公开(公告)号：US09799487B2

公开(公告)日：2017-10-24

申请号：US15073935

申请日：2016-03-18

Applicant: IMS Nanofabrication AG

Inventor： Elmar Platzgummer

IPC: H01J37/20 ,  G21K5/04 ,  H01J37/302 ,  H01J37/317

CPC classification number: H01J37/3026 ,  G03F7/70358 ,  G03F7/70425 ,  H01J37/20 ,  H01J37/3177 ,  H01J2237/202 ,  H01J2237/20221 ,  H01J2237/31766

Abstract: To irradiate a target with a beam of energetic electrically charged particles, the beam is formed and imaged onto a target, where it generates a pattern image composed of pixels. The pattern image is moved along a path on the target over a region to be exposed, and this movement defines a number of stripes covering said region in sequential exposures and having respective widths. The number of stripes is written in at least two sweeps which each have a respective general direction, but the general direction is different for different sweeps, e.g. perpendicular to each other. Each stripe belongs to exactly one sweep and runs substantially parallel to the other stripes of the same sweep, namely, along the respective general direction. For each sweep the widths, as measured across said main direction, of the stripes of one sweep combine into a cover of the total width of the region.

公开(公告)号：US09568907B2

公开(公告)日：2017-02-14

申请号：US14845197

申请日：2015-09-03

Applicant: IMS Nanofabrication AG

Inventor： Elmar Platzgummer ,  Christoph Spengler ,  Markus Wagner ,  Samuel Kvasnica

IPC: G21K5/04 ,  G05B19/402 ,  H01J37/304 ,  H01J37/317

CPC classification number: G05B19/402 ,  H01J37/3045 ,  H01J37/3177 ,  H01J2237/31764

Abstract: Method for computing an exposure pattern for exposing a desired pattern on a target in a charged-particle lithography apparatus, in which a particle beam is directed to and illuminates a pattern definition device comprising an aperture array composed of a plurality of blanking apertures through which said particle beam penetrates for writing said desired pattern by exposing a multitude of pixels within an exposure area on the target, said method taking into account a spatially dependent distortion of the target within the exposure area, with respect to dislocations transversal to the direction of the particle beam.

Abstract translation: 一种用于计算曝光图案的方法，用于在带电粒子光刻设备中的目标上曝光所需图案，其中，粒子束被引导并照射包括由多个消隐孔组成的孔径阵列的图案定义装置， 通过在目标的曝光区域内暴露许多像素，粒子束穿透以写入所需的图案，所述方法考虑到在曝光区域内的目标的空间依赖的变形，相对于沿粒子方向横向的位错 光束。

公开(公告)号：US09520268B2

公开(公告)日：2016-12-13

申请号：US14795535

申请日：2015-07-09

Applicant: IMS Nanofabrication AG

Inventor： Elmar Platzgummer

IPC: G21K5/04 ,  H01J37/317 ,  H01J37/302 ,  G06F17/50 ,  H01J37/09 ,  H01J37/04

CPC classification number: H01J37/3177 ,  G06F17/5072 ,  G06F17/5081 ,  H01J37/045 ,  H01J37/09 ,  H01J37/3026 ,  H01J37/3175 ,  H01J2237/043 ,  H01J2237/3175 ,  H01J2237/31764

Abstract: An exposure pattern is computed for exposing a desired pattern on a target in a charged-particle multi-beam processing apparatus to match a reference writing tool, and/or for compensating a deviation of the imaging from a pattern definition device onto the target from a desired value of critical dimension along at least one direction in the image area on the target: The desired pattern is provided as a graphical representation suitable for the reference tool, on the image area on the target. A convolution kernel is used which describes a mapping from an element of the graphical representation to a group of pixels which is centered around a nominal position of said element. A nominal exposure pattern is calculated by convolution of the graphical representation with the convolution kernel, said nominal exposure pattern being suitable to create a nominal dose distribution on the target when exposed with the processing apparatus.

Abstract translation: 计算曝光图案以在带电粒子多光束处理装置中的目标上曝光期望图案以匹配参考写入工具，和/或用于从图案定义装置将图像偏离从图案定义装置补偿到目标上 在目标图像区域中至少沿一个方向的临界尺寸的期望值：所需图案作为适合参考工具的图形表示，在目标上的图像区域上提供。 使用卷积核，其描述从图形表示的元素到以所述元素的标称位置为中心的一组像素的映射。 通过图形表示与卷积核的卷积来计算标称曝光图案，所述标称曝光图案适于在用处理装置曝光时在目标上产生标称剂量分布。

公开(公告)号：US20160276132A1

公开(公告)日：2016-09-22

申请号：US15073200

申请日：2016-03-17

Applicant: IMS Nanofabrication AG

Inventor： Elmar Platzgummer ,  Klaus Schiessl

IPC: H01J37/317 ,  H01J37/10

CPC classification number: H01J37/3177 ,  H01J37/3026 ,  H01J2237/31764 ,  H01J2237/31769

Abstract: To irradiate a target with a beam of energetic electrically charged particles, the beam is formed and imaged onto a target, where it generates a pattern image composed of pixels. For a pattern which comprises a primary pattern region to be written with a predetermined primary feature size and a secondary pattern region which is composed of structure features capable of being written with a secondary feature size, larger than the primary feature size. The structure features of the primary pattern region are written by exposing a plurality of exposure spots on grid positions of a first exposure grid; the structure features in the secondary pattern region are written by exposing a plurality of exposure spots on grid positions of a second exposure grid according to a second arrangement which is coarser that the regular arrangement of the first exposure grid.

Abstract translation: 为了用能量带电的粒子束照射目标，该束被形成并成像到目标上，其中它产生由像素组成的图案图像。 对于包括要被预定的主要特征尺寸写入的主要图案区域的图案和由能够被写入具有大于主要特征尺寸的次要特征尺寸的结构特征构成的二次图案区域。 通过在第一曝光网格的网格位置上暴露多个曝光点来写入主图案区域的结构特征; 根据第二布置，通过在第二曝光栅格的栅格位置上暴露多个曝光点来写入次级图案区域中的结构特征，该第二布置较粗，以使得第一曝光栅格的规则布置更粗糙。

公开(公告)号：US09443699B2

公开(公告)日：2016-09-13

申请号：US14694959

申请日：2015-04-23

Applicant: IMS Nanofabrication AG

Inventor： Elmar Platzgummer ,  Hans Löschner

IPC: H01J37/317 ,  H01J37/09 ,  H01J37/04 ,  H01J37/147

CPC classification number: H01J37/3177 ,  H01J37/045 ,  H01J37/09 ,  H01J37/147 ,  H01J37/3174 ,  H01J2237/0435

Abstract: In a charged-particle multi-beam processing apparatus for exposure of a target with a plurality of parallel particle-optical columns, each column has a beam shaping device forming the shape of the illuminating beam into a desired pattern composed of a multitude of sub-beams, by means of an aperture array device, which defines the shape of a respective sub-beam by means of an array of apertures, and a deflection array device selectively deflecting sub-beams off their nominal paths; thus, only the non-selected sub-beams can reach the target. According to many embodiments of the invention each beam shaping device is provided with a first field-boundary device and a second field-boundary device, which are the first and last plate elements traversed by the beam. One of the first and second field-boundary devices defines a field-free space interval so as to accommodate feeding lines for controlling the deflection array device.

Abstract translation: 在用多个平行粒子光学柱曝光靶的带电粒子多光束处理装置中，每列具有将照明光束的形状形成为由多个子像素组成的期望图案的光束整形装置， 通过孔阵列器件，其通过孔阵列限定相应子光束的形状，并且偏转阵列器件选择性地使子光束偏离其标称通路; 因此，只有未选择的子光束才能到达目标。 根据本发明的许多实施例，每个光束整形装置设置有第一场边界装置和第​​二场边界装置，第一场边界装置和第​​二场边界装置是由横梁穿过的第一和最后的板件。 第一和第二场边界装置之一限定了无场空间间隔，以适应用于控制偏转阵列装置的馈线。

公开(公告)号：US20150311030A1

公开(公告)日：2015-10-29

申请号：US14694959

申请日：2015-04-23

Applicant: IMS Nanofabrication AG

Inventor： Elmar Platzgummer ,  Hans Löschner

IPC: H01J37/147 ,  H01J37/317 ,  H01J37/252 ,  H01J37/31

CPC classification number: H01J37/3177 ,  H01J37/045 ,  H01J37/09 ,  H01J37/147 ,  H01J37/3174 ,  H01J2237/0435

Abstract: In a charged-particle multi-beam processing apparatus for exposure of a target with a plurality of parallel particle-optical columns, each column has a beam shaping device forming the shape of the illuminating beam into a desired pattern composed of a multitude of sub-beams, by means of an aperture array device, which defines the shape of a respective sub-beam by means of an array of apertures, and a deflection array device selectively deflecting sub-beams off their nominal paths; thus, only the non-selected sub-beams can reach the target. According to many embodiments of the invention each beam shaping device is provided with a first field-boundary device and a second field-boundary device, which are the first and last plate elements traversed by the beam. One of the first and second field-boundary devices defines a field-free space interval so as to accommodate feeding lines for controlling the deflection array device.

Abstract translation: 在用多个平行粒子光学柱曝光靶的带电粒子多光束处理装置中，每列具有将照明光束的形状形成为由多个子像素组成的期望图案的光束整形装置， 通过孔阵列器件，其通过孔阵列限定相应子光束的形状，并且偏转阵列器件选择性地使子光束偏离其标称通路; 因此，只有未选择的子光束才能到达目标。 根据本发明的许多实施例，每个光束整形装置设置有第一场边界装置和第​​二场边界装置，第一场边界装置和第​​二场边界装置是由横梁穿过的第一和最后的板件。 第一和第二场边界装置之一限定了无场空间间隔，以适应用于控制偏转阵列装置的馈线。

公开(公告)号：US20150248993A1

公开(公告)日：2015-09-03

申请号：US14631690

申请日：2015-02-25

Applicant: IMS Nanofabrication AG

Inventor： Rafael Reiter ,  Elmar Platzgummer ,  Klaus Schiessel

IPC: H01J37/317 ,  H01J37/04

CPC classification number: H01J37/3177 ,  H01J37/045 ,  H01J37/3026 ,  H01J2237/0435 ,  H01J2237/3175 ,  H01J2237/31798

Abstract: An exposure pattern is computed which is used for exposing a desired pattern on a target by means of a blanking aperture array in a particle-optical lithography apparatus which has a finite number of defects, said desired pattern being composed of a multitude of image elements within an image area on the target: A list of defective blanking apertures is provided, comprising information about the type of defect of the defective blanking apertures; from the desired pattern a nominal exposure pattern is calculated as a raster graphics over the image elements disregarding the defective blanking apertures; the “compromised” image elements (1105) are determined which are exposed by aperture images of defective blanking apertures; for each compromised element (1105), a set of neighboring image elements is selected as “correction elements” (1104); for each compromised element, corrected dose values are calculated for the correction elements, said corrected dose values minimizing an error functional of the deviation of the dose distribution including the defects from the nominal dose distribution, under the constraint that each of the corrected dose values falls within the allowed doses; and a corrected exposure pattern (1103) is generated by substituting the corrected dose values for the nominal dose values at the correction elements.

Abstract translation: 计算曝光图案，其用于通过具有有限数量的缺陷的粒子光学光刻设备中的消隐孔径阵列在目标上曝光期望的图案，所述期望图案由多个图像元素组成， 目标上的图像区域：提供了有缺陷的冲裁孔的列表，其包括关于有缺陷的冲裁孔的缺陷类型的信息; 从期望的图案，将标称曝光图案计算为不考虑有缺陷的消隐孔径的图像元素上的光栅图形; 确定通过有缺陷的冲裁孔的孔径图像曝光的“受损的”图像元件（1105） 对于每个受损元件（1105），一组相邻图像元素被选择为“校正元件”（1104）; 对于每个受损元件，针对校正元件计算校正剂量值，所述校正剂量值在每个校正剂量值下降的约束下使包括来自标称剂量分布的缺陷的剂量分布的偏差的误差功能最小化 在允许的剂量内; 并且通过将校正的剂量值替换为校正元件处的标称剂量值来生成校正的曝光图案（1103）。