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    ASYMMETRIC PEDESTAL/CARRIER RING ARRANGEMENT FOR EDGE IMPEDANCE MODULATION
    2.
    发明申请
    ASYMMETRIC PEDESTAL/CARRIER RING ARRANGEMENT FOR EDGE IMPEDANCE MODULATION 审中-公开

    公开(公告)号：US20170275756A1

    公开(公告)日：2017-09-28

    申请号：US15077844

    申请日：2016-03-22

    申请人： Lam Research Corporation

    发明人： Ryan Blaquiere ,  Ramesh Chandrasekharan ,  Shankar Swaminathan ,  Yukinori Sakiyama

    IPC分类号： C23C16/455 ,  H01L21/687 ,  H01L21/02

    CPC分类号： C23C16/45544 ,  C23C16/4585 ,  C23C16/509 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68757 ,  H01L21/68771

    摘要： Pedestal assemblies and methods for using said pedestal assemblies, used in processing chambers implemented for processing substrates are disclosed. In one example, the pedestal assembly includes a center column coupled to a lower chamber body of a processing chamber. A pedestal body is coupled to the center column. The pedestal body includes a substrate support surface and an annular step formed around a circumference of the pedestal body and surrounding the substrate support surface. Further included is a first annular ring segment disposed within the annular step. The first annular ring is defined from a conductive material. A second annular ring segment is also disposed within the annular step. The second annular ring is defined from a dielectric material. The first annular ring and the second annular ring fill the annular step around the circumference of the pedestal body. The first and second annular rings provide a fill that surrounds the substrate support and acts to modify an impedance for improving azimuthal uniformity of films deposited over the substrate using the processing chamber.

    Reducing backside deposition at wafer edge
    5.
    发明授权
    Reducing backside deposition at wafer edge 有权

    公开(公告)号：US10648079B2

    公开(公告)日：2020-05-12

    申请号：US14578126

    申请日：2014-12-19

    申请人： Lam Research Corporation

    发明人： Chloe Baldasseroni ,  Andrew Duvall ,  Ryan Blaquiere ,  Shankar Swaminathan

    IPC分类号： H01L21/687 ,  H01L21/683 ,  C23C16/458 ,  C23C14/50 ,  H01J37/32

    摘要： A process chamber for depositing a film on a wafer is provided, including: a pedestal having, a central top surface having a plurality of wafer supports configured to support the wafer at a support level above the central top surface, an annular surface at a step down from the central top surface; a carrier ring configured to be supported by carrier ring supports such that a bottom surface of the carrier ring is at a first vertical separation above the annular surface, the carrier ring having a step down surface defined relative to a top surface; wherein when the carrier ring is seated on the carrier ring supports, then the step down surface of the carrier ring is positioned at a process level that is at a second vertical separation from the support level over the top surface of the pedestal.

    Collar, conical showerheads and/or top plates for reducing recirculation in a substrate processing system
    6.
    发明授权
    Collar, conical showerheads and/or top plates for reducing recirculation in a substrate processing system 有权

    公开(公告)号：US10403474B2

    公开(公告)日：2019-09-03

    申请号：US15207035

    申请日：2016-07-11

    申请人： Lam Research Corporation

    发明人： Richard Phillips ,  Ryan Blaquiere ,  Shankar Swaminathan

    IPC分类号： C23C16/455 ,  H01J37/32 ,  C23C16/44

    摘要： A substrate processing system includes a processing chamber and a showerhead including a faceplate, a stem portion and a cylindrical base portion. A collar connects the showerhead to a top surface of the processing chamber. The collar defines a gas channel to receive secondary purge gas and a plurality of gas slits to direct the secondary purge gas from the gas channel in a radially outward and downward direction. A conical surface is arranged adjacent to the cylindrical base and around the stem portion of the showerhead. An inverted conical surface is arranged adjacent to a top surface and sidewalls of the processing chamber. The conical surface and the inverted conical surface define an angled gas channel from the plurality of gas slits to a gap defined between a radially outer portion of the cylindrical base portion and the sidewalls of the processing chamber.

    Asymmetric pedestal/carrier ring arrangement for edge impedance modulation
    7.
    发明授权
    Asymmetric pedestal/carrier ring arrangement for edge impedance modulation 有权

    公开(公告)号：US10301718B2

    公开(公告)日：2019-05-28

    申请号：US15077844

    申请日：2016-03-22

    申请人： Lam Research Corporation

    发明人： Ryan Blaquiere ,  Ramesh Chandrasekharan ,  Shankar Swaminathan ,  Yukinori Sakiyama

    IPC分类号： H01L21/687 ,  C23C16/455 ,  H01L21/67

    摘要： Pedestal assemblies and methods for using said pedestal assemblies, used in processing chambers implemented for processing substrates are disclosed. In one example, the pedestal assembly includes a center column coupled to a lower chamber body of a processing chamber. A pedestal body is coupled to the center column. The pedestal body includes a substrate support surface and an annular step formed around a circumference of the pedestal body and surrounding the substrate support surface. Further included is a first annular ring segment disposed within the annular step. The first annular ring is defined from a conductive material. A second annular ring segment is also disposed within the annular step. The second annular ring is defined from a dielectric material. The first annular ring and the second annular ring fill the annular step around the circumference of the pedestal body. The first and second annular rings provide a fill that surrounds the substrate support and acts to modify an impedance for improving azimuthal uniformity of films deposited over the substrate using the processing chamber.

    REDUCING BACKSIDE DEPOSITION AT WAFER EDGE
    8.
    发明申请
    REDUCING BACKSIDE DEPOSITION AT WAFER EDGE 审中-公开
    减少背面沉积在边缘

    公开(公告)号：US20160177444A1

    公开(公告)日：2016-06-23

    申请号：US14578126

    申请日：2014-12-19

    申请人： Lam Research Corporation

    发明人： Chloe Baldasseroni ,  Andrew Duvall ,  Ryan Blaquiere ,  Shankar Swaminathan

    IPC分类号： C23C16/455 ,  C23C16/458

    CPC分类号： C23C16/4585 ,  H01J37/32623 ,  H01L21/68735 ,  H01L21/68785

    摘要： A process chamber for depositing a film on a wafer is provided, including: a pedestal having, a central top surface having a plurality of wafer supports configured to support the wafer at a support level above the central top surface, an annular surface at a step down from the central top surface; a carrier ring configured to be supported by carrier ring supports such that a bottom surface of the carrier ring is at a first vertical separation above the annular surface, the carrier ring having a step down surface defined relative to a top surface; wherein when the carrier ring is seated on the carrier ring supports, then the step down surface of the carrier ring is positioned at a process level that is at a second vertical separation from the support level over the top surface of the pedestal.

    摘要翻译： 提供了一种用于在晶片上沉积膜的处理室，包括：基座，其具有中心顶表面，中心顶表面具有多个晶片支撑件，所述多个晶片支撑件被配置为将晶片支撑在中心顶表面上方的支撑位置处， 从中央顶面下来; 载体环，其被构造成由载体环支撑支撑，使得所述载体环的底表面在所述环形表面上方处于第一垂直间隔，所述载体环具有相对于顶表面限定的台阶面; 其中，当所述承载环位于所述承载环支撑件上时，所述承载环的所述台阶下表面被定位在处于与所述基座的顶表面上方的所述支撑位置垂直分离的处理水平处。