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21.发明申请METHODS AND APPARATUSES FOR STABLE DEPOSITION RATE CONTROL IN LOW TEMPERATURE ALD SYSTEMS BY SHOWERHEAD ACTIVE HEATING AND/OR PEDESTAL COOLING 审中-公开低温ALD系统的稳定沉积速率控制方法和装置，主要用于加热和/或冷却公开(公告)号：US20160056032A1
公开(公告)日：2016-02-25
申请号：US14466925
申请日：2014-08-22
发明人： Chloe Baldasseroni , Adrien LaVoie , Hu Kang , Jun Qian , Purushottam Kumar , Andrew Duvall , Cody Barnett , Mohamed Sabri , Ramesh Chandrasekharan , Karl F. Leeser , David C. Smith , Seshasayee Varadarajan , Edmund B. Minshall
IPC分类号： H01L21/02 , C23C16/46 , C23C16/52 , C23C16/455 , C23C16/458
CPC分类号： H01L21/0228 , C23C16/45527 , C23C16/45544 , C23C16/45565 , C23C16/45572 , C23C16/4586 , C23C16/46 , C23C16/463 , C23C16/52 , H01L21/02274
摘要： Disclosed are methods of depositing films of material on semiconductor substrates. The methods may include flowing a film precursor into a processing chamber through a showerhead substantially maintained at a first temperature, and adsorbing the film precursor onto a substrate held on a substrate holder such that the precursor forms an adsorption-limited layer while the substrate holder is substantially maintained at a second temperature. The first temperature may be at least about 10° C. above the second temperature, or the first temperature may be at or below the second temperature. The methods may further include removing at least some unadsorbed film precursor from the volume surrounding the adsorbed film precursor, and thereafter reacting adsorbed film precursor to form a film layer. Also disclosed herein are apparatuses having a processing chamber, a substrate holder, a showerhead, and one or more controllers for operating the apparatus to employ the foregoing film deposition techniques.
摘要翻译： 公开了在半导体衬底上沉积材料的方法。 所述方法可以包括通过基本上保持在第一温度的喷头将膜前体流入处理室，并且将膜前体吸附到保持在基板保持器上的基板上，使得前体形成吸附限制层，同时基板保持器为 基本保持在第二温度。 第一温度可以高于第二温度至少约10℃，或第一温度可处于或低于第二温度。 所述方法还可以包括从包围吸附膜前体的体积中去除至少一些未吸附的膜前体，然后使吸附膜前体反应形成膜层。 本文还公开了具有处理室，衬底保持器，喷头和用于操作该装置以使用上述成膜技术的一个或多个控制器的装置。
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公开(公告)号：US20150145154A1
公开(公告)日：2015-05-28
申请号：US14089009
申请日：2013-11-25
IPC分类号： C23C16/448 , B01F3/04 , C23C16/455
CPC分类号： C23C16/4481 , C23C16/45561
摘要： A system for supplying vaporized precursor includes an enclosure including an output. A plurality of trays is arranged in a stacked, spaced configuration inside the enclosure. The plurality of trays is configured to hold liquid precursor. A first conduit fluidly connects a carrier gas supply to the enclosure and includes a plurality of openings. A first valve is arranged along the first conduit and is configured to selectively control delivery of the carrier gas from the carrier gas supply through the first conduit to the plurality of openings in the first conduit. The plurality of openings is configured to direct the carrier gas across the liquid precursor in the plurality of trays, respectively. The output of the enclosure provides a mixture of the carrier gas and the vaporized precursor.
摘要翻译： 用于供应蒸发的前体的系统包括包括输出的外壳。 多个托盘被布置在外壳内的堆叠间隔开的构造中。 多个托盘被构造成保持液体前体。 第一导管将载气供应器流体地连接到外壳并且包括多个开口。 第一阀沿着第一管道布置并且构造成选择性地控制载气从载气供应通过第一管道传送到第一管道中的多个开口。 多个开口被配置成分别引导载气穿过多个托盘中的液体前体。 外壳的输出提供载气和汽化的前体的混合物。
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公开(公告)号：US20150011096A1
公开(公告)日：2015-01-08
申请号：US13934624
申请日：2013-07-03
IPC分类号： H01L21/67 , C23C16/455 , H01L21/02
摘要： A deposition apparatus for processing semiconductor substrates having an isothermal processing zone comprises a chemical isolation chamber in which semiconductor substrates are processed. A process gas source is in fluid communication with a showerhead module which delivers process gases from the process gas source to the isothermal processing zone wherein the showerhead module includes a faceplate wherein a lower surface of the faceplate forms an upper wall of a cavity defining the isothermal processing zone, a backing plate, and an isolation ring which surrounds the faceplate and the backing plate. At least one compression seal is compressed between the faceplate and the backing plate which forms a central gas plenum between the faceplate and the backing plate. A substrate pedestal module is configured to heat and support a semiconductor substrate wherein an upper surface of the pedestal module forms a lower wall of the cavity defining the isothermal processing zone within the chemical isolation chamber. A vacuum source is in fluid communication with the isothermal processing zone for evacuating process gas from the processing zone.
摘要翻译： 用于处理具有等温处理区域的半导体衬底的沉积装置包括处理半导体衬底的化学隔离室。 工艺气体源与喷头模块流体连通，喷头模块将工艺气体从工艺气体源传送到等温处理区域，其中喷头模块包括面板，其中面板的下表面形成限定等温的空腔的上壁 处理区域，背板和围绕面板和背板的隔离环。 在面板和背板之间压缩至少一个压缩密封件，其在面板和背板之间形成中心气室。 衬底基座模块被配置为加热和支撑半导体衬底，其中基座模块的上表面形成限定化学隔离室内的等温处理区的空腔的下壁。 真空源与等温处理区流体连通，用于从处理区抽真空处理气体。
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公开(公告)号：US11959175B2
公开(公告)日：2024-04-16
申请号：US17304540
申请日：2021-06-22
发明人： Tuan Nguyen , Eashwar Ranganathan , Shankar Swaminathan , Adrien LaVoie , Chloe Baldasseroni , Ramesh Chandrasekharan , Frank Loren Pasquale , Jennifer Leigh Petraglia
IPC分类号： C23C16/52 , C23C16/448
CPC分类号： C23C16/52 , C23C16/448
摘要： Methods and apparatus for use of a fill on demand ampoule are disclosed. The fill on demand ampoule may refill an ampoule with precursor concurrent with the performance of other deposition processes. The fill on demand may keep the level of precursor within the ampoule at a relatively constant level. The level may be calculated to result in an optimum head volume. The fill on demand may also keep the precursor at a temperature near that of an optimum precursor temperature. The fill on demand may occur during parts of the deposition process where the agitation of the precursor due to the filling of the ampoule with the precursor minimally effects the substrate deposition. Substrate throughput may be increased through the use of fill on demand.
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公开(公告)号：US20230260759A1
公开(公告)日：2023-08-17
申请号：US18003139
申请日：2021-10-22
发明人： Eric A. Hudson , Andrew Clark Serino , Thad Nicholson , Ramesh Chandrasekharan , Alan M. Schoepp
IPC分类号： H01J37/32 , C23C16/50 , C23C16/02 , C23C16/56 , C23C16/455
CPC分类号： H01J37/32449 , H01J37/32816 , H01J37/32458 , C23C16/50 , C23C16/0245 , C23C16/56 , C23C16/45565 , H01J2237/334 , H01J2237/2002 , H01J37/32357
摘要： Various embodiments herein relate to methods and systems for integrating a vapor deposition process and an etch process in a single reactor. The vapor deposition process involves delivery of at least one deposition vapor in the absence of plasma. The etch process is a plasma etch process. Various features may be combined as desired to promote high quality deposition and etching results.
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公开(公告)号：US11661654B2
公开(公告)日：2023-05-30
申请号：US15956296
申请日：2018-04-18
发明人： Ramesh Chandrasekharan , Antonio Xavier , Frank Loren Pasquale , Ryan Blaquiere , Jennifer Leigh Petraglia , Meenakshi Mamunuru
IPC分类号： C23C16/40 , C23C16/455 , H01L21/67 , H01J37/32 , C23C16/44
CPC分类号： C23C16/45565 , C23C16/4404 , C23C16/45561 , H01J37/3244 , H01L21/67017
摘要： A gas delivery system includes a 2-port valve including a first valve located between a first port and a second port. A 4-port valve includes a first node connected to a first port and a second port. A bypass path is located between the third port and the fourth port. A second node is located along the bypass path. A second valve is located between the first node and the second node. A manifold block defines gas flow channels configured to connect the first port of the 4-port valve to a first inlet, configured to connect the second port of the 4-port valve to the first port of the 2-port valve, the third port of the 4-port valve to a second inlet, the second port of the 2-port valve to a first outlet, and the fourth port of the 4-port valve to a second outlet.
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公开(公告)号：US10741365B2
公开(公告)日：2020-08-11
申请号：US14668511
申请日：2015-03-25
发明人： Ramesh Chandrasekharan , Saangrut Sangplung , Shankar Swaminathan , Frank L. Pasquale , Hu Kang , Adrien LaVoie
IPC分类号： H01J37/32 , C23C16/455 , C30B25/14
摘要： A low volume showerhead in a semiconductor processing apparatus can include a porous baffle to improve the flow uniformity and purge time during atomic layer deposition. The showerhead can include a plenum volume, one or more gas inlets in fluid communication with the plenum volume, a faceplate including a plurality of first through-holes for distributing gas onto a substrate in the semiconductor processing apparatus, and a porous baffle positioned in a region between the plenum volume and the one or more gas inlets. The one or more gas inlets can include a stem having a small volume to improve purge time. The baffle can be porous and positioned between the stem and the plenum volume to improve flow uniformity and avoid jetting.
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28.发明授权公开(公告)号：US10347547B2
公开(公告)日：2019-07-09
申请号：US15232708
申请日：2016-08-09
发明人： Seshasayee Varadarajan , Aaron R. Fellis , Andrew John McKerrow , James Samuel Sims , Ramesh Chandrasekharan , Jon Henri
IPC分类号： H01L21/66 , H01L21/02 , C23C16/455 , C23C16/50 , C23C16/52 , C23C16/458 , C23C16/46 , C23C16/505 , C23C16/54 , H01L21/67 , H01L21/677
摘要： Disclosed are methods of and apparatuses and systems for depositing a film in a multi-station deposition apparatus. The methods may include: (a) providing a substrate to a first station of the apparatus, (b) adjusting the temperature of the substrate to a first temperature, (c) depositing a first portion of the material on the substrate while the substrate is at the first temperature in the first station, (d) transferring the substrate to the second station, (e) adjusting the temperature of the substrate to a second temperature, and (f) depositing a second portion of the material on the substrate while the substrate is at the second temperature, such that the first portion and the second portion exhibit different values of a property of the material. The apparatuses and systems may include a multi-station deposition apparatus and a controller having control logic for performing one or more of (a)-(f).
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公开(公告)号：US20180108529A1
公开(公告)日：2018-04-19
申请号：US15593187
申请日：2017-05-11
发明人： William T. Lee , Bart J. van Schravendijk , David Charles Smith , Michal Danek , Patrick A. Van Cleemput , Ramesh Chandrasekharan
IPC分类号： H01L21/28 , H01L21/02 , H01J37/32 , H01L29/51 , G02F1/1335
CPC分类号： H01L21/28202 , G02F1/133502 , H01J37/3244 , H01J37/32788 , H01L21/02175 , H01L21/022 , H01L21/28211 , H01L29/513
摘要： Efficient integrated sequential deposition of alternating layers of dielectric and conductor, for example oxide/metal or metal nitride, e.g., SiO2/TiN, in a single tool, and even in a single process chamber enhances throughput without compromising quality when directly depositing a OMOM stack with many layers. Conductor and dielectric film deposition of a stack of at least 20 conductor/dielectric film pairs in the same processing tool or chamber, without breaking vacuum between the film depositions, such that there is no substantial cross-contamination between the conductor and dielectric film depositions, can be achieved.
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公开(公告)号：US20170260627A1
公开(公告)日：2017-09-14
申请号：US15066550
申请日：2016-03-10
发明人： Patrick Girard Breiling , Ramesh Chandrasekharan , Edmund Minshall , Colin Smith , Andrew Duvall , Karl Leeser
IPC分类号： C23C16/455 , C23C16/50
CPC分类号： C23C16/4408 , C23C16/45536 , C23C16/45565
摘要： A substrate processing system includes a showerhead including a stem portion and a head portion. The stem portion is in fluid communication with a process gas source, and the head portion is arranged to provide process gases from the process gas source to a reaction volume of a processing chamber below the showerhead to generate plasma in the reaction volume. A suppressor is arranged above the head portion of the showerhead, extends from the stem portion toward sidewalls of the processing chamber, and is sealed against the sidewalls of the processing chamber or sealed against an enclosure surrounding the suppressor. The suppressor, the sidewalls, and a top surface of the processing chamber, the suppressor and the enclosure, or the suppressor, the enclosure, and the top surface define a partitioned volume of the processing chamber above the showerhead. The partitioned volume is in fluid communication with a purge gas source.
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