公开(公告)号：US12112980B2

公开(公告)日：2024-10-08

申请号：US17304697

申请日：2021-06-24

Applicant: Lam Research Corporation

Inventor： Patrick A. van Cleemput ,  Seshasayee Varadarajan ,  Bart J. van Schravendijk

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/311 ,  H01L21/67 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L21/7682 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31122 ,  H01L21/67069 ,  H01L21/67259 ,  H01L21/768 ,  H01L21/76897 ,  H01L29/41775 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/41791

Abstract: Tin oxide films are used to create air gaps during semiconductor substrate processing. Tin oxide films, disposed between exposed layers of other materials, such as SiO2 and SiN can be selectively etched using a plasma formed in an H2-containing process gas. The etching creates a recessed feature in place of the tin oxide between the surrounding materials. A third material, such as SiO2 is deposited over the resulting recessed feature without fully filling the recessed feature, forming an air gap. A method for selectively etching tin oxide in a presence of SiO2, SiC, SiN, SiOC, SiNO, SiCNO, or SiCN, includes, in some embodiments, contacting the substrate with a plasma formed in a process gas comprising at least about 50% H2. Etching of tin oxide can be performed without using an external bias at the substrate and is preferably performed at a temperature of less than about 100° C.

公开(公告)号：US10347547B2

公开(公告)日：2019-07-09

申请号：US15232708

申请日：2016-08-09

Applicant: Lam Research Corporation

Inventor： Seshasayee Varadarajan ,  Aaron R. Fellis ,  Andrew John McKerrow ,  James Samuel Sims ,  Ramesh Chandrasekharan ,  Jon Henri

IPC: H01L21/66 ,  H01L21/02 ,  C23C16/455 ,  C23C16/50 ,  C23C16/52 ,  C23C16/458 ,  C23C16/46 ,  C23C16/505 ,  C23C16/54 ,  H01L21/67 ,  H01L21/677

Abstract: Disclosed are methods of and apparatuses and systems for depositing a film in a multi-station deposition apparatus. The methods may include: (a) providing a substrate to a first station of the apparatus, (b) adjusting the temperature of the substrate to a first temperature, (c) depositing a first portion of the material on the substrate while the substrate is at the first temperature in the first station, (d) transferring the substrate to the second station, (e) adjusting the temperature of the substrate to a second temperature, and (f) depositing a second portion of the material on the substrate while the substrate is at the second temperature, such that the first portion and the second portion exhibit different values of a property of the material. The apparatuses and systems may include a multi-station deposition apparatus and a controller having control logic for performing one or more of (a)-(f).

公开(公告)号：US20180233398A1

公开(公告)日：2018-08-16

申请号：US15893458

申请日：2018-02-09

Applicant: Lam Research Corporation

Inventor： Patrick A. Van Cleemput ,  Seshasayee Varadarajan ,  Bart J. van Schravendijk

IPC: H01L21/768 ,  H01L29/417 ,  H01L29/66 ,  H01L21/311 ,  H01L21/67

CPC classification number: H01L21/7682 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31122 ,  H01L21/67069 ,  H01L21/67259 ,  H01L21/76897 ,  H01L29/41775 ,  H01L29/41791 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/785

Abstract: Tin oxide films are used to create air gaps during semiconductor substrate processing. Tin oxide films, disposed between exposed layers of other materials, such as SiO2 and SiN can be selectively etched using a plasma formed in an H2-containing process gas. The etching creates a recessed feature in place of the tin oxide between the surrounding materials. A third material, such as SiO2 is deposited over the resulting recessed feature without fully filling the recessed feature, forming an air gap. A method for selectively etching tin oxide in a presence of SiO2, SiC, SiN, SiOC, SiNO, SiCNO, or SiCN, includes, in some embodiments, contacting the substrate with a plasma formed in a process gas comprising at least about 50% H2. Etching of tin oxide can be performed without using an external bias at the substrate and is preferably performed at a temperature of less than about 100° C.

公开(公告)号：US09601693B1

公开(公告)日：2017-03-21

申请号：US14935317

申请日：2015-11-06

Applicant: Lam Research Corporation

Inventor： Jon Henri ,  Dennis M. Hausmann ,  Seshasayee Varadarajan ,  Bhadri N. Varadarajan

IPC: H01L21/8234 ,  H01L21/8244 ,  H01L45/00

CPC classification number: H01L45/16 ,  H01L45/06 ,  H01L45/065 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1293 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144

Abstract: Methods of depositing silicon nitride encapsulation layers by atomic layer deposition over memory devices including chalcogenide material are provided herein. Methods include using iodine-containing silicon precursors and depositing thermally using ammonia or hydrazine as a second reactant, or iodine-containing silicon precursors and depositing using a nitrogen-based or hydrogen-based plasma.

公开(公告)号：US09029258B2

公开(公告)日：2015-05-12

申请号：US13759938

申请日：2013-02-05

Applicant: Lam Research Corporation

Inventor： Praveen Reddy Nalla ,  Novy Sastrawati Tjokro ,  Artur Kolics ,  Seshasayee Varadarajan

IPC: H01L23/538 ,  H01L23/532 ,  H01L21/02 ,  H01L23/48

CPC classification number: H01L23/53238 ,  H01L21/02697 ,  H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

Abstract: To achieve the foregoing and in accordance with the purpose of the present invention, a method for filling through silicon vias is provided. A dielectric layer is formed over the through silicon vias. A barrier layer, comprising tungsten, is deposited by CVD or ALD over the dielectric layer. The through silicon vias are filled with a conductive material.

Abstract translation: 为了实现上述目的，并且根据本发明的目的，提供了一种通过硅通孔填充的方法。 在穿过硅通孔上形成电介质层。 包含钨的阻挡层通过CVD或ALD沉积在电介质层上。 通孔硅填充导电材料。

公开(公告)号：US11549175B2

公开(公告)日：2023-01-10

申请号：US17250014

申请日：2019-05-03

Applicant: Lam Research Corporation

Inventor： Gorun Butail ,  Joshua Collins ,  Hanna Bamnolker ,  Seshasayee Varadarajan

IPC: C23C16/04 ,  C23C16/02 ,  C23C16/14 ,  C23C16/455

Abstract: Provided herein are methods and apparatuses for filling features metal-containing materials. One aspect of the disclosure relates to a method for filling structures with a metal-containing material, the method including: providing a structure to be filled with a metal-containing material, exposing the structure to multiple deposition cycles, with each deposition cycle including exposure to one or more alternating reducing agent (e.g. hydrogen (H2)) dose/inert gas purge pulses pulse followed by exposure to one or more alternating metal precursor dose pulses and inert gas purge pulses. The metal may be tungsten (W) or molybdenum (Mo) in some embodiments. In some embodiments, the structure is a partially fabricated (3-D) NAND structure. Apparatuses to perform the methods are also provided.

公开(公告)号：US20210343579A1

公开(公告)日：2021-11-04

申请号：US17304697

申请日：2021-06-24

Applicant: Lam Research Corporation

Inventor： Patrick A. van Cleemput ,  Seshasayee Varadarajan ,  Bart J. van Schravendijk

IPC: H01L21/768 ,  H01L29/417 ,  H01L29/66 ,  H01L21/67 ,  H01L21/311 ,  H01L21/02 ,  H01L29/78

Abstract: Tin oxide films are used to create air gaps during semiconductor substrate processing. Tin oxide films, disposed between exposed layers of other materials, such as SiO2 and SiN can be selectively etched using a plasma formed in an H2-containing process gas. The etching creates a recessed feature in place of the tin oxide between the surrounding materials. A third material, such as SiO2 is deposited over the resulting recessed feature without fully filling the recessed feature, forming an air gap. A method for selectively etching tin oxide in a presence of SiO2, SiC, SiN, SiOC, SiNO, SiCNO, or SiCN, includes, in some embodiments, contacting the substrate with a plasma formed in a process gas comprising at least about 50% H2. Etching of tin oxide can be performed without using an external bias at the substrate and is preferably performed at a temperature of less than about 100° C.

公开(公告)号：US11088019B2

公开(公告)日：2021-08-10

申请号：US15893458

申请日：2018-02-09

Applicant: Lam Research Corporation

Inventor： Patrick A. Van Cleemput ,  Seshasayee Varadarajan ,  Bart J. van Schravendijk

IPC: H01L21/768 ,  H01L29/66 ,  H01L21/67 ,  H01L21/311 ,  H01L21/02 ,  H01L29/78 ,  H01L29/417

Abstract: Tin oxide films are used to create air gaps during semiconductor substrate processing. Tin oxide films, disposed between exposed layers of other materials, such as SiO2 and SiN can be selectively etched using a plasma formed in an H2-containing process gas. The etching creates a recessed feature in place of the tin oxide between the surrounding materials. A third material, such as SiO2 is deposited over the resulting recessed feature without fully filling the recessed feature, forming an air gap. A method for selectively etching tin oxide in a presence of SiO2, SiC, SiN, SiOC, SiNO, SiCNO, or SiCN, includes, in some embodiments, contacting the substrate with a plasma formed in a process gas comprising at least about 50% H2. Etching of tin oxide can be performed without using an external bias at the substrate and is preferably performed at a temperature of less than about 100° C.

公开(公告)号：US20210238736A1

公开(公告)日：2021-08-05

申请号：US17250014

申请日：2019-05-03

Applicant: Lam Research Corporation

Inventor： Gorun Butail ,  Joshua Collins ,  Hanna Bamnolker ,  Seshasayee Varadarajan

IPC: C23C16/04 ,  C23C16/14 ,  C23C16/455 ,  C23C16/02

Abstract: Provided herein are methods and apparatuses for filling features metal-containing materials. One aspect of the disclosure relates to a method for filling structures with a metal-containing material, the method including: providing a structure to be filled with a metal-containing material, exposing the structure to multiple deposition cycles, with each deposition cycle including exposure to one or more alternating reducing agent (e.g. hydrogen (H2)) dose/inert gas purge pulses pulse followed by exposure to one or more alternating metal precursor dose pulses and inert gas purge pulses. The metal may be tungsten (W) or molybdenum (Mo) in some embodiments. In some embodiments, the structure is a partially fabricated (3-D) NAND structure. Apparatuses to perform the methods are also provided.

公开(公告)号：US11075127B2

公开(公告)日：2021-07-27

申请号：US16503270

申请日：2019-07-03

Applicant: Lam Research Corporation

Inventor： Seshasayee Varadarajan ,  Aaron R. Fellis ,  Andrew John McKerrow ,  James Samuel Sims ,  Ramesh Chandrasekharan ,  Jon Henri

IPC: H01L21/66 ,  H01L21/67 ,  H01L21/677 ,  H01L21/02 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/505 ,  C23C16/54 ,  C23C16/50 ,  C23C16/52

Abstract: Disclosed are methods of and apparatuses and systems for depositing a film in a multi-station deposition apparatus. The methods may include: (a) providing a substrate to a first station of the apparatus, (b) adjusting the temperature of the substrate to a first temperature, (c) depositing a first portion of the material on the substrate while the substrate is at the first temperature in the first station, (d) transferring the substrate to the second station, (e) adjusting the temperature of the substrate to a second temperature, and (f) depositing a second portion of the material on the substrate while the substrate is at the second temperature, such that the first portion and the second portion exhibit different values of a property of the material. The apparatuses and systems may include a multi-station deposition apparatus and a controller having control logic for performing one or more of (a)-(f).