- 专利标题： Planar substrate edge contact with open volume equalization pathways and side containment
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申请号： US16836062申请日： 2020-03-31
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公开(公告)号： US11443975B2公开(公告)日： 2022-09-13
- 发明人: Patrick Breiling , Ramesh Chandrasekharan , Karl Leeser , Paul Konkola , Adrien LaVoie , Chloe Baldasseroni , Shankar Swaminathan , Ishtak Karim , Yukinori Sakiyama , Edmund Minshall , Sung Je Kim , Andrew Duvall , Frank Pasquale
- 申请人： Lam Research Corporation
- 申请人地址： US CA Fremont
- 专利权人： Lam Research Corporation
- 当前专利权人： Lam Research Corporation
- 当前专利权人地址： US CA Fremont
- 主分类号： H01L21/687
- IPC分类号： H01L21/687 ; H01L21/67 ; H01J37/32 ; C23C16/458 ; B05C13/02
摘要：
A pedestal for a substrate processing system includes a pedestal body including a substrate-facing surface. An annular band is arranged on the substrate-facing surface that is configured to support a radially outer edge of the substrate. A cavity is defined in the substrate-facing surface of the pedestal body and is located radially inside of the annular band. The cavity creates a volume between a bottom surface of the substrate and the substrate-facing surface of the pedestal body. A plurality of vents pass though the pedestal body and are in fluid communication with the cavity to equalize pressure on opposing faces of the substrate during processing.
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