公开(公告)号：US20200219757A1

公开(公告)日：2020-07-09

申请号：US16820003

申请日：2020-03-16

申请人： Lam Research Corporation

发明人： Patrick BREILING ,  Ramesh Chandrasekharan ,  Karl Leeser ,  Paul Konkola ,  Adrien LaVoie ,  Chloe Baldasseroni ,  Shankar Swaminathan ,  lshtak Karim ,  Yukinori Sakiyama ,  Edmund Minshall ,  Sung Je Kim ,  Andrew Duvall ,  Frank Pasquale

IPC分类号： H01L21/687 ,  H01L21/67 ,  H01J37/32

摘要： A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.

公开(公告)号：US20180334746A1

公开(公告)日：2018-11-22

申请号：US15601876

申请日：2017-05-22

申请人： Lam Research Corporation

发明人： Patrick Breiling ,  Ramesh Chandrasekharan ,  Chloe Baldasseroni ,  Sung Je Kim ,  lshtak Karim ,  Mike Roberts ,  Richard Phillips ,  Purushottam Kumar ,  Adrien LaVoie

IPC分类号： C23C16/455 ,  C23C16/50 ,  C23C16/458 ,  H01L21/687

CPC分类号： C23C16/45544 ,  C23C16/458 ,  C23C16/50 ,  H01L21/68771

摘要： A pedestal assembly for a plasma processing system is provided. The assembly includes a pedestal with central top surface, e.g., mesa, and the central top surface extends from a center of the central top surface to an outer diameter of the central top surface. An annular surface surrounds the central top surface. The annular top surface is disposed at step down from the central top surface. A plurality of wafer supports project out of the central top surface at a support elevation distance above the central top surface. The plurality of wafer supports are evenly arranged around an inner radius of the center top surface. The inner radius is located between the center of the central top surface and less than a mid-radius that is approximately half way between the center of the pedestal and the outer diameter of the central top surface. A carrier ring configured for positioning over the annular surface of the pedestal is provided. The carrier ring has a carrier ring inner diameter, a carrier ring outer diameter, and a ledge surface that is annularly disposed around a top inner region of the carrier ring. The ledge surface is recessed below a top outer region of the carrier ring. A plurality of carrier ring supports are disposed outside of the annular surface of the pedestal. The carrier ring supports define a carrier ring elevation dimension of the carrier ring, above the central top surface of the pedestal, when the carrier ring rests upon the plurality of carrier ring supports. The carrier ring elevation dimension is configured to be higher than the central top surface of the pedestal than the support elevation distance.

公开(公告)号：US20180122685A1

公开(公告)日：2018-05-03

申请号：US15431088

申请日：2017-02-13

申请人： Lam Research Corporation

发明人： Patrick Breiling ,  Ramesh Chandrasekharan ,  Karl Leeser ,  Paul Konkola ,  Adrien LaVoie ,  Chloe Baldasseroni ,  Shankar Swaminathan ,  lshtak Karim ,  Yukinori Sakiyama ,  Edmund Minshall ,  Sung Je Kim ,  Andrew Duvall ,  Frank Pasquale

IPC分类号： H01L21/687 ,  H01L21/67 ,  H01J37/32

CPC分类号： H01L21/68785 ,  H01J37/32082 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/67017 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68757

摘要： A pedestal for a substrate processing system includes a pedestal body including a substrate-facing surface. An annular band is arranged on the substrate-facing surface that is configured to support a radially outer edge of the substrate. A cavity is defined in the substrate-facing surface of the pedestal body and is located radially inside of the annular band. The cavity creates a volume between a bottom surface of the substrate and the substrate-facing surface of the pedestal body. A plurality of vents pass though the pedestal body and are in fluid communication with the cavity to equalize pressure on opposing faces of the substrate during processing.