公开(公告)号：US10439133B2

公开(公告)日：2019-10-08

申请号：US15603402

申请日：2017-05-23

Applicant: Samsung Electronics Co., LTD.

Inventor： Dmytro Apalkov ,  Xueti Tang ,  Vladimir Nikitin ,  Shuxia Wang ,  Gen Feng

IPC: H01L43/00 ,  H01L43/08 ,  H01L43/12 ,  G11C11/16 ,  H01L43/10

Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes a reference layer, a nonmagnetic spacer layer and a hybrid free layer. The hybrid free layer is switchable between stable magnetic states using a current passed through the magnetic junction. The nonmagnetic spacer layer is between the free layer and the reference layer. The hybrid free layer includes a soft magnetic layer, a hard magnetic layer and an oxide coupling layer between the hard magnetic layer and the soft magnetic layer. The soft magnetic layer has a soft layer magnetic thermal stability coefficient of not more than thirty. The hard magnetic layer has a hard layer magnetic thermal stability coefficient of at least twice the soft layer magnetic thermal stability coefficient.

公开(公告)号：US10177197B2

公开(公告)日：2019-01-08

申请号：US15043349

申请日：2016-02-12

Applicant: Samsung Electronics Co., LTD.

Inventor： Dmytro Apalkov ,  Shuxia Wang ,  Jang-Eun Lee

IPC: H01L27/22 ,  G11C11/16 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  G11C11/56 ,  H01F10/32

Abstract: A magnetic junction usable in a magnetic device is described. The magnetic junction has a free layer, a reference layer, and a nonmagnetic spacer layer between reference and free layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The free layer has a length in a first direction, a width in a second direction perpendicular to the first direction, an exchange stiffness and an aspect ratio equal to the length divided by the width. The aspect ratio is greater than one. The exchange stiffness is not less than 2×10−6 erg/cm.

公开(公告)号：US20180261762A1

公开(公告)日：2018-09-13

申请号：US15603402

申请日：2017-05-23

Applicant: Samsung Electronics Co., LTD.

Inventor： Dmytro Apalkov ,  Xueti Tang ,  Vladimir Nikitin ,  Shuxia Wang ,  Gen Feng

IPC: H01L43/08 ,  H01L43/12 ,  G11C11/16 ,  H01L43/10

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes a reference layer, a nonmagnetic spacer layer and a hybrid free layer. The hybrid free layer is switchable between stable magnetic states using a current passed through the magnetic junction. The nonmagnetic spacer layer is between the free layer and the reference layer. The hybrid free layer includes a soft magnetic layer, a hard magnetic layer and an oxide coupling layer between the hard magnetic layer and the soft magnetic layer. The soft magnetic layer has a soft layer magnetic thermal stability coefficient of not more than thirty. The hard magnetic layer has a hard layer magnetic thermal stability coefficient of at least twice the soft layer magnetic thermal stability coefficient.

公开(公告)号：US20180190898A1

公开(公告)日：2018-07-05

申请号：US15396296

申请日：2016-12-30

Applicant: Samsung Electronics Co., LTD.

Inventor： Shuxia Wang ,  Dmytro Apalkov ,  Vladimir Nikitin

IPC: H01L43/02 ,  H01L43/08 ,  H01L43/12 ,  H01L27/22 ,  H01L43/10

CPC classification number: H01L27/226 ,  G11C11/161 ,  G11C11/165 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes a free layer, first and second reference layers, and first and second nonmagnetic spacer layers. The free layer is switchable between stable magnetic states using a current passed through the magnetic junction. The first and second nonmagnetic spacer layers are between the free layer and first and second reference layers. The first and second reference layers have first and second reference layer magnetic lengths. The free layer has a free layer magnetic length less than the first and second reference layer magnetic lengths. The free layer magnetic length has a first end and a second end opposite to the first end. The free layer and the reference layers are oriented such that the first and second reference layer magnetic lengths extend past the first and second ends of the free layer.

公开(公告)号：US20180269384A1

公开(公告)日：2018-09-20

申请号：US15976844

申请日：2018-05-10

Applicant: Samsung Electronics Co., LTD.

Inventor： Shuxia Wang ,  Dmytro Apalkov ,  Vladimir Nikitin

IPC: H01L43/02 ,  H01L43/12 ,  H01L43/10 ,  H01L43/08 ,  H01L27/22 ,  G11C11/16

CPC classification number: H01L27/226 ,  G11C11/161 ,  G11C11/165 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes a free layer, first and second reference layers, and first and second nonmagnetic spacer layers. The free layer is switchable between stable magnetic states. The first and second nonmagnetic spacer layers are between the free layer and first and second reference layers. The first and second reference layers have first and second reference layer magnetic lengths. The free layer has a free layer magnetic length less than the free layer physical length and less than the first and second reference layer magnetic lengths. The free layer magnetic length has a first end and a second end opposite to the first end. The free layer and the reference layers are oriented such that the first and second reference layer magnetic lengths extend past the first and second ends of the free layer.

公开(公告)号：US20170140804A1

公开(公告)日：2017-05-18

申请号：US15043349

申请日：2016-02-12

Applicant: Samsung Electronics Co., LTD.

Inventor： Dmytro Apalkov ,  Shuxia Wang ,  Jang-Eun Lee

IPC: G11C11/16 ,  H01L27/22 ,  H01L43/10 ,  H01L43/02 ,  H01L43/08

CPC classification number: H01L27/22 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/5607 ,  H01F10/3259 ,  H01F10/329 ,  H01L27/222 ,  H01L27/224 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetic junction usable in a magnetic device is described. The magnetic junction has a free layer, a reference layer, and a nonmagnetic spacer layer between reference and free layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The free layer has a length in a first direction, a width in a second direction perpendicular to the first direction, an exchange stiffness and an aspect ratio equal to the length divided by the width. The aspect ratio is greater than one. The exchange stiffness is not less than 2×10−6 erg/cm.