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    Semiconductor device
    23.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US11107822B2

    公开(公告)日：2021-08-31

    申请号：US16722081

    申请日：2019-12-20

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jung Gil Yang ,  Sun Wook Kim ,  Jun Beom Park ,  Tae Young Kim ,  Geum Jong Bae

    IPC: H01L27/11 ,  H01L23/528 ,  H01L29/06 ,  H01L29/775 ,  H01L27/02 ,  H01L29/423 ,  H01L29/78

    Abstract: A semiconductor device includes first and second fin type patterns, first and second gate patterns intersecting the first and second fin type patterns, third and fourth gate patterns intersecting the first fin type pattern between the first and the second gate patterns, a fifth gate pattern intersecting the second fin type pattern, a sixth gate pattern intersecting the second fin type pattern, first to third semiconductor patterns disposed among the first, the third, the fourth and the second gate patterns, and fourth to sixth semiconductor patterns disposed among the first, the fifth, the sixth and the second gate patterns. The first semiconductor pattern to the fourth semiconductor pattern and the sixth semiconductor pattern are electrically connected to a wiring structure, and the fifth semiconductor pattern is not connected to the wiring structure.

    Semiconductor device including a multigate transistor formed with fin structure
    25.
    发明授权
    Semiconductor device including a multigate transistor formed with fin structure 有权

    公开(公告)号：US10923472B2

    公开(公告)日：2021-02-16

    申请号：US16574887

    申请日：2019-09-18

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sung Min Kim ,  Dong Won Kim ,  Geum Jong Bae

    IPC: H01L27/088 ,  H01L27/02 ,  H01L21/8234 ,  H01L21/308 ,  H01L21/02 ,  H01L29/66

    Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a plurality of fins comprising a first fin, a second fin, a third fin, a fourth fin and a fifth fin, each of the plurality of protruding from the substrate in a first direction, and spaced apart from one another in a second direction that intersects the first direction and a plurality of trenches comprising a first trench, a second trench, a third trench and a fourth trench, each of the plurality of trenches being formed between adjacent fins of the plurality of fins, wherein variation of a first width of the first trench and a third width of the third trench is smaller than a first variation, wherein variation of a second width of the second trench and a fourth width of the fourth trench is smaller than a second variation, and wherein the second variation is greater than the first variation.

    Semiconductor device including fin-FET and etch stop layers
    26.
    发明授权
    Semiconductor device including fin-FET and etch stop layers 有权

    公开(公告)号：US10903324B2

    公开(公告)日：2021-01-26

    申请号：US16205851

    申请日：2018-11-30

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Chang Woo Noh ,  Seung Min Song ,  Geum Jong Bae ,  Dong Il Bae

    IPC: H01L29/66 ,  H01L29/417 ,  H01L21/768 ,  H01L29/06 ,  H01L29/78

    Abstract: A semiconductor device including a fin field effect transistor (fin-FET) includes active fins disposed on a substrate, isolation layers on both sides of the active fins, a gate structure formed to cross the active fins and the isolation layers, source/drain regions on the active fins on sidewalls of the gate structure, a first interlayer insulating layer on the isolation layers in contact with portions of the sidewalls of the gate structure and portions of surfaces of the source/drain regions, an etch stop layer configured to overlap the first interlayer insulating layer, the sidewalls of the gate structure, and the source/drain regions, and contact plugs formed to pass through the etch stop layer to contact the source/drain regions. The source/drain regions have main growth portions in contact with upper surfaces of the active fins.

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