： Don Koun Lee ,  Mohamad Towfik Krounbi ,  Xueti Tang ,  Gen Feng ,  Ikhtiar

IPC: H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22 ,  G11B5/39 ,  G11C11/16

Abstract: A magnetic junction, a memory using the magnetic junction and method for providing the magnetic junction are described. The magnetic junction resides on a substrate and is usable in a magnetic device. The magnetic junction includes a reference layer, a nonmagnetic spacer layer and a M-containing oxide layer adjacent to the free layer. M includes at least one of Ti, Al, Hf, Zr, Mo, V and Nb. The free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. The nonmagnetic spacer layer is between the reference layer and the free layer. The free layer is between the nonmagnetic spacer layer and the M-containing oxide layer.

公开(公告)号：US20180351086A1

公开(公告)日：2018-12-06

申请号：US15659605

申请日：2017-07-25

Applicant: Samsung Electronics Co., LTD.

Inventor： Xueti Tang ,  Gen Feng ,  Mohamad Towfik Krounbi

IPC: H01L43/08 ,  H01L43/02 ,  H01L43/12 ,  H01L27/22

Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction resides on a substrate and is usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, a free layer, an oxide layer and at least one oxygen blocking layer. The free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. The nonmagnetic spacer layer is between the pinned layer and the free layer. The oxide layer is adjacent to the free layer. The free layer is between the nonmagnetic spacer layer and the oxide layer. The oxygen blocking layer(s) has a position selected from adjacent to the oxide layer and adjacent to the pinned layer. In some aspects, the magnetic junction may also include an oxygen adsorber layer and/or a tuning layer.

公开(公告)号：US09941467B1

公开(公告)日：2018-04-10

申请号：US15364147

申请日：2016-11-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Xueti Tang ,  Mohamad Towfik Krounbi ,  Donkoun Lee ,  Gen Feng

IPC: H01L27/20 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  G11C11/16 ,  H01L41/00

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/20 ,  H01L27/22 ,  H01L27/228 ,  H01L41/00 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction resides on a substrate and is usable in a magnetic device. The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The free layer has a free layer perpendicular magnetic anisotropy energy greater than a free layer out-of-plane demagnetization energy. The free layer includes a [CoxFeyBz]uMot layer, where u+t=1, x+y+z=1 and u, t, x, y and z are each nonzero. The [CoxFeyBz]uMot layer has a perpendicular magnetic anisotropy energy greater than its out-of-plane demagnetization energy.

公开(公告)号：US10439133B2

公开(公告)日：2019-10-08

申请号：US15603402

申请日：2017-05-23

Applicant: Samsung Electronics Co., LTD.

Inventor： Dmytro Apalkov ,  Xueti Tang ,  Vladimir Nikitin ,  Shuxia Wang ,  Gen Feng

IPC: H01L43/00 ,  H01L43/08 ,  H01L43/12 ,  G11C11/16 ,  H01L43/10

Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes a reference layer, a nonmagnetic spacer layer and a hybrid free layer. The hybrid free layer is switchable between stable magnetic states using a current passed through the magnetic junction. The nonmagnetic spacer layer is between the free layer and the reference layer. The hybrid free layer includes a soft magnetic layer, a hard magnetic layer and an oxide coupling layer between the hard magnetic layer and the soft magnetic layer. The soft magnetic layer has a soft layer magnetic thermal stability coefficient of not more than thirty. The hard magnetic layer has a hard layer magnetic thermal stability coefficient of at least twice the soft layer magnetic thermal stability coefficient.

公开(公告)号：US20190067366A1

公开(公告)日：2019-02-28

申请号：US15787524

申请日：2017-10-18

Applicant: Samsung Electronics Co., LTD.

Inventor： Don Koun Lee ,  Mohamad Towfik Krounbi ,  Xueti Tang ,  Gen Feng ,  Ikhtiar

IPC: H01L27/22 ,  H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  G11C11/16

Abstract: A magnetic junction, a memory using the magnetic junction and method for providing the magnetic junction are described. The magnetic junction resides on a substrate and is usable in a magnetic device. The magnetic junction includes a reference layer, a nonmagnetic spacer layer and a M-containing oxide layer adjacent to the free layer. M includes at least one of Ti, Al, Hf, Zr, Mo, V and Nb. The free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. The nonmagnetic spacer layer is between the reference layer and the free layer. The free layer is between the nonmagnetic spacer layer and the M-containing oxide layer.

公开(公告)号：US20180247684A1

公开(公告)日：2018-08-30

申请号：US15965563

申请日：2018-04-27

Applicant: Samsung Electronics Co., LTD.

Inventor： Xueti Tang ,  Mohamad Towfik Krounbi ,  Gen Feng ,  Vladimir Nikitin

IPC: G11C11/16 ,  H01L43/10 ,  H01L43/12

CPC classification number: G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic device and method for providing the device are described. The magnetic device includes magnetic junction(s) and spin-orbit interaction active layer(s) adjacent to the magnetic junction free layer(s). The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states. Providing the pinned and/or free layer(s) includes providing a magnetic layer including a glass-promoting component, providing a sacrificial oxide on the magnetic layer, providing a sacrificial layer on the sacrificial oxide and performing anneal(s) of the magnetic layer, the sacrificial oxide layer and the sacrificial layer at anneal temperature(s) greater than 300 degrees Celsius and not exceeding 475 degrees Celsius. The magnetic layer is amorphous as-deposited but is at least partially crystallized after the anneal(s). The sacrificial layer includes a sink for the glass-promoting component. The sacrificial layer and the sacrificial oxide are removed after the anneal(s).

公开(公告)号：US09876164B1

公开(公告)日：2018-01-23

申请号：US15367014

申请日：2016-12-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Xueti Tang ,  Mohamad Towfik Krounbi ,  Dustin Erickson ,  Donkoun Lee ,  Gen Feng

IPC: H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08 ,  H01L27/22 ,  G11C11/16

CPC classification number: H01L43/10 ,  G11C11/161 ,  G11C11/165 ,  H01L27/226 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction resides on a substrate and is usable in a magnetic device. The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The free layer has a free layer perpendicular magnetic anisotropy energy greater than a free layer out-of-plane demagnetization energy. The free layer includes an alloy. The alloy includes [CoxFeyBz]uMgt, where u+t=1 and x+y+z=1.