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    Broadband And Wide Field Angle Compensator
    21.
    发明申请
    Broadband And Wide Field Angle Compensator 有权
    宽带和宽视角补偿器

    公开(公告)号：US20170052112A1

    公开(公告)日：2017-02-23

    申请号：US15344704

    申请日：2016-11-07

    Applicant: KLA-Tencor Corporation

    Inventor： Lawrence Rotter ,  Klaus Flock ,  Muzammil Arain ,  David Y. Wang

    IPC: G01N21/23 ,  G01N21/21 ,  G01N21/95 ,  G02B5/30

    CPC classification number: G01N21/23 ,  G01N21/211 ,  G01N21/9501 ,  G01N2021/213 ,  G01N2201/068 ,  G02B5/3083 ,  G02B5/3091 ,  G02F1/13363

    Abstract: A rotatable compensator configured to transmit non-collimated light over a broad range of wavelengths, including ultraviolet, with a high degree of retardation uniformity across the aperture is presented. In one embodiment, a rotatable compensator includes a stack of four individual plates in optical contact. The two thin plates in the middle of the stack are made from a birefringent material and are arranged to form a compound, zeroth order bi-plate. The remaining two plates are relatively thick and are made from an optically isotropic material. These plates are disposed on either end of the compound, zeroth order bi-plate. The low order plates minimize the sensitivity of retardation across the aperture to non-collimated light. Materials are selected to ensure transmission of ultraviolet light. The optically isotropic end plates minimize coherence effects induced at the optical interfaces of the thin plates.

    Abstract translation: 提供了一种可旋转补偿器，其被配置为在宽范围的波长（包括紫外线）上传输非准直光，并且在整个孔径上具有高程度的延迟均匀性。 在一个实施例中，可旋转补偿器包括光学接触的四个单独板的堆叠。 堆叠中间的两个薄板由双折射材料制成并且被布置成形成复合物，零级双板。 剩余的两个板相对较厚并且由光学各向同性材料制成。 这些板设置在化合物的任一端，为零级双板。 低阶平板将通过光圈的延迟的灵敏度最小化为非准直光。 选择材料以确保紫外线的透射。 光学各向同性的端板最小化在薄板的光学界面处引起的相干效应。

    Methods And Systems For Co-Located Metrology
    22.
    发明申请
    Methods And Systems For Co-Located Metrology 审中-公开

    公开(公告)号：US20200243400A1

    公开(公告)日：2020-07-30

    申请号：US16257066

    申请日：2019-01-24

    Applicant: KLA-Tencor Corporation

    Inventor： David Y. Wang ,  Esen Salcin ,  Michael Friedmann ,  Derrick Shaughnessy ,  Andrei V. Shchegrov ,  Jonathan M. Madsen ,  Alexander Kuznetsov

    IPC: H01L21/66 ,  G03F7/20 ,  G01N21/95 ,  G01N21/21 ,  G01B11/02 ,  G06N3/02

    Abstract: Methods and systems for performing co-located measurements of semiconductor structures with two or more measurement subsystems are presented herein. To achieve a sufficiently small measurement box size, the metrology system monitors and corrects the alignment of the measurement spot of each metrology subsystem with a metrology target to achieve maximum co-location of the measurement spots of each metrology subsystem with the metrology target. In another aspect, measurements are performed simultaneously by two or more metrology subsystems at high throughput at the same wafer location. Furthermore, the metrology system effectively decouples simultaneously acquired measurement signals associated with each measurement subsystem. This maximizes signal information associated with simultaneous measurements of the same metrology by two or more metrology subsystems.

    Methods And Systems For Measurement Of Thick Films And High Aspect Ratio Structures
    24.
    发明申请
    Methods And Systems For Measurement Of Thick Films And High Aspect Ratio Structures 审中-公开

    公开(公告)号：US20180238814A1

    公开(公告)日：2018-08-23

    申请号：US15896978

    申请日：2018-02-14

    Applicant: KLA-Tencor Corporation

    Inventor： Noam Sapiens ,  Shankar Krishnan ,  David Y. Wang ,  Alexander Buettner ,  Kerstin Purrucker ,  Kevin A. Peterlinz

    IPC: G01N21/95 ,  G01B11/06 ,  G01J3/42 ,  G01N21/21 ,  G01N21/956 ,  H01L21/66

    Abstract: Methods and systems for performing spectroscopic measurements of semiconductor structures including ultraviolet, visible, and infrared wavelengths greater than two micrometers are presented herein. A spectroscopic measurement system includes a combined illumination source including a first illumination source that generates ultraviolet, visible, and near infrared wavelengths (wavelengths less than two micrometers) and a second illumination source that generates mid infrared and long infrared wavelengths (wavelengths of two micrometers and greater). Furthermore, the spectroscopic measurement system includes one or more measurement channels spanning the range of illumination wavelengths employed to perform measurements of semiconductor structures. In some embodiments, the one or more measurement channels simultaneously measure the sample throughout the wavelength range. In some other embodiments, the one or more measurement channels sequentially measure the sample throughout the wavelength range.

    Simultaneous Multi-Angle Spectroscopy
    27.
    发明申请
    Simultaneous Multi-Angle Spectroscopy 有权

    公开(公告)号：US20170356800A1

    公开(公告)日：2017-12-14

    申请号：US15344825

    申请日：2016-11-07

    Applicant: KLA-Tencor Corporation

    Inventor： Shankar Krishnan ,  Alexander Buettner ,  Kerstin Purrucker ,  David Y. Wang

    IPC: G01J3/18 ,  G01J3/28 ,  G01N21/25 ,  G01N33/00 ,  G01N21/27 ,  G01J3/10 ,  G01J3/02

    CPC classification number: G01J3/189 ,  G01J3/0289 ,  G01J3/10 ,  G01J3/2803 ,  G01N21/255 ,  G01N21/27 ,  G01N33/00 ,  G01N2033/0095

    Abstract: Methods and systems for performing simultaneous spectroscopic measurements of semiconductor structures over a broad range of angles of incidence (AOI), azimuth angles, or both, are presented herein. Spectra including two or more sub-ranges of angles of incidence, azimuth angles, or both, are simultaneously measured over different sensor areas at high throughput. Collected light is linearly dispersed across different photosensitive areas of one or more detectors according to wavelength for each subrange of AOIs, azimuth angles, or both. Each different photosensitive area is arranged on the one or more detectors to perform a separate spectroscopic measurement for each different range of AOIs, azimuth angles, or both. In this manner, a broad range of AOIs, azimuth angles, or both, are detected with high signal to noise ratio, simultaneously. This approach enables high throughput measurements of high aspect ratio structures with high throughput, precision, and accuracy.

    Multiple angles of incidence semiconductor metrology systems and methods
    29.
    发明授权
    Multiple angles of incidence semiconductor metrology systems and methods 有权
    多重入射角度半导体测量系统和方法

    公开(公告)号：US09116103B2

    公开(公告)日：2015-08-25

    申请号：US14043783

    申请日：2013-10-01

    Applicant: KLA-Tencor Corporation

    Inventor： David Y. Wang ,  Klaus Flock ,  Lawrence Rotter ,  Shankar Krishnan ,  Johannes D. de Veer ,  Catalin Filip ,  Gregory Brady ,  Muzammil Arain ,  Andrei Shchegrov

    IPC: G01J4/00 ,  G01N21/21 ,  G01N21/95 ,  G01N21/956

    CPC classification number: G01N21/211 ,  G01B2210/56 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/214 ,  G01N2021/8848 ,  G01N2201/06113 ,  G01N2201/0636

    Abstract: An apparatus includes (i) a bright light source for providing an illumination beam at multiple wavelengths selectable with a range from a deep ultraviolet wavelength to an infrared wavelength, (ii) illumination optics for directing the illumination beam towards a sample at selectable sets of angles of incidence (AOI's) or azimuth angles (AZ's) and polarization states to provide spectroscopic ellipsometry, wherein the illumination optics include an apodizer for controlling a spot size of the illumination beam on the sample at each of the selectable AOI/AZ sets, (iii) collection optics for directing an output beam from the sample in response to the illumination beam at each of the selectable AOI/AZ sets and polarization states towards a detector that generates an output signal or image based on the output beam, and (v) a controller for characterizing a feature of the sample based on the output signal or image.

    Abstract translation: 一种装置包括（i）用于提供在从深紫外波长到红外波长的范围内可选择的多个波长的照明光束的明亮光源，（ii）照明光学器件，用于将照明光束以可选择的角度集合 （AOI）或方位角（AZ）和极化状态以提供光谱椭偏仪，其中照明光学器件包括用于控制每个可选AOI / AZ组上样品上的照明光束的光斑尺寸的变迹器，（iii ）收集光学器件，用于响应于在每个可选择的AOI / AZ集合处的照明光束和朝向基于输出光束产生输出信号或图像的检测器的偏振状态来引导来自样品的输出光束，以及（v） 控制器，用于基于输出信号或图像来表征样本的特征。

    Metrology systems and methods for high aspect ratio and large lateral dimension structures
    30.
    发明授权
    Metrology systems and methods for high aspect ratio and large lateral dimension structures 有权
    高纵横比和大横向尺寸结构的计量系统和方法

    公开(公告)号：US08860937B1

    公开(公告)日：2014-10-14

    申请号：US13743304

    申请日：2013-01-16

    Applicant: KLA-Tencor Corporation

    Inventor： Thaddeus Gerard Dziura ,  Xuefeng Liu ,  David Y. Wang ,  Jonathan Madsen ,  Alexander Kuznetsov ,  Johannes D. de Veer ,  Shankar Krishnan ,  Derrick Shaughnessy ,  Andrei Shchegrov

    IPC: G01N21/00 ,  G01N21/47

    CPC classification number: G01N21/47 ,  G01B2210/56 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Various metrology systems and methods for high aspect ratio and large lateral dimension structures are provided. One method includes directing light to one or more structures formed on a wafer. The light includes ultraviolet light, visible light, and infrared light. The one or more structures include at least one high aspect ratio structure or at least one large lateral dimension structure. The method also includes generating output responsive to light from the one or more structures due to the light directed to the one or more structures. In addition, the method includes determining one or more characteristics of the one or more structures using the output.

    Abstract translation: 提供了用于高纵横比和大横向尺寸结构的各种计量系统和方法。 一种方法包括将光引导到在晶片上形成的一个或多个结构。 该光包括紫外光，可见光和红外光。 一个或多个结构包括至少一个高纵横比结构或至少一个大的横向尺寸结构。 该方法还包括响应于来自一个或多个结构的光而产生输出，这是由于指向一个或多个结构的光。 另外，该方法包括使用该输出确定一个或多个结构的一个或多个特性。

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