公开(公告)号：US20160056032A1

公开(公告)日：2016-02-25

申请号：US14466925

申请日：2014-08-22

申请人： Lam Research Corporation

发明人： Chloe Baldasseroni ,  Adrien LaVoie ,  Hu Kang ,  Jun Qian ,  Purushottam Kumar ,  Andrew Duvall ,  Cody Barnett ,  Mohamed Sabri ,  Ramesh Chandrasekharan ,  Karl F. Leeser ,  David C. Smith ,  Seshasayee Varadarajan ,  Edmund B. Minshall

IPC分类号： H01L21/02 ,  C23C16/46 ,  C23C16/52 ,  C23C16/455 ,  C23C16/458

CPC分类号： H01L21/0228 ,  C23C16/45527 ,  C23C16/45544 ,  C23C16/45565 ,  C23C16/45572 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/463 ,  C23C16/52 ,  H01L21/02274

摘要： Disclosed are methods of depositing films of material on semiconductor substrates. The methods may include flowing a film precursor into a processing chamber through a showerhead substantially maintained at a first temperature, and adsorbing the film precursor onto a substrate held on a substrate holder such that the precursor forms an adsorption-limited layer while the substrate holder is substantially maintained at a second temperature. The first temperature may be at least about 10° C. above the second temperature, or the first temperature may be at or below the second temperature. The methods may further include removing at least some unadsorbed film precursor from the volume surrounding the adsorbed film precursor, and thereafter reacting adsorbed film precursor to form a film layer. Also disclosed herein are apparatuses having a processing chamber, a substrate holder, a showerhead, and one or more controllers for operating the apparatus to employ the foregoing film deposition techniques.

摘要翻译： 公开了在半导体衬底上沉积材料的方法。 所述方法可以包括通过基本上保持在第一温度的喷头将膜前体流入处理室，并且将膜前体吸附到保持在基板保持器上的基板上，使得前体形成吸附限制层，同时基板保持器为 基本保持在第二温度。 第一温度可以高于第二温度至少约10℃，或第一温度可处于或低于第二温度。 所述方法还可以包括从包围吸附膜前体的体积中去除至少一些未吸附的膜前体，然后使吸附膜前体反应形成膜层。 本文还公开了具有处理室，衬底保持器，喷头和用于操作该装置以使用上述成膜技术的一个或多个控制器的装置。