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    METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS USING THERMALLY ASSISTED SPIN TRANSFER TORQUE SWITCHING
    2.
    发明申请
    METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS USING THERMALLY ASSISTED SPIN TRANSFER TORQUE SWITCHING 有权
    使用热辅助转子转矩开关提供磁结的方法和系统

    公开(公告)号：US20160197265A1

    公开(公告)日：2016-07-07

    申请号：US14981391

    申请日：2015-12-28

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Xueti Tang ,  Jang-Eun Lee ,  Gen Feng

    IPC: H01L43/02 ,  G11C11/16 ,  H01L43/12 ,  H01L43/08 ,  H01L43/10

    CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/226 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a pinned layer and nonmagnetic spacer layer between the free and pinned layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The write current generates joule heating such that the free layer has a switching temperature greater than room temperature. The free layer includes a multilayer that is temperature sensitive and has at least one bilayer. Each bilayer includes first and second layers. The first layer includes an alloy of a magnetic transition metal and a rare earth. The second layer includes a magnetic layer. The multilayer has a room temperature coercivity and a switching temperature coercivity. The switching temperature coercivity is not more than one-half of the room temperature coercivity.

    Abstract translation: 描述了可用于磁性装置的磁结和提供磁结的方法。 磁性结包括自由层，被钉扎层和位于游离层和被钉扎层之间的非磁性间隔层。 当写入电流通过磁结时，自由层可在稳定的磁状态之间切换。 写入电流产生焦耳加热，使得自由层具有大于室温的开关温度。 自由层包括温度敏感且具有至少一个双层的多层。 每个双层包括第一层和第二层。 第一层包括磁性过渡金属和稀土的合金。 第二层包括磁性层。 该多层膜具有室温矫顽力和切换温度矫顽力。 开关温度矫顽力不超过室温矫顽力的一半。

    Method and system for providing a bottom pinned layer in a perpendicular magnetic junction usable in spin transfer torque magnetic random access memory applications
    4.
    发明授权
    Method and system for providing a bottom pinned layer in a perpendicular magnetic junction usable in spin transfer torque magnetic random access memory applications 有权
    用于在旋转传递转矩磁性随机存取存储器应用中的垂直磁结中提供底部被钉扎层的方法和系统

    公开(公告)号：US09472750B2

    公开(公告)日：2016-10-18

    申请号：US14977145

    申请日：2015-12-21

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Xueti Tang ,  Dustin William Erickson ,  Jang-Eun Lee

    IPC: H01L21/8234 ,  H01L21/8244 ,  H01L43/08 ,  H01L43/12 ,  H01L43/02 ,  G11C11/16 ,  H01L43/10 ,  H01L27/22

    CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/222 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

    Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The pinned layer has a perpendicular magnetic anisotropy (PMA) energy greater than its out-of-plane demagnetization energy. Providing the pinned layer includes providing a bulk PMA (B-PMA) layer, providing an interfacial PMA (I-PMA) layer on the B-PMA layer and then providing a sacrificial layer that is a sink for a constituent of the first I-PMA layer. An anneal is then performed. The sacrificial layer and part of the first I-PMA layer are removed after the anneal. Additional I-PMA layer(s) are provided after the removing. A remaining part of the first I-PMA layer and the additional I-PMA layer(s) have a thickness of not more than twenty Angstroms.

    Abstract translation: 描述了用于提供磁结的磁结和方法。 磁结包括由非磁性间隔层隔开的自由和固定层。 当写入电流通过磁结时，自由层可在稳定的磁状态之间切换。 钉扎层具有大于其平面外退磁能的垂直磁各向异性（PMA）能量。 提供被钉扎层包括提供大块PMA（B-PMA）层，在B-PMA层上提供界面PMA（I-PMA）层，然后提供牺牲层，其为第一I- PMA层。 然后进行退火。 在退火之后去除牺牲层和第一I-PMA层的一部分。 在除去后提供额外的I-PMA层。 第一I-PMA层和附加的I-PMA层的剩余部分的厚度不超过二十埃。

    METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS INCLUDING FREE LAYERS THAT ARE COBALT-FREE
    6.
    发明申请
    METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS INCLUDING FREE LAYERS THAT ARE COBALT-FREE 有权
    用于提供磁性结的方法和系统，包括无钴的自由层

    公开(公告)号：US20160197119A1

    公开(公告)日：2016-07-07

    申请号：US14977094

    申请日：2015-12-21

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Xueti Tang ,  Jang-Eun Lee ,  Gen Feng ,  Dustin William Erickson

    IPC: H01L27/22 ,  H01L43/10 ,  H01L43/12 ,  H01L43/02

    CPC classification number: H01L27/222 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a nonmagnetic spacer layer, and a reference layer. The free layer includes at least one of Fe and at least one Fe alloy. Furthermore, the free layer excludes Co. The nonmagnetic spacer layer adjoins the free layer. The nonmagnetic spacer layer residing between reference layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

    Abstract translation: 描述了可用于磁性装置的磁结和提供磁结的方法。 磁结包括自由层，非磁性间隔层和参考层。 自由层包括Fe和至少一种Fe合金中的至少一种。 此外，自由层不包括Co.非磁性间隔层邻接自由层。 位于参考层和自由层之间的非磁性间隔层。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。

    Method and system for providing magnetic junctions including free layers that are cobalt-free
    8.
    发明授权
    Method and system for providing magnetic junctions including free layers that are cobalt-free 有权
    提供包括无钴的自由层的磁连接的方法和系统

    公开(公告)号：US09559143B2

    公开(公告)日：2017-01-31

    申请号：US14977094

    申请日：2015-12-21

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Xueti Tang ,  Jang-Eun Lee ,  Gen Feng ,  Dustin William Erickson

    IPC: H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L27/22 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

    CPC classification number: H01L27/222 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a nonmagnetic spacer layer, and a reference layer. The free layer includes at least one of Fe and at least one Fe alloy. Furthermore, the free layer excludes Co. The nonmagnetic spacer layer adjoins the free layer. The nonmagnetic spacer layer residing between reference layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

    Abstract translation: 描述了可用于磁性装置的磁结和提供磁结的方法。 磁结包括自由层，非磁性间隔层和参考层。 自由层包括Fe和至少一种Fe合金中的至少一种。 此外，自由层不包括Co.非磁性间隔层邻接自由层。 位于参考层和自由层之间的非磁性间隔层。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。

    METHOD AND SYSTEM FOR PROVIDING A BOTTOM PINNED LAYER IN A PERPENDICULAR MAGNETIC JUNCTION USABLE IN SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY APPLICATIONS
    9.
    发明申请
    METHOD AND SYSTEM FOR PROVIDING A BOTTOM PINNED LAYER IN A PERPENDICULAR MAGNETIC JUNCTION USABLE IN SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY APPLICATIONS 有权
    用于在旋转传动扭矩磁性随机存取存储器应用中可用的全能磁性接头中提供底部引线层的方法和系统

    公开(公告)号：US20160197267A1

    公开(公告)日：2016-07-07

    申请号：US14977145

    申请日：2015-12-21

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Xueti Tang ,  Dustin William Erickson ,  Jang-Eun Lee

    IPC: H01L43/08 ,  H01L27/22 ,  G11C11/16 ,  H01L43/10 ,  H01L43/12 ,  H01L43/02

    CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/222 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

    Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The pinned layer has a perpendicular magnetic anisotropy (PMA) energy greater than its out-of-plane demagnetization energy. Providing the pinned layer includes providing a bulk PMA (B-PMA) layer, providing an interfacial PMA (I-PMA) layer on the B-PMA layer and then providing a sacrificial layer that is a sink for a constituent of the first I-PMA layer. An anneal is then performed. The sacrificial layer and part of the first I-PMA layer are removed after the anneal. Additional I-PMA layer(s) are provided after the removing. A remaining part of the first I-PMA layer and the additional I-PMA layer(s) have a thickness of not more than twenty Angstroms.

    Abstract translation: 描述了用于提供磁结的磁结和方法。 磁结包括由非磁性间隔层隔开的自由和固定层。 当写入电流通过磁结时，自由层可在稳定的磁状态之间切换。 钉扎层具有大于其平面外退磁能的垂直磁各向异性（PMA）能量。 提供被钉扎层包括提供大块PMA（B-PMA）层，在B-PMA层上提供界面PMA（I-PMA）层，然后提供牺牲层，其为第一I- PMA层。 然后进行退火。 在退火之后去除牺牲层和第一I-PMA层的一部分。 在除去后提供额外的I-PMA层。 第一I-PMA层和附加的I-PMA层的剩余部分的厚度不超过二十埃。

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