公开(公告)号：US20170260627A1

公开(公告)日：2017-09-14

申请号：US15066550

申请日：2016-03-10

Applicant: Lam Research Corporation

Inventor： Patrick Girard Breiling ,  Ramesh Chandrasekharan ,  Edmund Minshall ,  Colin Smith ,  Andrew Duvall ,  Karl Leeser

IPC: C23C16/455 ,  C23C16/50

CPC classification number: C23C16/4408 ,  C23C16/45536 ,  C23C16/45565

Abstract: A substrate processing system includes a showerhead including a stem portion and a head portion. The stem portion is in fluid communication with a process gas source, and the head portion is arranged to provide process gases from the process gas source to a reaction volume of a processing chamber below the showerhead to generate plasma in the reaction volume. A suppressor is arranged above the head portion of the showerhead, extends from the stem portion toward sidewalls of the processing chamber, and is sealed against the sidewalls of the processing chamber or sealed against an enclosure surrounding the suppressor. The suppressor, the sidewalls, and a top surface of the processing chamber, the suppressor and the enclosure, or the suppressor, the enclosure, and the top surface define a partitioned volume of the processing chamber above the showerhead. The partitioned volume is in fluid communication with a purge gas source.

公开(公告)号：US20200227304A1

公开(公告)日：2020-07-16

申请号：US16836062

申请日：2020-03-31

Applicant: Lam Research Corporation

Inventor： Patrick Breiling ,  Ramesh Chandrasekharan ,  Karl Leeser ,  Paul Konkola ,  Adrien LaVoie ,  Chloe Baldasseroni ,  Shankar Swaminathan ,  Ishtak Karim ,  Yukinori Sakiyama ,  Edmund Minshall ,  Sung Je Kim ,  Andrew Duvall ,  Frank Pasquale

IPC: H01L21/687 ,  H01L21/67 ,  H01J37/32

Abstract: A pedestal for a substrate processing system includes a pedestal body including a substrate-facing surface. An annular band is arranged on the substrate-facing surface that is configured to support a radially outer edge of the substrate. A cavity is defined in the substrate-facing surface of the pedestal body and is located radially inside of the annular band. The cavity creates a volume between a bottom surface of the substrate and the substrate-facing surface of the pedestal body. A plurality of vents pass though the pedestal body and are in fluid communication with the cavity to equalize pressure on opposing faces of the substrate during processing.

公开(公告)号：US20200219757A1

公开(公告)日：2020-07-09

申请号：US16820003

申请日：2020-03-16

Applicant: Lam Research Corporation

Inventor： Patrick BREILING ,  Ramesh Chandrasekharan ,  Karl Leeser ,  Paul Konkola ,  Adrien LaVoie ,  Chloe Baldasseroni ,  Shankar Swaminathan ,  lshtak Karim ,  Yukinori Sakiyama ,  Edmund Minshall ,  Sung Je Kim ,  Andrew Duvall ,  Frank Pasquale

IPC: H01L21/687 ,  H01L21/67 ,  H01J37/32

Abstract: A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.

公开(公告)号：US09758868B1

公开(公告)日：2017-09-12

申请号：US15066550

申请日：2016-03-10

Applicant: Lam Research Corporation

Inventor： Patrick Girard Breiling ,  Ramesh Chandrasekharan ,  Edmund Minshall ,  Colin Smith ,  Andrew Duvall ,  Karl Leeser

IPC: C23C16/455 ,  C23C16/50

CPC classification number: C23C16/4408 ,  C23C16/45536 ,  C23C16/45565

Abstract: A substrate processing system includes a showerhead including a stem portion and a head portion. The stem portion is in fluid communication with a process gas source, and the head portion is arranged to provide process gases from the process gas source to a reaction volume of a processing chamber below the showerhead to generate plasma in the reaction volume. A suppressor is arranged above the head portion of the showerhead, extends from the stem portion toward sidewalls of the processing chamber, and is sealed against the sidewalls of the processing chamber or sealed against an enclosure surrounding the suppressor. The suppressor, the sidewalls, and a top surface of the processing chamber, the suppressor and the enclosure, or the suppressor, the enclosure, and the top surface define a partitioned volume of the processing chamber above the showerhead. The partitioned volume is in fluid communication with a purge gas source.

公开(公告)号：US11443975B2

公开(公告)日：2022-09-13

申请号：US16836062

申请日：2020-03-31

Applicant: Lam Research Corporation

Inventor： Patrick Breiling ,  Ramesh Chandrasekharan ,  Karl Leeser ,  Paul Konkola ,  Adrien LaVoie ,  Chloe Baldasseroni ,  Shankar Swaminathan ,  Ishtak Karim ,  Yukinori Sakiyama ,  Edmund Minshall ,  Sung Je Kim ,  Andrew Duvall ,  Frank Pasquale

IPC: H01L21/687 ,  H01L21/67 ,  H01J37/32 ,  C23C16/458 ,  B05C13/02

Abstract: A pedestal for a substrate processing system includes a pedestal body including a substrate-facing surface. An annular band is arranged on the substrate-facing surface that is configured to support a radially outer edge of the substrate. A cavity is defined in the substrate-facing surface of the pedestal body and is located radially inside of the annular band. The cavity creates a volume between a bottom surface of the substrate and the substrate-facing surface of the pedestal body. A plurality of vents pass though the pedestal body and are in fluid communication with the cavity to equalize pressure on opposing faces of the substrate during processing.

公开(公告)号：US20180122685A1

公开(公告)日：2018-05-03

申请号：US15431088

申请日：2017-02-13

Applicant: Lam Research Corporation

Inventor： Patrick Breiling ,  Ramesh Chandrasekharan ,  Karl Leeser ,  Paul Konkola ,  Adrien LaVoie ,  Chloe Baldasseroni ,  Shankar Swaminathan ,  lshtak Karim ,  Yukinori Sakiyama ,  Edmund Minshall ,  Sung Je Kim ,  Andrew Duvall ,  Frank Pasquale

IPC: H01L21/687 ,  H01L21/67 ,  H01J37/32

CPC classification number: H01L21/68785 ,  H01J37/32082 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/67017 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68757

Abstract: A pedestal for a substrate processing system includes a pedestal body including a substrate-facing surface. An annular band is arranged on the substrate-facing surface that is configured to support a radially outer edge of the substrate. A cavity is defined in the substrate-facing surface of the pedestal body and is located radially inside of the annular band. The cavity creates a volume between a bottom surface of the substrate and the substrate-facing surface of the pedestal body. A plurality of vents pass though the pedestal body and are in fluid communication with the cavity to equalize pressure on opposing faces of the substrate during processing.