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公开(公告)号：US11781650B2
公开(公告)日：2023-10-10
申请号：US15843849
申请日：2017-12-15
IPC分类号： F16J15/02 , H01J37/32 , H02N13/00 , H01L21/683
CPC分类号： F16J15/021 , H01J37/3255 , H01J37/32495 , H01J37/32532 , H01J37/32568 , H01J37/32715 , H01J37/32724 , H01L21/6831 , H01L21/6833 , H01L21/6838 , H02N13/00 , Y10T29/49908
摘要： An edge seal for sealing an outer surface of a lower electrode assembly configured to support a semiconductor substrate in a plasma processing chamber, the lower electrode assembly including an annular groove defined between a lower member and an upper member of the lower electrode assembly. The edge seal includes an elastomeric band configured to be arranged within the groove, the elastomeric band having an annular upper surface, an annular lower surface, an inner surface, and an outer surface. When the elastomeric band is in an uncompressed state, the outer surface of the elastomeric band is concave. When the upper and lower surfaces are axially compressed at least 1% such that the elastomeric band is in a compressed state, an outward bulging of the outer surface is not greater than a predetermined distance. The predetermined distance corresponds to a maximum outer diameter of the elastomeric band in the uncompressed state.
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2.发明授权公开(公告)号：US11443975B2
公开(公告)日：2022-09-13
申请号：US16836062
申请日：2020-03-31
发明人： Patrick Breiling , Ramesh Chandrasekharan , Karl Leeser , Paul Konkola , Adrien LaVoie , Chloe Baldasseroni , Shankar Swaminathan , Ishtak Karim , Yukinori Sakiyama , Edmund Minshall , Sung Je Kim , Andrew Duvall , Frank Pasquale
IPC分类号： H01L21/687 , H01L21/67 , H01J37/32 , C23C16/458 , B05C13/02
摘要： A pedestal for a substrate processing system includes a pedestal body including a substrate-facing surface. An annular band is arranged on the substrate-facing surface that is configured to support a radially outer edge of the substrate. A cavity is defined in the substrate-facing surface of the pedestal body and is located radially inside of the annular band. The cavity creates a volume between a bottom surface of the substrate and the substrate-facing surface of the pedestal body. A plurality of vents pass though the pedestal body and are in fluid communication with the cavity to equalize pressure on opposing faces of the substrate during processing.
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3.发明申请公开(公告)号：US20180334746A1
公开(公告)日：2018-11-22
申请号：US15601876
申请日：2017-05-22
发明人： Patrick Breiling , Ramesh Chandrasekharan , Chloe Baldasseroni , Sung Je Kim , lshtak Karim , Mike Roberts , Richard Phillips , Purushottam Kumar , Adrien LaVoie
IPC分类号： C23C16/455 , C23C16/50 , C23C16/458 , H01L21/687
CPC分类号： C23C16/45544 , C23C16/458 , C23C16/50 , H01L21/68771
摘要： A pedestal assembly for a plasma processing system is provided. The assembly includes a pedestal with central top surface, e.g., mesa, and the central top surface extends from a center of the central top surface to an outer diameter of the central top surface. An annular surface surrounds the central top surface. The annular top surface is disposed at step down from the central top surface. A plurality of wafer supports project out of the central top surface at a support elevation distance above the central top surface. The plurality of wafer supports are evenly arranged around an inner radius of the center top surface. The inner radius is located between the center of the central top surface and less than a mid-radius that is approximately half way between the center of the pedestal and the outer diameter of the central top surface. A carrier ring configured for positioning over the annular surface of the pedestal is provided. The carrier ring has a carrier ring inner diameter, a carrier ring outer diameter, and a ledge surface that is annularly disposed around a top inner region of the carrier ring. The ledge surface is recessed below a top outer region of the carrier ring. A plurality of carrier ring supports are disposed outside of the annular surface of the pedestal. The carrier ring supports define a carrier ring elevation dimension of the carrier ring, above the central top surface of the pedestal, when the carrier ring rests upon the plurality of carrier ring supports. The carrier ring elevation dimension is configured to be higher than the central top surface of the pedestal than the support elevation distance.
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公开(公告)号：US10351953B2
公开(公告)日：2019-07-16
申请号：US15461417
申请日：2017-03-16
发明人： Jun Qian , Purushottam Kumar , Adrien LaVoie , You Zhai , Jeremiah Baldwin , Sung Je Kim
IPC分类号： C23C16/52 , C23C16/448 , C23C16/455 , C23C16/505
摘要： A method for delivering vaporized precursor in a substrate processing system using a vapor delivery system includes (a) selectively supplying push gas to an inlet of an ampoule storing liquid and vaporized precursor during a deposition period of a substrate; (b) measuring a pressure of the push gas and the vaporized precursor at an outlet of the ampoule during the deposition period; (c) determining a maximum pressure during the deposition period; (d) determining an integrated area for the deposition period based on a sampling interval and the maximum pressure during the sampling interval; and (e) repeating (a), (b), (c) and (d) for a plurality of the deposition periods for the substrate.
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5.发明申请公开(公告)号：US20180265983A1
公开(公告)日：2018-09-20
申请号：US15461417
申请日：2017-03-16
发明人： Jun Qian , Purushottam Kumar , Adrien LaVoie , You Zhai , Jeremiah Baldwin , Sung Je Kim
IPC分类号： C23C16/455 , C23C16/52 , C23C16/505
CPC分类号： C23C16/45557 , C23C16/4485 , C23C16/45561 , C23C16/505 , C23C16/52
摘要： A method for delivering vaporized precursor in a substrate processing system using a vapor delivery system includes (a) selectively supplying push gas to an inlet of an ampoule storing liquid and vaporized precursor during a deposition period of a substrate; (b) measuring a pressure of the push gas and the vaporized precursor at an outlet of the ampoule during the deposition period; (c) determining a maximum pressure during the deposition period; (d) determining an integrated area for the deposition period based on a sampling interval and the maximum pressure during the sampling interval; and (e) repeating (a), (b), (c) and (d) for a plurality of the deposition periods for the substrate.
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公开(公告)号：US20180171473A1
公开(公告)日：2018-06-21
申请号：US15385813
申请日：2016-12-20
发明人： Pulkit Agarwal , Ishtak Karim , Purushottam Kumar , Adrien LaVoie , Sung Je Kim , Patrick Breiling
IPC分类号： C23C16/458 , H01L21/66 , H01L21/02 , C23C16/455 , C23C16/50
CPC分类号： C23C16/4581 , C23C16/4585 , C23C16/50 , H01L21/68735 , H01L21/68764 , H01L21/68771
摘要： A semiconductor system includes a chamber, a pedestal disposed in the chamber, and a focus ring that surrounds the pedestal. The pedestal has a center region for supporting a central region of a substrate, e.g., a wafer. The focus ring is configured to surround the center region of the pedestal. The focus ring has an annular support region that extends between an inner portion of the focus ring and an outer portion of the focus ring. The annular support region, which is disposed at an angle relative to a horizontal line, provides a knife-edge contact for the substrate when present over the center region of the pedestal and the annular support region of the focus ring. The knife-edge contact between the edge of the substrate and the annular support region of the focus ring disables chemical access to the substrate backside and thereby reduces unwanted backside deposition.
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7.发明申请公开(公告)号：US20180122685A1
公开(公告)日：2018-05-03
申请号：US15431088
申请日：2017-02-13
发明人： Patrick Breiling , Ramesh Chandrasekharan , Karl Leeser , Paul Konkola , Adrien LaVoie , Chloe Baldasseroni , Shankar Swaminathan , lshtak Karim , Yukinori Sakiyama , Edmund Minshall , Sung Je Kim , Andrew Duvall , Frank Pasquale
IPC分类号： H01L21/687 , H01L21/67 , H01J37/32
CPC分类号： H01L21/68785 , H01J37/32082 , H01J37/32715 , H01J2237/334 , H01L21/67017 , H01L21/68735 , H01L21/68742 , H01L21/68757
摘要： A pedestal for a substrate processing system includes a pedestal body including a substrate-facing surface. An annular band is arranged on the substrate-facing surface that is configured to support a radially outer edge of the substrate. A cavity is defined in the substrate-facing surface of the pedestal body and is located radially inside of the annular band. The cavity creates a volume between a bottom surface of the substrate and the substrate-facing surface of the pedestal body. A plurality of vents pass though the pedestal body and are in fluid communication with the cavity to equalize pressure on opposing faces of the substrate during processing.
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公开(公告)号：US20240077138A1
公开(公告)日：2024-03-07
申请号：US18377371
申请日：2023-10-06
IPC分类号： F16J15/02 , H01J37/32 , H01L21/683 , H02N13/00
CPC分类号： F16J15/021 , H01J37/32495 , H01J37/32532 , H01J37/3255 , H01J37/32568 , H01J37/32715 , H01J37/32724 , H01L21/6831 , H01L21/6833 , H01L21/6838 , H02N13/00 , Y10T29/49908
摘要： An edge seal for sealing an outer surface of a lower electrode assembly configured to support a semiconductor substrate in a plasma processing chamber, the lower electrode assembly including an annular groove defined between a lower member and an upper member of the lower electrode assembly. The edge seal includes an elastomeric band configured to be arranged within the groove, the elastomeric band having an annular upper surface, an annular lower surface, an inner surface, and an outer surface. When the elastomeric band is in an uncompressed state, the outer surface of the elastomeric band is concave. When the upper and lower surfaces are axially compressed at least 1% such that the elastomeric band is in a compressed state, an outward bulging of the outer surface is not greater than a predetermined distance. The predetermined distance corresponds to a maximum outer diameter of the elastomeric band in the uncompressed state.
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公开(公告)号：US11255017B2
公开(公告)日：2022-02-22
申请号：US16456409
申请日：2019-06-28
发明人： Jun Qian , Purushottam Kumar , Adrien Lavoie , You Zhai , Jeremiah Baldwin , Sung Je Kim
IPC分类号： C23C16/52 , C23C16/455
摘要： A method for delivering vaporized precursor in a substrate processing system using a vapor delivery system includes (a) selectively supplying push gas to an inlet of an ampoule storing liquid and vaporized precursor during a deposition period of a substrate; (b) measuring a pressure of the push gas and the vaporized precursor at an outlet of the ampoule during the deposition period; (c) determining a maximum pressure during the deposition period; (d) determining an integrated area for the deposition period based on a sampling interval and the maximum pressure during the sampling interval; and (e) repeating (a), (b), (c) and (d) for a plurality of the deposition periods for the substrate.
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10.发明申请公开(公告)号：US20200227304A1
公开(公告)日：2020-07-16
申请号：US16836062
申请日：2020-03-31
发明人： Patrick Breiling , Ramesh Chandrasekharan , Karl Leeser , Paul Konkola , Adrien LaVoie , Chloe Baldasseroni , Shankar Swaminathan , Ishtak Karim , Yukinori Sakiyama , Edmund Minshall , Sung Je Kim , Andrew Duvall , Frank Pasquale
IPC分类号： H01L21/687 , H01L21/67 , H01J37/32
摘要： A pedestal for a substrate processing system includes a pedestal body including a substrate-facing surface. An annular band is arranged on the substrate-facing surface that is configured to support a radially outer edge of the substrate. A cavity is defined in the substrate-facing surface of the pedestal body and is located radially inside of the annular band. The cavity creates a volume between a bottom surface of the substrate and the substrate-facing surface of the pedestal body. A plurality of vents pass though the pedestal body and are in fluid communication with the cavity to equalize pressure on opposing faces of the substrate during processing.
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