MULTIPLE ANGLES OF INCIDENCE SEMICONDUCTOR METROLOGY SYSTEMS AND METHODS
    21.
    发明申请
    MULTIPLE ANGLES OF INCIDENCE SEMICONDUCTOR METROLOGY SYSTEMS AND METHODS 有权
    多个角度的半导体计量系统和方法

    公开(公告)号:US20140375981A1

    公开(公告)日:2014-12-25

    申请号:US14043783

    申请日:2013-10-01

    Abstract: An apparatus includes (i) a bright light source for providing an illumination beam at multiple wavelengths selectable with a range from a deep ultraviolet wavelength to an infrared wavelength, (ii) illumination optics for directing the illumination beam towards a sample at selectable sets of angles of incidence (AOI's) or azimuth angles (AZ's) and polarization states to provide spectroscopic ellipsometry, wherein the illumination optics include an apodizer for controlling a spot size of the illumination beam on the sample at each of the selectable AOI/AZ sets, (iii) collection optics for directing an output beam from the sample in response to the illumination beam at each of the selectable AOI/AZ sets and polarization states towards a detector that generates an output signal or image based on the output beam, and (v) a controller for characterizing a feature of the sample based on the output signal or image.

    Abstract translation: 一种装置包括(i)用于提供在从深紫外波长到红外波长的范围内可选择的多个波长的照明光束的明亮光源,(ii)照明光学器件,用于将照明光束以可选择的角度集合 (AOI)或方位角(AZ)和极化状态以提供光谱椭偏仪,其中照明光学器件包括用于控制每个可选AOI / AZ组上样品上的照明光束的光斑尺寸的变迹器,(iii )收集光学器件,用于响应于在每个可选择的AOI / AZ集合处的照明光束和朝向基于输出光束产生输出信号或图像的检测器的偏振状态来引导来自样品的输出光束,以及(v) 控制器,用于基于输出信号或图像来表征样本的特征。

    Scatterometry Modeling in the Presence of Undesired Diffraction Orders

    公开(公告)号:US20200232909A1

    公开(公告)日:2020-07-23

    申请号:US16286315

    申请日:2019-02-26

    Abstract: A metrology system may receive a model for measuring one or more selected attributes of a target including features distributed in a selected pattern based on regression of spectroscopic scatterometry data from a scatterometry tool for a range of wavelengths. The metrology system may further generate a weighting function for the model to de-emphasize portions of the spectroscopic scatterometry data associated with wavelengths at which light captured by the scatterometry tool when measuring the target is predicted to include undesired diffraction orders. The metrology system may further direct the spectroscopic scatterometry tool to generate scatterometry data of one or more measurement targets including fabricated features distributed in the selected pattern. The metrology system may further measure the selected attributes for the one or more measurement targets based on regression of the scatterometry data of the one or more measurement targets to the model weighted by the weighting function.

    Sample Transport Device With Integrated Metrology

    公开(公告)号:US20190295874A1

    公开(公告)日:2019-09-26

    申请号:US16280145

    申请日:2019-02-20

    Abstract: A metrology system may include one or more casings that fit within an interior cavity of a sample transport device, an illumination source within one of the one or more casings, one or more illumination optics within one of the one or more casings for directing illumination from the illumination source to a sample located in the interior cavity of the sample transport device, one or more collection optics within one of the one or more casings for light from the sample in response to the illumination from the illumination source, and one or more detectors within one of the one or more casings for generating metrology data based on at least a portion of the light collected by the one or more collection optics.

    Porosity measurement of semiconductor structures

    公开(公告)号:US10041873B2

    公开(公告)日:2018-08-07

    申请号:US15582331

    申请日:2017-04-28

    Inventor: Shankar Krishnan

    Abstract: Methods and systems for performing optical measurements of the porosity of geometric structures filled with a fill material by a capillary condensation process are presented herein. Measurements are performed while the structure under measurement is treated with a flow of purge gas that includes a controlled amount of vaporized fill material. A portion of the fill material condenses and fills openings in the structural features such as pores of a planar film, spaces between structural features, small volumes such as notches, trenches, slits, contact holes, etc. In one aspect, the desired degree of saturation of vaporized material in the gaseous flow is determined based on the maximum feature size to be filled. In another aspect, measurement data is collected when a structure is unfilled and when the structure is filled. The collected data is combined in a multi-target model based measurement to estimate values of porosity and critical dimensions.

    Spectral Reflectometry For In-Situ Process Monitoring And Control

    公开(公告)号:US20180061691A1

    公开(公告)日:2018-03-01

    申请号:US15688751

    申请日:2017-08-28

    CPC classification number: H01L21/67253 H01L22/10 H01L22/12

    Abstract: Methods and systems for performing in-situ, selective spectral reflectometry (SSR) measurements of semiconductor structures disposed on a wafer are presented herein. Illumination light reflected from a wafer surface is spatially imaged. Signals from selected regions of the image are collected and spectrally analyzed, while other portions of the image are discarded. In some embodiments, a SSR includes a dynamic mirror array (DMA) disposed in the optical path at or near a field plane conjugate to the surface of the semiconductor wafer under measurement. The DMA selectively blocks the undesired portion of wafer image. In other embodiments, a SSR includes a hyperspectral imaging system including a plurality of spectrometers each configured to collect light from a spatially distinct area of a field image conjugate to the wafer surface. Selected spectral signals associated with desired regions of the wafer image are selected for analysis.

    Porosity Measurement Of Semiconductor Structures

    公开(公告)号:US20170315044A1

    公开(公告)日:2017-11-02

    申请号:US15582331

    申请日:2017-04-28

    Inventor: Shankar Krishnan

    Abstract: Methods and systems for performing optical measurements of the porosity of geometric structures filled with a fill material by a capillary condensation process are presented herein. Measurements are performed while the structure under measurement is treated with a flow of purge gas that includes a controlled amount of vaporized fill material. A portion of the fill material condenses and fills openings in the structural features such as pores of a planar film, spaces between structural features, small volumes such as notches, trenches, slits, contact holes, etc. In one aspect, the desired degree of saturation of vaporized material in the gaseous flow is determined based on the maximum feature size to be filled. In another aspect, measurement data is collected when a structure is unfilled and when the structure is filled. The collected data is combined in a multi-target model based measurement to estimate values of porosity and critical dimensions.

    Measurement Of Semiconductor Structures With Capillary Condensation

    公开(公告)号:US20170314912A1

    公开(公告)日:2017-11-02

    申请号:US15497033

    申请日:2017-04-25

    Inventor: Shankar Krishnan

    Abstract: Methods and systems for performing optical measurements of geometric structures filled by a capillary condensation process are presented herein. Measurements are performed while the structures under measurement are treated with a flow of purge gas that includes a controlled amount of fill material. A portion of the fill material condenses onto the structures under measurement and fills openings in the structural features, spaces between structural features, small volumes such as notches, trenches, slits, contact holes, etc. The degree of saturation of vaporized material in the gaseous flow is adjusted based on the maximum feature size to be filled. In some examples, measurement data, such as spectroscopic data or image data, are collected when a structure is unfilled and when the structure is filled by capillary condensation. The collected data are combined to improve measurement performance.

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