公开(公告)号：US20250062150A1

公开(公告)日：2025-02-20

申请号：US18933382

申请日：2024-10-31

Applicant: Lam Research Corporation

Inventor： Patrick Girard Breiling ,  Michael Philip Roberts ,  Chloe Baldasseroni ,  Ishtak Karim ,  Adrien LaVoie ,  Ramesh Chandrasekharan

IPC: H01L21/683 ,  C23C16/458 ,  H01J37/32 ,  H01L21/687

Abstract: Apparatuses and systems for pedestals are provided. An example pedestal may have a body with an upper annular seal surface that is planar, perpendicular to a vertical center axis of the body, and has a radial thickness, a lower recess surface offset from the upper annular seal surface, and a plurality of micro-contact areas (MCAs) protruding from the lower recess surface, each MCA having a top surface offset from the lower recess surface by a second distance less, and one or more electrodes within the body. The upper annular seal surface may be configured to support an outer edge of a semiconductor substrate when the semiconductor substrate is being supported by the pedestal, and the upper annular seal surface and the tops of the MCAs may be configured to support the semiconductor substrate when the semiconductor substrate is being supported by the pedestal.

公开(公告)号：US11443975B2

公开(公告)日：2022-09-13

申请号：US16836062

申请日：2020-03-31

Applicant: Lam Research Corporation

Inventor： Patrick Breiling ,  Ramesh Chandrasekharan ,  Karl Leeser ,  Paul Konkola ,  Adrien LaVoie ,  Chloe Baldasseroni ,  Shankar Swaminathan ,  Ishtak Karim ,  Yukinori Sakiyama ,  Edmund Minshall ,  Sung Je Kim ,  Andrew Duvall ,  Frank Pasquale

IPC: H01L21/687 ,  H01L21/67 ,  H01J37/32 ,  C23C16/458 ,  B05C13/02

Abstract: A pedestal for a substrate processing system includes a pedestal body including a substrate-facing surface. An annular band is arranged on the substrate-facing surface that is configured to support a radially outer edge of the substrate. A cavity is defined in the substrate-facing surface of the pedestal body and is located radially inside of the annular band. The cavity creates a volume between a bottom surface of the substrate and the substrate-facing surface of the pedestal body. A plurality of vents pass though the pedestal body and are in fluid communication with the cavity to equalize pressure on opposing faces of the substrate during processing.

公开(公告)号：US20210324521A1

公开(公告)日：2021-10-21

申请号：US17304540

申请日：2021-06-22

Applicant: Lam Research Corporation

Inventor： Tuan Nguyen ,  Eashwar Ranganathan ,  Shankar Swaminathan ,  Adrien LaVoie ,  Chloe Baldasseroni ,  Ramesh Chandrasekharan ,  Frank Loren Pasquale ,  Jennifer Leigh Petraglia

IPC: C23C16/52 ,  C23C16/448

Abstract: Methods and apparatus for use of a fill on demand ampoule are disclosed. The fill on demand ampoule may refill an ampoule with precursor concurrent with the performance of other deposition processes. The fill on demand may keep the level of precursor within the ampoule at a relatively constant level. The level may be calculated to result in an optimum head volume. The fill on demand may also keep the precursor at a temperature near that of an optimum precursor temperature. The fill on demand may occur during parts of the deposition process where the agitation of the precursor due to the filling of the ampoule with the precursor minimally effects the substrate deposition. Substrate throughput may be increased through the use of fill on demand.

公开(公告)号：US20200255945A1

公开(公告)日：2020-08-13

申请号：US16859619

申请日：2020-04-27

Applicant: LAM RESEARCH CORPORATION

Inventor： Aaron DURBIN ,  Ramesh Chandrasekharan ,  Dirk Rudolph ,  Thomas G. Jewell

IPC: C23C16/52 ,  H05B3/26 ,  C23C16/46 ,  C23C16/455 ,  H05B1/02

Abstract: A method for controlling temperature of a substrate support includes receiving first and second currents corresponding to first and second heater elements, respectively, of a substrate support, receiving first and second voltages corresponding to the first and second heater elements, respectively, calculating a first resistance of the first heater element based on the first voltage and the first current, calculating a second resistance of the second heater element based on the second voltage and the second current, calculating a first temperature of a first zone of the substrate support based on the first resistance and stored data correlating resistances to temperatures, calculating a second temperature of a second zone of the substrate support based on the second resistance and the stored data, and selectively adjusting the stored data based on a comparison between a sensed temperature and at least one of the calculated first temperature and second temperature.

公开(公告)号：US20180334746A1

公开(公告)日：2018-11-22

申请号：US15601876

申请日：2017-05-22

Applicant: Lam Research Corporation

Inventor： Patrick Breiling ,  Ramesh Chandrasekharan ,  Chloe Baldasseroni ,  Sung Je Kim ,  lshtak Karim ,  Mike Roberts ,  Richard Phillips ,  Purushottam Kumar ,  Adrien LaVoie

IPC: C23C16/455 ,  C23C16/50 ,  C23C16/458 ,  H01L21/687

CPC classification number: C23C16/45544 ,  C23C16/458 ,  C23C16/50 ,  H01L21/68771

Abstract: A pedestal assembly for a plasma processing system is provided. The assembly includes a pedestal with central top surface, e.g., mesa, and the central top surface extends from a center of the central top surface to an outer diameter of the central top surface. An annular surface surrounds the central top surface. The annular top surface is disposed at step down from the central top surface. A plurality of wafer supports project out of the central top surface at a support elevation distance above the central top surface. The plurality of wafer supports are evenly arranged around an inner radius of the center top surface. The inner radius is located between the center of the central top surface and less than a mid-radius that is approximately half way between the center of the pedestal and the outer diameter of the central top surface. A carrier ring configured for positioning over the annular surface of the pedestal is provided. The carrier ring has a carrier ring inner diameter, a carrier ring outer diameter, and a ledge surface that is annularly disposed around a top inner region of the carrier ring. The ledge surface is recessed below a top outer region of the carrier ring. A plurality of carrier ring supports are disposed outside of the annular surface of the pedestal. The carrier ring supports define a carrier ring elevation dimension of the carrier ring, above the central top surface of the pedestal, when the carrier ring rests upon the plurality of carrier ring supports. The carrier ring elevation dimension is configured to be higher than the central top surface of the pedestal than the support elevation distance.

公开(公告)号：US10128160B2

公开(公告)日：2018-11-13

申请号：US15818223

申请日：2017-11-20

Applicant: Lam Research Corporation

Inventor： Yukinori Sakiyama ,  Ishtak Karim ,  Yaswanth Rangineni ,  Adrien LaVoie ,  Ramesh Chandrasekharan ,  Edward Augustyniak ,  Douglas Keil

IPC: B05C11/00 ,  H01L21/66 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  C23C16/458 ,  H01L21/263 ,  H01L21/683 ,  C23C16/50 ,  C23C16/52 ,  C23C16/455 ,  C23C16/509 ,  H01L21/02

Abstract: A wafer is positioned on a wafer support apparatus beneath an electrode such that a plasma generation region exists between the wafer and the electrode. Radiofrequency power is supplied to the electrode to generate a plasma within the plasma generation region during multiple sequential plasma processing cycles of a plasma processing operation. At least one electrical sensor connected to the electrode measures a radiofrequency parameter on the electrode during each of the multiple sequential plasma processing cycles. A value of the radiofrequency parameter as measured on the electrode is determined for each of the multiple sequential plasma processing cycles. A determination is made as to whether or not any indicatory trend or change exists in the values of the radiofrequency parameter as measured on the electrode over the multiple sequential plasma processing cycles, where the indicatory trend or change indicates formation of a plasma instability during the plasma processing operation.

公开(公告)号：US10020188B2

公开(公告)日：2018-07-10

申请号：US15817579

申请日：2017-11-20

Applicant: LAM RESEARCH CORPORATION

Inventor： James S. Sims ,  Jon Henri ,  Ramesh Chandrasekharan ,  Andrew John McKerrow ,  Seshasayee Varadarajan ,  Kathryn Merced Kelchner

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/455 ,  C23C16/50 ,  C23C16/34 ,  C23C16/02

CPC classification number: H01L21/0228 ,  C23C16/0227 ,  C23C16/0272 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45525 ,  C23C16/4554 ,  C23C16/50 ,  H01J37/32082 ,  H01J37/32467 ,  H01J37/32513 ,  H01J37/32532 ,  H01J37/3255 ,  H01J37/32715 ,  H01J37/32862 ,  H01J2237/3321 ,  H01J2237/335 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274

Abstract: A method of depositing ALD films on semiconductor substrates processed in a micro-volume of a plasma enhanced atomic layer deposition (PEALD) reaction chamber wherein a single semiconductor substrate is supported on a ceramic surface of a pedestal and process gas is introduced through gas outlets in a ceramic surface of a showerhead into a reaction zone above the semiconductor substrate, includes (a) cleaning the ceramic surfaces of the pedestal and showerhead with a fluorine plasma such that aluminum-rich byproducts are formed on the ceramic surfaces, (b) depositing a conformal halide-free atomic layer deposition (ALD) oxide undercoating on the ceramic surfaces so as to cover the aluminum-rich byproducts, (c) depositing a pre-coating on the halide-free ALD oxide undercoating, and (d) processing a batch of semiconductor substrates by transferring each semiconductor substrate into the reaction chamber and depositing a film on the semiconductor substrate supported on the ceramic surface of the pedestal.

公开(公告)号：US20180076100A1

公开(公告)日：2018-03-15

申请号：US15818223

申请日：2017-11-20

Applicant: Lam Research Corporation

Inventor： Yukinori Sakiyama ,  Ishtak Karim ,  Yaswanth Rangineni ,  Adrien LaVoie ,  Ramesh Chandrasekharan ,  Edward Augustyniak ,  Douglas Keil

IPC: H01L21/66 ,  H01J37/32 ,  C23C16/52 ,  C23C16/458 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/02 ,  C23C16/50 ,  H01L21/683 ,  C23C16/455 ,  C23C16/509 ,  H01L21/263

CPC classification number: H01L22/20 ,  C23C16/45565 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/50 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32137 ,  H01J37/32715 ,  H01J37/32935 ,  H01J37/3299 ,  H01J2237/334 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/263 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67201 ,  H01L21/683 ,  H01L22/12

Abstract: A wafer is positioned on a wafer support apparatus beneath an electrode such that a plasma generation region exists between the wafer and the electrode. Radiofrequency power is supplied to the electrode to generate a plasma within the plasma generation region during multiple sequential plasma processing cycles of a plasma processing operation. At least one electrical sensor connected to the electrode measures a radiofrequency parameter on the electrode during each of the multiple sequential plasma processing cycles. A value of the radiofrequency parameter as measured on the electrode is determined for each of the multiple sequential plasma processing cycles. A determination is made as to whether or not any indicatory trend or change exists in the values of the radiofrequency parameter as measured on the electrode over the multiple sequential plasma processing cycles, where the indicatory trend or change indicates formation of a plasma instability during the plasma processing operation.

公开(公告)号：US09824941B2

公开(公告)日：2017-11-21

申请号：US15074853

申请日：2016-03-18

Applicant: Lam Research Corporation

Inventor： Yukinori Sakiyama ,  Ishtak Karim ,  Yaswanth Rangineni ,  Adrien LaVoie ,  Ramesh Chandrasekharan ,  Edward Augustyniak ,  Douglas Keil

IPC: H01L21/00 ,  H01L21/66 ,  H01L21/67 ,  H01L21/3065 ,  H01J37/32

CPC classification number: H01L22/20 ,  C23C16/45565 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/50 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32137 ,  H01J37/32715 ,  H01J37/32935 ,  H01J37/3299 ,  H01J2237/334 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/263 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67201 ,  H01L21/683 ,  H01L22/12

Abstract: A wafer is positioned on a wafer support apparatus beneath an electrode such that a plasma generation region exists between the wafer and the electrode. Radiofrequency power is supplied to the electrode to generate a plasma within the plasma generation region during multiple sequential plasma processing cycles of a plasma processing operation. At least one electrical sensor connected to the electrode measures a radiofrequency parameter on the electrode during each of the multiple sequential plasma processing cycles. A value of the radiofrequency parameter as measured on the electrode is determined for each of the multiple sequential plasma processing cycles. A determination is made as to whether or not any indicatory trend or change exists in the values of the radiofrequency parameter as measured on the electrode over the multiple sequential plasma processing cycles, where the indicatory trend or change indicates formation of a plasma instability during the plasma processing operation.

公开(公告)号：US09236244B2

公开(公告)日：2016-01-12

申请号：US14571191

申请日：2014-12-15

Applicant: Lam Research Corporation

Inventor： Ramesh Chandrasekharan ,  Adrien LaVoie ,  Damien Slevin ,  Karl Leeser

IPC: H01L21/31 ,  C23C16/00 ,  H01L21/02 ,  H01L21/67 ,  C23C16/458 ,  C23C16/505 ,  C23C16/52 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/45527 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45561 ,  C23C16/458 ,  C23C16/505 ,  C23C16/52 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/67207

Abstract: Disclosed herein are methods of depositing layers of material on multiple semiconductor substrates at multiple processing stations within one or more reaction chambers. The methods may include dosing a first substrate with film precursor at a first processing station and dosing a second substrate with film precursor at a second processing station with precursor flowing from a common source, wherein the timing of said dosing is staggered such that the first substrate is dosed during a first dosing phase during which the second substrate is not substantially dosed, and the second substrate is dosed during a second dosing phase during which the first substrate is not substantially dosed. Also disclosed herein are apparatuses having a plurality of processing stations contained within one or more reaction chambers and a controller with machine-readable instructions for staggering the dosing of first and second substrates at first and second processing stations.