公开(公告)号：US20230380195A1

公开(公告)日：2023-11-23

申请号：US18150123

申请日：2023-01-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kiyeon YANG ,  Changseung Lee ,  Dongho Ahn

IPC: H10B63/00 ,  H10B63/10

CPC classification number: H10B63/845 ,  H10B63/10 ,  H10B63/24

Abstract: A memory device including a phase-change material includes: a substrate; a first memory cell including a first selection layer and a first phase-change material layer, and a second memory cell including a second selection layer and a second phase-change material layer, wherein the first memory cell and the second memory cell are arranged apart from each other with an insulating layer therebetween in a normal direction of the substrate, wherein the first phase-change material layer and the second phase-change material layer include: a first layer including a thermal confinement material; and a second layer including a phase-change material, respectively, wherein the first layer and the second layer extend in a direction vertical to the substrate, and wherein the first phase-change material layer is physically isolated from the second phase-change material layer by the insulating layer.

公开(公告)号：US11137661B2

公开(公告)日：2021-10-05

申请号：US16406677

申请日：2019-05-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeongyub Lee ,  Yongsung Kim ,  Jaekwan Kim ,  Changseung Lee

IPC: G02F1/21

Abstract: Provided are a multilayer thin-film structure and a phase shifting device using the same. The multilayer thin-film structure includes at least one crystallization preventing layer and at least one dielectric layer that are alternately stacked. The at least one crystallization preventing layer includes an amorphous material, and a thickness of the at least one crystallization preventing layer is less than a thickness of the at least one dielectric layer.

公开(公告)号：US10670891B2

公开(公告)日：2020-06-02

申请号：US15632640

申请日：2017-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)

Inventor： Kiyeon Yang ,  Youngsun Choi ,  Seokho Song ,  Jaewoong Yoon ,  Choloong Han ,  Yongsung Kim ,  Jeongyub Lee ,  Changseung Lee

IPC: G02F1/31 ,  G02B6/12 ,  G02B6/27 ,  G02B6/42 ,  G02F1/09 ,  G02B6/293 ,  G02F1/095

Abstract: Nonreciprocal optical transmission devices and optical apparatuses including the nonreciprocal optical transmission devices are provided. A nonreciprocal optical transmission device includes an optical input portion, an optical output portion, and an intermediate connecting portion interposed between the optical input portion and the optical output portion, and comprising optical waveguides. A complex refractive index of any one or any combination of the optical waveguides changes between the optical input portion and the optical output portion, and a transmission direction of light through the nonreciprocal optical transmission device is controlled by a change in the complex refractive index.

公开(公告)号：US10392518B2

公开(公告)日：2019-08-27

申请号：US15499376

申请日：2017-04-27

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  FOUNDATION OF SOONGSIL UNIVERSITY-INDUSTRY COOPERATION

Inventor： Kunmo Chu ,  Byonggwon Song ,  Sunghoon Park ,  Kiyeon Yang ,  Changseung Lee

IPC: H01B1/22 ,  C09D5/24 ,  C09D7/40 ,  C09D7/61 ,  C09D183/04 ,  H01L23/00 ,  C09D11/52 ,  H01R13/24 ,  H01B1/24 ,  H05K1/09 ,  H01L23/498 ,  H01L21/48 ,  C08K3/04 ,  C08K3/08 ,  C08K3/10 ,  H05K1/02 ,  H05K1/18

Abstract: Provided are a paste material, a method of forming the paste material, a wiring member formed from the paste material, and an electronic device including the wiring member. The paste material may include a plurality of liquid metal particles and a polymer binder. The paste material may further include a plurality of nanofillers. At least some of the plurality of nanofillers may each have an aspect ratio equal to or greater than about 3. A content of the plurality of liquid metal particles may be greater than a content of the polymer binder and may be greater than a content of the plurality of nanofillers. The wiring member may be formed by using the paste material, and the wiring member may be used in various electronic devices.

公开(公告)号：US09970906B2

公开(公告)日：2018-05-15

申请号：US14734229

申请日：2015-06-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jooho Lee ,  Changseung Lee ,  Jeoyoung Shim ,  Sunghee Lee ,  Woosung Jeon

IPC: G01N29/12 ,  G01N29/24

CPC classification number: G01N29/12 ,  G01N29/2437 ,  G01N2291/0256 ,  G01N2291/2697

Abstract: An apparatus for analyzing an active material of a secondary battery may include: a first electrode; a piezoelectric layer on the first electrode; a second electrode on the piezoelectric layer, configured to provide a voltage having a polarity opposite to a polarity of the first electrode; and/or an insulating layer on the second electrode and including a through hole exposing a portion of the second electrode. A method of analyzing an active material of a secondary battery may include: disposing an active material in a through hole of a bulk acoustic resonator, in which a first electrode, a piezoelectric layer, a second electrode, and an insulating layer are stacked; measuring a resonance frequency of the resonator by applying an electric signal to the first and second electrodes of the resonator; and/or measuring a weight of the active material in the through hole, based on the measured resonance frequency.

公开(公告)号：US12268105B2

公开(公告)日：2025-04-01

申请号：US18349433

申请日：2023-07-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kiyeon Yang ,  Dongho Ahn ,  Changseung Lee

IPC: H10N70/00 ,  H10B63/00 ,  H10N70/20

Abstract: A semiconductor apparatus may include a plurality of semiconductor unit devices. Each of the semiconductor unit devices may be arranged between a first insulating layer and a second insulating layer that are apart from each other in a direction normal to a substrate. Each of the semiconductor unit devices may include a selection device layer and a phase change material layer that extend side by side in a direction parallel to the substrate. The phase change material layer may have a superlattice-like structure. The phase change material layer may be arranged along a recess portion that is formed by the first insulating layer, the second insulating layer, and the selection device layer.

公开(公告)号：US12101942B2

公开(公告)日：2024-09-24

申请号：US18478776

申请日：2023-09-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wooyoung Yang ,  Bonwon Koo ,  Chungman Kim ,  Kwangmin Park ,  Hajun Sung ,  Dongho Ahn ,  Changseung Lee ,  Minwoo Choi

IPC: H10B63/00 ,  G11C13/00 ,  H10B61/00 ,  H10N50/01 ,  H10N50/80 ,  H10N70/00 ,  H10N70/20

CPC classification number: H10B63/24 ,  G11C13/0004 ,  H10B61/10 ,  H10B63/84 ,  H10N50/01 ,  H10N50/80 ,  H10N70/063 ,  H10N70/231 ,  H10N70/24 ,  H10N70/25 ,  H10N70/8413 ,  H10N70/8825 ,  H10N70/8828 ,  H10N70/8833 ,  H10N70/8836

Abstract: A chalcogen compound layer exhibiting ovonic threshold switching characteristics, a switching device, a semiconductor device, and/or a semiconductor apparatus including the same are provided. The switching device and/or the semiconductor device may include two or more chalcogen compound layers having different energy band gaps. Alternatively, the switching device and/or semiconductor device may include a chalcogen compound layer having a concentration gradient of an element of boron (B), aluminum (Al), scandium (Sc), manganese (Mn), strontium (Sr), and/or indium (In) in a thickness direction thereof. The switching device and/or a semiconductor device may exhibit stable switching characteristics while having a low off-current value (leakage current value).

公开(公告)号：US20240057347A1

公开(公告)日：2024-02-15

申请号：US18348846

申请日：2023-07-07

Applicant: Samsung Electronics Co., Ltd. ,  UIF (University Industry Foundation), Yonsei University

Inventor： Wooyoung YANG ,  Hyungjun Kim ,  Hajun Sung ,  Kiyeon Yang ,  Changseung Lee ,  Changyup Park ,  Seung-min Chung ,  Sangyoon Lee ,  Inkyu Sohn

IPC: H10B63/10 ,  H10N70/20 ,  H10N70/00 ,  H10B63/00

CPC classification number: H10B63/10 ,  H10N70/231 ,  H10N70/8822 ,  H10N70/826 ,  H10N70/828 ,  H10B63/20 ,  H10N70/023 ,  H10N70/8825

Abstract: A memory element includes a substrate, a first electrode formed on the substrate, a phase-change heterolayer formed on the first electrode and electrically connected to the first electrode, and a second electrode formed on the phase-change heterolayer, wherein the phase-change heterolayer includes one or more confinement material layers and one or more phase-change material layers, and the confinement material layer includes a metal chalcogenide film.

公开(公告)号：US20240046986A1

公开(公告)日：2024-02-08

申请号：US18157408

申请日：2023-01-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minwoo CHOI ,  Young Jae Kang ,  Bonwon Koo ,  Yongyoung Park ,  Hajun Sung ,  Dongho Ahn ,  Kiyeon Yang ,  Wooyoung Yang ,  Changseung Lee

IPC: G11C13/00 ,  H10B63/10

CPC classification number: G11C13/0069 ,  G11C13/0004 ,  H10B63/10 ,  G11C2213/30 ,  H10B63/84

Abstract: A memory device includes a memory cell including a selection layer and a phase change material layer, and a controller, wherein the selection layer includes a switching material, the phase change material layer includes a phase change material, and the controller is configured to apply a write pulse to the selection layer and the phase change material layer and control a polarity, a peak value, and a shape of the write pulse.

公开(公告)号：US11818899B2

公开(公告)日：2023-11-14

申请号：US17244212

申请日：2021-04-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wooyoung Yang ,  Bonwon Koo ,  Chungman Kim ,  Kwangmin Park ,  Hajun Sung ,  Dongho Ahn ,  Changseung Lee ,  Minwoo Choi

IPC: H10B63/00 ,  G11C13/00 ,  H10B61/00 ,  H10N50/01 ,  H10N50/80 ,  H10N70/20 ,  H10N70/00

CPC classification number: H10B63/24 ,  G11C13/0004 ,  H10B61/10 ,  H10B63/84 ,  H10N50/01 ,  H10N50/80 ,  H10N70/063 ,  H10N70/231 ,  H10N70/24 ,  H10N70/25 ,  H10N70/8413 ,  H10N70/8825 ,  H10N70/8828 ,  H10N70/8833 ,  H10N70/8836

Abstract: A chalcogen compound layer exhibiting ovonic threshold switching characteristics, a switching device, a semiconductor device, and/or a semiconductor apparatus including the same are provided. The switching device and/or the semiconductor device may include two or more chalcogen compound layers having different energy band gaps. Alternatively, the switching device and/or semiconductor device may include a chalcogen compound layer having a concentration gradient of an element of boron (B), aluminum (Al), scandium (Sc), manganese (Mn), strontium (Sr), and/or indium (In) in a thickness direction thereof. The switching device and/or a semiconductor device may exhibit stable switching characteristics while having a low off-current value (leakage current value).